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reliability evaluation of PMS considering coupling effect of functional and physical dependency

Chinese Journal of Aeronautics 2022年第2期35卷 154-163页

作者： Ying CHEN Qichao MA Rui KANG Science and Technology on Reliability and Environmental Engineering Laboratory Beihang UniversityBeijing 100083China Institute of Electronic Engineering China Academy of Engineering PhysicsMianyang 621999China

Aviation and aerospace system are typical Phased-Mission Systems(PMSs)featured with varying configuration,phased load condition and cross phase failure *** coupling effect of Functional Dependency(FDEP)and Physical Dependency(PDEP)has a unique influence on the failure behavior of *** this article,the coupling effect is analyzed,and the degradation of components is modeled with the positive drift wiener process,in which the drift coefficient is related to environmental conditions and operation ***,failure behavior and system reliability are *** avionics controller is studied as a case,with the degradation time distribution model and simulation algorithm,the coupling effect and dynamical system reliability can be *** show that this modeling method can describe the coupling effects of FDEP and PDEP and their influence on the failure behavior and reliability of the PMS system.

关键词： Functional dependency Phased-mission system Physical dependency reliability evaluation Stochastic degradation process

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A K/Ka-Band Frequency Reconfigurable GaN LNA for Multi-Band Communication applications

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Chinese Journal of electronics 2025年第3期34卷 739-748页

作者： Zeng Dingyuan Zhu Haoshen Gao Outong Cai Zongqi Che Wenquan Xue Quan Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz School of Electronic and Information Engineering South China University of Technology Guangzhou 510641 China Guangdong-Hong Kong-Macao Joint Laboratory for Millimeter-Wave and Terahertz School of Electronic and Information Engineering South China University of Technology Guangzhou 510641 China Department of National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610 China

A frequency reconfigurable low noise amplifier (LNA) in a 0.15-μm gallium nitride (GaN) high-electron-mobility-transistor process is presented. The concept of frequency reconfiguration utilizing a switch-based reconfigurable resonator (SBRR) to adjust the resonant frequency and introduce a transmission zero in the lower out-of-band region is discussed. Additionally, a K/Ka-band frequency-reconfigurable LNA that incorporates the SBRR is designed and fabricated for validation. The proposed LNA features a small-signal gain of 13.9/8.9 dB and a noise figure of 2.4/3.2 dB at 21/30 GHz. The measured output power 1-dB compression point (OP1-dB) is 5.5/6.7 dBm at 21/30 GHz, respectively. The chip size is 1.5 × 1.75 mm2. The reconfigurable GaN LNA is attractive for future multi-band communication systems compatible for multiple standards.

关键词： Gallium nitride (GaN) Low noise amplifier (LNA) Monolithic microwave integrated circuit Reconfigurable Multi-band

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Laser Induced Single Event Upset (SEU) Testing of Commercial Memory Devices with Embedded Error Correction Codes (ECC) 5

Laser Induced Single Event Upset (SEU) Testing of Commercial...

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2022 5th International Conference on Power electronics and Control Engineering, ICPECE 2022

作者： Han, Yang Liu, Yurong Lei, Zhifeng Zhang, Zhangang He, Yujuan School of Electronic and Information Engineering South China University of Technology Guangzhou510641 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

Results of laser-induced single event upset testing of devices with embedded error correction codes are described. Specifically, the memory system, consisting of a Micron MT41K256M16TW-107 IT: P 32 Meg×16×8 banks Dual Dynamic Random Access Memories (DDRs) was tested on a self-made test board. Two samples of each memory system or device type were irradiated with a pulsed laser. The units were irradiated by using a continual read/write correct loop in several bit patterns. Results for both correctable and uncorrectable errors are presented along with soft error data records. © Published under licence by IOP Publishing Ltd.

关键词： Pulsed lasers

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Simulation and experiment of microstrip lines temperature rise based on COMSOL Multiphysics 7

Simulation and experiment of microstrip lines temperature ri...

