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4th International Conference on Mechanical and Electrical technology, ICMET 2012

作者： Chen, Gang Song, Xiaofeng Bai, Song Li, Li Li, Yun Chen, Zheng Wang, Wen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783037855102

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with lift-off trenched and implanted method. Its blocking voltage exceeds 1300V at gate bias VG = -6V and forward drain current is in excess of 5A at gate bias VG = 3V and drain bias VD = 3V. The SiC VJFET device's current density is 240A/cm2 at VG= 3V and VD = 3V, with related specific on-resistance 8.9mΩ·cm2. Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance and the bonding spun gold. The specific on-resistance can be further reduced by improving the doping concentration of SiC channel epilayer and the device's ohmic contact. © (2012) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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On-chip integrated inductors with NiFe-SiOx magnetic thin films on GaN 4th

On-chip integrated inductors with NiFe-SiOx magnetic thin fi...

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4th International Conference on Electronics, Communications and Networks, CECNet2014

作者： Kong, Cen Zhou, Jianjun Li, Hui Lu, Haiyan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781138028302

Fabrication, characterization, and modeling of on-chip integrated inductors with magnetic thin film (NiFe-SiOX) on sapphire-based GaN substrate was reported. The fabrication processes were compatible with the conventional GaN-based MMIC process. On-wafer measured results showed that an additional resonant absorption happened in the inductors with magnetic films at lower frequencies. An improved equivalent circuit model that takes into account magnetic absorption was developed for characterizing the phenomenon and good fitting results were acquired up to 11.6 GHz. © 2015 Taylor & Francis Group, London.

关键词： III-V semiconductors

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A submicron InGaAs/InP double heterojunction bipolar transistor with ft and fmax of 280GHz

A submicron InGaAs/InP double heterojunction bipolar transis...

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Zhao, Yan Cheng, Wei Wang, Yuan Gao, Han Chao Lu, Hai Yan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781629933405

A submicron InGaAs/InP DHBT fabricated using triple mesa structure and BCB planarization technology is presented. All processes are on 3-inch wafers. The DHBT with emitter area of 0.7×10μm2 exhibits a current cutoff frequency ft and a maximum oscillation frequency fmax both of 280GHz. The breakdown voltage is more than 4V. The high speed InGaAs/InP DHBT with comparable high breakdown voltage is promising for voltage controlled oscillator (VCO) and mixer applications at W band or even higher frequencies. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Indium phosphide

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Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

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Chinese Physics Letters 2015年第7期32卷 175-178页

作者：牛斌王元程伟谢自力陆海燕常龙谢俊领 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093

A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common base configuration is compared with common emitter configuration, and shows a smaller K factor at high frequency span, indicating a larger breakpoint frequency of maximum stable gain/maximum available gain （MSG/MAG） and thus a higher gain near the cut-off frequency, which is useful in THz amplifier design.

关键词： InP InGaAs Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

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High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer

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Journal of Semiconductors 2016年第6期37卷 112-115页

作者：高涛徐锐敏张凯孔月婵周建军孔岑郁鑫鑫董迅陈堂胜 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China (UESTC) Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors（MOS-HEMTs） by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_（1-x）O_3/Al_2O_3 stack（x≈0.33） grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier *** enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique,delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/*** balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.

关键词： AlGaN/GaN enhancement-mode（E-mode） stack gate dielectrics atomic layer deposition（ALD）

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Developing the Ka-band GaN power HEMT devices

Developing the Ka-band GaN power HEMT devices

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2012 5th Global Symposium on Millimeter-Waves, GSMM 2012

作者： Zhou, J.J. Dong, X. Kong, C. Kong, Y.C. Ren, C.J. Li, Z.H. Chen, T.S. Chen, C. Zhang, B. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781467313032

High quality Al0.3Ga0.7N/GaN/Al0.04Ga 0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using developed 0.25 μm self-aligned T-shaped gate technology, a 4.5 W/mm output power density and 28% PAE were obtained in continues wave (CW) mode at 34GHz. To increase the frequency performance of the GaN HEMT devices, a 0.15 μm Y-shaped gate technology was developed. By using this technology, the parasitic capacitance is effectively suppressed. The fT and fmax of the GaN HEMT device fabricated with the 0.15 μm Y-shaped gate technologies were greatly improved and reached 80GHz and 110GHz, respectively. A 3.1 W/mm output power density and 26.3% PAE were also obtained in CW mode at 34GHz. © 2012 IEEE.

关键词： III-V semiconductors

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The research on mm-wave power amplifier MMIC

The research on mm-wave power amplifier MMIC

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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Zhang, Bin Bai, Song Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781467309028

In this paper, we analyzed the technology of mm-wave power amplifier MMIC. We developed mm-wave GaAs pHEMT with a power density of 0.6W/mm at 35GHz. A fully monolithic 4-stage 4W mm-wave power amplifier was designed and fabricated The MMIC has an 8.96mm gate periphery on the output stage. Performance achieved was 24dB gain from 33-37GHz with a peak power of >4. 5W and PAE of 23%. © 2012 IEEE.

关键词： Power amplifiers

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Low surface roughness gaas/si thin-film deposition using three-step growth method in mbe

Low surface roughness gaas/si thin-film deposition using thr...

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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2019

作者： Wei, Wang Ben, Ma Hanchao, Gao Hailong, Yu Zhonghui, Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9783035736427

Epitaxial GaAs-on-Si is an ideal material system for studying the physics of mismatched heteroepitaxy of a polar semiconductor layer grown on a non-polar substrate like silicon. Understanding and optimization of the initial nucleation of GaAs on silicon is the most crucial step in the success of GaAs/Si heteroepitaxy. Molecular beam epitaxy (MBE) technique has been used to deposit hetero-epitaxial GaAs thin-film on off-angle Si (100) substrate using the three-step growth method. After optimizing the growth parameters of low temperature (LT) buffer layer and high temperature (HT) epilayer, XRD analyses were performed. Characterization results of the GaAs (004) films which were not subjected to annealing, show a full-width half maximum (FWHM) of 760.1 arc sec and a root mean square (RMS) surface roughness of lower than 1 nm for a scanning area of 10 μm × 10 μm. © 2020 Trans Tech Publications Ltd, Switzerland.

关键词： Molecular beam epitaxy

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100 nm Gate-Length AlGaN/GaN FinFETs with High Linearity of Gm and fT/fmax 10

100 nm Gate-Length AlGaN/GaN FinFETs with High Linearity of ...

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10th International Conference on Microwave and Millimeter Wave technology, ICMMT 2018

作者： Zhang, K. Zhu, G.R. Kong, Y.C. Chen, T.S. Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9781538624166

We report excellent dc and RF performance of high-linearity AIGaN/GaN FinFETs with 100 nm T-gate. Besides a high fT of 65 GHz enabled by scaled gate length, good linearity characteristics of Gm and fT/fmax are demonstrated. Loadpull measurements show that the proposed FinFETs achieve a maximum Pout of 2.98 W/mm with an associated PAE of 64% at 4 GHz and Vd=10V, At 18 GHz, Pout and PAE turn out to 2.73 W/mm and 48%, respectively. To the best of our knowledge, this is the first demonstration of high-linearity GaN FinFETs which operate at Ku-band. © 2018 IEEE.

关键词： Gallium nitride

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4.5kV SiC JBS diodes

4.5kV SiC JBS diodes

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Tao, Yong Hong Huang, Run Hua Chen, Gang Bai, Song Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm-3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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