检索结果-内蒙古大学图书馆

2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Ding, Xiao Ming Chen, Gang Wang, Dian Li Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

Wherever possible, we have adopted the newest modern technology. The Au-Si binary alloy sintered chips are silicon or silicon carbide power devices. The sintered temperature is 380 to 390°C. Using micro-infrared thermal image instrument, compares the microwave transient infrared thermal image test results of sample devices which chips welded process under two different process condition. Measured results show that the thermal resistance after chip welded process optimized is twenty percent smaller than before. It describes the importance of controlling the chip welded process parameters during assembly. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Junction temperature

来源：评论

学校读者我要写书评

暂无评论

Investigation of millimeter-wave GaN HEMTs and a quick small-signal modeling method

Investigation of millimeter-wave GaN HEMTs and a quick small...

引用

2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Zhong, Zheng Guo, Yong-Xin Zhou, Jianjun Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore Singapore

ISBN: (纸本)9781467309028

Recently, wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to RF/microwave transmitters for communications and radar systems. Of the various wide bandgap materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to investigate the status of updated GaN HEMTs technology with a view of highlighting both the progress and prospects. Besides, a quick small-signal modeling method has been presented for instant MMIC designs. © 2012 IEEE.

关键词： Millimeter waves

来源：评论

学校读者我要写书评

暂无评论

Design of single crystal silicon based RF MEMS switch with high contact force 3

Design of single crystal silicon based RF MEMS switch with h...

引用

3rd Asia-Pacific Conference on Antennas and Propagation, APCAP 2014

作者： Di, Mei Jing, Wu YuanWei, Yu PeiRan, Zhang Jian, Zhu NanJing Electronic Devices Institute NanJing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory NanJing210016 China

ISBN: (纸本)9781479943548

A metal contact RF MEMS switch based on single crystal silicon is presented in this article. Performance of the switch is demonstrated numerically in simulations. The mN-level contact and release forces are achieved. Pull-in voltage is calculated to be 40V. 1.5mN contact force and 1.2mN release force are achieved when actuation voltage is 50V. The isolation and insertion loss are better than -30.8dB and -0.09dB respective between DC and 10GHz. The fabrication process is presented as well. © 2014 IEEE.

关键词： Silicon wafers

来源：评论

学校读者我要写书评

暂无评论

Direct extraction method of InP HBT small-signal model

Direct extraction method of InP HBT small-signal model

引用

2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Lu, Hai Yan Cheng, Wei Chen, Gang Chen, Tang Sheng Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Device Institute Nanjing 210016 China

An accurate method for extracting the elements of InP HBT small-signal model parameters is proposed in this paper. The method can accurately resolve the most important internal parameters from the measured S-parameters, and is not sensitive to the values of parasitic parameters. The initial values of the parasitic are extracted by using a set of test structure, and the intrinsic elements determined by using the analytical method are described as functions of the parasitic elements. The extraction procedure uses a set of closed-form expressions derived without any approximation. An experimental validation is carried out on three HBT devices and satisfactory results are obtained up to 20 GHz. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Heterojunction bipolar transistors

来源：评论

学校读者我要写书评

暂无评论

A compact transition structure integrated with DC feed filter for submillimeter wave application

A compact transition structure integrated with DC feed filte...

引用

2007 IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications, MAPE 2007

作者： Yuangen, Lin Yong, Zhang Ruimin, Xu Jun, Xie Shuyi, Wang School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules

ISBN: (纸本)1424410444

A compact transition structure integrated with DC feed low pass filter for submillimeter wave application is designed and simulated. In this structure, the probe transition for suspended microstrip is in longitudinal orientation relative to the waveguide, and a sector suspended microstrip low pass filter is integrated for DC feed circuits, Broad bandwidth with low insert loss (

关键词： Low pass filters

来源：评论

学校读者我要写书评

暂无评论

Two-terminal electroluminescence of AlGaN/GaN high electron mobility transistors

Two-terminal electroluminescence of AlGaN/GaN high electron ...

引用

2012 International Conference on Microwave and Millimeter Wave technology, ICMMT 2012

作者： Kong, Yuechan Ren, Chunjiang Dong, Xun Zhou, Jianjun Xue, Fangshi Chen, Tangsheng Li, Liang IEEE Conference Publishing Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781467321839

Electroluminescence (EL) characteristics from reverse-biased Schottky barrier diode are investigated on AlGaN/GaN high electron mobility transistors (HEMT) with different structures. Light emission from devices under high voltage or with high gate leakage current exhibit bluish or reddish color, suggesting different emission mechanism. No obvious EL is observed in AlGaN/GaN/AlGaN double heterostructure at high drain voltage near breakdown. 2D device simulation of the AlGaN/GaN HEMT at high drain voltage shows distinct separation of electrons and holes distribution, eliminating the possibility of direct band-to-band transitions. By comparing the EL image from front side and back side of the wafer, the manufacturing related problems as well as the location of material defects are detected. © 2012 IEEE.

