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International Conference on vacuum Electronics

作者： Lei Guo Chunke Shi Yilei He Duoshu Wang Science and Technology on Vacuum Technology and Physics Laboratory Lanzhou Institute of Physics Lanzhou China

The trajectory of electrons in magnesium oxide was simulated based on Dekker model, and the calculation model of the SEY was established according to the motion law of electrons in magnesium oxide. The influence law of different film thickness on the SEY was calculated and analyzed. The simulation results show that the maximum SEY of magnesium oxide is between 12.0-12.5 at the incident electron energy between 800eV and 1000eV. The SEY reaches its maximum at the thickness of film about 70-90nm. The variation trend of the simulation results and the experimental data is basically the same. The experimental test results show that the maximum SEY is about 9.5-10.2 at the incident electron energy between 400eV and 600eV. The maximum SEY is obtained at the thickness of film about 55-70nm. The above results can provide guidance for the preparation of high SEY magnesium oxide film.

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The development of a miniature double focusing mass spectrometer

The development of a miniature double focusing mass spectrom...

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International Conference on vacuum Electronics

作者： Zhe Yang Detian Li Zhengyi Ren Meiru Guo Jian Geng Yongjun Cheng Science and Technology on Vacuum Technology and Physics Laboratory Lanzhou Institute of Physics Lanzhou China

In this paper, a developed miniature Mattauch-Herzog mass spectrometer for space exploration is introduced. The instrument is mainly composed of electron ionization source, electrostatic and magnetic analyzer, focal plane detector, which ionizes substances and measures the intensities of various ion spectral peaks. The $\boldsymbol{90}^{\circ}$ magnetic analyzer with asymmetric structure is employed where the magnetic flux density is 0.25T. According to the experiment, the width of H 2 at 50% peak height (FWHM) is 0.0875amu which is less than 0.1amu, that is to say, the resolution capability of the instrument meets the design requirements. Besides, the sensitivity of H 2 is $\boldsymbol{3.298\times 10^{5}}\mathbf{V}/\mathbf{Pa}$ and the minimum detectable partial pressure of H 2 is $\boldsymbol{3.153 \times 10^{-7}}\mathbf{Pa}$ .

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Combination of S…N and S…Cl Noncovalently Conformational Locks for Constructing High-Planarity and Low-Cost Nonfused-Ring Electron Acceptors

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Chinese Journal of Chemistry 2023年第15期41卷 1797-1802页

作者： Ziyang Han Congqi Li Xiaobin Gu Xiao Han Sixuan Wang Yanan Wei Jinhua Gao Zhixiang Wei Yunhao Cai Xin Zhang Hui Huang College of Materials Science and Opto-Electronic Technology&Center of Materials Science and Optoelectronics Engineering&CAS Center for Excellence in Topological Quantum Computation&CAS Key Laboratory of Vacuum Physics University of Chinese Academy of SciencesBeijing 100049China Center for Excellence in Nanoscience(CAS)&Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS) National Center for Nanoscience and TechnologyBeijing 100190China

Comprehensive Summary By employing thiazole and 4-chlorothiazole as the A′units,two A-D-A′-D-A type nonfused-ring electron acceptors(NFREAs)Tz-H and Tz-Cl were designed and *** thiazole in Tz-H with 4-chlorothiazole can not only remarkably shorten the synthetic route through C—H direct arylation but also enhance molecular planarity with the simultaneous incorporation of S…N and S…Cl noncovalently conformational locks(NoCLs).The photovoltaic devices based on PM6:Tz-Cl exhibited a power conversion efficiency as high as 11.10%,much higher than that of PM6:Tz-H(6.41%),mainly due to more efficient exciton dissociation,better and more balanced carrier mobility,less charge recombination,and more favorable *** findings demonstrate the great potential of NoCLs in achieving low-cost and high-performance NFREAs.

关键词： Organic solar cells Nonfused-ring electron acceptors Noncovalently conformational locks High-planarity and low-cost acceptors 4-Chlorothiazole

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Research on high-resolution displacement detection technology in space

Research on high-resolution displacement detection technolog...

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International Conference on vacuum Electronics

作者： Hengtong Xu Detian Li Jungang Lei Wenze Tao Yunpeng Li Science and Technology on Vacuum Technology and Physics Laboratory Lanzhou Institute of Physics Lanzhou China

In this paper, we introduce a developed high-precision displacement detector in space. It consists of two main parts, a capacitive type sensor and a displacement detection circuit system. Among them, the displacement detection circuit system consists of three main parts: the carrier signal source, the high-precision displacement detector, and the external power supply of the detector. The results show that the gain of the displacement detector is $7.129\times 10^{5}V/m$ , and the resolution of the displacement can reach $6.84\times 10^{-12}m/Hz^{0.5}$ at low frequency and 2. $74\times 10^{-12}m/Hz^{0.5}at$ high frequency in the range of $5mHz\sim 1Hz$ .

