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Key failure modes of solder joints on ENIG PCBs and root cause analysis

Key failure modes of solder joints on ENIG PCBs and root cau...

引用

International Conference on (ICEPT) electronic Packaging technology

作者： Bin Yao Yabing Zou Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.110 Dongguanzhuang Rd Guangzhou Guangdong China China Electronic Product Reliability and Environmental Testing Research Institute No.110 Dongguanzhuang Rd Guangzhou Guangdong China

The plating system of electroless nickel immersion gold (ENIG) has been widely used to finish solder pads of printed circuit boards (PCBs). The most attractive advantage of ENIG over other finishes is that it can be applied to fine-pitch assemblies such as BGAs, for superior surface mount component placement and solderability because of its coplanarity. ENIG is used by many board shops and is an established process. But recently many problems occur in ENIG solder joints. The worst cases are BGA package solder joint failures during the surface mount assembly process, or in the product's final use by a consumer. Based on the authors' long-term experience of solder joints failure analysis, two kinds of key failure modes for ENIG solder joints were found. One was poor wetting (non-wetting or de-wetting) of the solder to the ENIG surface finish on PCB pads during soldering process, and the other one was solder joint crack or separation from the nickel layer surface, causing an electrical open. At the same time, several typical solder joint failure cases were used to show how the two kinds of failure modes occurred. SEM was used to reveal more details of the microstructure of ENIG plated pad surface and the fracture at the interface between solder and metal pad. The plating composition and phosphorous (P) content were determined by EDX analysis. Additionally the failure mechanisms were investigated. The root cause for poor wetting was the poor solderability of corroded Ni layer which was the result of galvanic hyper-corrosion of the plated electroless Ni by the Au plating bath. For solder joint crack, the reason was the weak bonding due to P-rich layer resulted from Ni depletion at the surface from IMC formation. Finally, in order to prevent the two kinds of key failure modes, several suggestions were given.

关键词： Nickel Surface cracks Joints Soldering Corrosion Gold Surface treatment

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Effect of dummy via on the SIV performance of narrow-wide copper interconnection

Effect of dummy via on the SIV performance of narrow-wide co...

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International Conference on (ICEPT) electronic Packaging technology

作者： Xiao-ling Lin Meng Li Qing-zhong Xiao Xiao-wen Zhang Science and Technology on Reliability Physics and Application of Electrical Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610 China Machinery Engineering and Automation Program Changchun University 130022 China

Based on the stress induced void theory, three kinds of narrow-wide two-layer copper interconnection structure with dummy via in M1 were designed and put under different high temperature conditions for test. Under the action of high temperature, influence of dummy vias in lower layer metal (M1) on the failure phenomenon of the interconnect structure was analyzed. The result shows, adding dummy via in M1 can effectively improve the SIV performance of copper interconnection. Based on this, a more accurate equation was put forward to describe the behavior of the vacancy in the structure with dummy via spreading from the diffusion source to the accumulation.

关键词： Stress Abstracts Resistance reliability Plastics Argon Lead

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Analytical Drain Current Model for Organic Thin-Film Transistors

Analytical Drain Current Model for Organic Thin-Film Transis...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit technology(ICSICT-2012)

作者： Hongyu He Jin He Wanling Deng Mansun Chan Yuan Liu Ruohe Yao Bin Li Xueren Zheng Peking University Shenzhen SOC Key Laboratory PKU-HKUST Shenzhen-HongKong Institution Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Science and Technology on Reliability Physics and Application of Electronic Component Laboratory School of Electronic and Information Engineering South China University of Technology

Two analytical drain current models for organic thin-film transistors(OTFTs)are *** first one is the surface potential based drain current model considering both deep and tail trap states densities within the energy gap,and the model is valided in both subthreshold and above-threshold *** second one is the polynomial based model valided in above-threshold regime,and the model has the advantage in the simple parameter extraction steps by fitting the experimental effective mobility with the polynomial *** presented models are verified with the experimental data, and good agreements are obtained.

关键词： Analytical Drain Current Model for Organic Thin-Film Transistors Model

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Thermal analysis of DC/DC power module based on innovative model with the application of active area loading

Thermal analysis of DC/DC power module based on innovative m...

