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2012 International Conference on Microwave and Millimeter Wave technology, ICMMT 2012

作者： Li, Hui Kong, Cen Chen, Xiaojian Wang, Weibo Zhou, Jianjun Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 China

ISBN: (纸本)9781467321839

A novel DC Magnetic Field modulated doubly balanced monolithic mixer consisting of NiFe-SiOx magnetic thin film spiral transformer-baluns is presented first time. The -3dB bandwidth of the mixer from original L/S-band (1.3-3GHz) was modulated to L/C-band (1.4-5.5GHz) while a DC magnetic field was applied. Besides, the conversion loss of the mixer was improved by 1dB decreasion at the same time. The fabrication process of the mixer was fully compatible with standard monolithic microwave integrated circuit (MMIC) process. © 2012 IEEE.

关键词： Silicon compounds

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Photoluminescence investigation on highly p^+ -doped GaAs_(1-y)Sb_y(y<0.3)

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Science China(Technological Sciences) 2012年第11期55卷 3200-3203页

作者： GAO HanChao YIN ZhiJun CHENG Wei LI ZhongHui XIE ZiLi School of Electronic Science and Engineering Key Laboratory of Advanced Photonic and Electronic MaterialsNanjing UniversityNanjing 210093China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

Photoluminescence properties of highly p＋-doped GaASl_ySby are investigated. Band gap narrowing （BGN） effect is considered for heavily doped GaAs1_ySby epilayers. Band-gap Eg（GaAsl_ySby）=l.25y2-1.95y＋1.519 is obtained through fitting band-gap energy obtained by PL spectra from 35 to 300 K. Fermi level （El） and full width at half maximum （FWHM） of photolumines- cence increase with antimony mole fraction. The increase of Fermi level is attributed to hole mass of GaAsl_ySby decrease which is resulted from antimony composition increase. The increase of Fermi level means that more electrons participate in in- direct transition to result in FWHM increases.

关键词： molecular beam epitaxy photoluminescence semiconducting III-V materials

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Millimeter-wave design and fabrication of GaAs micromachined patch antenna

Millimeter-wave design and fabrication of GaAs micromachined...

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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Pan, Li-Na Jia, Shi-Xing Hou, Fang Zhu, Jian Yu, Yuan-Wei Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

ISBN: (纸本)9781467309028

A patch antenna at Ka-band frequency based on GaAs micromachined technologies is presented in this paper. The antenna fabricated on 300μm-thick GaAs substrate with a cavity etched in it produces a low effective dielectric region around the patch leading to improvement of bandwidth and radiation. The bandwidth of 4.1%, gain of 7.27dB and radiation efficiency of 79.5% at 36.3GHz have been simulated. The experimental results show that the bandwidth is 4.4% at 36.29GHz. © 2012 IEEE.

关键词： MEMS

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Investigation of millimeter-wave GaN HEMTs and a quick small-signal modeling method

Investigation of millimeter-wave GaN HEMTs and a quick small...

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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Zhong, Zheng Guo, Yong-Xin Zhou, Jianjun Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore Singapore

ISBN: (纸本)9781467309028

Recently, wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to RF/microwave transmitters for communications and radar systems. Of the various wide bandgap materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to investigate the status of updated GaN HEMTs technology with a view of highlighting both the progress and prospects. Besides, a quick small-signal modeling method has been presented for instant MMIC designs. © 2012 IEEE.

关键词： Millimeter waves

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Two-terminal electroluminescence of AlGaN/GaN high electron mobility transistors

Two-terminal electroluminescence of AlGaN/GaN high electron ...

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2012 International Conference on Microwave and Millimeter Wave technology, ICMMT 2012

作者： Kong, Yuechan Ren, Chunjiang Dong, Xun Zhou, Jianjun Xue, Fangshi Chen, Tangsheng Li, Liang IEEE Conference Publishing Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781467321839

Electroluminescence (EL) characteristics from reverse-biased Schottky barrier diode are investigated on AlGaN/GaN high electron mobility transistors (HEMT) with different structures. Light emission from devices under high voltage or with high gate leakage current exhibit bluish or reddish color, suggesting different emission mechanism. No obvious EL is observed in AlGaN/GaN/AlGaN double heterostructure at high drain voltage near breakdown. 2D device simulation of the AlGaN/GaN HEMT at high drain voltage shows distinct separation of electrons and holes distribution, eliminating the possibility of direct band-to-band transitions. By comparing the EL image from front side and back side of the wafer, the manufacturing related problems as well as the location of material defects are detected. © 2012 IEEE.