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Study on Temperature Characteristics of Capacitance Diaphragm Gauge

Study on Temperature Characteristics of Capacitance Diaphrag...

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International Conference on vacuum Electronics

作者： Chengyao Wu Yongjun Cheng Wenjun Sun Xiaoqiang Pei Qihao Yang Xin Ran Science and Technology on Vacuum Technology and Physics Laboratory Lanzhou Institute of Physics Lanzhou China

Capacitance Diaphragm Gauge (CDG) is a type of sensor commonly used under low vacuum with high accuracy and stability. Temperature is one of the most important factors affecting its measurement accuracy. When the ambient temperature changes, the measurement results of CDGs will also drift accordingly. We experimented with the effect of temperature on CDGs and quantified the measurement errors of heated and unheated CDGs in the environment of $\mathbf{(-30\sim50)} ^{\circ} \mathbf{C}$ . The error caused by the temperature for the unheated CDG is relatively large. The temperature-pressure error surface we proposed in this paper can effectively reduce the measurement error of the unheated CDG and improve its accuracy.

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Design insights into (FA)2BiCuI6 based double perovskite solar cells employing different charge transport layers

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Optical and Quantum Electronics 2024年第10期56卷 1-22页

作者： Yadav, Shivangi Lohia, Pooja Sahu, Anupam Dwivedi, D.K. Department of Electronics and Communication Engineering Madan Mohan Malaviya University of Technology Gorakhpur273010 India Department of Physics and Material Science Photonics and Photovoltaic Research Lab Madan Mohan Malviya University of Technology Gorakhpur273010 India

The non-toxic and organic–inorganic double perovskite material (FA)2BiCuI6, has garnered significant curiosity as a double perovskites solar cell (DPSC) absorber layer owing to its exceptional optoelectronic characteristics, making it well-suited for photovoltaic (PV) applications. To assess the viability of (FA)2BiCuI6 as a prospective material for the solar cell absorption layer, the SCAPS-1D simulation tool is used to explore the optimal configuration of solar cell involving the different electron transport layer (ETL) and hole transport layer (HTL). ETLs such as PCBM, Ag2S, ZnO0.3S0.7, C60, Nb2O5, and ZnSe, along with HTLs like Mg-CuCrO2, CBTS, CFTS, GO, SWCNT, and CuI, are thoroughly considered for integration with the absorber layer. Each ETL is methodically examined in combination with each HTL to identify the optimal pairing with (FA)2BiCuI6. This analysis leads to the identification of a champion DPSC configuration, which is then further optimized to achieve higher efficiency. The champion device structured as FTO/Nb2O5/(FA)2BiCuI6/Mg-CuCrO2/Se demonstrates highest power conversion efficiency approximately 24.42%, open-circuit voltage = 1.077 V, short-circuit current density = 26.03 mA/cm2 and fill factor of 87.12% are observed after optimization of various solar cell parameters. This proposed configuration aims to optimize light absorption, charge carrier transport, and extraction efficiency to achieve high solar cell performance. This work proposes the most suitable DPSC configurations for PV applications, analysing on the basis of variables such as absorber layer thickness, shallow acceptor density, defect density, and interfacial defect density. Additionally, the investigation delves into the influence of series and shunt resistances on proposed DPSC structures. To gain deeper insights, the analysis incorporates JV curves and quantum efficiency plots for the proposed champion configuration. Device performance is stable with temperature at 300 K. © The A

关键词： Perovskite

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Enhancing thermoelectric performance of p-type SnTe through manipulating energy band structures and decreasing electronic thermal conductivity

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Rare Metals 2024年第7期43卷 3232-3241页

作者： Xin Qian Hao-Ran Guo Jia-Xin Lyu Bang-Fu Ding Xing-Yuan San Xiao Zhang Jiang-Long Wang Shu-Fang Wang Hebei Key Lab of Optic-Electronic Information and Materials College of Physics Science and TechnologyHebei UniversityBaoding 071002China College of Electron and Information Engineering Hebei UniversityBaoding 071002China Research Institute for Frontier Science Beihang UniversityBeijing100191China

SnTe has received considerable attention as an environmentally friendly alternative to the representative thermoelectric material of ***,excessive hole carrier concentration in SnTe results in an extremely low Seebeck coefficient and high thermal conductivity,which makes it exhibit relatively inferior thermoelectric *** this work,the thermoelectric performance of p-type SnTe is enhanced through regulating its energy band structures and reducing its electronic thermal conductivity by combining Bi doping with CdSe ***,the carrier concentration of SnTe is successfully suppressed via Bi doping,which significantly decreases the electronic thermal ***,the convergence and flattening of the valence bands by alloying CdSe effectively improves the effective mass of SnTe while restraining its carrier ***,a maximum figure of merit(ZT) of~ 0.87 at 823 K and an average ZT of~ 0.51 at 300-823 K have been achieved in Sn_(0.96)Bi_(0.04)Te-5%*** results indicate that decreasing the electronic thermal conductivity is an effective means of improving the performance of thermoelectric materials with a high carrier concentration.

