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检索条件"机构=Science and Technology on Reliability Physics and Application of Electronic"

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Life Character Analysis Methods of Storage electronic Components

Life Character Analysis Methods of Storage Electronic Compon...

引用

2011 International Conference on Quality,reliability,Risk,Maintenance,and Safety Engineering(2011年质量、可靠性、风险、维修性与安全性国际会议暨第二届维修工程国际学术会议 ICQR2MSE 2011)

作者： Xin LIU Wenxiao FANG CEPREI Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

Lots of military equipments are in storage, and the equipments are need to evaluate whether showing degenerate character or not，or whether meeting the requirements to use continually or not. Electric components are basic elements, and it is important to evaluate the life character in storage. In this article, the typical components, tantalum capacitor, electromagnetic relays and resistor included, are analyzed with the way of external visual inspection, key electric meters test, inner visual inspection and. 3 analysis cases show that external and inner visual inspection can find life characters of electric components, degeneration of key electric meter can be analyzed by key electric meter test. It can be analyzed effectively for life character of electric components in storage with those analysis ways.

关键词： life character analysis storage electronic components mothods

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Effect of Gate Bias on ESD Characteristics in NMOS Device

Effect of Gate Bias on ESD Characteristics in NMOS Device

引用

2011 International Symposium on Advanced Packaging Materials(2011年先进电子封装材料国际会议APM)

作者： Yu juan HE Yunfei EN Qingzhong XIAO Hongwei LUO Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Gu Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Gu

@@ I. Purpose Oxide trapped charges which were produced in oxide area of MOSFET in the process of using can cause ESD characteristic changed. So the gate forced given bias to Simulate oxide trapped charges. In this paper, TLP test method was used to study the ESD parameters of NMOSFET with various gate biases. It was indicated that the threshold voltage Vtl and secondary breakdown current lt2 first increased and then decreased with the gate voltage increasing, but the maintained Voltage Vsp essentially unchanged.

关键词： Logic gates Electrostatic discharges Threshold voltage MOSFET circuits Breakdown voltage Materials

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Effect of Channel Width on ESD Characteristics of SOI MOS Device

Effect of Channel Width on ESD Characteristics of SOI MOS De...

引用

作者： Yujuan HE Qingzhong XIAO Yunfei EN Hongwei LUO Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Gua Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Gua

The ESD characteristic of gate grounded NMOS device with different channel width was studied. It was indicated that the effect of channel width on threshold voltage (Vt1) and maintained voltage (Vsp) was imperceptible and the longer channel width, the larger ESD secondary breakout current (It2). This was probably related to decreased body resistance in thin silicon layer of SOI NMOSFET.

关键词： ESD protection SOI TLP test GGNMOS channel width secondary breakout current

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The “Popcorn Effect” of Plastic Encapsulated Microelectronic Devices and the Typical Cases Study

The “Popcorn Effect” of Plastic Encapsulated Microelectron...

引用

作者： Yuan CHEN Ping LI National Key Laboratory of Science and Technology on Reliability Physics and Application of Electron National Key Laboratory of Science and Technology on Reliability Physics and Application of Electron

Plastic encapsulated microelectronic devices are gaining acceptance over traditional hermetic parts in avionics, telecommunications, military, and space applications due to advantages in size, weight, cost, availability, performance, and state of-the-art technology and design. Despite so many advantages moisture induced delamination and cracking (called popcorning) is a real problem influencing reliability. “Popcorn effect” is one of the most common failure mechanisms of plastic encapsulated microelectronic devices. The paper introduced the cause that resulted in “popcorn effect”. During high-temperature moisture present in a plastic package can vaporize and exert stress on the package. This stress causes the package to crack and also causes delamination between the mold compound and the lead frame or die. To prevent damage from “popcorn effect”, plastic encapsulated microelectronic devices should be baked before assembly to drive out the moisture. Then, two typical cases on plastic encapsulated microelectronic devices of different package mode were studied in order to further research “popcorn effect”. One was PBGA package and the other was PQFN package. Both of the failure modes were electrical open or intermittent electrical open. The correlative failure analysis techniques on “popcorn effect” were presented in the cases at the same time. One of the important tools now used to nondestructively inspect the failure feature resulted from “popcorn effect” of plastic encapsulated microelectronic devices was Scanning Acoustic Microscopy (SAM). applications included nondestructive detection of delaminations between lead frame, die face, paddle, heat sink, cracks, and plastic encapsulant. And another destructive technique was cross section analysis which could validate the result of SAM inspection and more visually present the failure appearance. For case one, by C-mode Scanning Acoustic Microscopy (C-SAM) analysis delamination was observed at the interface of the PCB an

关键词： plastic encapsulated devices popcorn effect delamination failure analysis

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Comparison of Two Quality Control Models for Short Run Process Based on Bayesian Analysis

Comparison of Two Quality Control Models for Short Run Proce...

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作者： Qinwen HUANG Wenxiao FANG Jian LIU Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Laboratories Guangzhou China

In dealing with the problem of establishing control limits in short run production, Bayesian approach provides a effective way for are short run process control and are particularly attractive. In this paper, two quality control models for short run process are presented based on Bayesian analysis and the two models are compared. Models are focused on normally distributed data. The first way to establish model is through the posterior density of mean and variance of normally distributed data respectively and the second way is through the posterior predictive density. And the results deduced from two different ways are compared.

