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Giant excitonic upconverted emission from two-dimensional semiconductor in doubly resonant plasmonic nanocavity

Light(science & Applications) 2022年第7期11卷 1523-1534页

作者： Pengfei Qi Yuchen Dai Yang Luo Guangyi Tao Liheng Zheng Donglin Liu Tianhao Zhang Jiadong Zhou Bo Shen Feng Lin Zheng Liu Zheyu Fang School of Physics State Key Laboratory for Mesoscopic PhysicsAcademy for Advanced Interdisciplinary StudiesCollaborative Innovation Center of Quantum MatterNano-optoelectronics Frontier Center of Ministry of EducationPeking UniversityBeijing 100871China Institute of Modern Optics Nankai UniversityTianjin Key Laboratory of Micro-scale Optical Information Science and TechnologyTianjin 300350China Photonics Research Center School of PhysicsMOE Key Lab of Weak-Light Nonlinear Photonicsand Tianjin Key Lab of Photonics Materials and Technology for Information ScienceNankai UniversityTianjin 300071China School of Electrical and Electronic Engineering Nanyang Technological UniversitySingapore 639798Singapore

Phonon-assisted upconverted emission is the heart of energy harvesting,bioimaging,optical cryptography,and optical *** has been demonstrated that emerging two-dimensional(2D)semiconductors can provide an excellent platform for efficient phonon-assisted upconversion due to the enhanced optical transition strength and phonon-exciton interaction of 2D ***,there is little research on the further enhancement of excitonic upconverted emission in 2D ***,we report the enhanced multiphoton upconverted emission of 2D excitons in doubly resonant plasmonic *** to the enhanced light collection,enhanced excitation rate,and quantum efficiency enhancement arising from the Purcell effect,an upconverted emission amplification of>1000-fold and a decrease of 2~3 orders of magnitude in the saturated excitation power are *** findings pave the way for the development of excitonic upconversion lasing,nanoscopic thermometry,and sensing,revealing the possibility of optical refrigeration in future 2D electronic or excitonic devices.

关键词： converted resonant doubly

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Highly sensitive flexible strain sensor based on the two-dimensional semiconductor tellurium with a negative gauge factor

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science China(Information sciences) 2024年第7期67卷 295-304页

作者： Jiarui HE Yusong QU Shengyao CHEN Cong WANG Lena DU Xiaoshan DU Yuanyuan ZHENG Guozhong ZHAO He TIAN College of Mathematics and Physics Beijing University of Chemical Technology School of Integrated Circuits Tsinghua University Beijing China & The Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology &University of Chinese Academy of Sciences Beijing Key Lab of Terahertz Spectroscopy and Imaging Key Lab of Terahertz OptoelectronicsMinistry of Education Department of Physics Capital Normal University

Research on flexible strain sensors has advanced rapidly in recent years, with particular attention being devoted to two-dimensional(2D) semiconductor materials owing to their exceptional mechanical and electrical properties that are conducive to sophisticated sensing performance. However, resistive strain sensors based on 2D semiconductor materials typically exhibit positive gauge factors(GF), while materials for strain sensors with a negative GF remain elusive. We have identified a trend of reduction in the band gap of the emerging 2D semiconductor material tellurium(Te) under strain in simulations reported in past research,and have observed a negative GF in the Te-based strain sensor. In this study, we combined Te with a flexible polyethylene terephthalate(PET) substrate to manufacture a flexible strain sensor with a significantly negative GF. The results of tests revealed that the Te-based strain sensor achieved an impressive maximum sensitivity of-139.7 within a small range of bending-induced strain(< 1%). Furthermore, it exhibited excellent linearity and good cyclic stability, and was successfully applied to monitor limb movements. The work here verifies the significant potential for the use of Te-based strain sensors in next-generation flexible electronics.