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7th IEEE International Symposium on Electromagnetic Compatibility, ISEMC 2023

作者： Huang, Lijuan Liao, Jinfu Fang, Wenxiao Wang, Jianying School of Electronic and Information Engineering South China Normal University Foshan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Integrated Circuit Sun Yat-Sen University Guangzhou China

ISBN: (纸本)9798350333107

Conductor loss and dielectric loss of the microstrip line can lead to temperature rise and limit the power capacity of the microstrip circuit. This involves the interaction (coupling) between the electric and temperature fields. In this study, the factors affecting the temperature rise of the microstrip line were analyzed by means of the parallel plate model. In addition, based on COMSOL Multiphysics simulation software, the influence of dielectric dissipation factor tanδ of microstrip lines of FR4 and RO4350B on the temperature rise per unit input power (TRPIP) was simulated. The simulation results under the set basic parameters show that the TRPIP of the strip conductors of the FR4-substrate microstrip lines with tanδ of 0.02 is about 4.8 °C, and that of RO450B-substrate microstrip lines with tanδ of 0.0037 is about 1.38 °C. Finally, in order to verify the simulation results, a non-invasive measuring device with an infrared camera was constructed to measure the heat distribution on the surface of the microstrip line. © 2023 IEEE.

关键词： Multiphysics

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A Measurement Amplification Method for TSV Weak Resistance 3

A Measurement Amplification Method for TSV Weak Resistance

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2022 3rd International Conference on Electrical technology and Automatic Control, ICETAC 2022

作者： Gong, Tao Zeng, Sheng Chen, Si Lu, Xiangjun Shao, Dengyun School of Materials Science and Engineering Xia Men University of Technology Xiamen361024 China Nanjing Electronic Devices Institute Nanjing210016 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou511370 China

In the TSV electromigration test process, this paper has carried out relevant research on how to accurately measure TSV resistance and make it conducive to the observation of standard instruments, aiming at the problem that the resistance value of TSV reaches the magnitude of a microburst. Observing the resistance value change in the electromigration process is challenging. This paper analyzes and designs a measurement circuit for TSV. This circuit uses the cascade of an integrated amplifier. It combines with the four-probe method to amplify the TSV resistance change signal based on accurate measurement of TSV resistance, which is more conducive to the measurement of standard instruments and makes it easier to observe the change of resistance when TSV electromigration occurs. © Published under licence by IOP Publishing Ltd.

关键词： Electromigration

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Research on Intelligent Detection Method for IC Surface Defects Based on Convolutional Neural Network

Research on Intelligent Detection Method for IC Surface Defe...

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International Conference on (ICEPT) electronic Packaging technology

作者： Yue Zhao Hongfeng Lv Zhizhe Wang Jun Luo Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Surface Defects Detection of integrated circuit (IC) is one of the important means to ensure the quality and reliability of components. Nowadays, most inspection institutions mainly rely on manual visual inspection, with disadvantages such as poor accuracy, low efficiency, and susceptibility to subjective factors. However, insufficient image data of typical defects in IC products and missing tag databases are key obstacles in the process of promoting intelligent appearance inspection. Therefore, this paper proposes a data construction technology for IC surface defects, designs a unified image processing process, and forms a computer-available component appearance defect database using labeling software. The database contains 7 categories of metal packaging IC and 4 defect types. On this basis, this paper uses different defect detection models to test the availability of the database, and conducts comparative experiments to analyze the model detection capabilities. The experimental results show that the designed defect image database can achieve intelligent detection applications for IC surface defects.

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Thermal Management Method of Three-dimensional Integrated Inductors Based on Dielectric-cavity TSV technology

Thermal Management Method of Three-dimensional Integrated In...

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International Conference on (ICEPT) electronic Packaging technology

作者： Wangjun Zhou Chenbing Qu Zhiwei Fu Si Chen Liwei Wang Chen Sun Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute China Guangzhou Institute of Technology Xidian University China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

This paper proposes a 3D passive inductor model based on dielectric-cavity TSV technology and investigates its thermal management. Compared to a TSV-based 3D inductor in silicon substrate, it has a 20% higher Q-factor, but also experiences a 700% increase in peak temperature. Finite element simulation and analysis indicates that the upper insulation layer mainly hinders heat conduction. Thus, a thermal TSV is added for heat dissipation. Through finite element analysis, theoptimized dielectric-cavity-TSV inductorexhibited a temperature peak value approximately 20% lower than the original model.

