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检索条件"机构=Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory"
190 条 记 录,以下是91-100 订阅
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Frequency stability of InP HBT over 0.2 to 220 GHz
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Journal of Semiconductors 2015年 第2期36卷 77-81页
作者: 周之蒋 任坤 刘军 程伟 陆海燕 孙玲玲 The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute
The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extra... 详细信息
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A high linearity X-band SOI CMOS digitally-controlled phase shifter
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Journal of Semiconductors 2015年 第6期36卷 115-122页
作者: 陈亮 陈新宇 张有涛 李智群 杨磊 Nanjing Electronic Devices Institute Guobo Electronics Co.Ltd RF & OE IC Institute Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
This paper proposed an X-band 6-bit passive phase shifter (PS) designed in 0.18 μm silicon-on-insulator (SOI) CMOS technology, which solves the key problem of high integration degree, low power, and a small size ... 详细信息
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On-chip integrated inductors with NiFe-SiOx magnetic thin films on GaN  4th
On-chip integrated inductors with NiFe-SiOx magnetic thin fi...
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4th International Conference on Electronics, Communications and Networks, CECNet2014
作者: Kong, Cen Zhou, Jianjun Li, Hui Lu, Haiyan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
Fabrication, characterization, and modeling of on-chip integrated inductors with magnetic thin film (NiFe-SiOX) on sapphire-based GaN substrate was reported. The fabrication processes were compatible with the conventi... 详细信息
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Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz
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Chinese Physics Letters 2015年 第7期32卷 175-178页
作者: 牛斌 王元 程伟 谢自力 陆海燕 常龙 谢俊领 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093
A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common ... 详细信息
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Measurement and modeling techniques for InP-based HBT devices to 220GHz
Measurement and modeling techniques for InP-based HBT device...
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IEEE Conference on Electron Devices and Solid-State circuits
作者: Haiyan Lu Wei Cheng Zhijiang Zhou Oupeng Li Bin Niu Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou China Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu China
In this paper a measurement method for InP-Based HBT devices to 220GHz is presented. S-parameters are de-embedded using TRL calibration structures (70-220GHz) fabricated on-wafer. The results shown in this paper are c... 详细信息
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AlGaN/GaN MIS-HEMT with ultrathin barrier using PECVD SiN as passivation and gate-insulating layer  4th
AlGaN/GaN MIS-HEMT with ultrathin barrier using PECVD SiN as...
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4th International Conference on Electronics, Communications and Networks, CECNet2014
作者: Wang, Zheli Zhou, Jianjun Kong, Cen Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Jiangsu China
The Twodimensional Electron Gas density (2DEG) and electron mobility (μ) of Al0.3Ga0.7N/GaN heterostructures with a 5-nm-thick barrier increased after the deposition of 10-nm-thick SiN by Plasma Enhanced Chemical Vap... 详细信息
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Fabrication and application of 1.7KV SiC-Schottky diodes
Fabrication and application of 1.7KV SiC-Schottky diodes
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European Conference on Silicon Carbide and Related Materials, ECSCRM 2014
作者: Chen, G. Bai, S. Liu, A. Wang, L. Huang, R.H. Tao, Y.H. Li, Y. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
High voltage 4H-SiC Ni metal junction barrier schottky (JBS) diode with reverse breakdown voltage of 1700 V and forward current of 5 A has been fabricated. A low reverse leakage current below 3.8×10-5 A/cm2 at th... 详细信息
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Development of 2500V SMB-seagull SiC JBS diodes
Development of 2500V SMB-seagull SiC JBS diodes
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International Conference on Mechatronics Engineering and Electrical Engineering, CMEEE 2014
作者: Chen, G. Zhang, Q.M. Bai, S. Liu, A. Wang, L. Huang, R.H. Li, D.H. Li, Y.N. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China Jinan Semiconductor Institute Jinan China
High voltage 4H-SiC Ti schottky Junction Barrier Schottky (JBS) diode with breakdown voltage of 2500 V and forward current of 2 A has been fabricated. A low reverse leakage current below 1.13 × 10-4 A/cm2 at the ... 详细信息
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An InP DHBT 140 GHz-165 GHz Amplifier
An InP DHBT 140 GHz-165 GHz Amplifier
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IEEE International Conference on Communication Problem-Solving
作者: Sun Yan Cheng Wei Li Ou Peng Lu Hai Yan Li Xiao Wang Yuan Niu Bin Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China
We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 μm InP DHBTs and a multilayer thin-film... 详细信息
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InGaAs/InP double heterojunction bipolar transistors with fmax=532GHz
InGaAs/InP double heterojunction bipolar transistors with fm...
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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015
作者: Wei, Cheng Yuan, Wang Bin, Niu Zi-Li, Xie Jun-Ling, Xie Hai-Yan, Lu Yan, Zhao Yan, Sun Tang-Sheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing210093 China
An InGaAs/InP DHBT with InGaAsP composite collector is designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The DHBT with emitter area of 0.5×5μm2... 详细信息
来源: 评论