检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

125 篇 会议
65 篇 期刊文献

馆藏范围

190 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

133 篇 工学
- 116 篇 电子科学与技术（可...
- 76 篇 材料科学与工程（可...
- 45 篇 化学工程与技术
- 33 篇 电气工程
- 18 篇 信息与通信工程
- 14 篇 计算机科学与技术...
- 11 篇 光学工程
- 9 篇 冶金工程
- 8 篇 仪器科学与技术
- 8 篇 动力工程及工程热...
- 7 篇 软件工程
- 3 篇 网络空间安全
- 2 篇 机械工程
- 2 篇 轻工技术与工程
- 1 篇 控制科学与工程
- 1 篇 生物医学工程（可授...
- 1 篇 生物工程
63 篇 理学
- 45 篇 化学
- 37 篇 物理学
- 6 篇 数学
- 4 篇 地质学
- 1 篇 生物学
- 1 篇 统计学（可授理学、...
1 篇 管理学
- 1 篇 管理科学与工程(可...

主题

23 篇 gallium nitride
13 篇 hemts
11 篇 silicon carbide
10 篇 indium phosphide
8 篇 modfets
7 篇 inp
7 篇 silicon
6 篇 logic gates
6 篇 performance eval...
5 篇 power amplifiers
5 篇 scattering param...
5 篇 integrated circu...
5 篇 aluminum gallium...
5 篇 dh-hemts
5 篇 heterojunction b...
4 篇 iii-v semiconduc...
4 篇 schottky barrier...
4 篇 substrates
4 篇 efficiency
4 篇 microwave integr...

机构

78 篇 science and tech...
45 篇 science and tech...
24 篇 nanjing electron...
10 篇 nanjing guobo el...
9 篇 state key labora...
8 篇 college of integ...
6 篇 science and tech...
6 篇 science and tech...
6 篇 national key lab...
5 篇 fundamental scie...
5 篇 nanjing electron...
5 篇 department of mi...
4 篇 fundamental scie...
4 篇 science and tech...
4 篇 school of electr...
3 篇 national asic sy...
3 篇 center of materi...
3 篇 key laboratory o...
3 篇 school of optoel...
3 篇 science and tech...

作者

29 篇 tangsheng chen
23 篇 wei cheng
19 篇 yuechan kong
17 篇 haiyan lu
15 篇 jianjun zhou
13 篇 chen chen
12 篇 chen tangsheng
11 篇 bin niu
10 篇 chen gang
10 篇 bai song
10 篇 zhou jianjun
9 篇 cheng wei
8 篇 zhonghui li
8 篇 kai zhang
8 篇 ruimin xu
8 篇 yuan wang
7 篇 li liang
7 篇 li yun
7 篇 oupeng li
7 篇 yi zhang

语言

177 篇 英文
10 篇 中文
3 篇 其他

检索条件"机构=Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory"

共 190 条记录，以下是111-120 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

100GHz Static Frequency Divider Based on 0.5μm InP/InGaAs DHBT

100GHz Static Frequency Divider Based on 0.5μm InP/InGaAs D...

引用

IEEE International Conference on Communication Problem-Solving

作者： Bin Niu Wei Cheng You-Tao Zhang Yuan Wang Hai-Yan Lu Long Chang Jun-Ling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is presented. On chip thin film resistor and capacitor were integrated. Two levels of interconnect were developed. Composite collector design ... 详细信息

ISBN: (纸本)9781467365451

关键词： frequency dividers Static frequency divider Double heterojunction bipolar transistors Capacitors FILM RESISTORS THIN FILM RESISTORS

来源：评论

学校读者我要写书评

暂无评论

Influence of SiH4 flow rate on GaN films with in-situ SiNx mask on sapphire surface

Influence of SiH4 flow rate on GaN films with in-situ SiNx m...

