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RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

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Journal of Semiconductors 2022年第9期43卷 64-67页

作者： Lishu Wu Jiayun Dai Yuechan Kong Tangsheng Chen Tong Zhang Joint International Research Laboratory of Information Display and Visualization School of Electronic Science and EngineeringSoutheast UniversityNanjing 210096China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology Ministry of EducationSchool of Instrument Science and EngineeringSoutheast UniversityNanjing 210096China

This letter presents the fabrication of InP double heterojunction bipolar transistors(DHBTs)on a 3-inch flexible substrate with various thickness values of the benzocyclobutene(BCB)adhesive bonding layer,the corresponding thermal resistance of the InP DHBT on flexible substrate is also measured and *** DHBT on a flexible substrate with 100 nm BCB obtains cut-off frequency f_(T)=358 GHz and maximum oscillation frequency f_(MAX)=530 ***,the frequency performance of the InP DHBT on flexible substrates at different bending radii are *** is shown that the bending strain has little effect on the frequency characteristics(less than 8.5%),and these bending tests prove that InP DHBT has feasible flexibility.

关键词： InP DHBT thermal resistance radio frequency bending

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Research and Implementation of 150W SiC Internally Match and Power Combiner at S Band

Research and Implementation of 150W SiC Internally Match and...

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2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications

作者： Gang Chen Shichang Zhong Yuchao Li Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467360760

As one of the third generation semiconductor materials,SiC has many advantages,such as high-power,high gate-drain breakdown voltage,heat stability and anti-radiation *** it is of high value for study and application *** paper bases on 20mm SiC MESFET which is made by NEDI,through internally match circuit and power combiner technology,designs a power *** power module output power has 150W with the gain is 9dB at S-band 2.8GHz under a pulse condition of 100us pulse width and 10% duty cycle.

关键词： SiC MESFET Internally Match Circuit Power Combiner Power combiners pulse condition power module DUTY CYCLE Superhigh frequency

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Study on Fabrication and Fast Switching of High Voltage SiC JFET

Study on Fabrication and Fast Switching of High Voltage SiC ...

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2013 International Conference on Solar Energy Materials and Energy Engineering(SEMEE 2013)

作者： Gang Chen Song Bai Runhua Huang Yonghong Tao Ao Liu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate for the power device because a JFET has no oxide-semiconductor interface in the channel region and does not use the low mobility SiC MOSFET inversion layer as a channel. Forward I-V up to 4A for SiC VJFET, Gate voltage from 2V to 3.5V by step 0.5V. Reverse Ⅰ-Ⅴ characteristics up to 4500V(VG=-8V) for SiC VJFET, Gate voltage from -4V to -8V by step -2V. Turn-off characteristics are studied and fast turn-off time of 136 ns at room temperature under DC voltage of 600 V is successfully demonstrated.

关键词： SiC JFET Ohmic Trench

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Application of 1200V-8A SiC JBS diodes in the motor system

Application of 1200V-8A SiC JBS diodes in the motor system

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Liu, Ao Chen, Gang Bai, Song Li, Rui Sun, Wei Feng Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China National ASIC System Engineering Research Center Southeast University Nanjing 210096 China

1200V-8A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on in-house SiC epitaxy and device technology. As a free-wheeling diode for the IGBT in inverter of motor system, the 1200V SiC JBS diode was compared to the Si ultra-fast diode from Fairchild Co. Ltd. The SiC diode achieved 88% recovery loss reduction and corresponding IGBT showed 35% lower turn-on loss. So, it will promote the application of motor system in high frequency and high efficiency. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process 17

0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Pr...

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17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020

作者： Huang, Wei Wang, Suyuan Liu, Zhu Zhang, Junyun Huang, Nianning Wang, Xinqiang Chen, Tangsheng Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China Peking University State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Beijing100871 China

ISBN: (纸本)9780738111889

The resolution enhancement lithography assisted by chemical shrink (RELACS) is presented to increase the resolution of the i-line lithography. We have succeeded in developing an advanced i-line lithography process based on i-line stepper lithography and second-RELACS process. Moreover, the limit resolution of i-line lithography can be increased from 0.35 μm to 0.1 μm at the first time, and the wafer yield of GaN high electron mobility transistor (HEMT) with 3.1 mm gate width which has an Lg = 0.147 μm is 87.4 %. Besides, the second-RELACS process is applied to X-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA), the resist width and gate length are about 0.15 μm and 0.2 μm. It is confirmed that the wafer yield of T gate with 6.8 mm gate width can be as high as 70.2 %. Comparing with the results of deep ultra-violet (DUV) lithography, the electrical and radio frequency (RF) characteristics of the GaN HEMTs fabricated with the second-RELACS process are stable. © 2020 IEEE.