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International Conference on (ICEPT) electronic Packaging technology

作者： Kai-lin Pan Ganggang Liu Xiaoqi He Bin Zhou School of Mechanical and Electrical Engineering Guilin University of Electronic Technology No.1 Jinji Road China 541004 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI No.110 Dongguanzhuang Road Tianhe District Guangzhou China 510000

Thermal simulation and analysis play a significant role in development of new generation of DC/DC package design and system integration. This paper presents an innovative model for thermal simulation and analysis with the application of active area loading. In traditional model, resistor, inductor, transformer and similar components are usually simplified into a homogeneous body with the same size of package outline. In the current model, the detailed geometry and material are embodied, including the heating area referenced as active area loading. And according to the manufacturing process used for the component, the height of active area is computed by equivalent method. For comparisons, the innovative model and traditional model were developed for the same DC/DC power module with the application of Pro/E software. And the thermal simulation and analysis were processed in the platform of ANSYS Workbench. Under the same boundary conditions and heat convection coefficient, the thermal distributions of DC/DC module were predicted in two models, and verified by infrared thermal images, which shows that the current model is more accurate.

关键词： Computational modeling Semiconductor process modeling Magnetic cores Atmospheric modeling Load modeling Heating Analytical models

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Failure analysis of LEDs

Failure analysis of LEDs

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2011 International Symposium on Advanced Packaging Materials, APM 2011

作者： Guoguang, Lu Shaohua, Yang Zhifeng, Lei CEPREI Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou 510610 China

ISBN: (纸本)9781467301473

Light-emitting diodes (LEDS) are a strong candidate for the nest-generation general illumination applications. The reliability of LEDs is the key point for its applications, and the main challenges facing the development of high reliable LED is packaging process. In this paper, the overview of state of the art techniques in LED failure analysis is provided, and the main failure modes such as bonding defects, die attaching defects and other defects that caused by poor package process are investigated through some failure analysis cases. © 2011 IEEE.

关键词： Light emitting diodes

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Studies of the degradation mechanisms in high power diode lasers

Studies of the degradation mechanisms in high power diode la...

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2011 International Symposium on Advanced Packaging Materials, APM 2011

作者： Guoguang, Lu Yun, Huang Zhifeng, Lei CEPREI Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou 510610 China

ISBN: (纸本)9781467301473

The main failure mechanisms of high power diode lasers such as material defects, mirror damage and solder related failures as well as to methods which significantly suppress the occurrence of catastrophic failure and solder related failures are investigated in this paper. Meanwhile, in order to obtain the lifetime data of high power QCM cm-bar arrays, we have set up an automated diode array reliability experiment to examine the characteristics of high power QCW cm-bar arrays over time, and aging test results up to 2.0×109 shots at 25°C will be reported. © 2011 IEEE.

关键词： Semiconductor lasers

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Experimental studies of non-Fickian moisture diffusion in plastic packages

Experimental studies of non-Fickian moisture diffusion in pl...

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2011 International Symposium on Advanced Packaging Materials, APM 2011

作者： Yang, Shaohua Liu, Hailong Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China CPREI Laboratories Guangzhou 510610 China

ISBN: (纸本)9781467301473

Moisture penetrating into the polymer and subsequent hygroswelling stress play an important role in the integrity and reliability of plastic electronic packages. In this paper, moisture absorption experiments of four types of plastic encapsulated microcircuits (PEMs) were conducted. Moisture diffusion characteristics of PEMs available by experiments were measured and typical moisture diffusion characteristics were calculated. Fickian second law controls distribution of moisture concentration in plastic packages, and it was found that moisture transport deviations from ideal Fickian behavior under the higher temperature and humidity stresses, which is the so-called non-Fickan diffusion. It was attributed to the "two-stage" sorption. Analysis of moisture diffusion coefficients shows that different packages have values varying largely. Besides, comparing the saturated moisture and vapor concentration, it can be found that the moisture exists with combining state of liquid and vapor in plastic electronic packages, which probably a main cause of non-Fickian moisture diffusion. So the experimental results indicated that it's necessary to measure the moisture diffusion coefficient in plastic electronic packages in order to reduce potential risk during their assembly process and long-term applications. © 2011 IEEE.

