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A High Power 320–356GHz Frequency Multipliers with Schottky Diodes

Chinese Journal of Electronics 2016年第5期25卷 986-990页

作者： YAO Changfei ZHOU Ming LUO Yunsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute(NEDI) Department of Microwave and Millimeter Wave Modules NEDI

A 320–356GHz fixed-tuned frequency doubler is realized with discrete Schottky diodes mounted on 50μm thick quartz substrate. Influence of circuit channel width and thermal dissipation of the diode junctions are discussed for high multiplying efficiency. The doubler circuit is flip-chip mounted on gold electroplated oxygenfree copper film for grounding of RF and DC signals, and better thermal transportation. The whole multiplying circuit is optimized and established in Computer simulation technology(CST) suite. The highest measured multiplying efficiency is 8.0% and its output power is 5.4mW at 328 GHz. The measured typical output power is 4.0mW in 320–356GHz.

关键词： Schottky diode Frequency doubler Efficiency Thermal dissipation

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Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures

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Chinese Physics Letters 2010年第3期27卷 251-253页

作者：董逊李忠辉李哲洋周建军李亮李赟张岚许晓军徐轩韩春林 National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016

InAlN/GaN heterojunction structures are grown on two-inch c-face（0001） sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to improve the electrical properties. The lowest sheet resistance of 359 Ω/sq and the highest room-temperature two-dimensional electron gas （2DEG） mobility of 1051 cm2 V-1s-1 is obtained in the structure with AlN thickness of 1.3 nm. The structure with AlN thickness of 2 nm exhibits the highest 2DEG concentration of 1.84×1013 cm-2. The sample with an AlGaN interlayer gives a smoother surface morphology compared to the one using an AlN interlayer, indicating potential applications of this technique in device fabrication.

关键词： Condensed matter: electrical magnetic and optical Semiconductors Surfaces interfaces and thin films

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High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_(max)=256 GHz and BV_(CEO)= 8.3 V

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Journal of Semiconductors 2012年第1期33卷 56-58页

作者： Cheng Wei Zhao Yan Gao Hanchao Chen Chen Yang Naibin Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016China

An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1×15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BVcEo ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.

关键词： InP double heterojunction bipolar transistor planarization

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A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

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Chinese Physics B 2016年第5期25卷 448-452页

作者：李欧鹏张勇徐锐敏程伟王元牛斌陆海燕 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor（DHBT）. An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.

关键词： terahertz amplifier InP double heterojunction bipolar transistor inverted microstrip line monolithic integrated circuit

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A 220 GHz dynamic frequency divider in 0.5μm InP DHBT technology

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Journal of Semiconductors 2017年第5期38卷 82-87页

作者： Wei Cheng Youtao Zhang Yuan Wang Bin Niu Haiyan Lu Long Chang Junling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A high performance 3 inch 0.5 μm InP DHBT technology with three interconnecting layers has been *** epitaxial layer structure and geometry parameters of the device were carefully studied to get the required *** 0.5 × 5 μm^2 InP DHBTs demonstrated ft = 350 GHz,f（max） = 532 GHz and BV（CEO） = 4.8 V,which were modeled using Agilent-IIBT large signal *** a benchmark circuit,a dynamic frequency divider operating from 110 to 220 GHz has been designed,fabricated and measured with this *** ultra-high-speed 0.5 μm InP DHBT technology offers a combination of ultra-high-speed and high breakdown voltage,which makes it an ideal candidate for next generation 100 GHz＋ mixed signal integrated circuits.

