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检索条件"机构=Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory"
190 条 记 录,以下是31-40 订阅
排序:
Threshold Voltage Stability Enhancing technology for p-GaN HEMTs Using Hybrid Gate Structure
IEEE Electron Device Letters
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IEEE Electron Device Letters 2022年 1-1页
作者: Zhang, Chi Li, Mingfei Li, Sheng Liu, Siyang Wang, Denggui Lu, Weihao Ma, Yanfeng Liu, Mengli Wei, Jiaxing Zhang, Long Zhou, Jianjun Bai, Song Sun, Weifeng National ASIC System Engineering Research Centre Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing Electronic Devices Institute Nanjing China
A novel hybrid gate p-GaN power high-electron mobility transistor (Hyb-HEMT) technology is proposed in this work to effectively enhance threshold voltage (Vth) stability without significant gate leakage current (Igss)... 详细信息
来源: 评论
A 14-22GHz monolithic Double-Balanced Passive Mixer
A 14-22GHz Monolithic Double-Balanced Passive Mixer
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Hu Zhang Lei Yang Sai sai Jing Yufeng Guo Hao Gao Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Silicon Austria Labs Linz Austria Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China
In this paper, a passive double-balanced mixer operating at 14-22GHz is designed based on the $0.15_{5}\mathrm{m}$ pHEMT GaAs process provided by WIN Semiconductor. The RF/LO frequency of the mixer is 14GHz-22GHz, a... 详细信息
来源: 评论
Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes
Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes
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IEEE Electron Devices technology and Manufacturing Conference (EDTM)
作者: Hehe Gong Xinxin Yu Yang Xu Jianjun Zhou Fangfang Ren Shulin Gu Rong Zhang Jiandong Ye School of Electronic Science and Engineering Nanjing University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
In this work, vertical NiO/Ga2O3 heterojunction diodes (HJDs) have been demonstrated with the integrated SiNx/Al2O3 double-layered insulating field plate (FP) structure. With the optimal post annealing, the device per... 详细信息
来源: 评论
Transient simulation for the thermal design optimization of pulse operated AlGaN/GaN HEMTs
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Micromachines 2020年 第1期11卷 76-76页
作者: Guo, Huaixin Chen, Tangsheng Shi, Shang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility... 详细信息
来源: 评论
Bright photon-pair source based on a silicon dual-Mach-Zehnder microring
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Science China(Physics,Mechanics & Astronomy) 2020年 第2期63卷 3-6页
作者: Chao Wu YingWen Liu XiaoWen Gu XinXin Yu YueChan Kong Yang Wang XiaoGang Qiang JunJie Wu ZhiHong Zhu XueJun Yang Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China
Single photons and photon pairs are typically generated by spontaneous parametric down conversion or quantum dots;however,spontaneous four-wave mixing(SFWM)in silicon microring resonators[1]is also an appealing source... 详细信息
来源: 评论
Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode
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Chinese Physics B 2019年 第2期28卷 400-405页
作者: Jin-Lan Li Yun Li Ling Wang Yue Xu Feng Yan Ping Han Xiao-Li Ji College of Electronic Science and Engineering Nanjing University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Electronic Devices Institute College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications
In this paper, we investigate the influence of deep level defects on the electrical properties of Ni/4H-SiC Schottky diodes by analyzing device current-voltage(I-V) characteristics and deep-level transient spectra(DLT... 详细信息
来源: 评论
0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process  17
0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Pr...
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17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020
作者: Huang, Wei Wang, Suyuan Liu, Zhu Zhang, Junyun Huang, Nianning Wang, Xinqiang Chen, Tangsheng Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China Peking University State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Beijing100871 China
The resolution enhancement lithography assisted by chemical shrink (RELACS) is presented to increase the resolution of the i-line lithography. We have succeeded in developing an advanced i-line lithography process bas... 详细信息
来源: 评论
A 20GSps Broadband Sigma-Delta ADC in InP DHBT technology
A 20GSps Broadband Sigma-Delta ADC in InP DHBT Technology
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Yang Wang Kun Liu Chunlin Han Youtao Zhang Xiaopeng Li Lei Yang Yufeng Guo Yi Zhang Nanjing Vocational University of Industry Technology Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China State Key Laboratory of Millimeter Waves Nanjing China
This paper presents a continuous time ultra-high speed broadband $\Sigma-\Delta$ analog-to-digital converter (ADC) with a clock sampling rate of 20 GS/s based on 0.7 $\boldsymbol{\mu}\mathbf{m}\ \mathbf{InP}$ DHBT... 详细信息
来源: 评论
A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS technology
A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS T...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Yi Zhang Yaqin Liu Hongliang Xia Lei Yang Yang Wang Youtao Zhang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China
Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture ... 详细信息
来源: 评论
Efficient immersion cooling for electronic devices based on multi-physics field coupling
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International Journal of Thermal Sciences 2025年 215卷
作者: Fan, Chengcheng Yang, Ruixue Guo, Huaixin Jiang, Haitao Zhang, Chengbin Chen, Yongping Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions Suzhou University of Science and Technology Jiangsu Suzhou215009 China School of Energy and Environment Southeast University Jiangsu Nanjing210096 China Advanced Ocean Institute of Southeast University Jiangsu Nantong226019 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Jiangsu Nanjing210096 China China Electronics Technology Group Corporation 38th Research Institute Anhui Hefei230031 China
Efficient cooling of high heat-flux electronic devices involving multi-physics field coupling has become a key challenge. To address these challenges, this paper establishes a multi-physics field coupling heat-transfe... 详细信息
来源: 评论