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A 1.9-kV/2.61-m${\text{m}}\Omega\cdot$ cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V

IEEE Electron Device Letters

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IEEE Electron Device Letters 2018年第10期39卷 1548-1551页

作者： Tao Zhang Jincheng Zhang Hong Zhou Tangsheng Chen Kai Zhang Zhuangzhuang Hu Zhaoke Bian Kui Dang Yi Wang Li Zhang Jing Ning Peijun Ma Yue Hao Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi’an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on a silicon substrate with a low turn-ON voltage (V ON ) of 0.35 V and tungsten (W) as the anode. Non-field-plated lateral GaN SBDs with the anode-cathode distances (L AC ) of 6, 10, 15, 20, and 25 μm demonstrate the reverse breakdown voltages of 0.6, 1.1, 1.25, 1.5, and 1.9 kV with the differential specific ON-resistances (R ON , sp ) of 0.38, 0.72, 1.23, 1.87, and 2.61 mΩ·cm 2 , respectively. The power figure-of-merit (FOM) is calculated to be 1×10 3 , 1.7×10 3 , 1.3×10 3 , 1.2×10 3 , and 1.4×10 3 MW/cm 2 . To the best of our knowledge, this FOM of 1.7×10 3 MW/cm 2 is the highest among all the lateral GaN SBDs on a Si substrate. Combined with the ~10 8 current ON/OFF ratio at room temperature, the GaN SBD with the W anode shows a great promise for next-generation power electronics.

关键词： Gallium nitride Anodes Current density Silicon Wide band gap semiconductors Aluminum gallium nitride Schottky barriers

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Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes

Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes

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IEEE Electron Devices technology and Manufacturing Conference (EDTM)

作者： Hehe Gong Xinxin Yu Yang Xu Jianjun Zhou Fangfang Ren Shulin Gu Rong Zhang Jiandong Ye School of Electronic Science and Engineering Nanjing University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this work, vertical NiO/Ga2O3 heterojunction diodes (HJDs) have been demonstrated with the integrated SiNx/Al2O3 double-layered insulating field plate (FP) structure. With the optimal post annealing, the device per... 详细信息

In this work, vertical NiO/Ga₂O₃ heterojunction diodes (HJDs) have been demonstrated with the integrated SiN_x/Al₂O₃ double-layered insulating field plate (FP) structure. With the optimal post annealing, the device performance has been improved with a decreased differential specific on-resistance (R_on,sp), a decreased reverse leakage current density and the elimination of double barrier behavior in forward bias condition, which is due to the reduced interface defects produced by the plasma damage of fabricated process. Our work provides an optimized way for the heterojunction devices based on Ga₂O₃ material to solve the difficulty of p-type Ga₂O₃.

关键词： Performance evaluation Fabrication Electric potential Annealing Heterojunctions Plasmas Leakage currents

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A 0.33THz Schottky diode frequency doubler with 8% efficiency and 5.4mW output power

A 0.33THz Schottky diode frequency doubler with 8% efficienc...

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Changfei Yao Ming Zhou Yunsheng Luo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Jiangsu China Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute Nanjing Jiangsu China

ISBN: (纸本)9781479943531

A 0.33THz frequency doubler is realized with planar Schottky diodes, and the diode is mounted on 50 μm thick quartz substrate. The complete multiplying circuit is optimized and established in 3-D electromagnetic simulation suite. The doubler is self-bias and fixed-tuned. The highest tested multiplying efficiency is 8% and its corresponding output power is 5.4mW with input power of 68mW at 328GHz. The typical measured efficiency is 6% in frequency band 320-358GHz. To the authors' knowledge, these results are comparable to reported frequency doubler performance around 330GHz with integrated diode technology.

关键词： Schottky diodes Power generation Substrates Microwave circuits Electromagnetic waveguides integrated circuit modeling Gold

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10 Gb/s GaAs PHEMT high gain preamplifier for optical receivers

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第12期28卷 1902-1911页

作者： Jiao, Shilong Yang, Xianming Zhao, Liang Li, Hui Chen, Zhenlong Chen, Tangsheng Shao, Kai Ye, Yutang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A high gain cascade connected preamplifier for optical receivers is developed with 0.5 μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3 dB bandwidth of 10 GHz, with a small signal gain of around 9 dB. The post-stage distributed amplifier (DA) has a -3 dB bandwidth of close to 20 GHz, with a small signal gain of around 12 dB. As a whole, the cascade preamplifier has a measured small signal gain of 21.3 dB and a transimpedance of 55.3 dBΩ in a 50 n system. With a higher signal-to-noise ratio than that of the TIA and a markedly improved waveform distortion compared with that of the DA, the measured output eye diagram for 10 Gb/s NRZ pseudorandom binary sequence is clear and symmetric.

关键词： Optical receivers

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Analysis on the Effect of Laval Microchannel Structure in Si Interposer for GaN HEMTs Cooling

Analysis on the Effect of Laval Microchannel Structure in Si...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Miao Yu Jian Zhu Min Huang Hongze Zhang School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing University Nanjing China School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing University Nanjing China Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

The microfluid cooling is widely used in the thermal management for high power integration in 3D Si RF microsystem. The simple and efficient microfluid structure is essential in large area cooling for the module with multiple active devices integrated on silicon. A novel Laval microchannel structure was proposed in this paper, and it was simple to design and easy for process. The thermal and hydraulic characteristics of Laval microchannel were investigated and compared with the conventional straight microchannel and 2 kinds of common serpentine microchannels using FEM analysis. The results indicated that Laval microchannel had low flow resistance to maintain high pumping power and achieved the best cooling performance among different microchannel structures. And Laval structure can be effective to keep junction temperature below 150 °C which can provide the sufficient condition for GaN HEMTs device operating with high efficiency and good linearity. It presented remarkable cooling performance for GaN HEMTs cooling integrated on Si, showing excellent candidate structure for large area cooling in 3D Si RF microsystem.