关键词： Risk assessment

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The effect of thermal stress on high density packaging integrated circuits

The effect of thermal stress on high density packaging integ...

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2011 International Symposium on Advanced Packaging Materials, APM 2011

作者： Yao, Bin Lai, Ping Liu, Jian Liang, Xiaosi Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute No.110 Dongguanzhuang Rd Guangzhou Guangdong China

ISBN: (纸本)9781467301473

The trend of electronics industry is toward advanced high density packaging technologies. The reliability of integrated circuits (ICs) which is significantly affected by thermal stress has become more essential as the packaging density increases. In this paper, an accelerated thermal reliability test method for evaluating the packaging reliability of ICs which includes hot step, cold step and rapid thermal cycling test is presented. The technology of FIMV (Force current measure voltage) was applied during the reliability test as an indicator of degradation of packaging property, which allowed the reliability performance of ICs to be assessed in real time. The experimental results showed that the thermal stress resulted in the degradation of interfacial adhesion of plastic packaging ICs. Because of the temperature changing during the rapid thermal test, the strain and stress due to the coefficient of thermal expansion (CTE) mismatch between the encapsulant and the adjacent materials could contribute to delamination or de-adhesion. In some cases it was directly linked to a failure if some severe defects occured because of delamination, such as wire bond lift-off or fracture. Crack in die attach adhesive based on the same failure mechanism was also found. Additionally, unwanted brittle Au-Al intermetallic compound was detected at the bond interface because of the effect of high temperature. The formation of the Au-Al intermetallic compound led to the increase of electrical resistance and the weakening of bond strength which resulted in bond lift-off finally. At last future research work in this field is suggested. © 2011 IEEE.

关键词： Intermetallics

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A study of solder joint degradation and detection using RF impedance analysis

A study of solder joint degradation and detection using RF i...

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2011 International Symposium on Advanced Packaging Materials, APM 2011

作者： Yao, Bin Lu, Yudong Wan, Ming Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute No.110 Dongguanzhuang Rd Guangzhou Guangdong China

ISBN: (纸本)9781467301473

The trend of many types of electronic products is toward higher operating frequencies. At high frequencies, the signal propagation is concentrated at the surface of interconnects, which is known as the skin effect. Therefore, even a samll crack at the surface of a solder joint may directly influence the performance of high speed electronic assemblies. Degradation of solder joints, such as cracking due to fatigue or stress, generally initiates at the surface where the strain range is maximized, and propagates inward. Traditional DC resistance measurements are not able to sense partial cracks in solder joints. RF impedance analysis, which is capable of detecting small cracks, offers an improved means of monitoring the degradation of solder joints of high speed electronic products. In this study, RF impedance changes are used as an early indicator of degradation of solder joints, due to the skin effect, compared with DC resistance measurements. Impedance-controlled circuit boards on which surface mount components were soldered have been developed. Partially and entirely cracked solder joints were produced for test in advance. The RF impedance was observed to increase in response to partial cracking of the solder joint, while the DC resistance did not indicate any anomalies. The technique of RF impedance analysis shows potential as a prognostic tool that can provide advanced warning of impending failures of solder joint. At last future research work in this field is suggested. © 2011 IEEE.

关键词： Surface mount technology

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Quality and reliability of digital soft IP core and a qualification framework

Quality and reliability of digital soft IP core and a qualif...

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2011 International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering, ICQR2MSE 2011

作者： Wang, Li-Wei Luo, Hong-Wei School of Electronic and Information Engineering South China University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Laboratories Guangzhou China

ISBN: (纸本)9781457712326

Quality and reliability of IP block is essential to the successful development of today's complex SoC design. In this paper, we discuss vital issues about the quality and reliability of digital soft IP, and propose a qualification metric system which is able to evaluate IP quality and reliability. The metric system consists of nine parts to characterize IP quality and reliability. Based on this metric system, we propose an extensive IP qualification framework. XML schema technique is used to describe the quality and reliability model, which can be easily extended to accommodate new qualification criteria. As a case study, the presented framework has been used to qualify three open source IP cores. The experimental results show that the metric system and the qualification framework presented in this paper can not only evaluate IP quality and reliability quantitatively, but also accelerate the qualification process and improve accuracy of qualification results. © 2011 IEEE.

关键词： reliability

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