关键词： Thermoelectric materials SnTe Energy band structure Electronic thermal conductivity ZT value

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A field emission performance testing device with adjustable electrode spacing

A field emission performance testing device with adjustable ...

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International Conference on vacuum Electronics

作者： Xiaoqiang Pei Yongjun Cheng Wenjun Sun Chengyao Wu Dong Ding Science and Technology on Vacuum Technology and Physics Laboratory Lanzhou Institute of Physics Lanzhou China

This work presents a device that can adjust electrode spacing inside a vacuum system to evaluate the field emission characteristics of the carbon nanotube array cathode grown on a stainless steel substrate. It was made by coaxial connection of the rear end of a screw micrometer, which acts as the anode, with a stepper motor. The distance between the anode and the cathode was controlled by altering the pitch of the stepper motor with an angle precision of 1 degree. Therefore, the electrode separation can be tuned in the range of 0∼15mm, at 1.388 μm incremental steps. Comparing with devices with a fixed electrode spacing, the advantage is that this device allows continuous regulation of the electrode spacing after it is placed in a vacuum system to test the emission properties under various electrical parameters in one process thus avoiding repeated breaking of the vacuum environment. Therefore, test efficiency is improved, hence saving manpower, material resources, testing time and greatly reducing the cost of experimentation. This device is simple in structure and relatively easy to prepare0

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Experimental evidence of surface copper boride

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Nano Research 2023年第7期16卷 9602-9607页

作者： Xiao-Ji Weng Jie Bai Jingyu Hou Yi Zhu Li Wang Penghui Li Anmin Nie Bo Xu Xiang-Feng Zhou Yongjun Tian Center for High Pressure Science State Key Laboratory of Metastable Materials Science and TechnologySchool of ScienceYanshan UniversityQinhuangdao 066004China Key Laboratory of Weak-Light Nonlinear Photonics and School of Physics Nankai UniversityTianjin 300071China Vacuum Interconnected Nanotech Workstation Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China

To validate the crystal structure and elucidate the formation mechanism of the unexpected surface copper boride,a systematic scanning tunneling microscope,X-ray photoelectron spectroscopy,angle-resolved photoemission spectroscopy,and aberrationcorrected scanning transmission electron microscopy investigations were conducted to confirm the structure of copper-rich boride Cu_(8)B_(14)after depositing boron on single-crystal Cu(111)surface under ultrahigh ***-principles calculations with defective surface models further indicate that boron atoms tend to react with Cu atoms near terrace edges or defects,which in turn shapes the intermediate structures of copper boride and leads to the formation of stable Cu-B monolayer via large-scale surface reconstruction eventually.

关键词： copper boride surface science ultrahigh vacuum structure characterization first principles formation mechanism

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Enhanced Coupling of Superconductivity and Evolution of the Gap Structure in CsV_(3)Sb_(5)via Ta Doping

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Chinese physics Letters 2024年第12期41卷 121-128页

作者： Yiwen Li Zhengyan Zhu Qing Li Yongze Ye Zhiwei Wang Yugui Yao Hai-Hu Wen National Laboratory of Solid State Microstructures and Department of Physics Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement Ministry of EducationSchool of PhysicsBeijing Institute of TechnologyBeijing 100081China Micronano Center Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic SystemsBeijing Institute of TechnologyBeijing 100081China Material Science Center Yangtze Delta Region Academy of Beijing Institute of TechnologyJiaxing 314011China

In this study,Kagome superconductors,i.e.,CsV_(3)Sb_(5)single crystals and its Ta-doped variant,Cs(V_(0.86)Ta_(0.14))_(3)Sb_(5),were studied in detail via specific heat *** revealed that the charge density wave(CDW)was suppressed and the superconducting transition temperature(Tc)considerably increased from 2.8 to 4.6K upon Ta *** electronic specific heat of CsV_(3)Sb_(5)was fitted with a model comprising an s-wave gap and a highly anisotropic extended s-wave gap,where 2Δ/kBTc was smaller than the weak coupling limit of ***(V_(0.86)Ta_(0.14))_(3)Sb_(5) exhibited two isotropic s-wave gaps and yielded a larger gap of 2Δ/kBTc=5.04,indicating a significant enhancement in superconducting *** evolution was attributed to the increased density of states near the Fermi level released by CDW gap *** findings demonstrated that Ta doping enhanced superconducting coupling and variation of gap structure in CsV_(3)Sb_(5).

关键词： doping coupling fitted

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