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arXiv 2024年

作者： Kundu, Baisali Chakrabarty, Poulomi Dhara, Avijit Rosati, Roberto Samanta, Chandan Chakraborty, Suman K. Sahoo, Srilagna Dhara, Sajal Dash, Saroj P. Malic, Ermin Lodha, Saurabh Sahoo, Prasana K. Quantum Materials and Device Research lab Materials Science Centre Indian Institute of Technology West Bengal Kharagpur India Department of Electrical Engineering Indian Institute of Technology Bombay Mumbai India Department of Physics Indian Institute of Technology West Bengal Kharagpur India Department of Physics Philipps-University at Marburg Marburg Germany Department of Microtechnology and Nanoscience Chalmers University of Technology GöteborgSE-41296 Sweden

Multimodal device operations are essential to advancing the on-chip integration of two-dimensional (2D) semiconductors in electronics, photonics, information and quantum technology. Precise control over carrier dynamics, particularly exciton generation and transport, is crucial for finetuning the functionality of optoelectronic devices based on 2D semiconductor heterostructure. However, the traditional exciton engineering methods in 2D semiconductors are mainly restricted to the artificially assembled vertical p-n heterostructures with electrical or strain-induced confinements. In this study, we utilized bilayer 2D lateral n-p-n multi-junction MoSe2-WSe2-MoSe2 heterostructures with intrinsically spatially separated energy landscapes to achieve preferential exciton generation and manipulation without the need for external confinement. In lateral n-p-n field-effect transistor (FET) geometry, we uncover unique and non-trivial electro-optical properties, including dynamic tuning of channel photoresponsivity from positive to negative. The multimodal operation of these 2D FETs is achieved by carefully adjusting electrical bias and the impinging photon energy, enabling precise control over the trions generation and transport. Cryogenic photoluminescence measurement revealed the presence of trions in bilayer MoSe2 and intrinsic trap states in WSe2, which enhanced the sensitivity of the proposed device to near-infrared photons. Measurements in different FET device geometries show the multi-functionality of 2D lateral heterostructure phototransistors for efficient tuning and electrical manipulation of excitonic characteristics. Our findings pave the way for developing practical exciton-based transistors, sensors, multimodal optoelectronic on-chip and quantum technologies. © 2024, CC BY.

关键词： Heterojunctions

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Fractal and Knot-Free Chromosomes Facilitate Nucleoplasmic Transport

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Physical Review Letters 2022年第3期128卷 038101-038101页

作者： Yeonghoon Kim Ludvig Lizana Jae-Hyung Jeon Department of Physics Pohang University of Science and Technology Pohang 37673 Republic of Korea Integrated Science Lab Department of Physics Umeå University Umeå 90187 Sweden Asia Pacific Center for Theoretical Physics Pohang 37673 Republic of Korea

Chromosomes in the nucleus assemble into hierarchies of 3D domains that, during interphase, share essential features with a knot-free condensed polymer known as the fractal globule (FG). The FG-like chromosome likely affects macromolecular transport, yet its characteristics remain poorly understood. Using computer simulations and scaling analysis, we show that the 3D folding and macromolecular size of the chromosomes determine their transport characteristics. Large-scale subdiffusion occurs at a critical particle size where the network of accessible volumes is critically connected. Condensed chromosomes have connectivity networks akin to simple Bernoulli bond percolation clusters, regardless of the polymer models. However, even if the network structures are similar, the tracer’s walk dimension varies. It turns out that the walk dimension depends on the network topology of the accessible volume and dynamic heterogeneity of the tracer’s hopping rate. We find that the FG structure has a smaller walk dimension than other random geometries, suggesting that the FG-like chromosome structure accelerates macromolecular diffusion and target-search.

关键词： Anomalous diffusion Chromatin Chromosomes Brownian dynamics

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All-Electrical Layer-Spintronics in Altermagnetic Bilayer

arXiv

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arXiv 2024年

作者： Peng, Rui Yang, Jin Hu, Lin Ong, Wee-Liat Ho, Pin Lau, Chit Siong Liu, Junwei Ang, Yee Sin Cluster Singapore University of Technology and Design Singapore487372 Singapore ZJU-UIUC Institute College of Energy Engineering Zhejiang University Haining Zhejiang Jiaxing314400 China School of Physics Beijing Institute of Technology Beijing100081 China Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems School of Physics Beijing Institute of Technology Beijing100081 China Beijing Computational Science Research Center Beijing100193 China Singapore138634 Singapore Department of Physics Hong Kong University of Science and Technology 999077 Hong Kong

Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of spin-polarized current in an altermagnetic bilayer. Such a bilayer system can host layer-spin locking, in which one layer hosts a spin-polarized current while the other layer hosts a current with opposite spin polarization. An out-of-plane electric field breaks the layer degeneracy, leading to a gate-tunable spin-polarized current whose polarization can be fully reversed upon flipping the polarity of the electric field. Using first-principles calculations, we show that CrS bilayer with C-type antiferromagnetic exchange interaction exhibits a hidden layer-spin locking mechanism that enables the spin polarization of the transport current to be electrically manipulated via the layer degree of freedom. We demonstrate that sign-reversible spin polarization as high as 87% can be achieved at room temperature. This work presents the pioneering concept of layer-spintronics which synergizes altermagnetism and bilayer stacking to achieve efficient electrical control of spin. Copyright © 2024, The Authors. All rights reserved.

关键词： Spin polarization

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Mechanical and Dielectric Properties of Si3N4/β-SiAlON Composite Ceramics Fabricated by Vat Photopolymerization 3d Printing technology

SSRN

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SSRN 2024年

作者： Chen, Zihuan Duan, Wenyan Zhao, Chunyang Wang, Xuye Jin, Baojie Hu, Chuanqi Jia, Qingfeng Li, Shan Liu, Bingshan Wang, Gong Zhang, Dongyun Technology and Engineering Centre of Space Utilization Chinese Academy of Sciences Beijing100094 China Institute for Laser Engineering School of Physics and Optoelectronic Engineering Beijing University of Technology Beijing100124 China State Key Lab of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan430070 China School of Materials Science and Engineering University of Science and Technology Beijing Beijing100083 China Chinese Academy of Sciences Beijing100094 China

Vat photopolymerization 3D printing provides a novel approach for preparing broadband wave-transparent Si3N4/β-SiAlON composite ceramics. This paper oxidized raw powder to introduce low dielectric phases (SiO2) and overcome the low curing depth of α-Si3N4. The powder to prepare a high solid content (50 vol%) slurry was firstly oxidized for 1h at 1200 °C then modified by 6wt% dispersant. The selected print thickness of 50 μm was the highest known for Si3N4 vat photopolymerization 3D printing, greatly improving printing efficiency. Finally, the mechanical and dielectric properties of Si3N4/β-SiAlON ceramics at different sintering temperatures were systematically investigated. The composite ceramics sintering at 1780 °C had a maximum bending strength of 236±16 MPa, the real permittivity was 4.83, and the tangent loss lower than 0.03. At 1800 °C the porosity increased resulting in bending strength decreased to 109±4 MPa, the real permittivity to 3.23, and the tangent loss decreased to lower than 0.02. © 2024, The Authors. All rights reserved.

关键词： Nitrogen compounds

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Robustness of quantum many-body scars in the presence of Markovian bath

arXiv

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arXiv 2025年

作者： Jiang, Xiang-Ping Xu, Mingdi Yang, Xuanpu Wang, Yucheng Pan, Lei Zhejiang Lab Hangzhou311121 China School of Physics Nankai University Tianjin300071 China Shenzhen Institute for Quantum Science and Engineering Southern University of Science and Technology Shenzhen518055 China International Quantum Academy Shenzhen518048 China Guangdong Provincial Key Laboratory of Quantum Science and Engineering Southern University of Science and Technology Shenzhen518055 China

A generic closed quantum many-body system will inevitably tend to thermalization, whose local information encoded in the initial state eventually scrambles into the full space, known as quantum ergodicity. A paradigmatic exception in closed quantum systems for strong ergodicity breaking is known as many-body localization, where strong disorder-induced localization prevents the occurrence of thermalization. It is generally recognized that a localized quantum system would be delocalized under dissipation induced by the environment. However, this consequence recently has received challenges where an exotic dissipation-induced localization mechanism is proposed, and transitions between localized and extended phases are found. In this Letter, we promote this mechanism to systems for weak ergodicity breaking hosting quantum many-body scars (QMBS). We find that the system relaxes to a steady state dominated by QMBS, and the dissipative dynamics exhibit dynamic revivals by suitably preparing an initial state. We point out an experimental realization of the controlled dissipation with a cold atomic setup. This makes the signature of ergodicity breaking visible over dissipative dynamics and offers potential possibilities for experimentally preparing stable QMBS with associated coherent dynamics. Copyright © 2025, The Authors. All rights reserved.

