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Scaling technologies for millimeter-wave GaN-HEMTs

Scaling technologies for millimeter-wave GaN-HEMTs

2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Dai, Yongsheng Zhou, Jianjun Chen, Jianfeng Han, Min Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China School of Electronic and Optical Engineer Nanjing University of Science and Technology China

ISBN: (纸本)9781467309028

GaN-HEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted for GaN-HEMTs and the correct topology derived such that simple scaling rules apply to the unit cell. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fngers and the gate width are derived to optimize the size of the device. © 2012 IEEE.

关键词： Millimeter waves

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Development of 2500V SMB-seagull SiC JBS diodes

Development of 2500V SMB-seagull SiC JBS diodes

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International Conference on Mechatronics Engineering and Electrical Engineering, CMEEE 2014

作者： Chen, G. Zhang, Q.M. Bai, S. Liu, A. Wang, L. Huang, R.H. Li, D.H. Li, Y.N. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China Jinan Semiconductor Institute Jinan China

ISBN: (纸本)9781138027190

High voltage 4H-SiC Ti schottky Junction Barrier Schottky (JBS) diode with breakdown voltage of 2500 V and forward current of 2 A has been fabricated. A low reverse leakage current below 1.13 × 10-4 A/cm2 at the bias voltage of -2.5 kV has been obtained. The forward on-state current was 2 A at VF = 1.8 V. The chip is 2.3 mm × 2.3 mm and the active-region is 1.5 mm × 1.5 mm. The turn-on voltage is about 0.9 V. The on-state resistance is 6.52 mΩ · cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was packaged with SMB seagull package. The thickness of the N—epilayer is 24 µm, and the doping concentration is 4.0 × 1015 cm-3. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using Ti/Ni/Ag multilayer metal structure, the double side Ag process of 4H-SiC JBS diode is formed. We use the PECVD SizNy/SiO2 as the passivation dielectric and a non photosensitive polyamide with 390 °C cured temperature as the passivation in the end. © 2015 Taylor & Francis Group, London.

关键词： Silicon carbide

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Characterize and optimize the four-wave mixing in dual-interferometer coupled silicon microrings

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Chinese Physics B 2019年第10期28卷 198-203页

作者： Chao Wu Yingwen Liu Xiaowen Gu Shichuan Xue Xinxin Yu Yuechan Kong Xiaogang Qiang Junjie Wu Zhihong Zhu Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China

By designing and fabricating a series of dual-interferometer coupled silicon microrings, the coupling condition of the pump, signal, and idler beams can be engineered independently and then we carried out both the continuous-wave and pulse pumped four-wave mixing experiments to verify the dependence of conversion efficiency on the coupling conditions of the four interacting beams, respectively. Under the continuous-wave pump, the four-wave mixing efficiency gets maximized when both the pump and signal/idler beams are closely operated at the critical coupling point, while for the pulse pump case, the efficiency can be enhanced greatly when the pump and converted idler beams are all overcoupled. These experiment results agree well with our theoretical calculations. Our design provides a platform for explicitly characterizing the four-wave mixing under different pumping conditions, and offers a method to optimize the four-wave mixing, which will facilitate the development of on-chip all-optical signal processing with a higher efficiency or reduced pump power.

关键词： silicon resonators four-wave mixing Mach-Zehnder interferometer

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An Aging Small-signal Modeling Method of Microwave Transistors Using GA-ELM Neural Network

An Aging Small-signal Modeling Method of Microwave Transisto...

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2023 International Symposium of Electronics Design Automation, ISEDA 2023

作者： Cheng, Lin Lu, Hongliang Guo, Xiuxiu Yan, Silu Cheng, Wei Zhang, Yuming School of Microelectronics Xidian University Xi'an710071 China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9798350304510

In this paper, an aging small-signal S-parameters modeling method for microwave transistors is explored using a genetic algorithm (GA) to optimize the Extreme Learning Machine (ELM) neural network. A dual GA-ELM neural network architecture was used to simulate the fresh S-parameters of InP heterojunction bipolar transistor (HBT) devices and the degradation of S-parameters after accelerated aging, respectively. Good agreement was achieved between measured and predicted results of the fresh and aging S-parameters within a frequency range of 0.1 to 40 GHz. © 2023 IEEE.

关键词： Scattering parameters

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Research on failure analysis and method of GaN-based HEMTs 14

Research on failure analysis and method of GaN-based HEMTs

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14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017

作者： Yan-Fang, Chen Wei-Ling, Guo Yan-Xu, Zhu Jian-Jun, Zhou Liang, Lei Chang-Qing, Bai Key Laboratory of Optoelectronics Technology Ministry of Education Beijing University of Technology Beijing100124 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9781538648513

The reliability of GaN-based high electron mobility transistors (HEMTs) is of great importance due to the special characteristics of AlGaN/GaN heterostructure such as intense polarization effect, high material defect density, strong electric field working condition, complicated process etc. Failure analysis is the premise and foundation to improve reliability of semiconductor devices. However, there is less research on failure analysis method about HEMTs at present. In this paper, an effective method of failure analysis of HEMT is presented to analyze the failure reason of electrical stress on many occasions, and a corresponding case analysis of HEMT is carried out. Following the unique complementary detection process of electrical testing, thermal radiation and photon emission, device failure position can be determined rapidly and failure mode and mechanism can be analyzed by this method. A 4-finger GaN-based HEMT with a operating voltage of 28V and a gate width of 1.25mm are analyzed according to this failure analysis method. Two failure positions were localized and the failure mode and mechanism were determined by comprehensive analysis of testing images and data. Finally, several improvements in design and process of GaN-based HEMTs are proposed, which is a valuable reference on the failure analysis and reliability enhancement of HEMT devices. © 2017 IEEE.

