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IEEE International Conference on Communication Problem-Solving

作者： Xiao Li Oupeng Li Yan Sun Wei Cheng Lei Wang Ruimin Xu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute School of Electronic Engineering University of Electronic Science and Technology of China

ISBN: (纸本)9781467365451

A four-stage amplifier MMIC operating at G-Band (140-220GHz) is demonstrated in this letter. The amplifier utilizes a 0.5-um single emitter InP DHBT technology. The transistor exhibits collector current density of 2 mA/um~2, f_T of 250 GHz and f_(max) of 320 GHz at I_c = 12mA and V_(CE) = 1.5V. The chip size is 1mm×1.1mm. Measurements show that the small signal gain is above 3 dB over 149-180 GHz frequency band, and return loss is lower than -10 dB from 140 GHz to 153 GHz.

关键词： InP heterojunction bipolar transistor Amplifier Millimeterwave G-band monolithic microwave integrated circuit (MMIC)

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A 140-190 GHz Amplifier Based on 0.5-um InP DHBT Transistor

A 140-190 GHz Amplifier Based on 0.5-um InP DHBT Transistor

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2015 International Conference on Communication Problem-Solving(ICCP)

A four-stage amplifier MMIC operating at G-Band（140-220GHz） is demonstrated in this letter. The amplifier utilizes a 0.5-um single emitter InP DHBT technology. The transistor exhibits collector current density of 2 mA/um, f of 250 GHz and f of 320 GHz at I=12mA and V=1.5V. The chip size is 1mm×1.1mm. Measurements show that the small signal gain is above 3 dB over 149-180 GHz frequency band, and return loss is lower than-10 dB from 140 GHz to 153 GHz.

关键词： InP heterojunction bipolar transistor ampli-fier millimeterwave G-band monolithic microwave integrated circuit(MMIC)

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Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN Metal-Ferroelectric-Semiconductor Heterostructure

Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN M...

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2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)

作者： Chen Chen Jianjun Zhou Yuechan Kong Liang Li Fangshi Xue Jun Zhu Wenbo Luo Huizhong Zeng National Key Laboratory of Science and technology on Monolithic Integrated Circuits and Modules Nan State key lab of electronic thin films and integrated devices University of Electronics Science and

The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metalferroelectric semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmetrical shift of the C-V profile is observed that when swept positively, the C-V curve shifts to the right with increasing the negative starting voltage, while hardly move with different starting positive voltage when swept in the opposite direction. To understand this, a pinning effect model is developed and incorporated into selfconsistent calculation, with taking history-dependent electric field effect into account. Owing to the strong polarization of underlying AlGaN layer, the switchable polarization of ferroelectric is initially pinned at -1.55 uC/cm2 and does not change after positive bias operation. When increasing the negative sweeping voltage, the partially switched ferroelectric dipoles are increased, which results in the right-shift of the C-V curves, in agreement with the experiment.

关键词： Polarization Aluminum gallium nitride Gallium nitride Ferroelectric materials Capacitance-voltage characteristics Voltage integrated circuit technology Buffer layers Electric variables measurement Performance evaluation

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A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS technology 14

A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS T...

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14th International Conference on Microwave and Millimeter Wave technology, ICMMT 2022

作者： Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665467520

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be 3.5b3+5b. The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm2. © 2022 IEEE.

关键词： Electric power utilization

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A new on-wafer multiline thru-reflect-line (TRL) calibration standard design

A new on-wafer multiline thru-reflect-line (TRL) calibration...

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Haiyan Lu Zhijiang Zhou Chengwei Jianjun Zhou Tangshen Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing CHN Nanjing Electronic Device Institute Nanjing CHN Hangzhou Dianzi University

ISBN: (纸本)9781479943531

By using invert microstrip, a new on wafer multiline TRL calibration kits for THz measurement are designed in this paper. Our approach is based on the multi-frequency formulation of the vector network analyzer calibration problem. The calibration kits are designed covers a range of frequencies from 70 to 220 GHz. The simulator results are given in this paper.

