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12th International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering, QR2MSE 2022

作者： Yu, Pengfei Wang, Gang Huang, Yun Huang, Chuangmian Lu, Guoguang School of Electric Power Engineering South China University of Technology Guangzhou China Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Technology and Planning Office China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (纸本)9781839538360

Supercapacitors are new types of electrical energy storage components with an electric double layer. Ageing characteristics, lifetime and reliability evaluation are of great significance for quality evaluation and rational use. This paper focused on the pseudo-failure calendar lifetime distribution and reliability evaluation of supercapacitors. High-temperature accelerated calendar ageing test of supercapacitors is carried out, and equivalent series resistance and capacitance were tested. Pseudo-lifetime is calculated and distribution is fitted. Fitting results showed that the pseudo-lifetime of supercapacitors is more in line with Weibull distribution. Finally, the reliability curve and its bounds with 95% confidence are made, as a result of the reliability evaluation of supercapacitors. © 2022 IEEE.

关键词： Supercapacitor

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Experimental Evaluation of Dynamic On-resistance and Switching Performance of Cascode GaN HEMTs 14

Experimental Evaluation of Dynamic On-resistance and Switchi...

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14th International Conference on reliability, Maintainability and Safety, ICRMS 2023

作者： Li, Yao He, Xuan He, Liang He, Zhiyuan Ni, Yiqiang Han, Xiaobiao Liu, Jun Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits School of Electronics and Information Engineering Anhui University Hefei China School of Electrical Engineering University of South China Hengyang China

ISBN: (纸本)9798350329988

The dynamic on-resistance degradation and switching performance of a commercial 6S0 V cascode GaN power device are evaluated. A double-pulse test platform is used to investigate the dynamic on-resistance behaviors with various off-state drain bias voltages, drain currents, and off-state stress times under hard-switching conditions. To evaluate switching performance, an Si-based metal-oxide-semiconductor field-effect transistor (MOSFET) is used as a reference for comparing dynamic on-resistance and switching energy loss with cascode GaN high-electron-mobility transistors (HEMT). The test results indicate that higher off-state drain bias and drain current lead to more severe dynamic on-resistance degradation. Moreover, with a higher switching speed, the cascode GaN HEMT demonstrates a reduced switching energy loss compared to that of the Si-based MOSFET. © 2023 IEEE.

关键词： Gallium nitride

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Effect of the Off State/Half-On State/On State Electrical Stresses on the reliability of Packaged D-Mode GaN/AlGaN HEMTs

Effect of the Off State/Half-On State/On State Electrical St...

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International Conference on (ICEPT) electronic Packaging technology

作者： Dongsheng Zhao Lijuan Wu Yijun Shi Qingzong Xiao Guoguang Lu Zhiyuan He Liang He Zigui Tu Jie Yuan School of Physical and Electronic Changsha University of Science and Technology Changsha China Application of Electronic Component Laboratory CEPREI The Science and Technology on Reliability Physics Guangzhou China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In this study, different typical electrical stresses (ES) were applied to the depletion mode GaN/AlGaN high electron mobility transistors (HEMTs) to simulate the application scenarios in real production and life. By applying three kinds of typical electrical stress, we observed the device static obvious changes in the electrical parameters are as follows: (1) Compared with the original device, the threshold voltage VTH of the device has obvious left drift, and the transconductance and Rds,on decrease under the Off State electrical stress; (2) Under the Half-On State/On State electrical stress, the threshold voltage of the device is positively skewed, the on-resistance Rds,on increases, and the saturation leakage current Idsat decreases significantly. The experiments reveal the dependence of threshold voltage (VTH), peak transconductance (Gmmax) and saturation leakage current (Idsat) on different stress modes, which provides an intentional reference for the quality and reliability of subsequent GaN/AlGaN HEMTs practical production applications.

关键词： Degradation Charge carriers Production HEMTs Threshold voltage Leakage currents MODFETs

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Study on the Mechanism of High Power Microwave Radiation Effect of GaN LNA

Study on the Mechanism of High Power Microwave Radiation Eff...