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Electromagnetic Pattern Cluster in Latent Space in Near Filed Scanning of a Device 22

Electromagnetic Pattern Cluster in Latent Space in Near File...

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Proceedings of the 2022 5th International Conference on Algorithms, Computing and Artificial Intelligence

作者： Quan Huang Yuxin Wu Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute China

ISBN: (纸本)9781450398336

Electromagnetic pattern is an image generated from near field electromagnetic field of a device such as microprogrammed control unit (MCU) when it is working. Many Electro-Magnetic Interference (EMI) sources can be located using the electromagnetic patterns. The cluster of electromagnetic patterns is helpful to distinguish the types of EMI, and problems caused by the same EMI are basicly addressed in the same way. Different frequencies in integrated circuite (IC) can have the same electromagnetic patterns, especially for those frequencies that are multiple integer of a small frequency called the basic frequency. The magnitude of electromagnetic pattern becomes weak when the the corresponding frequency gets higher, which makes the EMI source cluster inaccurate. To tackle this problem, we cluster the electromagnetic patterns in the latent space.

关键词： cluster electromagnetic pattern emssion source

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Investigation of Trap States and Reverse Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off Substrate

Investigation of Trap States and Reverse Leakage in Fully-Ve...

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International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： Feng Zhou Wei Qi Teng Ma Can Zou Junfan Qian Weizong Xu Yiwang Wang Dong Zhou Fangfang Ren Dunjun Chen Rong Zhang Youdou Zheng Hai Lu School of Electronic Science and Engineering Nanjing University Nanjing China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350394825

ISBN: (纸本)9798350394832

Lase lift-off (LLO) substrate technology is a promising solution for realizing fully vertical GaN devices based on foreign substrates. By performing deep-level transient spectroscopy (DLTS) experiments and temperature-dependent leakage current characterizations, this work investigates the trap states and leakage mechanisms of fully-vertical GaN Schottky barrier diodes (SBDs) based on LLO substrate, laser annealing and N-implantation termination. By fitting the DLTS spectral signal, the energy levels of the two electron trap states are determined to be $E_{C}$ - 0.6 e V and $E_{C}$ - 0.21 eV respectively, which should originate from the intrinsic traps in GaN epitaxy rather than being introduced by the LLO process. Furthermore, the leakage currents of the device are found to be dominated by Poole-Frenkel emission (PFE, < 35 V), variable range hopping (VRH, 35 ~ 100 V) and trap-assisted tunneling (TAT, > 100 V), respectively, as the bias voltage increases. These results provide important new insights into the implementation of laser lift-off technology in GaN-based power devices.

关键词： Performance evaluation Schottky diodes Electron traps Spectroscopy Annealing Semiconductor lasers Schottky barriers

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An Artificial Intelligence Near-Field Probe Calibration Method Based on Generative Adversarial Network

An Artificial Intelligence Near-Field Probe Calibration Meth...

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IEEE International Wireless Symposium (IWS)

作者： Shan Xue Yangyang Zhou Jiong Tang Yu Liu Weiheng Shao Duo-Long Wu Xinxin Tian Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China School of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou China

ISBN: (数字)9798350389999

ISBN: (纸本)9798350390001

The near field scanning method specified in the international standard IEC-61967 is an important international diagnostic method for detecting electromagnetic compatibility problems. The near-field probe, as an important part of near-field scanning, mainly detects the magnetic field or electric field. The measurement accuracy of the near field probe directly affects the measurement accuracy of the electromagnetic field on the surface of the device, affecting the accuracy of electromagnetic compatibility diagnostics. To ensure measurement accuracy, it is essential to carry out near-field probe calibration. In this work, we proposed an artificial intelligence probe calibration method based on the generative adversarial networks, which helps improve the difference of calibration parts’ quality difference measurement field and eliminate the unnecessary influence field on the probe performance. Based on the proposed method, we effectively calibrate two kinds of electric field probes, which overcomes the problem of the difference of calibration parts’ quality difference measurement field, and eliminate the influence of unnecessary field to the probe performance.

关键词： Wireless communication Magnetic field measurement Accuracy Electric variables measurement Generative adversarial networks Electromagnetic compatibility Calibration Probes Electric fields Artificial intelligence

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