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检索条件"机构=Science and Technology on Reliability Physics and Application of Electronic"

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Total dose irradiation effects in the μA741 operational amplifier with different biases

Total dose irradiation effects in the μA741 operational amp...

引用

International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering (ICQR2MSE)

作者： Jian-Bo Liu Yuan Liu Jin-Li Cheng Yun-Fei En Ting Zhang Yu-Juan He Fu-Yao Dong School of Material and Energy Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangdong University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Material and Energy Guangdong University of Technology Guangzhou China

ISBN: (纸本)9781479910151

Total dose dependence of bias current and offset voltage in the linear operational amplifier μA741 with different bias is presented in this paper. The experimental results show that the bias current in the μA741 with grounded bias is significantly affected by the degradation of the differential input transistors. In addition, the offset voltage is affected by the degradation of bipolar transistors of the current source in the differential input stage.

关键词： Radiation effects Operational amplifiers Degradation Transistors Bipolar transistors Junctions Educational institutions

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Failure localization methods for System-on-Chip (SoC) using Photon Emission Microscopy

Failure localization methods for System-on-Chip (SoC) using ...

引用

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

作者： Y. Chen H. Chen X. W. Zhang P. Lai Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Fifth Electronics Research Institute of Ministry of Industry and Information Technology

ISBN: (纸本)9781479904792

System-on-Chip (SoC) is a major revolution in IC design where the whole functionality of a system is placed on a single chip. Its advantages include high performance, shorter design cycle time and space efficiency. But due to the circuit complexity, the high pin counts and ever increasing operating frequencies, System-on-Chip (SoC) devices drive the most challenging requirements for failure localization and mechanism analysis. PEM (Photon Emission Microscopy) analysis is important for failure analysis as they can help to locate the failed device directly or point out the analysis direction. This paper presents the failure localization method for System-on-Chip (SoC) using Photon Emission Microscope (PEM) and gives several successful failure analysis cases using PEM locating the failure site and FIB (Focused Ion Beam) and SEM (Scanning electronic Microscope) analyzing the failure mechanism.

关键词： system-on-chip Photon emission mucin 1 Pulse code modulation integrated circuit design FAILURE ANALYSIS circuit complexity Failure mechanisms fibrillarin Microscopy

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Thermal effects in 3–5μm solid state lasers

Thermal effects in 3–5μm solid state lasers

引用

International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering (ICQR2MSE)

作者： Guoguang Lu Mingming Hao Yun Huang Yunfei En Science and Technology on Reliability Physics and Application Technology of Electrical Component Laboratory CEPREI Guangzhou China

ISBN: (纸本)9781479910151

An investigation of thermal effects in a high power 3-5μm solid state laser pumped with different pump beam transverse profiles is carried out by COMSOL software based on the finite element method, and the temperature of the crystal center where the Super-Gaussian distributed light projected area is 81.8°C, and is bigger than that of Gaussian pump light mode and top plane pump light mode.

关键词： Crystals Laser excitation Pump lasers Temperature distribution Laser beams Semiconductor lasers

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Characteristic analysis of total dose irradiation annealing effect in SOI NMOSFET

Characteristic analysis of total dose irradiation annealing ...

引用

International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Yujuan He Hongwei Luo Yunfei En Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Guangzhou 510610 China

The effect of total-dose irradiation annealing on SIMOX SOI MOSFET with different bias and temperature was studied. It has been demonstrated that the annealing effect was more remarkable with ON bias than the others a... 详细信息

关键词： Annealing MOS devices MOSFET circuits reliability

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A Novel Packaging Structure for High Power LED Based on Chip on Heat-Sink Method

A Novel Packaging Structure for High Power LED Based on Chip...

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International Conference on Information technology and applications (ITA)

作者： Kailin Pan Peng Huang Yu Guo Tao Lu Bin Zhou School of Mechanical and Electrical Engineering Guilin University of Electronic Technology Guilin China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China

Recently, LED lighting receives extensive attention and is put in practice in many respects with the great advantages of low power consumption, high luminous efficiency and long service life. However, it is confronted with lots of problems such as light failure and short service life caused by high temperature of LED chip. So the thermal management is one of the most important aspects of successful LED systems design. In this paper, firstly, a novel packaging structure with excellent capacity of heat dissipation for high power LED which is based on Chip on Heat-sink (COH) method was proposed and investigated. Secondly, some holes were dug in the Printed Circuit Board (PCB) according to the design of heat-sink structure to realize electrical connection between chips and PCB. Then, the heat distribution for three kinds of package structure was simulated by using the software ANSYS, respectively. The simulation result shows that heat dissipation potential of the packaging structure based on COH method is best of all. After that, the main dimension parameters of LED package structure were optimized with the application of Design of Experiment (DOE) and statistical analysis. Finally, samples of the packaging structure based on COH were made successfully. The parameters of thermal properties of the samples were tested by The Thermal Transient Tester (T3ster) in order to verify the accuracy of t simulation results.

关键词： Light emitting diodes Packaging Thermal resistance electronic packaging thermal management Resistance heating Temperature distribution

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Up-screening and qualification of plastic encapsulated microcircuits in high reliability applications

Up-screening and qualification of plastic encapsulated micro...

