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检索条件"机构=Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory"
190 条 记 录,以下是181-190 订阅
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Simulation of polarization pinning effect in PZT/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure
Simulation of polarization pinning effect in PZT/AlGaN/GaN m...
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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010
作者: Kong, Yuechan Zhou, Jianjun Xue, Fangshi Li, Liang Chen, Chen Luo, Wenbo Zeng, Huizhong Zhu, Jun National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China State Key Lab. of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Chengdu 610054 China
The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymme... 详细信息
来源: 评论
InAlN/AlN/GaN HEMTs on sapphire substrate
InAlN/AlN/GaN HEMTs on sapphire substrate
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: H. Q. Liu J. J. Zhou X. Dong T. S. Chen C. Chen National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing China
High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×10 13 cm -2 was measured in this... 详细信息
来源: 评论
The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high Dielectric Insulators
The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...
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2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)
作者: J. J. Zhou X. D H. Q. Liu T. S. Chen C. Chen National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China
High quality thin barrier InAlN/AIN/GaN heterostnicture was grown by metal-organic chemical vapor deposition (MOCVD). The metaMnsulatorsemiconductor (MIS) structure devices were fabricated with high dielectric constan... 详细信息
来源: 评论
Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN Metal-Ferroelectric-Semiconductor Heterostructure
Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN M...
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2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)
作者: Chen Chen Jianjun Zhou Yuechan Kong Liang Li Fangshi Xue Jun Zhu Wenbo Luo Huizhong Zeng National Key Laboratory of Science and technology on Monolithic Integrated Circuits and Modules Nan State key lab of electronic thin films and integrated devices University of Electronics Science and
The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metalferroelectric semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmet... 详细信息
来源: 评论
A compact transition structure integrated with DC feed filter for submillimeter wave application
A compact transition structure integrated with DC feed filte...
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2007 IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications, MAPE 2007
作者: Yuangen, Lin Yong, Zhang Ruimin, Xu Jun, Xie Shuyi, Wang School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules
A compact transition structure integrated with DC feed low pass filter for submillimeter wave application is designed and simulated. In this structure, the probe transition for suspended microstrip is in longitudinal ... 详细信息
来源: 评论
10 Gb/s GaAs PHEMT high gain preamplifier for optical receivers
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年 第12期28卷 1902-1911页
作者: Jiao, Shilong Yang, Xianming Zhao, Liang Li, Hui Chen, Zhenlong Chen, Tangsheng Shao, Kai Ye, Yutang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China
A high gain cascade connected preamplifier for optical receivers is developed with 0.5 μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3 dB b... 详细信息
来源: 评论
10 Gb/s GaAs PHEMT current mode transimpedance preamplifier for optical receiver
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年 第1期28卷 24-30页
作者: Jiao, Shilong Ye, Yutang Chen, Tangsheng Feng, Ou Jiang, Youquan Fan, Chao Li, Fuxiao School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China
A single power supply common-gate (CG) current mode transimpedance preamplifier (TIA) is developed with a 0.5 μm GaAs PHEMT process. The amplifier has a measured -3 dB bandwidth of 7.5 GHz and a transimpedance gain o... 详细信息
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monolithically integrated 850 nm optical receiver front end
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Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics 2007年 第3期27卷 350-355页
作者: Feng, Ou Feng, Zhong Yang, Lijie Jiao, Shilong Jiang, Youquan Chen, Tangsheng Li, Fuxiao Ye, Yutang Nanjing Electronic Devices Institute Nanjing 210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China School of Optoelectronic Inf. Uni. of Electronic Science and Technology of China Chengdu 610054 China
An 850 nm monolithically integrated optical receiver front end has been developed with 0.5 μm GaAs PHEMT process, mesa process and interconnected photolithography technology between mesa and plane, which comprises a ... 详细信息
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12 Gb/s GaAs PHEMT transimpedance preamplifier for optical receiver
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Tien Tzu Hsueh Pao/Acta Electronica Sinica 2006年 第6期34卷 1156-1158页
作者: Jiao, Shi-Long Feng, Wei Chen, Tang-Sheng Fan, Chao Li, Fu-Xiao Ye, Yu-Tang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China
A kind of single power supply transimpedance preamplifier (TIA) for optical receiver is developed, using 0.5 μm GaAs PHEMT process. The TIA has a measured -3 dB bandwidth of 9.5 GHz, with transimpedance gain of 43.5&... 详细信息
来源: 评论
COMPUTER-AIDED MANUFACTURING OF ADVANCED MICROWAVE modules
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INTERNATIONAL JOURNAL OF MICROWAVE AND MILLIMETER-WAVE COMPUTER-AIDED ENGINEERING 1991年 第1期1卷 90-111页
作者: PAVIO, AM PAVIO, JS CHAPMAN, JE BOGGAN, GH Texas Instruments Incorporated P.O. Box 655474 Dallas. Texas 75265 Jeanne Pavio is the Manager of the Microwave Advanced Packaging Group at Texas Instruments where she has been cmployed since 1980. She received the BA degree in 1971 and the MS in 1972 both from the University of Connecticut. Her experience base has included the fabrication and assembly of thick and thin film hybrids. At the Texas Instruments Hybrid Microelectronics Laboratory Jeanne implemented nitrogenfireable thick film for ceramic application in surface-mount technology and hybrids. For the last six years she has focused on the automated assembly and packaging of GaAs Monolithic Microwave Integrated Circuits and devices. This has encompassed development of fluxless furnace reflow and void-free vacuum reflow of GaAs components as well as development of automated wirebonding to GaAs Microwave Hybrids. She was instrumental in directly applying this technology to active phased array module production. Her efforts presently involve the implementation of high-volume techniques and automation for insertion of MMIC technology in a cost-effective highvolume environment. She has authored numerous papers involving hybrid fabrication and assembly technology and in particular involving automated assembly and packaging of GaAs MMIC devices. James E. Chapman Jr. was born in Dallas Texas in 1943. He received the BS and MS degrees in Electrical Engineering from Southern Methodist University (SMU) in 1966 and 1968 respectively. During this time he was associated with the Semiconductor Group of Texas Instruments Incorporated as an undergraduate engineering cooperative student working with various silicon products and processes. Mr. Chapman is currently a Senior Member of the Technical Staff assigned to the Microwave Technology and Products Division of the Defense Systems and Electronics Group. In this position he is currently technical director of the Technology Development for Solid-state Phased-Arrays (TDSSPA) Program. This program is a task-ordere
The application of computer-aided manufacturing (CAM) techniques to the assembly and test of a low-cost, high-volume X-band Radar T/R module will be investigated by highlighting the differences between low frequency a... 详细信息
来源: 评论