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International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE)

作者： Min Liu Zongqi Cai Li'an Bian Anru Lv Houlu Tang Yiqiang Chen Guoguang Lu School of Physical and Electronic Science Changsha University of Science&Technology and CEPREI Guangzhou China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China

ISBN: (数字)9798331533922

ISBN: (纸本)9798331533939

In this paper, a high-power microwave resonant cavity is designed and used to build a high-power microwave radiation experimental system, and the high-power microwave radiation interference effect of GaN low-noise amplifier is studied. Unlike lots of previous papers whose research focuses on the high-power microwave injection damage effects of RF front-end devices, this paper proposes a simple high-power microwave radiation testing system, which can generate a high-power microwave radiation field of 100kV/m under continuous wave and pulse working conditions. The gain of GaN LNA decreases with the increase of high-power microwave radiation field strength, mainly due to the vertical high-power microwave radiation equal to the injection power to the input port of LNA, which causes saturation of the LNA, and reduces its linearity and amplification ability for weak signals. This experimental system greatly reduces the high cost, difficulty, and safety requirements of traditional high-power microwave effect systems. It has certain practical value for conducting high-power microwave radiation experiments on digital circuits such as MCU and FPGA, as well as analog circuit components such as limiters and amplifiers.

关键词： Microwave antennas Linearity Interference Microwave communication Microwave circuits Microwave amplifiers Safety Field programmable gate arrays Digital circuits Microwave propagation

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The study of parameters variation of nMOSFET affected by the HCI 14

The study of parameters variation of nMOSFET affected by the...

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14th IEEE International Conference on ASIC, ASICON 2021

作者： Xiaowen, Zhang Xiaoling, Lin Rui, Gao Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou510610 China

ISBN: (纸本)9781665411493

Hot Carrier injection (HCI) degradation is a critical issue for deep sup micro and nm technology. An Accelerated lifetime experiment is proposed in this paper to study the parameters degradation of nMOSFET induced by the HCI. A Device is considered to fail when a chosen device parameter changes by more than the specified failure criterion at worst use condition (typically VDDMAX= 1.1VDD) at a specified end of life. The results shows that the MTTF of HCI is depend on the parameter choose from. If the failure criteria is |ΔIds,sat/Ids,sat|=10%, then the MTTF has the maximum value. The model parameter m of Substrate/drain current ratio has been compared by using three stress conditions with single stress condition, it shows that the model parameter N obtained by single stress condition has low value. © 2021 IEEE.

关键词： Hot carriers

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Heavy Ion-Induced Permanent Damage in Cascode Power GaN HEMTs

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IEEE Transactions on Nuclear science 2025年

作者： Peng, Chao Yang, Jianqun Lei, Zhifeng Cui, Xiuhai Ma, Teng Zhang, Zhangang He, Yujuan Chen, Yiqiang Lu, Guoguang Hu, Xianghong China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou511370 China Harbin Institute of Technology National Key Laboratory of Material Behavior and Evaluation Technology in Space Environment Harbin150001 China

Heavy ion-induced leakage current increase is reported for a cascode gallium nitride (GaN) high-electron-mobility-transistor (HEMT), which is related to the damages between gate and drain of the embedded depletion-mode GaN HEMT. The local high temperature-induced damage near the drain contact may be directly related to the leakage degradation. The influences of drain bias and temperature on the leakage increase degradation are investigated by irradiation experiments and technology computer aided design (TCAD) simulations. Radiation-induced gate rupture is also observed for the cascode GaN HEMT during Bi ion irradiation with high linear energy transfer (LET) value. Although the depletion-mode GaN HEMT is the most sensitive component to heavy ion irradiation in the cascode GaN HEMT system, there is also a risk of failure for the Si MOSFET component. © 1963-2012 IEEE.

关键词： Gallium nitride

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Research on Internal Defect Detection Algorithm of Ultrasonic Image Based on Attention Mechanism

Research on Internal Defect Detection Algorithm of Ultrasoni...

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IEEE International Conference on Artificial Intelligence and Computer applications (ICAICA)

作者： Yue Zhao Qiuzhen Zhang Jun Luo Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Scanning Acoustic Microscope is a nondestructive and effective technology to detect the internal defects of chips, which is widely used in IC screening. However, at present, the ultrasonic defect detection mainly focuses on traditional visual inspection, which has the disadvantages of low efficiency and high false detection rate. To solve these problems, this paper proposes an ultrasonic defect YOLO detection algorithm by introducing and comparing three common attention modules (SENet, CBAM and ECANet). On the basis of YOLO-v4-tiny model, the attention module is embedded in the feature extraction backbone network to distinguish the importance of different channels in the feature map, strengthen the key features of the target area, and improve the detection accuracy of the network. The experimental results show that the algorithm based on CBAM attention module has better detection accuracy and efficiency.

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Study on Failure Mechanisms of SiC Power Devices Induced by Heavy Ion Irradiation

Study on Failure Mechanisms of SiC Power Devices Induced by ...