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International Conference on (ICEPT) electronic Packaging technology

作者： Shaohua Yang Tao Ning Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component China CEPREI Laboratory Guangzhou China College of Information Science and Technology Jinan University Guangzhou China

ISBN: (纸本)9781479904990

Plastic encapsulated microcircuits (PEMs) are increasingly used in many rugged applications, but for their inherent reliability issues such as narrow temperature range, moisture sensitive, delamination and without screening. In this paper, the corresponding countermeasures are discussed, and five types of PEMs assessment practices including a series of measures of destructive physical analysis (DPA), up-screening, extended temperature cycling and stability, highly accelerated stress test (HAST) and high temperature operational lifetest (HOTL) test are illustrated, which will be helpful to reduce the risk of upgrade application.

关键词： Moisture Temperature distribution Thermal stability Temperature measurement Testing Qualifications

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Advanced failure analysis techniques for SiP defect location and mechanism analysis

Advanced failure analysis techniques for SiP defect location...

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International Conference on (ICEPT) electronic Packaging technology

作者： Na Lin Yuan Chen Guoyuan Li Science and Technology on Reliability Physics and Application of Electronic Component Laboratory 5th Electronic Institute of MII Guangzhou China School of Electronic and Information Engineering SCUT Guangzhou China

ISBN: (纸本)9781479904990

System in Package (SiP) has become a popular technology along with the tendency of functionality and portability for electronic devices. Due to the complex design, dimension, and materials in SiP system, some of traditional failure analysis methods are not applicable any more, or have to be improved to meet the specific requirements of SiP structures. In this paper, some advanced techniques for failure analysis in SiP are introduced, including 3D X-ray microscopy, Lock-In Thermography (LIT), Photon Emission Microscopy (PEM) and Focus Ion Beam (FIB). 3D X-ray microscopy is a powerful method to display the virtual cross-section of failure structures, LIT and PEM are used to locate electrical defects. FIB cross sectioning preparation plays an important role in mechanism analysis. Experimental results show that these advanced techniques effectively suit for SiP defect location and mechanism analysis.

关键词： Three-dimensional displays Failure analysis X-ray imaging Materials Microscopy electronics packaging electronic components

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Three-dimensional X-ray laminography and application in failure analysis for System in Package (SiP)

Three-dimensional X-ray laminography and application in fail...

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International Conference on (ICEPT) electronic Packaging technology

作者： Yuan Chen Na Lin Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The 5th Electronic Institute of MII Guangzhou China School of Electronic and Information Engineering South China University of Technology Guangzhou China

ISBN: (纸本)9781479904990

System in Package (SiP) technology is rapidly evolved from specialty technology used in a narrow set of applications to a high volume technology with wide ranging impact on electronics markets. Numerous concepts for three dimensional (3D) SiP packaging are now emerging driven largely by the demands of portable consumer products. Conventional failure analysis techniques face a great challenge for SiP devices. 3D X-Ray technique can capture three-dimensional information about the internal structure of an object. It is very useful for 3D SiP failure analysis. This paper introduced the technology and methodology of 3D X-Ray Inspection with Computed Tomography. And 3D X-Ray analysis methods aiming at the structure and process characteristics of SiP were discussed. A case using 3D X-Ray technique analyzing a SiP sample was presented.

关键词： X-ray imaging Three-dimensional displays Computed tomography Inspection Image reconstruction Failure analysis Soldering

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Failure analysis of IGBT in intelligent power module

Failure analysis of IGBT in intelligent power module

引用

International Conference on Applied Superconductivity and Electromagnetic Devices, ASEMD

作者： Tao Ning Shao Hua Yang Ze Yang Peng College of Information Science and Technology Jinan University Jinan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China China CEPREI Laboratory Guangzhou China

A failure analysis case study of insulated gate bipolar transistor (IGBT) in a intelligent power module (IPM) was introduced. In this paper, the failure mode and mechanism of an IGBT were identified by a series of failure analysis procedures. The high temperature reverse bias stress tests and ion chromatography analysis have been performed to analyze and verify its root failure causes. It indicated that the failure of IGBT chips was caused by the defects on passivation layer and the movable ions were from plastic packaging material and PCBA interface. Those resulted in the inner equipotential rings sustain overvoltage stress, and ultimately leaded to the breakdown of IGBT.

关键词： Passivation Insulated gate bipolar transistors Stress Failure analysis Ions Metallization Multichip modules

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Design of prognostic circuit for electromigration failure of integrated circuit

Design of prognostic circuit for electromigration failure of...

引用

International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Y. Q. Chen B. Wang Y. F. Zhang Y. F. En Y. Huang Y. D. Lu L. X. Liu X. H. Wang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou Guangdong School of Electronic and Information Technology South China University of Technology Guangzhou Guangdong Science and Technology on Reliability Physics and Application of Electronic Component Laboratory and the No.5 Electronics Research Institute of Ministry of Industry and Information Technology Guangzhou Guangdong China Department of Microelectronics Xidian University Xi'an Shanxi China

ISBN: (纸本)9781479904792

A prognostic circuit for electromigration failure of integrated circuit was proposed, and it was simulated on the base of the SMIC 0.18 um mixed-signal CMOS process model. The prognostic circuit is composed of stress and detection module, two-stage comparator, offset voltage cancellation module, non-overlapping clock generation module, and output module. When the increase amount of resistance for interconnect line exceeds a preset value due to electromigration, the output of the prognostic circuit designed to fail faster will jump from low voltage to high voltage. It indicates the impending failure of hosted circuit because of that the prognostic circuit experiences the same manufacturing process and operational environment as the hosted circuit. The research results are useful for the prediction of performance degradation and failure of integrated circuit.

关键词： reliability Packaging Monitoring

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