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检索条件"机构=Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory"

共 190 条记录，以下是131-140 订阅

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An improved through line de-embedding method with even-odd mode measurement

An improved through line de-embedding method with even-odd m...

引用

IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Oupeng Li Wei Cheng Lei Wang Haiyan Lu Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

This paper presents a new S-parameter matrix calculation based de-embedding methodology. In this method, a noval even-odd mode measurement is proposed to correct the error in traditional through line de-embedding methodology. The influence of the asymmetric input and output stub is canceled. A comparison of the different de-embedding methods for active device (0.7 μm InP DHBT) are performed up to 66 GHz, the results showed that the proposed method has good accuracy and suitable for millimeter-wave (mmWave).

关键词： Scattering parameters Silicon compounds Semiconductor device measurement Indium phosphide Periodic structures Transmission line measurements Probes

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A millimeter wave 11W GaN MMIC power amplifier

A millimeter wave 11W GaN MMIC power amplifier

引用

IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Xuming Yu Wei Hong Weibo Wang Hongqi Tao Chunjiang Ren State Key Laboratory of Millimeter Wave Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

ISBN: (纸本)9781479943531

A 11 W high power amplifier for millimeter wave application is reported in this paper. The monolithic three-stage amplifier has been realized using a 0.15 μm T-gate field plated AlGaN/GaN high electron mobility transistors (HEMTs) in a microstrip transmission line technology on 3-inch SiC substrate. Saturated output power of 40.5 dBm and peak power-added-efficiency of 20% were measured at 29 GHz with the pulsed DC supply voltage of 24 V. Across the 28-31 GHz range, the amplifier delivers output power above 39.3 dBm with power added efficiency over 15%.

关键词： Gallium nitride Power amplifiers HEMTs MODFETs MMICs Millimeter wave technology Microwave amplifiers

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W-band InP DHBT MMIC Power Amplifier

W-band InP DHBT MMIC Power Amplifier

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International Conference on Computational Problem-Solving (ICCP)

作者： Guohua Gu Lei Wang Weibo Wang Wei Cheng Yuan Wang Haiyan Lu Oupeng Li Jian Zhang Yong Zhang Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

ISBN: (纸本)9781479942442

In this paper, a monolithic W-band Power amplifier (PA) is presented by using 1μm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) technology. The PA is consisted by 2 stages 2×1μm and 3 stages 4×1μm emitter width transistors. The total circuit shows small signal gain is above 15dB from 90GHz to 96GHz, and the simulated saturation output power reaches 18.5dBm@94GHz. The chip area is only 1.61mm×1.03mm. This W-band power amplifier MMIC is now being fabricated in progress on the NEDI compound semiconductor process line.

关键词： Indium phosphide Power amplifiers DH-HEMTs MMICs Heterojunction bipolar transistors integrated circuit modeling

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An improved AgilentHBT model for InP DHBT

An improved AgilentHBT model for InP DHBT

引用

Asia-Pacific Conference on Microwave

作者： Oupeng Li Lei Wang Wei Cheng Haiyan Lu Guohua Gu Jian Zhang Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

In this paper, an improved InP/InGaAs DHBT large-signal model based on the AgilentHBT model is reported. The collector current model is modified for the consideration of hetero-junction effect, and especially, a dispersion current item is put forward and incorporated into the equivalent circuit. The proposed model is implemented by the use of symbolically-defined devices (SDD) in ADS software. The excellent fitting results in DC and s-parametmers indicate that the modified model has better accuracy compared to the conventional one.

关键词： Microwave circuits Microwave integrated circuits Microwave transistors Decision support systems Noise measurement Radiofrequency integrated circuits

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A large signal SDD model for InP DHBT

A large signal SDD model for InP DHBT

引用

International Conference on Computational Problem-Solving (ICCP)

作者： Oupeng Li Wei Cheng Lei Wang Haiyan Lu Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology Monolithic Integrated Circuits Modules Laboratory Nanjing P. R. China

ISBN: (纸本)9781479942442

In this paper, a accuracy large-signal model based on agilentHBT model for InP dou-ble heterojunction bipolar transistors (DHBTs) is implemented as symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena including the Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC and multi-bias small S parameters for InP DHBTs.