关键词： InP heterojunction bipolar transistor dynamic frequency divider

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Millimeter-wave fixed-tuned subharmonic mixers with planar Schottky diodes

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Journal of Semiconductors 2012年第11期33卷 95-99页

作者：姚常飞周明罗运生王毅刚许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

Two different frequency bandwidth subharmonic mixers（SHM） using planar Schottky mixing diodes are discussed and ***-wave analysis is carried out to find the optimum diode embedding impedances with a lumped port for modeling the nonlinear *** SHM circuit is divided into several different parts and each part is optimized using the calculated diode *** divided parts are then combined and optimized *** exported S-parameter files of the global circuit are used for conversion loss（CL） *** the 150 GHz SHM,the lowest measured CL is 10.7 dB at 153 GHz,and typical CL is 12.5 dB in the frequency range of 135-165 *** lowest measured CL of the 180 GHz SHM is 5.8 dB at 240 GHz,and typical CL is 13.5 dB and 11.5 dB in the frequency range of 165-200 GHz and 210-240 GHz,respectively.

关键词： millimeter wave planar Schottky diodes subharmonic mixer conversion losses

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Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes

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Journal of Semiconductors 2015年第6期36卷 105-109页

作者：姚常飞周明罗运生许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

Two broadband detectors at W-band and D-band are analyzed and designed with low barrier Schottky diodes. The input circuit of the detectors is realized by low and high impedance microstrip lines, and their output circuit is composed of a radio frequency （RF） bandstop filter and a tuning line for optimum reflection phase of the RF signal. S-parameters of the complete circuit are exported to a circuit simulator for voltage sensitivity analysis. For the W band detectors, the highest measured voltage sensitivity is 11800 mV/mW at 100 GHz, and the sensitivity is higher than 2000 mV/mW in 80-104 GHz. Measured tangential sensitivity （TSS） is higher than -38 dBm, and its linearity is superior than 0.99992 at 95 GHz. For the D band detector, the highest measured voltage sensitivity is 1600 mV/mW, and the typical sensitivity is 600 mV/mW in 110-170 GHz. TSS is higher than -29 dBm, and its linearity is superior than 0.99961 at 150 GHz.

关键词： millimeter wave zero bias Schottky diode detector voltage sensitivity

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W-band high output power Schottky diode doublers with quartz substrate

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Journal of Semiconductors 2013年第12期34卷 77-81页

作者：姚常飞周明罗运生李姣许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the E-plane waveguide to strip transitions, input and output matching networks, and passive diode parts are analyzed by using electromagnetic simulators, and the different parts are then combined and optimized together. The exported S-parameters of the doubler circuit are used for multiply efficiency analysis. The highest measured output power is 29.5 mW at 80 GHz and higher than 15 mW in 76-94 GHz. The highest measured efficiency is 11.5% at 92.5 GHz, and the typical value is 6.0% in 70-100 GHz.

关键词： high output power frequency doubler planar Schottky diode efficiency

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Capacitance-voltage characteristic of Ga- and N-polar AlGaN/GaN HEMTs

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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年第5-6期13卷 317-320页

作者： Peng, Daqing Li, Zhonghui Li, Chuanhao Zhang, Dongguo Li, Liang Dong, Xun Pan, Lei Luo, Weike Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

Ga- and N-polar AlGaN/GaN HEMTs were designed and epitaxially grown on Si- and C-face SiC substrates by MOCVD. The Capacitance-voltage characteristics of the two structures were investigated by C-V profile and drift-diffusion simulations. The N-polar structure shows double channels, while the electron concentration in the second channel is one order of magnitude lower than that in the first channel. Energy band diagrams and charge distributions were studied. The second channel is formed in AlN/AlGaN interface with electrons spilling over from the first channel when adequate negative voltage was applied on the schottky contact. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Silicon carbide

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Design and fabrication of a 3.3 kV 4H-SiC MOSFET

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Journal of Semiconductors 2015年第9期36卷 54-57页

作者：黄润华陶永洪柏松陈刚汪玲刘奥卫能李赟赵志飞 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structure of active area. The n-type epilayer is 33μm thick with a doping of 2.5 × 10^15 cm-3. The devices were fabricated with a floating guard ring edge termination. The drain current 1d= 5 A at Vg = 20 V, corresponding to vd = 2.5 v.

关键词： 4H-SiC MOSFET interface state

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