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检索条件"机构=Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory"
190 条 记 录,以下是81-90 订阅
排序:
Bright photon-pair source based on a silicon dual-Mach-Zehnder microring
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Science China(Physics,Mechanics & Astronomy) 2020年 第2期63卷 3-6页
作者: Chao Wu YingWen Liu XiaoWen Gu XinXin Yu YueChan Kong Yang Wang XiaoGang Qiang JunJie Wu ZhiHong Zhu XueJun Yang Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China
Single photons and photon pairs are typically generated by spontaneous parametric down conversion or quantum dots;however,spontaneous four-wave mixing(SFWM)in silicon microring resonators[1]is also an appealing source... 详细信息
来源: 评论
An InP DHBT 140 GHz-165 GHz Amplifier
An InP DHBT 140 GHz-165 GHz Amplifier
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2015 International Conference on Communication Problem-Solving(ICCP)
作者: Sun Yan Cheng Wei Li Ou Peng Lu Hai Yan Li Xiao Wang Yuan Niu Bin Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China
We present a compact, 3-stage millimeter-wave monolithic integrated circuit(MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 um In P DHBTs and a multilayer thin-film ... 详细信息
来源: 评论
Study on 2000V SiC JBS Diodes
Study on 2000V SiC JBS Diodes
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2013 3rd International Conference on Electric and Electronics(EEIC 2013)
作者: Gang Chen Lin Wang Runhua Huang Song Bai Yun Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
High voltage 4H-SiC Ti schottky junction barrier schottky(JBS) diode with breakdown voltage of 2000 V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10A/cm at the bias vo... 详细信息
来源: 评论
Common base four-finger InGaAs/InP DHBT with 535 GHz fmax
Common base four-finger InGaAs/InP DHBT with 535 GHz fmax
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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015
作者: Bin, Niu Wei, Cheng Yuan, Wang Zi-Li, Xie Jun-Ling, Xie Hai-Yan, Lu Yan, Sun Tang-Sheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing210093 China
A common base four-finger InGaAs/InP DHBT with 535 GHz fmax using 0.5μm emitter technology is fabricated. Multi-finger design was used to increase input current. Common base configuration was compared with common emi... 详细信息
来源: 评论
Novel extraction method for small-signal equivalent circuit model of HEMTs based on vector fitting
Novel extraction method for small-signal equivalent circuit ...
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2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014
作者: Wu, Yongzhi Ren, Kun Liu, Jun Wei, Cheng Haiyan, Lu Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou310037 China Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
A novel model method for III-V HEMTs small-signal model parameter extraction is presented in this work. All the model elements are directly derived from hot S-parameters, rather than cold S-parameters, by using vector... 详细信息
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100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs DHBT
100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs D...
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2015 International Conference on Communication Problem-Solving(ICCP)
作者: Bin Niu Wei Cheng You-Tao Zhang Yuan Wang Hai-Yan Lu Long Chang Jun-Ling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is *** chip thin film resistor and capacitor were *** levels of interconnect were *** collector design and 0.5μm emitter width enable the sta... 详细信息
来源: 评论
Growth of compressively-strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers
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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年 第5-6期13卷 181-185页
作者: Pan, Lei Dong, Xun Ni, Jinyu Li, Zhonghui Yang, Qiankun Peng, Daqing Li, Chuanhao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
In this paper, crack-free GaN films with step-graded AlGaN transition layer and AlGaN superlattice layer as buffer layers were grown on Si(111) substrate by metal-organic chemical vapor deposition(MOCVD). The combinat... 详细信息
来源: 评论
107W CW SiC MESFET with 48.1% PAE
107W CW SiC MESFET with 48.1% PAE
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2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications
作者: Yonghong Tao Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
In the paper,30mm high-power SiC MESFETs have been *** load-pull testing at 1.5 GHz and 48V drain to source voltage,packaged 2 ×30mm SiC MESFET transistors were demonstrated with output power higher than 107W wit... 详细信息
来源: 评论
A 42 to 56GHz wide band CMOS power amplifier
A 42 to 56GHz wide band CMOS power amplifier
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2013 6th UK, Europe, China Millimeter Waves and THz technology Workshop, UCMMT 2013
作者: Yan, Pinpin Chen, Jixin Hong, Wei Jiang, Xin State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing 210096 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China
A wide band power amplifier is designed by using 90nm CMOS process. By proper arrangement of frequency response among circuit stages, the amplifier exhibit maximum gain of 15dB at 47-48GHz and 3dB bandwidth from 42 to... 详细信息
来源: 评论
Current Gain Increase by SiNx Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors
Current Gain Increase by SiNx Passivation in InGaAs/InP Doub...
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2015 International Conference on Communication Problem-Solving(ICCP)
作者: Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
Passivation of InGaAs/InP double heterostructure bipolar transistors(DHBTs) with room temperature SiN deposition was investigated. Due to reduction of surface damages during SiN deposition, current gain improvement ... 详细信息
来源: 评论