关键词： Mathematical model integrated circuit modeling Indium phosphide Heterojunction bipolar transistors DH-HEMTs Equations Junctions

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Low insertion loss GHz GaN SAW device fabricated on self-standing GaN substrate

Low insertion loss GHz GaN SAW device fabricated on self-sta...

引用

IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Jianjun Zhou Liang Li Haiyan Lu Cen Kong Yuechan Kong Tangsheng Chen Chen Chen Xiaoyu Wang Haodong Wu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China Key Laboratory of Modern Acoustics Nanjing University Nanjing P. R. China

ISBN: (纸本)9781479943531

A GHz SAW device with two face-to-face interdigitated transducers (IDTs) was fabricated on self-standing semi-insulating GaN substrate. Using an advanced e-beam lithographical techniques, the IDTs with 0.5μm wide fingers and spacing have been fabricated on self-standing GaN substrate. On wafer measurement of the S parameters have demonstrated the operation at approximately 2 GHz with 10dB insertion loss.

关键词： Gallium nitride Surface acoustic wave devices Substrates Insertion loss Loss measurement HEMTs MODFETs

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Observation of polarization pinning effect in PZT/AlGaN/GaN heterostructure

Observation of polarization pinning effect in PZT/AlGaN/GaN ...

引用

IEEE Conference on Electron Devices and Solid-State circuits

作者： Yuechan Kong Jianjun Zhou Tangsheng Chen Wenbo Luo Lanzhong Hao Huizhong Zeng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China State key laboratory of electronic thin films and integrated devices University of Electronics Science and Technology of China Chengdu P. R. China

ISBN: (纸本)9781479923366

PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) heterostructure is fabricated and characterized by C-V measurement. A distinct asymmetric shift of C-V curve is observed that when the up-sweep (from negative to positive) starting voltage increases from -10 V to -18 V, the C-V curve shifts positively with the threshold voltage varying from -2.4 V to 1.1 V, whereas the down-sweep (from positive to negative) C-V curve hardly move with different starting voltage. The field-history dependent polarization effect of ferroelectrics is involved into a self-consistent calculation, by which the nature of the asymmetric C-V curve shift is disclosed to be the polarization pinning effect of the underlying AlGaN layer. The results take an insight into the interface polarization coupling in GaN-based MFS structure for memory device applications.

关键词： Gallium nitride TV Capacitance-voltage characteristics

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A submicron InGaAs/InP double heterojunction bipolar transistor with ft and fmax of 280GHz

A submicron InGaAs/InP double heterojunction bipolar transis...

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Zhao, Yan Cheng, Wei Wang, Yuan Gao, Han Chao Lu, Hai Yan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781629933405

A submicron InGaAs/InP DHBT fabricated using triple mesa structure and BCB planarization technology is presented. All processes are on 3-inch wafers. The DHBT with emitter area of 0.7×10μm2 exhibits a current cutoff frequency ft and a maximum oscillation frequency fmax both of 280GHz. The breakdown voltage is more than 4V. The high speed InGaAs/InP DHBT with comparable high breakdown voltage is promising for voltage controlled oscillator (VCO) and mixer applications at W band or even higher frequencies. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Indium phosphide

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4.5kV SiC JBS diodes

4.5kV SiC JBS diodes

引用

2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Tao, Yong Hong Huang, Run Hua Chen, Gang Bai, Song Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm-3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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High breakdown voltage GaN HEMT device fabricated on self-standing GaN substrate

High breakdown voltage GaN HEMT device fabricated on self-st...

引用

2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Zhou, Jian Jun Li, Liang Lu, Hai Yan Kong, Ceng Kong, Yue Chan Chen, Tang Sheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHz&bullμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Aluminum gallium nitride

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