关键词： 2D semiconductor materials 2D tellurium flexible electronics strain sensors negative gauge factor high sensitivity

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Shortcuts to adiabatic state transfer in time-modulated two-level non-Hermitian systems

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Physical Review A 2025年第2期111卷 022410-022410页

作者： Qi-Cheng Wu Jun-Long Zhao Yan-Hui Zhou Biao-Liang Ye Yu-Liang Fang Zheng-Wei Zhou Chui-Ping Yang Quantum Information Research Center and Jiangxi Province Key Laboratory of Applied Optical Technology Shangrao Normal University Shangrao 334001 China CAS Key Lab of Quantum Information University of Science and Technology of China Hefei 230026 China Anhui Center for Fundamental Sciences in Theoretical Physics University of Science and Technology of China Hefei 230026 China Hefei National Laboratory University of Science and Technology of China Hefei 230088 China School of Physics Hangzhou Normal University Hangzhou 311121 China

Nontrivial spectral properties of non-Hermitian systems can give rise to intriguing effects that lack counterparts in Hermitian systems. For instance, when dynamically varying system parameters along a path enclosing an exceptional point (EP), chiral mode conversion occurs. A recent study [Phys. Rev. Lett. 133, 113802 (2024)] demonstrates the achievability of pure adiabatic state transfer by specifically selecting a trajectory in the system parameter space where the corresponding evolution operator exhibits a real spectrum while winding around an EP. However, the intended adiabatic state transfer becomes fragile when taking into account the effect of the nonadiabatic transition. In this work, we propose a scheme for achieving robust and rapid adiabatic state transfer in time-modulated two-level non-Hermitian systems by appropriately modulating the system Hamiltonian and time-evolution trajectory. Numerical simulations confirm that a complete adiabatic transfer can always be achieved even under nonadiabatic conditions after one period for different initialized adiabatic states, and the scheme remains insensitive to moderate fluctuations in control parameters. Therefore, this scheme offers alternative approaches for quantum-state engineering in non-Hermitian systems.

关键词： Hamiltonians

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Recent advances in paired electrolysis coupling CO_(2) reduction with alternative oxidation reactions

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Journal of Energy Chemistry 2023年第2期77卷 406-419,I0011页

作者： Deng Li Jiangfan Yang Juhong Lian Junqing Yan Shengzhong(Frank) Liu Key Laboratory of Applied Surface and Colloid Chemistry Shaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi’an 710119ShaanxiChina College of Chemistry and Materials Science Weinan Normal UniversityWeinan 714099ShaanxiChina Dalian National Laboratory for Clean Energy Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian 116023LiaoningChina

Electrocatalytic CO_(2) reduction reaction(CO_(2)RR)holds great promise in green energy conversion and ***,for current CO_(2) electrolyzers that rely on the oxygen evolution reaction,a large portion of the input energy is"wasted"at the anode due to the high overpotential requirement and the recovery of low-value *** make efficient use of the electricity during electrolysis,coupling CO_(2)RR with anodic alternatives that have low energy demands and/or profitable returns with high-value products is then ***,we review the latest advances in paired systems for simultaneous CO_(2) reduction and anode *** start with the cases integrating CO_(2)RR with concurrent alternative oxidation,such as inorganic oxidation using chloride,sulfide,ammonia and urea,and organic oxidation using alcohols,aldehydes and primary *** paired systems that couple CO_(2)RR with on-site oxidative upgrading of CO_(2)-reduced chemicals are also *** coupling mechanism,electrochemical performance and economic viability of these co-electrolysis systems are ***,we then point out the mismatch issues between the cathodic and anodic reactions regrading catalyst ability,electrolyte solution and reactant supply that will challenge the applications of these paired electrolysis *** to address these issues are further proposed,providing some guidance for future research.

关键词： Electrolysis Coupling Reaction CO_(2)Utilization Co-Valorization

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Roles of concentration-dependent Cu doping behaviors on the thermoelectric properties of n-type Mg_(3)Sb_(1.5)Bi_(0.5)

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Journal of Materiomics 2024年第1期10卷 154-162页

作者： Xinxin Yang Heng Ni Xiaotong Yu Biao Cao Juanjuan Xing Qiyong Chen Lili Xi Jiandang Liu Jiye Zhang Kai Guo Jing-Tai Zhao School of Materials Science and Engineering Shanghai University99 Shangda RoadShanghai200444China Materials Genome Institute Shanghai University99 Shangda RoadShanghai200444China State Key Laboratory of Particle Detection and Electronics University of Science and Technology of ChinaHefeiAnhui230026China School of Physics and Materials Science Guangzhou UniversityGuangzhou510006China Research Center for Advanced Information Materials(CAIM) Huangpu Research&Graduate School of Guangzhou UniversitySino-Singapore Guangzhou Knowledge CityHuangpu DistrictGuangzhou510555China Key Lab of Si-based Information Materials&Devices and Integrated Circuits Design Department of Education of Guangdong ProvinceChina School of Materials Science and Engineering Guilin University of Electronic TechnologyGuilin541004China Guangxi Key Laboratory of Information Materials Guilin University of Electronic TechnologyGuilin541004China

