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检索条件"机构=Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory"
190 条 记 录,以下是141-150 订阅
排序:
A 1.9-kV/2.61-m${\text{m}}\Omega\cdot$ cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V
IEEE Electron Device Letters
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IEEE Electron Device Letters 2018年 第10期39卷 1548-1551页
作者: Tao Zhang Jincheng Zhang Hong Zhou Tangsheng Chen Kai Zhang Zhuangzhuang Hu Zhaoke Bian Kui Dang Yi Wang Li Zhang Jing Ning Peijun Ma Yue Hao Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi’an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on a silicon substrate with a low turn-ON voltage (V ON ) of 0.35 V and tungsten (W) as the anode. Non-field-pla... 详细信息
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Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes
Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes
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IEEE Electron Devices technology and Manufacturing Conference (EDTM)
作者: Hehe Gong Xinxin Yu Yang Xu Jianjun Zhou Fangfang Ren Shulin Gu Rong Zhang Jiandong Ye School of Electronic Science and Engineering Nanjing University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
In this work, vertical NiO/Ga2O3 heterojunction diodes (HJDs) have been demonstrated with the integrated SiNx/Al2O3 double-layered insulating field plate (FP) structure. With the optimal post annealing, the device per... 详细信息
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A 0.33THz Schottky diode frequency doubler with 8% efficiency and 5.4mW output power
A 0.33THz Schottky diode frequency doubler with 8% efficienc...
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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)
作者: Changfei Yao Ming Zhou Yunsheng Luo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Jiangsu China Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute Nanjing Jiangsu China
A 0.33THz frequency doubler is realized with planar Schottky diodes, and the diode is mounted on 50 μm thick quartz substrate. The complete multiplying circuit is optimized and established in 3-D electromagnetic simu... 详细信息
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10 Gb/s GaAs PHEMT high gain preamplifier for optical receivers
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年 第12期28卷 1902-1911页
作者: Jiao, Shilong Yang, Xianming Zhao, Liang Li, Hui Chen, Zhenlong Chen, Tangsheng Shao, Kai Ye, Yutang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China
A high gain cascade connected preamplifier for optical receivers is developed with 0.5 μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3 dB b... 详细信息
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Analysis on the Effect of Laval Microchannel Structure in Si Interposer for GaN HEMTs Cooling
Analysis on the Effect of Laval Microchannel Structure in Si...
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International Conference on (ICEPT) Electronic Packaging technology
作者: Miao Yu Jian Zhu Min Huang Hongze Zhang School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing University Nanjing China School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing University Nanjing China Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
The microfluid cooling is widely used in the thermal management for high power integration in 3D Si RF microsystem. The simple and efficient microfluid structure is essential in large area cooling for the module with ... 详细信息
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Broadband modeling for InP DHBT over 0.2 – 220 GHz
Broadband modeling for InP DHBT over 0.2 – 220 GHz
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International Conference on Solid-State and integrated Circuit technology
作者: Zhijiang Zhou Jun Liu Lingling Sun Wei Cheng Haiyan Lu Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou China
Extraction and verification of small signal equivalent circuit for InP/InGaAs DHBT up to G-band (140 to 220 GHz) is presented in this paper. Based on Π-topology small-signal model, the model parameters are extracted ... 详细信息
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10 Gb/s GaAs PHEMT current mode transimpedance preamplifier for optical receiver
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年 第1期28卷 24-30页
作者: Jiao, Shilong Ye, Yutang Chen, Tangsheng Feng, Ou Jiang, Youquan Fan, Chao Li, Fuxiao School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China
A single power supply common-gate (CG) current mode transimpedance preamplifier (TIA) is developed with a 0.5 μm GaAs PHEMT process. The amplifier has a measured -3 dB bandwidth of 7.5 GHz and a transimpedance gain o... 详细信息
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An improved through line de-embedding method with even-odd mode measurement
An improved through line de-embedding method with even-odd m...
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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)
作者: Oupeng Li Wei Cheng Lei Wang Haiyan Lu Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China
This paper presents a new S-parameter matrix calculation based de-embedding methodology. In this method, a noval even-odd mode measurement is proposed to correct the error in traditional through line de-embedding meth... 详细信息
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A millimeter wave 11W GaN MMIC power amplifier
A millimeter wave 11W GaN MMIC power amplifier
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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)
作者: Xuming Yu Wei Hong Weibo Wang Hongqi Tao Chunjiang Ren State Key Laboratory of Millimeter Wave Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China
A 11 W high power amplifier for millimeter wave application is reported in this paper. The monolithic three-stage amplifier has been realized using a 0.15 μm T-gate field plated AlGaN/GaN high electron mobility trans... 详细信息
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Numerical Study on Microjet Cooling Structure for GaN HEMTs Integration on Silicon
Numerical Study on Microjet Cooling Structure for GaN HEMTs ...
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International Conference on (ICEPT) Electronic Packaging technology
作者: Miao Yu Jian Zhu Min Huang Hongze Zhang School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing University Nanjing China School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing University Nanjing China Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
An analysis on the heat transfer feature of the microfluid cooling based on the microjet structure in the Si interposer for GaN HEMTs was investigated to meet the requirement of thermal management in RF microsystem in... 详细信息
来源: 评论