检索结果-内蒙古大学图书馆

Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL)

作者： Yan Sun Shaobing Wu Haiyan Lu Yuechan Kong Tangsheng Chen Zhonghui Li Qingsheng Zeng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Nanjing University of Aeronautics and Astronautics China

ISBN: (数字)9781728153049

ISBN: (纸本)9781728153056

Notice of Violation of IEEE Publication Principles "A 220GHz GaN HEMT Power Amplifier" by Yan Sun, Shaobing Wu, Haiyan Lu, Yuechan Kong, Tangsheng Chen, Zhonghui Li, Qingsheng Zeng in the Proceedings of the Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall), December 2019, pp. 2978-2981 After careful and considered review of the content and authorship of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE's Publication Principles. This paper copied content from the papers cited below. The original content was copied without attribution (including appropriate references to the original authors and/or paper titles) and without permission. "A Beyond 110 GHz GaN Cascode Low-Noise Amplifier with 20.3 dBm Output Power" by Rainer Weber, Maciej Cwiklinski, Sandrine Wagner, Roger Lozar, Hermann Massler, Peter Bruckner, Rudiger Quay in the Proceedings of the IEEE/MTT-S International Microwave Symposium (IMS), June 2018, pp. 1499-1502 "190-GHz G-Band GaN Amplifier MMICs with 40GHz of Bandwidth" by Maciej Cwiklinski, Peter Bruckner, Stefano Leone, Christian Friesicke, Roger Lozar, Hermann Massler, Rudiger Quay, and Oliver Ambacher in the Proceedings of the IEEE/MTT-S International Microwave Symposium (IMS), June 2019, pp. 1257???1260 In this paper, we present the first millimeter-wave GaN HEMT monolithic integrated circuit (MMIC) amplifier with an operating frequency at 220 GHz. This MMIC has a small-signal gain well above 11 dB at 222 GHz. Moreover, the use of gallium nitride technology allows for achieving state-of-the-art saturated output power, up to 14dBm at 222 GHz. To our knowledge, the measured gain and output power levels are the best among any of the GaN MMICs beyond 200 GHz reported to date.

关键词：

来源：评论

学校读者我要写书评

暂无评论

RFIT 2019 Greetings from General Chair and General Co-Chairs

2019 IEEE International Symposium on Radio-Frequency Integra...

引用

2019 IEEE International Symposium on Radio-Frequency Integration technology, RFIT 2019 - Proceedings 2019年

作者： Hong, Wei Wang, Zhigong Sun, Lingling Zhang, Bing Sun, Xiaowei Southeast University China Hangzhou Dianzi University China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory China Shanghai Institute of Microsystems and Information Technology China

来源：评论

学校读者我要写书评

暂无评论

A 220 GHz dynamic frequency divider in 0.5μm InP DHBT technology

引用

Journal of Semiconductors 2017年第5期38卷 82-87页

作者： Wei Cheng Youtao Zhang Yuan Wang Bin Niu Haiyan Lu Long Chang Junling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A high performance 3 inch 0.5 μm InP DHBT technology with three interconnecting layers has been *** epitaxial layer structure and geometry parameters of the device were carefully studied to get the required *** 0.5 × 5 μm^2 InP DHBTs demonstrated ft = 350 GHz,f（max） = 532 GHz and BV（CEO） = 4.8 V,which were modeled using Agilent-IIBT large signal *** a benchmark circuit,a dynamic frequency divider operating from 110 to 220 GHz has been designed,fabricated and measured with this *** ultra-high-speed 0.5 μm InP DHBT technology offers a combination of ultra-high-speed and high breakdown voltage,which makes it an ideal candidate for next generation 100 GHz＋ mixed signal integrated circuits.