Large Seebeck coefficients induced by high degeneracy of conduction band minimum,and low intrinsic lattice thermal conductivity originated from large lattice vibrational anharmonicity render Mg_(3)Sb_(2)as a promising n-type thermoelectric ***,we demonstrated unique concentration-dependent occupation behaviors of Cu in Mg_(3.4)Sb_(1.5)Bi_(0.49)Te_(0.01)matrix,evidenced by structural characterization and transport property *** is found that Cu atoms prefer to enter the interstitial lattice sites in Mg_(3)Sb_(2)host with low doping level(Mg_(3.4)Sb_(1.5)Bi_(0.49)Te_(0.01)+x%Cu,x<0.3%),acting as donors for providing additional electrons without deteriorating the carrier *** x is larger than 0.3%,the excessive Cu atoms are inclined to substitute Mg atoms,yielding acceptors to decrease the electron *** a result,the electrical conductivity of the Mg_(3.4)Sb_(1.5)Bi_(0.49)Te_(0.01)+0.3%Cu sample reaches 2.3×10^(4)S/m at 300 K,increasing by 300%compared with that of the pristine *** figure of merit zT values in the whole measured temperature range are significantly improved by the synergetic improvement of power factor and reduction of thermal *** average zT∼1.07 from 323 K to 773 K has been achieved for the Mg_(3.4)Sb_(1.5)Bi_(0.49)Te_(0.01)+0.3%Cu sample,which is about 30%higher than that of the Mg_(3.4)Sb_(1.5)Bi_(0.49)Te_(0.01) sample.

关键词： Mg_(3)Sb_(2) Cu doping Concentration-dependent occupation Thermoelectric properties Average zT

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Recent progress on surface chemistryⅠ:Assembly and reaction

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Chinese Chemical Letters 2024年第12期35卷 43-94页

作者： Xin Li Zhen Xu Donglei Bu Jinming Cai Huamei Chen Qi Chen Ting Chen Fang Cheng Lifeng Chi Wenjie Dong Zhenchao Dong Shixuan Du Qitang Fan Xing Fan Qiang Fu Song Gao Jing Guo Weijun Guo Yang He Shimin Hou Ying Jiang Huihui Kong Baojun Li Dengyuan Li Jie Li Qing Li Ruoning Li Shuying Li Yuxuan Lin Mengxi Liu Peinian Liu Yanyan Liu Jingtao Lü Chuanxu Ma Haoyang Pan JinLiang Pan Minghu Pan Xiaohui Qiu Ziyong Shen Shijing Tan Bing Wang Dong Wang Li Wang Lili Wang Tao Wang Xiang Wang Xingyue Wang Xueyan Wang Yansong Wang Yu Wang Kai Wu Wei Xu Na Xue Linghao Yan Fan Yang Zhiyong Yang Chi Zhang Xue Zhang Yang Zhang Yao Zhang Xiong Zhou Junfa Zhu Yajie Zhang Feixue Gao Yongfeng Wang Center for Carbon-based Electronics and Key Laboratory for the Physics and Chemistry of Nanodevices School of ElectronicsPeking UniversityBeijing 100871China Spin-X Institute School of MicroelectronicsSouth China University of TechnologyGuangzhou 511442China School of Materials and Energy Guangzhou Key Laboratory of Low-Dimensional Materials and Energy Storage DevicesGuangdong University of TechnologyGuangzhou 510006China Faculty of Materials Science and Engineering Kunming University of Science and TechnologyKunming 650093 China i-Lab CAS Key Laboratory of Nanophotonic Materials and DevicesSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China CAS Key Laboratory of Molecular Nanostructure and Nanotechnology CAS Research/Education Center for Excellence in Molecular SciencesBeijing National Laboratory for Molecular Sciences(BNLMS)Institute of ChemistryChinese Academy of SciencesBeijing 100190China State Key Laboratory for Organic Electronics and Information Displays&Jiangsu Key Laboratory for Biosensors Institute of Advanced MaterialsJiangsu National Synergetic Innovation Center for Advanced MaterialsNanjing University of Posts and TelecommunicationsNanjing 210023China Institute of Functional Nano and Soft Materials(FUNSOM) Jiangsu Key Laboratory for Carbon-Based Functional Materials and DevicesSoochow UniversitySuzhou 215123China Hefei National Research Center for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of ChinaHefei 230026China Institute of Physics&University of Chinese Academy of Sciences Beijing 100190China State Key Laboratory of Catalysis Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian 116023China College of Chemistry Beijing Normal UniversityBeijing 100875China Beijing National Laboratory for Molecular Sciences(BNLMS) College of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China School

