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reliability modeling of mutual DCFP considering failure physical dependency

Journal of Systems Engineering and Electronics 2023年第4期34卷 1063-1073页

作者： CHEN Ying YANG Tianyu WANG Yanfang Science and Technology on Reliability and Environmental Engineering Laboratory Beihang UniversityBeijing 100191China

Degradation and overstress failures occur in many electronic systems in which the operation load and environmental conditions are *** dependency of them called dependent competing failure process(DCFP),has been widely *** system may experience mutual effects of degradation and shocks,they are considered to be *** the degradation and the shock processes will decrease the limit of system and cause cumulative ***,the competition of hard and soft failure will cause the system *** on the failure mechanism accumulation theory,this paper constructs the shock-degradation acceleration and the threshold descent model,and a system reliability model established by using these two *** mutually DCFP effect of electronic system interaction has been decomposed into physical correlation of failure,including acceleration,accumulation and *** a case,a reliability of electronic system in aeronautical system has been analyzed with the proposed *** method proposed is based on failure physical evaluation,and could provide important reference for quantitative evaluation and design improvement of the newly designed system in case of data deficiency.

关键词： electronic system dependent competing failure process(DCFP) failure physical dependency threshold descent model competition failure modes

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Pharmacokinetic model for extravascular administration based on uncertain differential equation

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Journal of Ambient Intelligence and Humanized Computing 2023年第10期14卷 13887-13899页

作者： Liu, Zhe Kang, Rui School of Reliability and Systems Engineering Beihang University Beijing100191 China Science and Technology on Reliability and Environmental Engineering Laboratory Beijing100083 China

Pharmacokinetics studies the time course of drug concentration in body compartments, and one of the commonly used methods of administration is extravascular administration. Undoubtedly, biological systems are subject to various internal and external noises that change over time. To rationally deal with these dynamic noises, this paper deduces a pharmacokinetic model for extravascular administration using uncertain differential equations for the first time. Some essential pharmacokinetic indexes such as drug concentration, area under the curve, and maximum drug concentration are investigated. Based on the three basic principles of reliability science, i.e., margin-based reliable principle, eternal degradation principle and uncertainty principle, the belief reliability for drug is investigated. The minimum cover estimation for the set of unknown parameters in this uncertain pharmacokinetic model is provided. Numerical example and a real data analysis illustrate our method in detail. Finally, the paradox of a stochastic pharmacokinetic model is presented. © 2022, The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature.

关键词： reliability

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Belief reliability:a scientific exploration of reliability engineering

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Journal of Systems Engineering and Electronics 2024年第3期35卷 619-643页

作者： ZHANG Qingyuan LI Xiaoyang ZU Tianpei KANG Rui International Innovation Institute Beihang UniversityHangzhou 311115China Science and Technology on Reliability and Environmental Engineering Laboratory Beijing 100191China School of Reliability Engineering and Systems Engineering Beihang UniversityBeijing 100191China School of Aeronautic Science and Engineering Beihang UniversityBeijing 100191China

This paper systematically introduces and reviews a scientific exploration of reliability called the belief *** with the origin of reliability engineering,the problems of present theories for reliability engineering are summarized as a query,a dilemma,and a ***,through philosophical reflection,we introduce the theoretical solutions given by belief reliability theory,including scientific principles,basic equations,reliability science experiments,and mathematical *** basic methods and technologies of belief reliability,namely,belief reliability analysis,function-oriented belief reliability design,belief reliability evaluation,and several newly developed methods and technologies are sequentially elaborated and *** on the above investigations,we summarize the significance of belief reliability theory and make some prospects about future research,aiming to promote the development of reliability science and engineering.

