Single photons and photon pairs are typically generated by spontaneous parametric down conversion or quantum dots;however,spontaneous four-wave mixing(SFWM)in silicon microring resonators[1]is also an appealing source...
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Single photons and photon pairs are typically generated by spontaneous parametric down conversion or quantum dots;however,spontaneous four-wave mixing(SFWM)in silicon microring resonators[1]is also an appealing source of entangled photons,offering a strong cavity-enhanced nonlinear interactions while maintaining features,such as compact,simple to fabricate,and allowing for thermal ***,silicon ring-resonators usually suffer from a trade-off between providing a high pair generation rate(PGR)and high extraction *** achieve high PGR,devices are generally operated with the signal and idler photons in the undercoupling regime and pump photons at the critical coupling point,while high extraction rates require the converted photons to be ***,the optimal conditions for achieving maximal output photon pair flux are critical coupling for the pump photons and overcoupling for the converted photons[2,3].
We present a compact, 3-stage millimeter-wave monolithicintegrated circuit(MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 um In P DHBTs and a multilayer thin-film ...
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We present a compact, 3-stage millimeter-wave monolithicintegrated circuit(MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 um In P DHBTs and a multilayer thin-film microstrip(TFM) wiring environment. The amplifier smallsignal gain exhibits >5 dB from 140 GHz-165 GHz. The peak gain is 11 dB at 140 GHz. This is the first time reported In P DHBT MMIC amplifier operating in D-band employing TFM in china. The total size of this 3-stage amplifier is only 1.04 mm ×0.88 mm.
High voltage 4H-SiC Ti schottky junction barrier schottky(JBS) diode with breakdown voltage of 2000 V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10A/cm at the bias vo...
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High voltage 4H-SiC Ti schottky junction barrier schottky(JBS) diode with breakdown voltage of 2000 V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10A/cm at the bias voltage of-2kV has been obtained. The forward on-state current was 2A at V = 1.9V and 5A at VF = 3V. The chip is 2.3mm×2.3mm. The turn-on voltage is about 1.0V. The on-state resistance is 19.3m?·cm. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was packaged with SMB mode. The thickness of the Nepilayer is 17μm, and the doping concentration is 4.6×10cm. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using Ti/Ni/Ag multilayer metal structure, the double side Ag process of 4H-SiC JBS diode is formed. We use the PECVD SiN/SiO as the passivation dielectric and a non photosensitive polyamide as the passivation in the end.
A common base four-finger InGaAs/InP DHBT with 535 GHz fmax using 0.5μm emitter technology is fabricated. Multi-finger design was used to increase input current. Common base configuration was compared with common emi...
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A novel model method for III-V HEMTs small-signal model parameter extraction is presented in this work. All the model elements are directly derived from hot S-parameters, rather than cold S-parameters, by using vector...
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A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is *** chip thin film resistor and capacitor were *** levels of interconnect were *** collector design and 0.5μm emitter width enable the sta...
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A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is *** chip thin film resistor and capacitor were *** levels of interconnect were *** collector design and 0.5μm emitter width enable the static frequency divider operate data frequency over 100GHz.
In this paper, crack-free GaN films with step-graded AlGaN transition layer and AlGaN superlattice layer as buffer layers were grown on Si(111) substrate by metal-organic chemical vapor deposition(MOCVD). The combinat...
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In the paper,30mm high-power SiC MESFETs have been *** load-pull testing at 1.5 GHz and 48V drain to source voltage,packaged 2 ×30mm SiC MESFET transistors were demonstrated with output power higher than 107W wit...
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ISBN:
(纸本)9781467360760
In the paper,30mm high-power SiC MESFETs have been *** load-pull testing at 1.5 GHz and 48V drain to source voltage,packaged 2 ×30mm SiC MESFET transistors were demonstrated with output power higher than 107W with 48.1% PAE,and the gain was 10.3 dB under continuous wave RF *** gate periphery divices of 1mm SiC MESFET exhibited 35 dBm output power with more than 55% PAE,and the gain was 12.3 dB under continuous wave RF operation at 1.5 GHz and 48V drain to source voltage.
A wide band power amplifier is designed by using 90nm CMOS process. By proper arrangement of frequency response among circuit stages, the amplifier exhibit maximum gain of 15dB at 47-48GHz and 3dB bandwidth from 42 to...
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Passivation of InGaAs/InP double heterostructure bipolar transistors(DHBTs) with room temperature SiN deposition was investigated. Due to reduction of surface damages during SiN deposition, current gain improvement ...
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Passivation of InGaAs/InP double heterostructure bipolar transistors(DHBTs) with room temperature SiN deposition was investigated. Due to reduction of surface damages during SiN deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.
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