关键词： Quantum optics

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Evolution of charge density waves from three-dimensional to quasi-two-dimensional in kagome superconductors Cs(V1−xMx)3Sb5 (M=Nb, Ta)

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Physical Review Materials 2023年第7期7卷 074801-074801页

作者： Qian Xiao Qizhi Li Jinjin Liu Yongkai Li Wei Xia Xiquan Zheng Yanfeng Guo Zhiwei Wang Yingying Peng International Center for Quantum Materials School of Physics Peking University Beijing 100871 China Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology Beijing 100081 China Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems Beijing Institute of Technology Beijing 100081 China Material Science Center Yangtze Delta Region Academy of Beijing Institute of Technology Jiaxing 314011 China School of Physical Science and Technology ShanghaiTech University Shanghai 201210 China ShanghaiTech Laboratory for Topological Physics ShanghaiTech University Shanghai 201210 China Collaborative Innovation Center of Quantum Matter Beijing 100871 China

The kagome material AV3Sb5 (A=K, Rb, Cs) with geometry frustration hosts nontrivial topological electronic structures, electronic nematicity, the charge density wave (CDW), and superconductivity, providing an ideal platform to study the interplay between these phases. Specifically, in pressurized or substituted CsV3Sb5, the relationship between CDW and superconductivity is unusual and remains to be fully understood. Recently, coexisting and competing 2×2×4 and 2×2×2 CDW phases were discovered in CsV3Sb5. To investigate the evolution of the CDW phases with the substitution of V atoms, we performed x-ray diffraction experiments on Cs(V1−xTax)3Sb5 and Cs(V1−xNbx)3Sb5. Our results indicate that in all substituted samples, the discrete CDW reflection points in pristine CsV3Sb5 change to rodlike structures along the c★ direction. This suggests that the long-ranged three-dimensional CDW becomes quasi-two-dimensional by the substitution of V by Ta/Nb. Moreover, our temperature-dependent measurements show that there is no hysteresis behavior of CDW signals, indicating that even a slight substitution of Nb or Ta as low as 0.021 and 0.04, respectively, can easily suppress the 2×2×4 CDW phase. These findings uncover the CDW evolution upon substitution of V atoms in CsV3Sb5, providing insights into the microscopic mechanism of CDW and helping to understand the interplay between intertwined phases and superconductivity.

关键词： Charge density waves Kagome lattice Superconductors X-ray diffraction

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Nonlinear Topological Mechanics in Elliptically Geared Isostatic Metamaterials

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Physical Review Letters 2023年第4期131卷 046101-046101页

作者： Fangyuan Ma Zheng Tang Xiaotian Shi Ying Wu Jinkyu Yang Di Zhou Yugui Yao Feng Li Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology Beijing 100081 China Aeronautics and Astronautics University of Washington Seattle Washington 98195 USA School of Science Nanjing University of Science and Technology Nanjing 210094 China Mechanical Engineering Seoul National University Seoul 08826 Korea

Despite the extensive studies of topological systems, the experimental characterizations of strongly nonlinear topological phases have been lagging. To address this shortcoming, we design and build elliptically geared isostatic metamaterials. Their nonlinear topological transitions can be realized by collective soliton motions, which stem from the transition of nonlinear Berry phase. Endowed by the intrinsic nonlinear topological mechanics, surface polar elasticity and dislocation-bound zero modes can be created or annihilated as the topological polarization reverses orientation. Our approach integrates topological physics with strongly nonlinear mechanics and promises multiphase structures at the micro- and macroscales.