关键词： belief reliability performance margin reliability experiment chance measure uncertainty

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Proton induced radiation effect of SiC MOSFET under different bias

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Chinese Physics B 2023年第10期32卷 708-715页

作者：张鸿郭红霞雷志锋彭超马武英王迪孙常皓张凤祁张战刚杨业吕伟王忠明钟向丽欧阳晓平 School of Material Science and Engineering Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China Northwest Institute of Nuclear Technology Xi'an 710024China

Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)=0.5 V,V_(G)=4 V)and static bias(V_(D)=0 V,V_(G)=0 V)are *** drain current of SiC MOSFET under turn-on bias increases linearly with the increase of proton fluence during the proton *** the cumulative proton fluence reaches 2×10^(11)p·cm^(-2),the threshold voltage of SiC MOSFETs with four bias conditions shifts to the left,and the degradation of electrical characteristics of SiC MOSFETs with gate bias is the most *** the deep level transient spectrum test,it is found that the defect energy level of SiC MOSFET is mainly the ON2(E_(c)-1.1 eV)defect center,and the defect concentration and defect capture cross section of SiC MOSFET with proton radiation under gate bias increase *** comparing the degradation of SiC MOSFET under proton cumulative irradiation,equivalent 1 MeV neutron irradiation and gamma irradiation,and combining with the defect change of SiC MOSFET under gamma irradiation and the non-ionizing energy loss induced by equivalent 1 MeV neutron in SiC MOSFET,the degradation of SiC MOSFET induced by proton is mainly caused by ionizing radiation *** results of TCAD analysis show that the ionizing radiation damage of SiC MOSFET is affected by the intensity and direction of the electric field in the oxide layer and epitaxial layer.

关键词： proton silicon carbide metal–oxide–semiconductor field-effect transistor(SiC MOSFET) degradation defect ionization radiation damage

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Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation

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Chinese Physics B 2023年第2期32卷 525-534页

作者：张鸿郭红霞雷志锋彭超张战刚陈资文孙常皓何玉娟张凤祁潘霄宇钟向丽欧阳晓平 School of Material Science and Engineering Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China Northwest Institute of Nuclear Technology Xi'an 710024China

Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation fluence of the SiC MOSFET reached 5×10^(6)ion·cm^(-2), the drain–gate channel current increased under 200 V drain voltage, the drain–gate channel current and the drain–source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain–gate channel current and drain–source channel current was found to have drain–gate channel current leakage point and local source metal melt, and the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining with Monte Carlo simulation and TCAD electrothermal simulation, it was found that the initial area of single event burnout might occur at the source–gate corner or the substrate–epitaxial interface, electric field and current density both affected the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain–source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain–gate channel damage.

关键词： heavy ion silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFET) drain–gate channel drain–source channel single event burnout TCAD simulation

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Electronic system life prediction algorithm based on the physical of failure 15

Electronic system life prediction algorithm based on the phy...

引用

15th IEEE Global reliability and Prognostics and Health Management Conference, PHM-Beijing 2024

作者： Wang, Yanfang Chen, Ying Science and Technology on Reliability and Environmental Engineering Laboratory Beihang University Beijing China

ISBN: (纸本)9798350354010

Enhancing the availability and safety of electronic systems necessitates a comprehensive investigation into their reliability. This study proposes an electronic system life prediction algorithm based on the physics of failure. For commonly used components, both failure physical models and degradation physical models are presented. An improved binary decision diagram (BDD) is constructed, accompanied by the development of a model-solving algorithm. Ultimately, the proposed methodology is applied to the driver circuit board of an electronic controller as a specific case study, thereby demonstrating its effectiveness and validity. © 2024 IEEE.

关键词： Boolean functions

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0.58 mΩs·cm2/523 v GaN Vertical Schottky Barrier Diode with 15.6 kA/cm2Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

IEEE Electron Device Letters

引用

IEEE Electron Device Letters 2024年第6期45卷 964-967页

作者： Qi, Wei Zhou, Feng Ma, Teng Xu, Weizong Zhou, Dong Ren, Fangfang Chen, Dunjun Zhang, Rong Zheng, Youdou Lu, Hai Nanjing University School of Electronic Science and Engineering Nanjing210093 China China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou511370 China

Achieving high-performance fully-vertical GaN devices on low-cost and large-scale foreign substrates are highly attractive for the development of device technology. In this work, by performing pulsed laser lift-off and laser annealing techniques, high-performance fully-vertical GaN Schottky barrier diodes (SBDs) with superior N-face ohmic contact characteristics are demonstrated. The resulting device exhibits low specific contact resistivity of 3.51×10-5Ω · cm2 and differential specific on-resistance of 0.58 mΩ· cm2, as well as intact anode Schottky contact. In particular, this device demonstrates robust electrothermal robustness, such as the largest surge current density of 15.6 kA/cm2 to date. Moreover, by implementing N-implanted termination, the breakdown voltage of the device is remarkably enhanced from 240 to 523 V, which is competitive with the state-of-the-art quasi-vertical SBDs. These results reveal the notable potential of pulsed laser lift-off/annealing combined with N-implanted termination for realizing fully-vertical devices. © 1980-2012 IEEE.

