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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Zhao Yingdong Zhang Kai Yang Fei School of Electronic Science & Engineering Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

A 4th-order subharmonic downconversion mixer with a radio frequency (RF) of 480 GHz and intermediate frequency (IF) of 20 GHz that employs MOS symmetric varactors (SVARs) is demonstrated in 65-nm CMOS. The mixer achieves the minimum conversion loss of 25 dB at 20 GHz, VG = 0.5 V and VNW = 1 V. The return loss of the output port can reach nearly 30 dB, achieving a good matching effect, and can operate at a LO power of 9 dBm. The 4-GHz IF bandwidth spans between 18 and 22 GHz.

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Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging 21

Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusio...

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21st International Conference on Electronic Packaging technology, ICEPT 2020

作者： Dai, Jiayun Wang, Fei Xu, Lida Zhao, Desheng Han, Ping Chen, Tangshen Nanjing University National Laboratory of Solid State Microstructure China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Suzhou Institute of Nanotech and Nano-bionics Nano Fabrication Facility Suzhou China

ISBN: (纸本)9781728168265

A low temperature fine pitch wafer scale bonding process through Au-In solid liquid inter diffusion bonding is discussed in this paper. 20 µm fine pitch gold and indium miro-bumps with 10 µm diameter are fabricated on two oxidized silicon wafers. Then the wafer bonding process is accomplished at 180 °C with less than 2 µm alignment accuracy. Daisy chains of nearly 2500 interconnects with a fixed contact size of 10×10 µm2 connected successfully. Besides, there is no significant change of the daisy chain resistance after temperature cycling test. An average die shear strength of more than 20 MPa is also achieved. This work shows great potential of Au-In solid liquid inter diffusion bonding for future high density wafer level packaging and heterogeneous integration. © 2020 IEEE.

关键词： Temperature

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0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process

0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Pr...

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17th China International Forum on Solid State Lighting &2020 International Forum on Wide Bandgap Semiconductors (第十七届中国国际半导体照明论坛暨2020国际第三代半导体论坛)

作者： Wei Huang Suyuan Wang Zhu Liu Junyun Zhang Nianning Huang Xinqiang Wang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D State Key Laboratory of Artificial Micro structure and Mesoscopic Physics School of PhysicsPeking U

ISBN: (数字)9780738111889

ISBN: (纸本)9781665419642

The resolution enhancement lithography assisted by chemical shrink(RELACS)is presented to increase the resolution of the i-line *** have succeeded in developing an advanced i-line lithography process based on i-line stepper lithography and second-RELACS ***,the limit resolution of i-line lithography can be increased from 0.35 μm to 0.1 μm at the first time,and the wafer yield of GaN high electron mobility transistor(HEMT)with 3.1 mm gate width which has an Lg = 0.147 μm is 87.4%.Besides,the second-RELACS process is applied to X-band GaN monolithic microwave integrated circuit power amplifier(MMIC PA),the resist width and gate length are about 0.15 μm and 0.2 μ*** is confirmed that the wafer yield of T gate with 6.8 mm gate width can be as high as 70.2%.Comparing with the results of deep ultra-violet(DUV)lithography,the electrical and radio frequency(RF)characteristics of the GaN HEMTs fabricated with the second-RELACS process are stable.

关键词： Lithography Logic gates Gallium nitride Resists HEMTs Microwave circuits Chemicals

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CL-TWE Mach–Zehnder electro-optic modulator based on InP-MQW optical waveguides

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Chinese Optics Letters 2019年第6期17卷 36-40页

作者： Guang Qian Bin Niu Wu Zhao Qiang Kan Xiaowen Gu Fengjie Zhou Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

In this Letter,we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode(CL-TWE)Mach–Zehnder modulator(MZM)based on InP-based multiple quantum well(MQW)optical *** device configuration mainly includes an optical Mach–Zehnder interferometer,a direct current electrode,two phase electrodes,and a CL-TWE consisting of a U electrode and an I *** modulator was fabricated on a 3 *** epitaxial wafer by standard photolithography,inductively coupled plasma dry etching,wet etching,electroplating,*** results show that the MZM exhibits a3 dB electro-optic bandwidth of about 31 GHz,a Vπof 3 V,and an extinction ratio of about 20 dB.

关键词： optical Mach multiple plasma wave was dB

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Efficient immersion cooling for electronic devices based on multi-physics field coupling

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International Journal of Thermal Sciences 2025年 215卷

作者： Fan, Chengcheng Yang, Ruixue Guo, Huaixin Jiang, Haitao Zhang, Chengbin Chen, Yongping Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions Suzhou University of Science and Technology Jiangsu Suzhou 215009 China School of Energy and Environment Southeast University Jiangsu Nanjing 210096 China Advanced Ocean Institute of Southeast University Jiangsu Nantong 226019 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Jiangsu Nanjing 210096 China China Electronics Technology Group Corporation 38th Research Institute Anhui Hefei 230031 China

Efficient cooling of high heat-flux electronic devices involving multi-physics field coupling has become a key challenge. To address these challenges, this paper establishes a multi-physics field coupling heat-transfer model for electronic devices using immersion cooling and serpentine channel cooling. The multi-physics field coupling analysis of electronic devices with different cooling methods is carried out, focusing on the influences of input voltage, inlet coolant mass flow rate, and coolant type. The results indicate that multi-physics field coupling effects in electronic devices lead to a temperature increase of 1.8 %∼17.8 %, a rise in current density of 235 %∼245 %, and a maximum displacement increase of 0.12 μm. Moreover, the temperature, output current, and strain energy density of electronic devices increase with higher input voltage but decrease with higher inlet mass flow rate. Coolant type significantly influences the thermal and mechanical performance of electronic devices but has relatively minor effect on their electrical characteristics. Compared to serpentine channel cooling, immersion cooling reduces discrepancies in temperature, current density, and strain energy density by 23.4 %, 10.8 %, and 70 %, respectively, with and without multi-physics field coupling, effectively mitigating the multi-physics field coupling effect. Under multi-physics field coupling conditions, the thermal management advantages of immersion cooling become increasingly apparent compared to serpentine channel cooling with increasing electric potential, while differences in electrical performance remain minimal. © 2025