引用

3rd International Conference on Materials Science and Manufacturing, ICMSM 2014

作者： Li, Zhong Hui Peng, Da Qing Luo, Wei Ke Li, Liang Zhang, Dong Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9783038350460

Sapphire substrate was treated by SiH4 under NH3 atmosphere before GaN growth and nano-size islands SiNx mask was formed on the substrate. Properties of GaN films were investigated by high resolution X-ray diffraction, photoluminescence and transmission electron microscopy. The results indicated that the SiH4 flow rate is an important factor affecting the size and density of SiNx mask besides SiH4 treatment time. The GaN films grown on the SiNx-patterned sapphire substrate revealed an epitaxial lateral overgrowth mode, which affected 3D to 2D growth time and the microstructures of GaN films. The lowest FWHM value of (102) rocking curve was 286 arcsec. as the SiH4 flow rate of 0.5sccm, with the calcultated edge-type dislocations density of 4.28×109cm-2. © (2014) Trans Tech Publications, Switzerland.

关键词： X ray diffraction

来源：评论

学校读者我要写书评

暂无评论

Simulation, fabrication and characterization of 6500V 4H-SiC JBS diode

Simulation, fabrication and characterization of 6500V 4H-SiC...

引用

2013 International Conference on Mechatronics and Semiconductor Materials, ICMSCM 2013

作者： Huang, Run Hua Tao, Yong Hong Chen, Gang Bai, Song Li, Rui Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783037859391

4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC JBS diode were reported. The drift layer thickness and doping are 55 μm and 9×1014 cm-3 respectively. 60 floating guard rings edge were fabricated as termination. The on-state voltage was 4 V at JF = 7A. © (2014) Trans Tech Publicutions, Switzerland.

关键词： Silicon carbide

来源：评论

学校读者我要写书评

暂无评论

Development of self-aligned process to decrease gate length in recessed SiC SIT

Development of self-aligned process to decrease gate length ...

引用

2014 International Conference on Manufacturing technology and Electronics Applications, ICMTEA 2014

作者： Chen, Gang Bai, Song Wang, Lin Tao, Yong Hong Liu, Haiqi Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783038353287

Because of difficulty in deep ion implantation, the recessed gate structure has been favored in SiC SIT. In order to improve the frequency, it is a good method to decrease the gate length by eliminating the side wall ion implantation affection. We developed normally-on RF 4H-SiC SIT with high small signal gain. The effect of forming the side wall protection between the source mesa and the gate area was simulated. © (2014) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

来源：评论

学校读者我要写书评

暂无评论

High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics

High-Performance Monolayer WS2 Field-effect Transistors on H...

引用

The 6th International Conference on Nanoscience & technology, China 2015

作者： Yang Cui Run Xin Zhihao Yu Yiming Pan Zhun-Yong Ong Xiaoxu Wei Junzhuan Wang Yun Wu Tangsheng Chen Yi Shi Baigeng Wang Yong-Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand Collaborative Innovation Center of Advanced MicrostructuresNanjing University School of Physics Nanjing University Institute of High Performance Computing Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute

WS2 is an attractive two-dimensional semiconductor material for electronic and optoelectronic device applications due to its high phonon limited mobility compared to other transition metal dichalcogenides. The measured field-effect mobility thus far, however, is much smaller than theoretical predictions, dominated by extrinsic factors including charge traps and impurities. Here, we report that the combination of high-quality Al2O3 dielectric substrate and thiol chemistry passivation could effectively reduce the interface traps and Coulomb impurities, leading to a significant improvement of device performances. Especially, metallic transport is observed at higher carrier density and low temperature. Moreover, through repairing sulfur vacancies, record high mobility is reached at room temperature(83 cm2V-1s-1) and low temperature(337 cm2V-1s-1). Furthermore, we develop a theoretical model for explaining charge transport in the monolayer WS2. Our work provides a viable route towards studying intrinsic charge transport in monolayer WS2 devices.