关键词： InP heterojunction bipolar transistor dynamic frequency divider

来源：评论

学校读者我要写书评

暂无评论

A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT

A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT

引用

International Conference on integrated circuits and Microsystems (ICICM)

作者： Min Zhang Qiao Meng Youtao Zhang Xiaopeng Li Yi Zhang Wei Cheng Institute of RF-&-OE ICs Southeast University Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China National and Local Joint Engineering Laboratory of RF integration & Micro-Assembly Technology Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

This paper design and realize a broad-band 1:4 static frequency divider MMIC in 0.7$\mu$m InGaAs/InP DHBT technology. It is realized in a complete circuit structure and can be directly used in high precision instruments and relative systems to replace divide modules. Test results show that it can operate from 1GHz to 48GHz with sine-wave input. The input power dynamic range is from -10 to 10 dBm during the whole bandwidth. The output power is all above 0dBm and the SSB phase noise is -141.15dBc/Hz at 24GHz input.

关键词：

来源：评论

学校读者我要写书评

暂无评论

A 1.9-kV/2.61-m${\text{m}}\Omega\cdot$ cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V

IEEE Electron Device Letters

引用

IEEE Electron Device Letters 2018年第10期39卷 1548-1551页

作者： Tao Zhang Jincheng Zhang Hong Zhou Tangsheng Chen Kai Zhang Zhuangzhuang Hu Zhaoke Bian Kui Dang Yi Wang Li Zhang Jing Ning Peijun Ma Yue Hao Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi’an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on a silicon substrate with a low turn-ON voltage (V ON ) of 0.35 V and tungsten (W) as the anode. Non-field-plated lateral GaN SBDs with the anode-cathode distances (L AC ) of 6, 10, 15, 20, and 25 μm demonstrate the reverse breakdown voltages of 0.6, 1.1, 1.25, 1.5, and 1.9 kV with the differential specific ON-resistances (R ON , sp ) of 0.38, 0.72, 1.23, 1.87, and 2.61 mΩ·cm 2 , respectively. The power figure-of-merit (FOM) is calculated to be 1×10 3 , 1.7×10 3 , 1.3×10 3 , 1.2×10 3 , and 1.4×10 3 MW/cm 2 . To the best of our knowledge, this FOM of 1.7×10 3 MW/cm 2 is the highest among all the lateral GaN SBDs on a Si substrate. Combined with the ~10 8 current ON/OFF ratio at room temperature, the GaN SBD with the W anode shows a great promise for next-generation power electronics.

关键词： Gallium nitride Anodes Current density Silicon Wide band gap semiconductors Aluminum gallium nitride Schottky barriers

来源：评论

学校读者我要写书评

暂无评论

W-band AlGaN/GaN MMIC PA with 3.1W output power 14

W-band AlGaN/GaN MMIC PA with 3.1W output power

引用

14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017

作者： Shaobing, Wu Fangjin, Guo Jianfeng, Gao Weibo, Wang Zhonghui, Li Nianning, Huang Tangsheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute East Zhongshan Road Nanjing China

ISBN: (纸本)9781538648513

A balanced four-stage W-band GaN MMIC PA with Lange couplers and micro-strips matching elements is reported. Electron-beam lithography has been used to produce a 100 nm T-shaped gate on the AlGaN/GaN HEMT structure with ultrahigh aluminum content. The MMIC PA offers a small signal gain of greater than 18 dB and an output power of greater than 2.5W from 88GHz to 93GHz with an associated power gain of greater than 15 dB. Moreover, it achieves a peak output power of 3.1W (34.9dBm) at 91GHz in continuous-wave mode, with an associated power density of 3.23W/mm. Most notably, it is the first time that the peak output power and power density exceed 3W and 3W/mm in AlGaN/GaN HEMT at W-band simultaneously. © 2017 IEEE.

关键词： Electron beam lithography

来源：评论

学校读者我要写书评

暂无评论

Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip

引用

Chinese Physics B 2016年第6期25卷 494-499页

作者：吴立枢赵岩沈宏昌张有涛陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor（CMOS） on the same Silicon *** As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is *** a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.