关键词： SPC Bayesian analysis posterior distribution

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Studies of the degradation mechanisms in high power diode lasers

Studies of the degradation mechanisms in high power diode la...

引用

2011 International Symposium on Advanced Packaging Materials(2011年先进电子封装材料国际会议APM)

作者： Lu Guoguang Huang Yun Lei Zhifeng CEPREI Science and Technology on Reliability Physics and Application of Electronic Component LaboratoryGuangzhou 510610 China

The main failure mechanisms of high power diode lasers such as material defects, mirror damage and solder related failures as well as to methods which significantly suppress the occurrence of catastrophic failure and solder related failures are investigated in this paper. Meanwhile, in order to obtain the lifetime data of high power QCM cm-bar arrays, we have set up an automated diode array reliability experiment to examine the characteristics of high power QCW cm-bar arrays over time, and aging test results up to 2.0×109 shots at 25 °C will be reported.

关键词： Diode lasers Degradation reliability Aging Materials Heating Mirrors

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Aging Data Analysis for High Power Laser Diodes

Aging Data Analysis for High Power Laser Diodes

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作者： Guoguang LU Yun HUANG Yunfei EN Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Three groups of lifetime test were completed, according to the statistical knowledge, the degradation model of cm-bars is obtained using the short-term working datas, then we obtain the extrapolated lifetime of cm-bars at 25℃ is 7950 hours (2.86×109 shots), and we also obtain an acceleration factor 1.88 of resulting in a thermal activation energy of Ea=0.21eV using Arrhenius function.

关键词： laser diodes lifetime degradation thermal activation energy acceleration factor

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Accelerated reliability Evaluation for High Density Packaging Integrated Circuits

Accelerated Reliability Evaluation for High Density Packagin...

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作者： Bin YAO Ping LAI Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

The demand for miniaturization, increased functionality, better performance and lower cost has forced the electronics industry to shift from traditional packaging techniques to advanced high density packaging technologies. As the packaging density increases, the packaging reliability becomes more essential. In this paper, an accelerated reliability test method to evaluate the packaging reliability of high density packaging integrated circuits (Ics) is presented. Differing from the traditional reliability prediction methods, the technology of FIMV (Force current measure voltage) was applied during the reliability test which allowed the reliability performance of Ics to be assessed in real time. It was found that the voltage changed correspondingly for the different stress changing conditions. So it is validated that the use of FIMV technology as an indicator of degradation of packaging property is effective. The experimental results show that thermal cycling stress can affect the adhesion of the interfaces in plastic packaging Ics. Temperature change during the thermal cycling test and the mismatch between the CTEs of the encapsulant and the adjacent material of plastic packaging Ics can lead to thermo-mechancial stresses that can cause delamination or de-adhesion. Additionally it is found that unwanted Au-Al intermetallic compound may form at the bond interface because of the effect of high temperature. The formation of the unwanted Au-Al intermetallic compound will reduce the bond strength and lead to wire bond lift-off finally. At last future research work in this field is suggested.

关键词： accelerated reliability test high density packaging thermal cycling stress delamination Au-Al intermetallic compound

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The Gate Metal Degradation Mechanism and Electromigration Evaluation of PHEMT Devices

The Gate Metal Degradation Mechanism and Electromigration Ev...

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作者： Yun HUANG Shajin LI Xiao HONG Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guang Zhou China

An evaluation structure about gate metal degradation of pseudomorphic High-Electron Mobility Transistor (PHEMT) is designed in this study. It realized separated evaluation of the resisted electromigration levels between the evaporation metal Ti/Pt/Au and the plating metal Au in gate metal structure. There are 4 multiple disparities between their resisted electromigration levels. And the resisted electromigration levels of electrioplating Au in gate metal Ti/Pt/Au－Au structure is the weakest. The Ti/Pt/Au-Au electromigration life under constant current stress and high temperature stress test has been obtained, evaluated the stability of PHEMT gate metal, provided reference and basis for the PHEMT power components designers to improve the stability of gate metal structure.

关键词： PHEMT electromigration mechanism evaluation

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Single Event Effects Test for CMOS Devices Using 1064nm Pulsed Laser

Single Event Effects Test for CMOS Devices Using 1064nm Puls...

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作者： Zhifeng LEI Hongwei LUO Hui CHEN Qian SHI Yujun HE Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guang Zhou China

Presently one challenge facing electronics operating in outer space is that trapped protons and electrons from Earth’s radiation belts and cosmic rays may cause semiconductor devices material ionization during which extra ionized charges inside the device in one single node accumulate to the threshold and SEE (Single Event Effects) occurred, even causing device burned. This paper illustrate the new method of SEE testing using pulsed laser, from which pulsed laser automatic scanning experiment was used to SEE research of DDS (Direct Digital Synthesizer), and SEL (Single event Latch-up), SEFI (Single Event function interruption), and Large frequency jitters had observed in chip scanning process. It is concluded that pulsed laser is a valid supplement for heavy ion accelerator in the test of SEE, and also can testify single event phenomenon in device quickly and help positioning sensitive nodes.

关键词： pulsed Lase CMOS devices radiation

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