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International Conference on Radiation Effects of electronic Devices (ICREED)

作者： Chao Peng Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Radiation-induced degradations of SiC power JBS diodes and MOSFETs are investigated by 181 Ta ion irradiation. The failure mode characteristics and failure mechanism of SiC devices are studied through failure analysi...

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A novel approach for calculating single-source shortest paths of weighted digraphs based on rough sets theory

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Mathematical Biosciences and Engineering 2024年第2期21卷 2626-2645页

作者： Hua, Mingfeng Xu, Taihua Yang, Xibei Chen, Jianjun Yang, Jie School of Computer Jiangsu University of Science and Technology Zhenjiang212100 China Key Laboratory of Oceanographic Big Data Mining Application of Zhejiang Province Zhejiang Ocean University Zhoushan316022 China School of Physics and Electronic Science Zunyi Normal University Zunyi563002 China

Calculating single-source shortest paths (SSSPs) rapidly and precisely from weighted digraphs is a crucial problem in graph theory. As a mathematical model of processing uncertain tasks, rough sets theory (RST) has been proven to possess the ability of investigating graph theory problems. Recently, some efficient RST approaches for discovering different subgraphs (e.g. strongly connected components) have been presented. This work was devoted to discovering SSSPs of weighted digraphs by aid of RST. First, SSSPs problem was probed by RST, which aimed at supporting the fundamental theory for taking RST approach to calculate SSSPs from weighted digraphs. Second, a heuristic search strategy was designed. The weights of edges can be served as heuristic information to optimize the search way of k-step R-related set, which is an RST operator. By using heuristic search strategy, some invalid searches can be avoided, thereby the efficiency of discovering SSSPs was promoted. Finally, the W3SP@R algorithm based on RST was presented to calculate SSSPs of weighted digraphs. Related experiments were implemented to verify the W3SP@R algorithm. The result exhibited that W3SP@R can precisely calculate SSSPs with competitive efficiency. © 2024 the Author(s), licensee AIMS Press. This is an open access article distributed under the terms of the Creative Commons Attribution License.

关键词： Heuristic algorithms

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Benchmarking calculations of excitation energies and transition properties with spectroscopic accuracy of highly charged ions used for the fusion plasma and astrophysical plasma

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Chinese physics B 2023年第11期32卷 179-193页

作者：张春雨王凯司然李金晴宋昌仙吴思捷严碧霜陈重阳 Shanghai EBIT Laboratory Key Laboratory of Nuclear Physics and Ion-beam ApplicationInstitute of Modern PhysicsDepartment of Nuclear Science and TechnologyFudan UniversityShanghai 200433China Department of Physics University of StrathclydeGlasgow G40NGUK Department of Physics and Anhui Key Laboratory of Optoelectric Materials Science and Technology Key Laboratory of Functional Molecular SolidsMinistry of EducationAnhui Normal UniversityWuhu 241000China Hebei Key Laboratory of Optic-electronic Information and Materials The College of Physics Science and TechnologyHebei UniversityBaoding 071002China

Atomic radiative data such as excitation energies, transition wavelengths, radiative rates, and level lifetimes with high precision are the essential parameters for the abundance analysis, simulation, and diagnostics in fusion and astrophysical plasmas. In this work, we mainly focus on reviewing our two projects performed in the past decade. One is about the ions with Z■30 that are generally of astrophysical interest, and the other one is about the highly charged krypton(Z = 36)and tungsten(Z = 74) ions that are relevant in research of magnetic confinement fusion. Two different and independent methods, namely, multiconfiguration Dirac–Hartree–Fock(MCDHF) and the relativistic many-body perturbation theory(RMBPT) are usually used in our studies. As a complement/extension to our previous works for highly charged tungsten ions with open M-shell and open N-shell, we also mainly focus on presenting and discussing our complete RMBPT and MCDHF calculations for the excitation energies, wavelengths, electric dipole(E1), magnetic dipole(M1), electric quadrupole(E2), and magnetic quadrupole(M2) transition properties, and level lifetimes for the lowest 148 levels belonging to the 3l3configurations in Al-like W61+. We also summarize the uncertainties of our systematical theoretical calculations, by cross-checking/validating our datasets from our RMBPT and MCDHF calculations, and by detailed comparisons with available accurate observations and other theoretical calculations. The data are openly available in science Data Bank at https://***/10.57760/sciencedb.10569.

关键词： energy levels transition rates highly charged ions relativistic many-body perturbation theory(RMBPT) multi-configuration Dirac-Hartree-Fock(MCDHF) benchmarking calculations exci-tation energies spectroscopic accuracy

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