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检索条件"机构=Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory"
190 条 记 录,以下是111-120 订阅
排序:
24.8 A W-Band Power Amplifier with Distributed Common-Source GaN HEMT and 4-Way Wilkinson-Lange Combiner Achieving 6W Output Power and 18% PAE at 95GHz
24.8 A W-Band Power Amplifier with Distributed Common-Source...
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IEEE International Conference on Solid-State circuits (ISSCC)
作者: Weibo Wang Fangjin Guo Tangsheng Chen Keping Wang Tianjin University Tianjin China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
W-band power amplifiers (PAs) play an important role in Gb/s-data-rate wireless communication, imaging, and radar applications. Traditionally, multiple transistors are connected in parallel to maximize the output powe... 详细信息
来源: 评论
Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells
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Chinese Physics Letters 2019年 第7期36卷 82-85页
作者: Xiao-di Xue Yu Liu Lai-pan Zhu Wei Huang Yang Zhang Xiao-lin Zeng Jing Wu Bo Xu Zhan-guo Wang Yong-hai Chen Wei-feng Zhang Henan Key Laboratory of Photovoltaic Materials Henan University Kaifeng 475004 Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016
The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocur... 详细信息
来源: 评论
Power GaN HEMT on Si Substrate with Al-Content Step-Graded AlGaN Transition Layers
Power GaN HEMT on Si Substrate with Al-Content Step-Graded A...
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第十七届全国化合物半导体材料微波器件和光电器件学术会议
作者: Jinyu Ni Cen Kong Jianjun Zhou Xun Dong Zhonghui Li Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
A 1.9-μm-thick GaN high electron mobility transistors (HEMT) structure has been grown on 3-inch Si (111) substrate by metalorganic chemical vapor *** using an AIN buffer layer and two AI-content step-graded AIGaN tra... 详细信息
来源: 评论
Design of a RF Doherty Power Amplifier Based on Handset Application  15
Design of a RF Doherty Power Amplifier Based on Handset Appl...
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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023
作者: Tang, Yujie Zhou, Yingjie Zhou, Hao Yang, Lei Zheng, Yuan Guo, Yufeng Zhang, Yi College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China State Key Laboratory of Millimeter Waves Nanjing210096 China
A Doherty Power Amplifier (PA) with high efficiency and high linearity that can be used in smart communication devices such as mobile phones in the sub-6GHz frequency band is proposed. This Doherty PA uses the InGaP/G... 详细信息
来源: 评论
A Heterogeneous Integration of GaAs Schottky Barrier Diode to Quartz Substrate Using Micro Transfer-Printing
A Heterogeneous Integration of GaAs Schottky Barrier Diode t...
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Asia Communications and Photonics Conference and Exhibition (ACP)
作者: Yuxuan Wang Kunpeng Dai Bin Niu Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
Gallium Arsenide Schottky barrier diodes (GaAs SBDs) are widely used in terahertz (THz) applications. Quartz substrate has recently emerged as a promising platform for GaAs SBDs due to its intrinsically low permittivi... 详细信息
来源: 评论
On-wafer deembeedding techniques with application to HEMT devices characterization
On-wafer deembeedding techniques with application to HEMT de...
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International Conference on Solid-State and integrated Circuit technology
作者: Haiyan Lu Weibo Wang Jianjun Zhou Tangshen Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Device Institute Nanjing China
Two different deembedding methods, including open-short method and open-short-load+c deembedding method are discussed in this paper. These deembedding techniques are used to remove all parasitic elements of the device... 详细信息
来源: 评论
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using...
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IEEE International Wireless Symposium (IWS)
作者: Lu Yuxiang Li Zekun Yu Jiayang Li Huanbo Zhou Peigen Lu Haiyan Chen Jixin State Key Laboratory of Millimeter Wave Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mat... 详细信息
来源: 评论
InAlN/AlN/GaN HEMTs on sapphire substrate
InAlN/AlN/GaN HEMTs on sapphire substrate
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: H. Q. Liu J. J. Zhou X. Dong T. S. Chen C. Chen National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing China
High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×10 13 cm -2 was measured in this... 详细信息
来源: 评论
Design of a 340 GHz GaN-Based Frequency Doubler with High Output Power
Design of a 340 GHz GaN-Based Frequency Doubler with High Ou...
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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)
作者: Yiyuan Zheng Kai Zhang Kunpeng Dai Yuechan Kong Gang Lin Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
This paper presents a high-power 340 GHz frequency doubler based on GaN Schottky barrier diode (SBD) technology. The proposed frequency doubler consists of a pair of GaN SBDs chips, a quartz circuit, as well as the tr... 详细信息
来源: 评论
Study of small signal of 4H-SIC static induction transistor
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Telkomnika - Indonesian Journal of Electrical Engineering 2013年 第5期11卷 2838-2844页
作者: Chen, Gang Lu, Yang Li, Li Bai, Song Li, Yun Lu, Haiyan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory China Nanjing Electronic Devices Institute Nanjing 210016 China
Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.5 μm and the gate channel is 1.5 μm. One cell has ... 详细信息
来源: 评论