关键词： Gallium nitride

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Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET

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Energy and Power Engineering 2013年第4期5卷 1284-1287页

作者： Gang Chen Song Bai Yonghong Tao Yun Li 1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China 2Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.

关键词： 4H-SiC VJFET Ohmic Trench Implant

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Reliable and broad-range layer identification of Au-assisted exfoliated large area MoS_(2)and WS_(2)using reflection spectroscopic fingerprints

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Nano Research 2022年第9期15卷 8470-8478页

作者： Bo Zou Yu Zhou Yan Zhou Yanyan Wu Yang He Xiaonan Wang Jinfeng Yang Lianghui Zhang Yuxiang Chen Shi Zhou Huaixin Guo Huarui Sun School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology ShenzhenShenzhen 518055China Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuan 030006China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China University of Science and Technology of China Hefei 230026China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

The emerging Au-assisted exfoliation technique enables the production of a wealth of large-area and high-quality ultrathin two dimensional(2D)***,damage-free,and reliable determination of the layer number of such 2D films can greatly promote layer-dependent physical studies and device ***,an optical method has been developed for simple,high throughput,and accurate determination of the layer number for Au-assisted exfoliated MoS_(2)and WS_(2)films in a broad thickness *** method is based on quantitative analysis of layer-dependent white light reflection spectra(WLRS),revealing that the intensity of exciton-induced reflection peaks can be used as a clear indicator for identifying the layer *** simple yet robust method will facilitate fundamental studies on layer-dependent optical,electrical,and thermal properties and device applications of 2D *** technique can also be readily combined with photoluminescence(PL)and Raman spectroscopies to study other layer-dependent physical properties of 2D materials.

关键词： Au-assisted exfoliation MoS_(2)and WS_(2) layer identification white light reflection spectra excitonic peaks

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Simulation of polarization pinning effect in PZT/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure

Simulation of polarization pinning effect in PZT/AlGaN/GaN m...

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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010

作者： Kong, Yuechan Zhou, Jianjun Xue, Fangshi Li, Liang Chen, Chen Luo, Wenbo Zeng, Huizhong Zhu, Jun National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China State Key Lab. of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781424457052

The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmetrical shift of the C-V profile is observed that when swept positively, the C-V curve shifts to the right with increasing the negative starting voltage, while hardly move with different starting positive voltage when swept in the opposite direction. To understand this, a pinning effect model is developed and incorporated into self-consistent calculation, with taking history-dependent electric field effect into account. Owing to the strong polarization of underlying AlGaN layer, the switchable polarization of ferroelectric is initially pinned at -1.55 μC/cm2 and does not change after positive bias operation. When increasing the negative sweeping voltage, the partially switched ferroelectric dipoles are increased, which results in the right-shift of the C-V curves, in agreement with the experiment. © 2010 IEEE.

关键词： Aluminum gallium nitride

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Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record drain current density of 1.7 A/mm and a threshold voltage of +1.5 V

Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record d...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Kai Zhang Jianjun Zhou Cen Kong Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing

ISBN: (纸本)9781509046140

The paper reports high performance enhancement-mode MOS-HEMT based on quaternary InAlGaN barrier. A self-aligned gate technology is used for gate recessing, dielectric deposition and gate electrode formation processes, where improved digital recessing process as well as O2 plasma-assisted Al 2 O 3 gate dielectric is developed. Fabricated E-mode MOS-HEMT delivers a record output current density of 1.7A/mm with a threshold voltage (V TH ) of 1.5 V, and a small on-resistance (R on ) of 2.0 Q-mm. Excellent V TH hysteresis and greatly improved gate leakage characteristics are also demonstrated.

关键词： Logic gates HEMTs MODFETs Dielectrics Aluminum oxide Threshold voltage Leakage currents

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High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB

High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped ...

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IEEE Conference on Electron Devices and Solid-State circuits

作者： Xinxin Yu Jianjun Zhou Yuechan Kong Daqing Peng Weibo Wang Fangjin Guo Haiyan Lu Wen Wang Cen Kong Zhonghui Li Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781509018314

High power performance AlGaN/GaN HEMT devices with 0.1 μm Y-shaped gates encapsulated with low-κ BCB are reported. The maximum drain current and transconductance of the device are 1.15 A/mm and 350 mS/mm, respectively. The two-terminal breakdown voltage exceeds 30 V, which ensures a high operating voltage. Using the novel 0.1 μm low parasitic Y-shaped gate associated with AlGaN back barrier, a f T of 90 GHz and a f max of 170 GHz were obtained for the device. Through measurements of the W-band GaN MMIC PA, ability of 1.55 W/mm output power density was achieved for the device at frequency of 92 GHz. These outstanding performance indicates the devices are suitable for W-band MMIC applications.

关键词： Decision support systems Logic gates Conferences Electron devices Solid state circuits Gain

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