关键词： Classical mechanics Elasticity Phase transitions Topological phases of matter

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Understanding the improved performance of sulfur-doped interconnected carbon microspheres for Na-ion storage

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Carbon Energy 2021年第4期3卷 615-626页

作者： Xinran Yuan Siming Chen Jinliang Li Junpeng Xie Genghua Yan Botian Liu Xibo Li Rui Li Likun Pan Wenjie Mai Department of Physics Siyuan LaboratoryGuangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy MaterialsJinan UniversityGuangzhouGuangdongChina School of Advanced Materials Shenzhen Graduate SchoolPeking UniversityShenzhenGuangdongChina Department of Chemistry and Biological Engineering Guilin University of TechnologyGuilinChina Shanghai Key Laboratory of Magnetic Resonance School of Physics and Electronic ScienceEast China Normal UniversityShanghaiChina

As one of the low-cost energy storage systems,Na-ion batteries(NIBs)have received tremendous ***,the performance of current anode materials still cannot meet the requirements of *** our work,we obtain sulfur-doped interconnected carbon microspheres(S-CSs)via a simple hydrothermal method and subsequent sulfurizing *** S-CSs exhibit an ultrahigh reversible capacity of 520 mAh g^(-1) at 100 mA g^(-1) after 50 cycles and an excellent rate capability of 257 mAh g^(-1),even at a high current density of 2 A g^(-1).The density functional theory calculations demonstrate that sulfur doping in carbon favors the adsorption of Na atom during the sodiation process,which is accountable for the performance ***,we also utilize operando Raman spectroscopy to analyze the electrochemical reaction of our S-CSs,which further highlights the sulfur doping in improving Na-ion storage performance.

关键词： electrochemical enhancement mechanism electrochemical reaction Na-ion batteries sulfur-doped interconnected carbon microspheres

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Single pair of type-III Weyl points half-metals: BaNiIO6 as an example

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Physical Review Materials 2023年第1期7卷 014202-014202页

作者： Guangqian Ding Jianhua Wang Zhi-Ming Yu Zeying Zhang Wenhong Wang Xiaotian Wang School of Science Chongqing University of Posts and Telecommunications Chongqing 400065 China School of Physical Science and Technology Southwest University Chongqing 400715 China Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology Beijing 100081 China Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems School of Physics Beijing Institute of Technology Beijing 100081 China College of Mathematics and Physics Beijing University of Chemical Technology Beijing 100029 China School of Electronics & Information Engineering Tiangong University Tianjin 300387 China Institute for Superconducting and Electronic Materials (ISEM) University of Wollongong Wollongong 2500 Australia

The realization of Weyl systems with the minimum nonzero number of Weyl points (WPs) and full spin polarization remains challenging in topology physics and spintronic. In this paper, we used first-principles calculations and symmetry analysis to demonstrate that BaNiIO6, a dynamically and thermodynamically stable half-metallic material, hosts fully spin-polarized single-pair (SP) WPs with a charge number (C) of ±2 and a type-III band dispersion around the Fermi level. Moreover, the fully spin-polarized SP-WPs induce double-helicoid Fermi arcs on the (101¯0) surface. The half-metallic state and the spin-polarized SP-WPs are robust to uniform strains (from −10 to +8%) and onsite Hubbard-Coulomb interactions (from 0 to 6 eV). When +9 or +10% uniform strain is applied to the BaNiIO6 system, it hosts six additional type-II WPs with |C|=1 in the three-dimensional Brillouin zone in addition to the two type-III WPs with |C|=2. We hope that this paper will motivate future research into SP-WPs half-metals.

关键词： Electronic structure Weyl fermions Half-metals Density functional theory k dot p method

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Directional Design of Materials Based on Multi-Objective Optimization:A Case Study of Two-Dimensional Thermoelectric SnSe

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Chinese physics Letters 2021年第2期38卷 84-90页

作者： Shenshen Yan Yi Wang Zhibin Gao Yang Long Jie Ren Center for Phononics and Thermal Energy Science China-EU Joint Lab on NanophononicsShanghai Key Laboratory of Special Artificial Microstructure Materials and TechnologySchool of Physics Science and EngineeringTongji UniversityShanghai 200092China Department of Physics National University of SingaporeSingapore 117551Republic of Singapore Shanghai Research Institute for Intelligent Autonomous Systems Tongji UniversityShanghai 200092China

The directional design of functional materials with multi-objective constraints is a big challenge,in which performance and stability are determined by a complicated interconnection of different physical *** apply multi-objective optimization,based on the Pareto Efficiency and Particle-Swarm Optimization methods,to design new functional materials *** a demonstration,we achieve the thermoelectric design of 2D SnSe materials via the above *** identify several novel metastable 2D SnSe structures with simultaneously lower free energy and better thermoelectric performance in their experimentally reported monolayer *** hope that the results of our work on the multi-objective Pareto Optimization method will represent a step forward in the integrative design of future multi-objective and multi-functional materials.

关键词： materials. methods. directional

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