关键词： Calibration Transmission line measurements Microstrip Measurement uncertainty Standards Power transmission lines Transistors

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A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC 35

A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...

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35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023

作者： Zheng, Yifei Yuan, Qing Song, Deyuan Ying, Yutao Zhu, Jing Sun, Weifeng Zhang, Long Li, Sheng Wang, Denggui Zhou, Jianjun Zhang, Sen He, Nailong National Asic System Engineering Research Center Southeast University Nanjing210096 China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China Wuxi Chipown Micro-electronics Limited Wuxi China Csmc Technologies Corporation Technology Development Department Wuxi China

ISBN: (纸本)9798350396829

monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high d VSdt noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1μm GaN-on-Silicon process and measured results were performed to verify the characteristics. © 2023 IEEE.

关键词： Gallium nitride

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RFIT 2019 Greetings from General Chair and General Co-Chairs

2019 IEEE International Symposium on Radio-Frequency Integra...

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2019 IEEE International Symposium on Radio-Frequency Integration technology, RFIT 2019 - Proceedings 2019年

作者： Hong, Wei Wang, Zhigong Sun, Lingling Zhang, Bing Sun, Xiaowei Southeast University China Hangzhou Dianzi University China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory China Shanghai Institute of Microsystems and Information Technology China

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Nondestructive visualization of graphene on Pt with methylene blue surface modification

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Science China Materials 2022年第10期65卷 2763-2770页

作者： He Kang Yanhui Zhang Yun Wu Shike Hu Jing Li Zhiying Chen Yanping Sui Shuang Wang Sunwen Zhao Runhan Xiao Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device InstituteNanjing 210016China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical *** was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface *** can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical *** addition,this characterization method causes no obvious damage to the Pt substrate and ***,it does not affect the recycling of the substrate or the subsequent characterization or application of *** study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.

关键词： graphene Pt nondestructive visualization surface modification methylene blue

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An Aging Small-signal Modeling Method of Microwave Transistors Using GA-ELM Neural Network

An Aging Small-signal Modeling Method of Microwave Transisto...

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Electronics Design Automation (ISEDA), International Symposium of

作者： Lin Cheng Hongliang Lu Xiuxiu Guo Silu Yan Wei Cheng Yuming Zhang School of Microelectronics Xidian University Xi'an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this paper, an aging small-signal S-parameters modeling method for microwave transistors is explored using a genetic algorithm (GA) to optimize the Extreme Learning Machine (ELM) neural network. A dual GA-ELM neural network architecture was used to simulate the fresh S-parameters of InP heterojunction bipolar transistor (HBT) devices and the degradation of S-parameters after accelerated aging, respectively. Good agreement was achieved between measured and predicted results of the fresh and aging S-parameters within a frequency range of 0.1 to 40 GHz.

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A monolithic AlGaN/GaN HEMT VCO using BST film varactor

A monolithic AlGaN/GaN HEMT VCO using BST film varactor

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Cen Kong Hui Li Shuwen Jiang Jianjun Zhou Xiaojian Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology Chengdu China

A monolithic AlGaN/GaN HEMT voltage controlled oscillator (VCO) using barium strontium titanate (BST) MIM varactor is reported first time. The BST thin film was fabricated by RF magnetron sputtering. The fabrication process is fully compatible with the standard GaN MMIC integrated process. An output power of 17dBm and the phase noise of -75dBc/Hz (at 100kHz) and -110dBc/Hz (at 1MHz) are obtained while the bias of the drain is 8V and BST varactor voltage is 0V. The VCO exhibits 500MHz tunable frequency bandwidth at the central frequency of 6.42GHz while BST varactor voltage changed from 0V to 20V.

关键词： Varactors Gallium nitride HEMTs Voltage-controlled oscillators Microwave oscillators MMICs Phase noise

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