关键词： tungsten disulfide(WS2),transition metal dichalcogenides(TMDs),mobility,interface

来源：评论

学校读者我要写书评

暂无评论

Modeling Techniques for Graphene field-effect transistors

Modeling Techniques for Graphene field-effect transistors

引用

2015 International Conference on Communication Problem-Solving(ICCP)

作者： Haiyan Lu Yun Wu Shuai Huo Yuehang Xu Yuechan Kong Tangshen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute University of Electronic Science and Technology of China

ISBN: (纸本)9781467365451

This paper presents a hybrid-π equivalent circuit extract method for graphene field-effect transistors up to 66 GHz. Because the G-FET channel cannot be pinched off, the open and short structures are used to remove parasitic element of the pad. The intrinsic elements of the model parameters are extracted from measured S-parameters directly. The model is verified with experiments and simulations, and good agreements are observed. The model will provide some insights and guidance for the practical use of the GFETs and can be embedded in circuit simulation tools.

关键词： FET Modeling Techniques for Graphene field-effect transistors Graphene

来源：评论

学校读者我要写书评

暂无评论

Design of single crystal silicon based RF MEMS switch with high contact force 3

Design of single crystal silicon based RF MEMS switch with h...

引用

3rd Asia-Pacific Conference on Antennas and Propagation, APCAP 2014

作者： Di, Mei Jing, Wu YuanWei, Yu PeiRan, Zhang Jian, Zhu NanJing Electronic Devices Institute NanJing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory NanJing210016 China

ISBN: (纸本)9781479943548

A metal contact RF MEMS switch based on single crystal silicon is presented in this article. Performance of the switch is demonstrated numerically in simulations. The mN-level contact and release forces are achieved. Pull-in voltage is calculated to be 40V. 1.5mN contact force and 1.2mN release force are achieved when actuation voltage is 50V. The isolation and insertion loss are better than -30.8dB and -0.09dB respective between DC and 10GHz. The fabrication process is presented as well. © 2014 IEEE.

关键词： Silicon wafers

来源：评论

学校读者我要写书评

暂无评论

High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics

High-Performance Monolayer WS2 Field-effect Transistors on H...

引用

The 6th International Conference on Nanoscience and technology, China 2015 (第六届中国国际纳米科学技术会议)

作者： Yang Cui Run Xin Zhihao Yu Yiming Pan Zhun-Yong Ong Xiaoxu Wei Junzhuan Wang Yun Wu Tangsheng Chen Yi Shi Baigeng Wang Yong-Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand School of Physics Nanjing UniversityNanjing 210093P.R.China Institute of High Performance Computing 1 Fusionopolis Way138632Singapore Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D

关键词： tungsten disulfide (WS2) transition metal dichalcogenides (TMDs) mobility interface

来源：评论

学校读者我要写书评

暂无评论

Novel extraction method for small-signal equivalent circuit model of HEMTs based on vector fitting

Novel extraction method for small-signal equivalent circuit ...

引用

2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014

作者： Wu, Yongzhi Ren, Kun Liu, Jun Wei, Cheng Haiyan, Lu Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou310037 China Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9781479942466

A novel model method for III-V HEMTs small-signal model parameter extraction is presented in this work. All the model elements are directly derived from hot S-parameters, rather than cold S-parameters, by using vector fitting (VF) method The model renders excellent agreement with the measured and simulated data over 1 to 100 GHz, for a 2×150μm GaAs HEMT device manufactured in CETC-55 150nm GaAs pHEMT technology. © 2014 IEEE.

关键词： III-V semiconductors

来源：评论

学校读者我要写书评

暂无评论

Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2by Dielectric and Carrier Screening (Adv. Mater. 3/2016)

引用

Advanced Materials 2016年第3期28卷

作者： Zhihao Yu Zhun‐Yong Ong Yiming Pan Yang Cui Run Xin Yi Shi Baigeng Wang Yun Wu Tangsheng Chen Yong‐Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. China Institute of High Performance Computing 1 Fusionopolis Way Singapore 138632 Singapore National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing 210093 P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 P. R. China

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共19页 << < 8 9 10 11 12 13 14 15 16 17 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：