关键词： Electronic devices Heat transfer performance Immersion cooling Multi-physics field coupling

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Blind Calibration Algorithm for Time-interleaved Analog-to-Digital Conversion System 15

Blind Calibration Algorithm for Time-interleaved Analog-to-D...

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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Jiang, Ziqian Xu, Jie Li, Xiaopeng Zhang, Youtao Zhang, Changchun Guo, Yufeng Zhang, Yi College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9798350338874

This paper presents a blind calibration algorithm for a multi-channel time-interleaved analog-to-digital conversion system implemented in MATLAB/simulink. The behavior level simulation of the calibration system is carried out. The simulation results show that the signal-to-noise ratio (SNR), signal-to-noise-distortion ratio(SNDR), and spurious-free dynamic range (SFDR) of the signal corrected by the calibration system are greatly improved, which lays a solid foundation for the subsequent digital circuit design. Behavioral simulations are presented for a 4-channel 10-bit TI-ADC in order to verify the effectiveness of the proposed method. Using the introduced calibration technique, SFDR increased by 33 dB on average. © 2023 IEEE.

关键词： Analog to digital conversion

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Developing the Ka-band GaN Power HEMT devices

Developing the Ka-band GaN Power HEMT devices

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2012 5th Global Symposium on Millimeter-Waves(2012年第五届全球毫米波会议 GSMM 2012)

作者： J. J. Zhou X. Dong C. Kong Y. C. Kong C. J. Ren Z. H. Li T. S. Chen C. Chen B. Zhang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

High quality Al0.3Ga0.7N/GaN/Al0.04Ga0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using developed 0.25 urn self-aligned Tshaped gate technology, a 4.5 W/mm output power density and 28％ PAE were obtained in continues wave (CW) mode at 34GHz. To increase the frequency performance of the GaN HEMT devices, a 0.15 μm Yshaped gate technology was developed. By using this technology, the parasitic capacitance is effectively suppressed. The fT and fmax of the GaN HEMT device fabricated with the 0.15 μm Yshaped gate technologies were greatly improved and reached 80GHz and 110GHz, respectively. A 3.1 W/mm output power density and 26.3％ PAE were also obtained in CW mode at 34GHz.

关键词： Ka-band GaN Power HEMT

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Wafer-scale integration of GaAs pHEMT on Silicon by epitaxial layer transfer

Wafer-scale integration of GaAs pHEMT on Silicon by epitaxia...

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IEEE Conference on Electron Devices and Solid-State circuits

作者： Li Shu Wu Yan Zhao Gui Xiong Shi Wei Cheng Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

The present work describes the study and improvement of heterogeneous integration based on epitaxial layer transfer technique, which is used to separate III/V device from their substrate and transfer to the other substrate. Our work aims in the development of a new process for integration of GaAs device with Silicon substrate. It is based on low temperature bonding of the epitaxial layer transfer technology with bisbenzocyclobutene (BCB). Using this method, we demonstrate that GaAs pseudomorphic high electron mobility transistor (pHEMT) device on a 3 inch-diameter GaAs wafer is transferred to a Silicon substrate, and evaluate the different thickness of BCB that affect the performance of GaAs pHEMT device.

关键词： Conferences Electron devices Solid state circuits

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The research of heterogeneous integration based on epitaxial layer transfer technology

The research of heterogeneous integration based on epitaxial...

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IEEE Conference on Electron Devices and Solid-State circuits

作者： LiShu Wu Yan Zhao Wei Cheng Zi Qian Huang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781479923366

The present work describes the study and improvement of heterogeneous integration based on epitaxial layer transfer technique, which is used to separate III/V device structures from their substrate and transfer to the other substrate. Our work aims in the development of a new process for integration of GaAs devices with Si. It is based on low temperature bonding of the epitaxial layer transfer technology. Using this method, we demonstrate that GaAs PIN epitaxial layer on a 3 inch-diameter GaAs wafer is transferred to a silicon substrate. After the GaAs PIN epitaxial layer is transferred, the GaAs PIN devices on silicon are fabricated, besides the IV characteristic of GaAs PIN devices is unaffected by epitaxial layer transfer.

关键词： Epitaxial growth Gallium arsenide Substrates Lithography Performance evaluation Investment

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AlGaN/GaN HEMTs on Si(100) substrate

AlGaN/GaN HEMTs on Si(100) substrate

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IEEE Conference on Electron Devices and Solid-State circuits

作者： Yan Zhao Cen Kong Lishu Wu Wei Cheng Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781479923366

The Si (100) substrate of AlGaN/GaN HEMTs shows potential of the intimately heterogeneous integration of GaN and Si electronics. It offers new opportunities to increase the functionality and performance of GaN devices. In this paper, we describe our effort on demonstrating the heterogeneous integration of GaN transistor and Si substrate. AlGaN/GaN HEMTs have been fabricated on Si (100) substrate through epitaxial transfer process.

关键词： Gallium nitride HEMTs MODFETs Epitaxial growth Adhesives Silicon Performance evaluation

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