关键词： Electroluminescence

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Scaling technologies for millimeter-wave GaN-HEMTs

Scaling technologies for millimeter-wave GaN-HEMTs

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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Dai, Yongsheng Zhou, Jianjun Chen, Jianfeng Han, Min Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China School of Electronic and Optical Engineer Nanjing University of Science and Technology China

ISBN: (纸本)9781467309028

GaN-HEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted for GaN-HEMTs and the correct topology derived such that simple scaling rules apply to the unit cell. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fngers and the gate width are derived to optimize the size of the device. © 2012 IEEE.

关键词： Millimeter waves

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Developing the Ka-band GaN Power HEMT devices

Developing the Ka-band GaN Power HEMT devices

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2012 5th Global Symposium on Millimeter-Waves(2012年第五届全球毫米波会议 GSMM 2012)

作者： J. J. Zhou X. Dong C. Kong Y. C. Kong C. J. Ren Z. H. Li T. S. Chen C. Chen B. Zhang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

High quality Al0.3Ga0.7N/GaN/Al0.04Ga0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using developed 0.25 urn self-aligned Tshaped gate technology, a 4.5 W/mm output power density and 28％ PAE were obtained in continues wave (CW) mode at 34GHz. To increase the frequency performance of the GaN HEMT devices, a 0.15 μm Yshaped gate technology was developed. By using this technology, the parasitic capacitance is effectively suppressed. The fT and fmax of the GaN HEMT device fabricated with the 0.15 μm Yshaped gate technologies were greatly improved and reached 80GHz and 110GHz, respectively. A 3.1 W/mm output power density and 26.3％ PAE were also obtained in CW mode at 34GHz.

关键词： Ka-band GaN Power HEMT

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Power GaN HEMT on Si Substrate with Al-Content Step-Graded AlGaN Transition Layers

Power GaN HEMT on Si Substrate with Al-Content Step-Graded A...

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第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Jinyu Ni Cen Kong Jianjun Zhou Xun Dong Zhonghui Li Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

A 1.9-μm-thick GaN high electron mobility transistors (HEMT) structure has been grown on 3-inch Si (111) substrate by metalorganic chemical vapor *** using an AIN buffer layer and two AI-content step-graded AIGaN transition layers and optimizing the growth conditions,the GaN HEMT structure shown excellent electrical properties with flat film surface and good GaN crystalline quality.A sheet resistance of 328 Ω/□□ and sheet electron density of 1155 × 1013 cm-2,resulting in an electron mobility of 1650 cm2/Vs,was measured on the GaN HEMT *** GaN HEMTs were successful fabricated on this structure.A maximum drain-gate breakdown voltage BVGmax of 320 V and a maximum drain current IDSmax of 2.2 A were obtained.

关键词： GaN Si substrate HEMT Power electronic device Transition Layers

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A technology-independent table-based model for advanced GaN Schottky barrier diodes

A technology-independent table-based model for advanced GaN ...

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Zheng Zhong Yong-Xin Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore

In this paper, a novel non-quasi-static table-based model has been developed for advanced Gallium Nitride (GaN) Schottky barrier diodes, which are widely used in current RF energy harvesting and wireless power transmission (WPT) applications. This novel table-based model can be simply built based on the measured S-parameters and I-V characteristics of these GaN diodes. In contrast with many complicated traditional models, this technology-independent modeling method includes no ambiguous curve fitting and de-embedding processes. Furthermore, this large-signal model is theoretically suitable for all kinds of diodes and could be easily imported into the computer-aided design (CAD) software. To verify its accuracy, measured and modeled results of different kinds of GaN diodes are compared and excellent agreement has been obtained.

关键词： Decision support systems Radio frequency

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High power and high efficiency GaN HEMT with WN Schottky barrier

High power and high efficiency GaN HEMT with WN Schottky bar...

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Tangsheng Chen Jianjun Zhou Chunjiang Ren Zhonghui Li Shichang Zhong Bin Zhang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China

In this paper, a high power and high efficiency L/S-band GaN HEMT with tungsten nitride (WN) Schottky barrier is presented. By employing WN Schottky barrier, the reaction between the gate electrode and AlGaN layer is minimized and the Schottky barrier reveals good thermal stability. At 2.2 GHz, the developed GaN HEMT with 1.25 mm gate periphery delivers an output power density of 3.3W/mm with 75% maximum power-added efficiency (PAE). The accelerated life test shows that the mean time to failure (MTTF) of the developed devices is 1.8×10 7 hours at 150°C channel temperature with an activation energy of 1.5 e V. Output power more than 90 W and PAE about 70% are obtained with a 2×12 mm gate periphery packaged device between 1.14 GHz and 1.24 GHz.

关键词： Logic gates Gallium nitride HEMTs Schottky barriers Power generation Metals Semiconductor device measurement

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