关键词： Anodes

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Electromagnetically-induced-absorption-like ground state cooling in a hybrid optomechanical system

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Chinese Physics B 2025年第4期34卷 413-421页

作者： Yaoyong Dong Xuejun Zheng Denglong Wang Peng Zhao School of Electromechanical Engineering Guangdong University of TechnologyGuangzhou 510003China School of Mechanical Engineering and Mechanics Xiangtan UniversityXiangtan 411105China School of Physics and Optoelectronics Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China

We present a scheme for the electromagnetically-induced-absorption(EIA)-like ground state cooling in a hybrid optomechanical system which is combined by two-level quantum systems(qubits)and a high-Q optomechanical *** the weak qubit-cavity coupling,the system exhibits an EIA-like effect and this effect is caused by quantum destructive interference that is distinct from the conventional EIA effect driven by quantum constructive *** importantly,the EIA-like cooling mechanism can significantly enhance the cooling rate of the hybrid system,enabling the final phonon number beyond the classical cooling limit in the strong optomechanical coupling ***,the cooling effects of the EIA case is better than that of the normalmode splitting case under the same optomechanical coupling strength and qubit dissipation rate.

关键词： electromagnetically induced absorption ground state cooling optomechanics

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IC-LOGO: A Custom Dataset and Benchmark for Integrated Circuit Logo Detection Task 6

IC-LOGO: A Custom Dataset and Benchmark for Integrated Circu...

引用

6th International Conference on Artificial Intelligence and Computer Applications, ICAICA 2024

作者： Zhao, Yue Luo, Jun Wang, Zhizhe Zhang, Qiuzhen China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9798350377255

In order to enable computers to automatically detect the logo information of Integrated Circuit (IC) images and assist users in searching for the required IC manufacturer information based on the logo images, this article conducted research and analysis on the existing public datasets in the field of logo detection, and found that the existing public datasets cannot meet the specific research and application needs of this article. Therefore, the Integrated Circuit Logo (IC-LOGO) image dataset is presented in this article. The dataset contains 971 internal logo images from 17 manufacturers and 2091 external logo images from 30 manufacturers. Furthermore, the logo images were precisely positioned and annotated. Finally, a benchmark containing 8 different object detection networks was used to test the IC-LOGO dataset. The results show that all detectors trained on the dataset could detect the region and category of LOGO precisely and robustly. © 2024 IEEE.

关键词： Image annotation

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Discussion on the reliability Work of Future Combat Aircraft under Aircraft/Engine Integrated Design 14

Discussion on the Reliability Work of Future Combat Aircraft...

引用

14th International Conference on reliability, Maintainability and Safety, ICRMS 2023

作者： Ding, Yu Li, Tianhao Institute of Reliability Engineering Beihang University Science and Technology The Reliability and Environmental Engineering Laboratory China Beijing China

ISBN: (纸本)9798350329988

Traditional independent methods of aircraft and engine design can no longer meet the mission requirements of future aircraft, including high maneuverability, high energy, large airspace, and wide speed range. To achieve optimal matching between aircraft and engine and promote full play to the maximum performance potential of aircraft and engines, aircraft-engine integration designs are essential. Therefore, considering the highly coupled structure, complex control logic, and dramatic increase in energy and heat dissipation requirements under the integration design to ensure a high mission success rate, corresponding reliability analysis work and reliability level improvement of the whole aircraft are necessary. In this paper, the characteristics of work, structure, environment, and other aspects of aircraft-engine integrated design are initially considered, and the steps to conduct reliability work are discussed. © 2023 IEEE.

关键词： reliability analysis

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