关键词： Microchannels Gallium nitride Silicon HEMTs MODFETs Cooling Junctions

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Broadband modeling for InP DHBT over 0.2 – 220 GHz

Broadband modeling for InP DHBT over 0.2 – 220 GHz

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International Conference on Solid-State and integrated Circuit technology

作者： Zhijiang Zhou Jun Liu Lingling Sun Wei Cheng Haiyan Lu Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781479932849

Extraction and verification of small signal equivalent circuit for InP/InGaAs DHBT up to G-band (140 to 220 GHz) is presented in this paper. Based on Π-topology small-signal model, the model parameters are extracted from measured S-parameters directly. Analytical and approximation approach used in this paper allows reducing numbers of model parameters for low frequency analysis. In order to extend the model to higher frequencies, extrinsic parameters are determined using both analytical and optimization methods. The model is verified by comparing the modeled parameters to measured parameters. The investigation results show that the excellent agreements between the measured and simulated data are obtained in the frequency range of 0.2 to 220 GHz.

关键词： Abstracts Analytical models Calibration Scattering parameters Indium phosphide Microwave FET integrated circuits Microwave integrated circuits

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10 Gb/s GaAs PHEMT current mode transimpedance preamplifier for optical receiver

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第1期28卷 24-30页

作者： Jiao, Shilong Ye, Yutang Chen, Tangsheng Feng, Ou Jiang, Youquan Fan, Chao Li, Fuxiao School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A single power supply common-gate (CG) current mode transimpedance preamplifier (TIA) is developed with a 0.5 μm GaAs PHEMT process. The amplifier has a measured -3 dB bandwidth of 7.5 GHz and a transimpedance gain of 45 dBΩ. Both the input and output voltage standing wave ratios (VSWR) are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22 pA/√Hz, with an average value of 17.2 pA/√Hz. Having a timing jitter of 14 ps and eye amplitude of about 138 mV, the measured output eye diagram for 10 Gb/s NRZ pseudorandom binary sequence (PRBS) is clear and satisfactory.

关键词： Optical receivers

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An improved through line de-embedding method with even-odd mode measurement

An improved through line de-embedding method with even-odd m...

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Oupeng Li Wei Cheng Lei Wang Haiyan Lu Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

This paper presents a new S-parameter matrix calculation based de-embedding methodology. In this method, a noval even-odd mode measurement is proposed to correct the error in traditional through line de-embedding methodology. The influence of the asymmetric input and output stub is canceled. A comparison of the different de-embedding methods for active device (0.7 μm InP DHBT) are performed up to 66 GHz, the results showed that the proposed method has good accuracy and suitable for millimeter-wave (mmWave).

关键词： Scattering parameters Silicon compounds Semiconductor device measurement Indium phosphide Periodic structures Transmission line measurements Probes

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A millimeter wave 11W GaN MMIC power amplifier

A millimeter wave 11W GaN MMIC power amplifier

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Xuming Yu Wei Hong Weibo Wang Hongqi Tao Chunjiang Ren State Key Laboratory of Millimeter Wave Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

ISBN: (纸本)9781479943531

A 11 W high power amplifier for millimeter wave application is reported in this paper. The monolithic three-stage amplifier has been realized using a 0.15 μm T-gate field plated AlGaN/GaN high electron mobility transistors (HEMTs) in a microstrip transmission line technology on 3-inch SiC substrate. Saturated output power of 40.5 dBm and peak power-added-efficiency of 20% were measured at 29 GHz with the pulsed DC supply voltage of 24 V. Across the 28-31 GHz range, the amplifier delivers output power above 39.3 dBm with power added efficiency over 15%.

关键词： Gallium nitride Power amplifiers HEMTs MODFETs MMICs Millimeter wave technology Microwave amplifiers

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Numerical Study on Microjet Cooling Structure for GaN HEMTs Integration on Silicon

Numerical Study on Microjet Cooling Structure for GaN HEMTs ...

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International Conference on (ICEPT) Electronic Packaging technology

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

An analysis on the heat transfer feature of the microfluid cooling based on the microjet structure in the Si interposer for GaN HEMTs was investigated to meet the requirement of thermal management in RF microsystem integration. The microjet cooling structure in the Si interposer consists of 2 layers of microfluids forming the microjets in the bottom layer and separating in the top layer from 2 directions. The GaN HEMTs device is bonded on the Si interposer with the transistor gates above the microjets to utilize the high local heat transfer coefficient effectively. The distributions of temperature and the maximum pressure variations in the cooling structure with different size parameters at different flow rates were investigated using FEM analysis, and the optimum relations of dominant parameters were proposed to achieve excellent cooling performance in this paper. Therefore, a simplified function can be established to evaluate the heat transfer coefficient with the optimized size parameters. The model of a 48 W/mm 2 power density GaN HEMTs device integrated on the Si interposer with optimized microjet cooling structure was simulated. The result indicated that the thermal resistance of the integrated system is 0.96 K/W which is equal to the thermal resistance of the device bonded on a 3 mm thick copper plate directly. The study on the property of the microfluid cooling in Si interposer provided a useful support for RF microsystem heterogeneous integration for GaN high power device on silicon.

关键词： Cooling Gallium nitride HEMTs MODFETs Heat transfer Microchannels Silicon

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