Surface chemistry focuses on the investigation of the adsorption,migration,assembly,activation,reaction,and desorption of atoms and molecules at *** chemistry plays the pivotal roles in both fundamental science and applied *** review will summarize the recent progresses on surface assembly,synthesis and catalysis investigated mainly by scanning tunneling microscopy and atomic force *** assemblies of water and small biomolecules,construction of Sierpin′ski triangles and surface chirality are ***-surface synthesis of conjugated carbo-and heterocycles and other kinds of carbon nanostructures are *** model catalysis,including single-atom catalysis and electrochemical catalysis,are discussed at the single-atom level.

关键词： Surface chemistry Assembly Surface synthesis Catalysis on surface Surface electrochemical processes

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Improved performance of CdSe/ZnS quantum dot light-emitting diodes through doping with small molecule CBP

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Optoelectronics Letters 2021年第11期17卷 656-660页

作者： LIN Yuhan HUANG Ye ZHU Qianpeng ZHANG Genggeng HU Junta National Engineering Lab of Special Display Technology' State Key Lab of Advanced Display TechnologyAcademy of Opto-Electronic Technology'Hefei University of TechnologyHefei 230009China School of Electronic Science and Applied Physics Hefei University of TechnologyHefei 230009China School of Instrument Science and Opto-electronics Engineering Hefei University of TechnologyHefei 230009China

The poor film formation of Cd Se/Zn S quantum dots(QDs) during spin-coating makes a substantial impact on the device performance of quantum dot light-emitting diodes(QLEDs). This work proposes a method to improve the morphology of the quantum dot light-emitting layer(EML) by adding small organic molecular 4,4'-Bis(9 H-carbazol-9-yl) biphenyl(CBP) into the layer. Its surface roughness reduces from 6.21 nm to 2.71 nm, which guarantees a good contact between hole transport layer(HTL) and EML. Consequently, the Cd Se/Zn S QDs:CBP based QLED achieves maximum external quantum efficiency(EQE) of 5.86%, and maximum brightness of 10 363 cd/m^(2). It is demonstrated that the additive of small organic molecules could be an effective way to improve the brightness and the efficiency of QLEDs.

关键词： QDs Improved performance of CdSe/ZnS quantum dot light-emitting diodes through doping with small molecule CBP ZnS

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High yield growth of centimeter-sized black phosphorus single crystal thin flakes through bidirectional vapor transport

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science China Materials 2025年第1期68卷 217-225页

作者： Siyuan Wang Cheng Chen Yaning Liang Xingang Hou Xiangyi Wang Zhuo Dong Junyong Wang Chao Jiang Kai Zhang Key Laboratory of Semiconductor Display Materials and Chips&i-Lab Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China School of Nano Science and Technology University of Science and Technology of ChinaSuzhou 215123China MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing and Department of Applied PhysicsNanjing University of Science and TechnologyNanjing 210094China School of Materials Science and Engineering Shanghai UniversityShanghai 200444China CAS Key Laboratory of Standardization and Measurement for Nanotechnology National Center for Nanoscience and TechnologyBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China

Black phosphorus(BP)has been regarded as a promising two-dimensional semiconductor due to its excellent properties including high carrier mobility and widely tunable direct *** extensive interest as well as research progress,the preparation of large-size and high-quality BP single crystal in high throughput still remains ***,a facile growth of centimeter-sized BP single crystal flakes with dozens of throughput per batch is achieved by using bidirectional vapor transport(BVT)*** crystal quality is confirmed by structural and spectrum characterizations,with an X-ray diffraction rocking curve peak half-height width of only 0.02°.The as-grown BP single crystal flake with smooth cleavage plane can be easily exfoliated into large scale ***-effect transistors fabricated based on the BP by such approach show excellent performance including reliable carrier mobility up to 1150 cm^(2) V^(−1) s^(−1) and on/off current ratio of~10^(6)at 15 *** approach is also applicable to various doped-BP,such as As-BP,Se-BP,Te-BP,*** ability to grow centimeter-sized BP single crystal flakes in high yield will accelerate the research and applications of BP-based electronics and optoelectronics.