关键词： Si CMOS GaAs pHEMT heterogeneous integration benzocyclobutene

来源：评论

学校读者我要写书评

暂无评论

Research on failure analysis and method of GaN-based HEMTs 14

Research on failure analysis and method of GaN-based HEMTs

引用

14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017

作者： Yan-Fang, Chen Wei-Ling, Guo Yan-Xu, Zhu Jian-Jun, Zhou Liang, Lei Chang-Qing, Bai Key Laboratory of Optoelectronics Technology Ministry of Education Beijing University of Technology Beijing100124 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9781538648513

The reliability of GaN-based high electron mobility transistors (HEMTs) is of great importance due to the special characteristics of AlGaN/GaN heterostructure such as intense polarization effect, high material defect density, strong electric field working condition, complicated process etc. Failure analysis is the premise and foundation to improve reliability of semiconductor devices. However, there is less research on failure analysis method about HEMTs at present. In this paper, an effective method of failure analysis of HEMT is presented to analyze the failure reason of electrical stress on many occasions, and a corresponding case analysis of HEMT is carried out. Following the unique complementary detection process of electrical testing, thermal radiation and photon emission, device failure position can be determined rapidly and failure mode and mechanism can be analyzed by this method. A 4-finger GaN-based HEMT with a operating voltage of 28V and a gate width of 1.25mm are analyzed according to this failure analysis method. Two failure positions were localized and the failure mode and mechanism were determined by comprehensive analysis of testing images and data. Finally, several improvements in design and process of GaN-based HEMTs are proposed, which is a valuable reference on the failure analysis and reliability enhancement of HEMT devices. © 2017 IEEE.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

A High Power 320–356GHz Frequency Multipliers with Schottky Diodes

引用

Chinese Journal of Electronics 2016年第5期25卷 986-990页

作者： YAO Changfei ZHOU Ming LUO Yunsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute(NEDI) Department of Microwave and Millimeter Wave Modules NEDI

A 320–356GHz fixed-tuned frequency doubler is realized with discrete Schottky diodes mounted on 50μm thick quartz substrate. Influence of circuit channel width and thermal dissipation of the diode junctions are discussed for high multiplying efficiency. The doubler circuit is flip-chip mounted on gold electroplated oxygenfree copper film for grounding of RF and DC signals, and better thermal transportation. The whole multiplying circuit is optimized and established in Computer simulation technology(CST) suite. The highest measured multiplying efficiency is 8.0% and its output power is 5.4mW at 328 GHz. The measured typical output power is 4.0mW in 320–356GHz.

关键词： Schottky diode Frequency doubler Efficiency Thermal dissipation

来源：评论

学校读者我要写书评

暂无评论

Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors

引用

Physical Review B 2019年第4期100卷 045417-045417页

作者： Xiaodi Xue Laipan Zhu Wei Huang Xavier Marie Pierre Renucci Yu Liu Yang Zhang Xiaolin Zeng Jing Wu Bo Xu Zhanguo Wang Yonghai Chen Weifeng Zhang Yuan Lu Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China Henan Key Laboratory of Photovoltaic Materials Laboratory of Low-Dimensional Materials ScienceSchool of Physics & Electronics Henan University Kaifeng 475004 China Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China Université de Toulouse INSA-CNRS-UPS LPCNO135 Avenue de Rangueil F-31077 Toulouse France Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China Université de Lorraine Institut Jean Lamour UMR CNRS 7198 campus ARTEM 2 Allée André Guinier 54011 Nancy France

We have measured a helicity-dependent photocurrent at zero external magnetic field in a device based on a semiconductor quantum well embedded in a p-i-n junction. The device is excited under vertical incidence with circularly polarized light. The spin filtering effect is evidenced in the temperature range 77–300 K owing to a CoFeB/MgO spin filter with out-of-plane magnetization in remanence. The helicity-dependent photocurrent is explored as a function of the temperature and bias. These characteristics are compared with those of a spin photocurrent device with in-plane magnetized CoFeB/MgO spin filter, excited under oblique incidence with circularly polarized light. In contrast to the in-plane spin filter device, the circularly polarized light asymmetry of the photocurrent in the out-of-plane device depends weakly on the external bias. The two devices are sensitive to the spin filtering of either the in-plane (Sx) or out-of-plane (Sz) photogenerated electron spin in the semiconductor quantum well. The helicity-dependent photocurrent results can be explained by the Dyakonov-Perel electron spin-relaxation mechanism. Our study reveals the giant spin relaxation anisotropy in III-V zinc-blende quantum wells in the presence of a vertical electric field.

关键词： Polarization of light Spin filtering Spin relaxation Spintronics Ferromagnets Quantum wells Femtosecond laser spectroscopy

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：