关键词： Gallium nitride

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A monolithic AlGaN/GaN HEMT VCO using BST film varactor

A monolithic AlGaN/GaN HEMT VCO using BST film varactor

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4th IEEE International Symposium on Radio-Frequency Integration technology, RFIT2011

作者： Kong, Cen Li, Hui Jiang, Shuwen Zhou, Jianjun Chen, Xiaojian Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781457705182

A monolithic AlGaN/GaN HEMT voltage controlled oscillator (VCO) using barium strontium titanate (BST) MIM varactor is reported first time. The BST thin film was fabricated by RF magnetron sputtering. The fabrication process is fully compatible with the standard GaN MMIC integrated process. An output power of 17dBm and the phase noise of -75dBc/Hz (at 100kHz) and -110dBc/Hz (at 1MHz) are obtained while the bias of the drain is 8V and BST varactor voltage is 0V. The VCO exhibits 500MHz tunable frequency bandwidth at the central frequency of 6.42GHz while BST varactor voltage changed from 0V to 20V. © 2011 IEEE.

关键词： Barium strontium titanate

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An InP DHBT 140 GHz-165 GHz Amplifier

An InP DHBT 140 GHz-165 GHz Amplifier

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IEEE International Conference on Communication Problem-Solving

作者： Sun Yan Cheng Wei Li Ou Peng Lu Hai Yan Li Xiao Wang Yuan Niu Bin Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China

ISBN: (纸本)9781467365451

We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 μm InP DHBTs and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier smallsignal gain exhibits >5 dB from 140 GHz-165 GHz. The peak gain is 11 dB at 140 GHz. This is the first time reported InP DHBT MMIC amplifier operating in D-band employing TFM in china. The total size of this 3-stage amplifier is only 1.04 mm×0.88 mm.

关键词： Indium phosphide (InP) Heterojunction bipolar transistors (HBTs) Millimeter-wave monolithic integrated circuit (MMIC) Amplifier D-band Thin-film microstrip (TFM)

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InGaAs/InP double heterojunction bipolar transistors with fmax=532GHz

InGaAs/InP double heterojunction bipolar transistors with fm...

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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015

作者： Wei, Cheng Yuan, Wang Bin, Niu Zi-Li, Xie Jun-Ling, Xie Hai-Yan, Lu Yan, Zhao Yan, Sun Tang-Sheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing210093 China

ISBN: (纸本)9781479964505

An InGaAs/InP DHBT with InGaAsP composite collector is designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The DHBT with emitter area of 0.5×5μm2 exhibits a current cutoff frequency ft=350GHz and a maximum oscillation frequency fmax=532GHz which is to our knowledge the highest BVCEO ever reported for InGaAs/InP DHBTs in China. The breakdown voltage is 4.8V. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage controlled oscillator (VCO) and mixer applications at THz span. © 2015 IEEE.

关键词： Indium phosphide

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Current Gain Increase by SiN_x Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors

Current Gain Increase by SiN_x Passivation in InGaAs/InP Dou...

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IEEE International Conference on Communication Problem-Solving

作者： Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467365451

Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiN_x deposition was investigated. Due to reduction of surface damages during SiN_x deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.

关键词： InP Heterostructure bipolar transistor Silicon nitride Passivation

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Transient simulation for the thermal design optimization of pulse operated AlGaN/GaN HEMTs

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Micromachines 2020年第1期11卷 76-76页

作者： Guo, Huaixin Chen, Tangsheng Shi, Shang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. To improve the calculation accuracy, the nonlinear thermal conductivities and near-junction region of GaN chip are considered and treated appropriately in our numerical analysis. The periodic transient pulses temperature and temperature distribution are analyzed to estimate thermal response when GaN amplifiers are operating in pulsed mode with kilowatt-level power, and the relationships between channel temperatures and pulse width, gate structures, and power density of GaN device are analyzed. Results indicate that the maximal channel temperature and thermal impedance of device are considerably influenced by pulse width and power density effects, but the changes of gate fingers and gate width have no effect on channel temperature when the total gate width and active area are kept constant. Finally, the transient thermal response of GaN amplifier is measured using IR thermal photogrammetry, and the correctness and validation of the simulation model is verified. The study of transient simulation is demonstrated necessary for optimal designs of pulse-operated AlGaN/GaN HEMTs. © 2020 by the authors.

关键词： Gallium nitride

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