关键词： black phosphorus single crystal chemical vapor transport two-dimensional materials field-effect transistors

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Composition and luminescence properties of highly robust green-emitting LuAG:Ce/Al_(2)O_(3)composite phosphor ceramics for high-power solid-state lighting

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Journal of Advanced Ceramics 2023年第3期12卷 625-633页

作者： Ziqiu Cheng Xin Liu Xinrong Chen Jian Xu Yanbin Wang Tengfei Xie Lexiang Wu Zhengfa Dai Guohong Zhou Jun Zou Jiang Li Transparent Ceramics Research Center Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 201899China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Lab of New Energy Materials and Devices School of Physics and Electronic InformationHenan Polytechnic UniversityJiaozuo 454000China School of Material Science and Engineering Jiangsu University301 Xuefu RoadZhenjiang 212013China Shanghai Institute of Technology Shanghai 201418China Institute of New Materials&Industrial Technology Wenzhou UniversityWenzhou 325024China

The major advantage of laser lighting over white light-emitting-diode is the possibility to achieve ultra-high ***,phosphors usually suffer laser-induced luminescence saturation,which limits the peak luminance of laser lighting *** aim of the present study is to develop LuAG:Ce/Al_(2)O_(3)composite ceramics(LACCs)with a high saturation threshold for high-luminance laser *** to the rigid crystal structure,proper synthetic process,and optimized thermal design,the LACCs possess small thermal quenching(16%loss in luminescence at 225℃),high quantum yield(>95%),and excellent luminescence *** the LACCs are irradiated by blue laser diodes in a reflection mode,a high luminous flux of 4634 lm and luminous efficacy of 283 lm·W^(−1)are ***,they show no sign of luminescence saturation even when the power density reaches 20.5 W·mm^(−2).With these favorable properties,the designed LACCs show great potential in high-luminance laser lighting.

关键词： LuAG:Ce/Al_(2)O_(3)composite ceramics(LACCs) luminescence saturation luminous efficacy high-luminance laser lighting

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低温热循环加速非晶合金剪切带在室温的结构弛豫

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science China Materials 2024年第3期67卷 974-982页

作者：魏玉锋潘杰孙永昊李宁张诚汪卫华柳林 School of Materials Science and Engineering State Key Lab for Materials Processing and Die&Mold TechnologyHuazhong University of Science and TechnologyWuhan 430074China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China Institute of Physics Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China

低温热循环是实现非晶合金结构回春的一种简单有效方法,但某些非晶合金在低温热循环处理后发生弛豫而不是回春.本研究通过在非晶合金中引入剪切带,在同一块样品上获得了不同区域初始能量不同的非晶合金,系统地研究了不同初始状态对低温... 详细信息

低温热循环是实现非晶合金结构回春的一种简单有效方法,但某些非晶合金在低温热循环处理后发生弛豫而不是回春.本研究通过在非晶合金中引入剪切带,在同一块样品上获得了不同区域初始能量不同的非晶合金,系统地研究了不同初始状态对低温热循环处理效果的影响.研究结果发现,在经过低温热循环处理后,同一试样中的剪切带发生结构弛豫,而基体发生结构回春.类似的双向变化趋势还可以从显微硬度、纳米压痕曲线以及压痕形状的变化上得到验证.经历了100次低温热循环处理后,剪切带和基体的焓和硬度均收敛到一个平衡值.低温热循环能够加速剪切带的结构弛豫,实现了在低温热循环的上限温度上做长时间退火所达不到的状态.文中还采用自由体积模型对实验结果进行分析,阐明了非晶合金的初始状态影响其结构演化方向的机理.本研究为低温热循环处理非晶合金提供了新见解,阐明非晶合金初始状态在其焓变方向上的关键作用.

关键词： metallic glasses cryogenic thermal-cycling rejuvenation relaxation energy state

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