关键词： Electroluminescence

来源：评论

学校读者我要写书评

暂无评论

High performance ultra-thin quaternary InAlGaN barrier HEMTs with fT > 260 GHz

High performance ultra-thin quaternary InAlGaN barrier HEMTs...

引用

2016 International Forum on Wide Bandgap Semiconductors China, IFWS 2016

作者： Zhu, Guangrun Zhang, Kai Yu, Xinxin Kong, Yuechan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute No.524 Zhongshan East Road Nanjing China

ISBN: (纸本)9781509046133

We fabricated the depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier InAlGaN/AlN/GaN heterostructure on SiC substrate. A 60-nm rectangular-shape gate was defined through e-beam lithography and subsequent Ni/Au (20 nm/80 nm) metal evaporation. Our device shows a high DC drain current density of 2.5 A/mm, a low on-resistance Ron of 0.94 Ω•mm in the linear region, a high peak extrinsic transconductance of 0.97 S/mm, and a high current-gain cutoff frequency of 261 GHz. Besides, a high fT • Lg product of 15.7 GHz•μm was achieved. The drain-induced barrier lowering (DIBL) is calculated to be 200 mV/V at ID=1 mA/mm, implying moderate short-channel effect in our device. To our knowledge, this is among the best fT performance for GaN-based HEMTs with a gate length of around 60 nm. © 2016 IEEE.

关键词： High electron mobility transistors

来源：评论

学校读者我要写书评

暂无评论

Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance

引用

Chinese Physics B 2019年第6期28卷 105-109页

作者： Kang Liu Jiwen Zhao Huarui Sun Huaixin Guo Bing Dai Jiaqi Zhu 1Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Center for Composite Materials and Structures Harbin Institute of TechnologyHarbin 150080China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance(TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.

关键词： GaN heteroepitaxy thermal conductivity transient thermoreflectance ultraviolet laser

来源：评论

学校读者我要写书评

暂无评论

11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF C mathrm{j}0} 13

11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF ...

引用

13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, UCMMT 2020

作者： Niu, Bin Fan, Daoyu Lin, Gang Dai, Kunpeng Lu, Hai-Yan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Chip Valley Industrial Technology Institute Nanjing210016 China

ISBN: (纸本)9781728190648

GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-Anode GaAs terahertz SBD was presented with its C{\mathrm{j}0} scaled into sub-fF range. Scalling C-V measurement showed C{\mathrm{j}0} without parasitic capacity reached 0.476fF for the 0.5\mu\mathrm{m} anode diameter device. With the relative low series resistance Rs of 28.8\mathrm{\Omega}, cutoff frequency f{\mathrm{t}} reached 11.6THz. The whole process was based on 4 inch GaAs wafer, guarantee stability and conformity in terahertz GaAs SBD integrated circuits working over 1THz. © 2020 IEEE.

关键词： Schottky barrier diodes

来源：评论

学校读者我要写书评

暂无评论

A micro transfer-printer for high-accuracy optoelectronic and photonic integration 16

A micro transfer-printer for high-accuracy optoelectronic an...

引用

16th IEEE International Conference on Solid-State and integrated Circuit technology, ICSICT 2022

作者： Wang, Yuxuan Li, Guanyu Kong, Yuchang Zheng, Youdou Shi, Yi Nanjing University School of Electronic Science and Engineering Nanjing210093 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210000 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

A precise integration of the optoelectronic device onto a functional platform, such as silicon photonics, LiNbO3 photonics or Si CMOS, is the key approach that makes the union of the different parts. Here, we propose a micro transfer-printer (μ-TPer) designing for high-accuracy optoelectronic and photonic integration. The used μ-TPer equips a multi-axis movement stage and visual-recognizing system, which recognizes the alignment marks and operates the aligning actions precisely. To employ this μ-TPer, a basic photonic integrated circuit of InP PD onto silicon microring resonator are realized, where the misalignment less than 1 μm can be obtained optimally. This equipment enables a powerful manufacturing route for the various optoelectronic and photonic integrations. © 2022 IEEE.

关键词： Indium phosphide

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：