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Liquid-encapsulated quantum dot for enhanced UV and thermal stability of quantum dot color conversion films

Nano Research 2024年第11期17卷 10127-10133页

作者： Ronghuan Liu Fan Fang Pai Liu Xijian Duan Kai Wang Xiao Wei Sun Institute of Nanoscience and Applications and Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen 518055 China Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology) Ministry of Education and Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting Southern University of Science and Technology Shenzhen 518055 China

Encapsulation is a widely recognized method for enhancing the stability of colloidal quantum dots (CQDs). However, traditional encapsulation methods for solid-state materials expose encapsulated CQDs to risks such as ligand loss and poor dispersion. Additionally, these encapsulated CQDs still face the risk of aging due to surface ligand bond breakage under high-energy radiation. In this study, we found that quantum dots in solution exhibited enhanced ultraviolet (UV) tolerance compared to their counterparts in solid form under an inert atmosphere. We attribute this enhancement to improved ligand retention and self-healing of quantum dots in solution. Herein, we introduce a novel method for fabricating liquid-encapsulated quantum dot (LEQD) color conversion films. This technique leverages the self-healing capability of ligands in liquid-state quantum dots to enhance the UV and thermal stability of the quantum dot color conversion films. Experimental results demonstrate that LEQD films exhibit better resistance to UV radiation and high temperatures than solid-encapsulated quantum dot (SEQD) color conversion films. After 400 h of exposure to 100 mW blue light-emitting device (LED) light at 60 °C and 90% humidity, the brightness of LEQD film retained 90% of its initial level. This liquid-state quantum dot encapsulation approach offers a promising pathway for developing more durable quantum dot color conversion films.

关键词： liquid encapsulation quantum dots stability quantum dot color conversion film

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A NONLOCAL KRONECKER-BASIS-REPRESENTATION METHOD FOR LOW-DOSE CT SINOGRAM RECOVERY

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Journal of Computational Mathematics 2024年第4期42卷 1080-1108页

作者： Jian Lu Huaxuan Hu Yuru Zou Zhaosong Lu Xiaoxia Liu Keke Zu Lin Li Shenzhen Key Laboratory of Advanced Machine Learning and Applications College of Mathematics and StatisticsShenzhen UniversityShenzhen 518060China National Center for Applied Mathematics Shenzhen(NCAMS) Shenzhen 518055China Department of Industrial and Systems Engineering University of Minnesota Twin CitiesMinneapolisMN55455USA Department of Applied Mathematics The Hong Kong Polytechnic UniversityHong Kong SARChina School of Electronic Engineering Xidian UniversityXi'an 710071China

Low-dose computed tomography(LDCT)contains the mixed noise of Poisson and Gaus-sian,which makes the image reconstruction a challenging *** order to describe the statistical characteristics of the mixed noise,we adopt the sinogram preprocessing as a stan-dard maximum a posteriori(MAP).Based on the fact that the sinogram of LDCT has non-local self-similarity property,it exhibits low-rank *** conventional way of solving the low-rank problem is implemented in matrix forms,and ignores the correlations among similar patch *** avoid this issue,we make use of a nonlocal Kronecker-Basis-Representation(KBR)method to depict the low-rank problem.A new denoising model,which consists of the sinogram preprocessing for data fidelity and the nonlocal KBR term,is developed in this *** proposed denoising model can better illustrate the generative mechanism of the mixed noise and the prior knowledge of the ***-merical results show that the proposed denoising model outperforms the state-of-the-art algorithms in terms of peak-signal-to-noise ratio(PSNR),feature similarity(FSIM),and normalized mean square error(NMSE).

关键词： Low-dose computed tomography Kronecker-basis-representation Low-rank imation.Noise-generating-mechanism

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Synthesis of Deep Blue InP Quantum Dots via HF Etching for Light-Emitting Diodes

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ACS Applied Electronic Materials 2025年

作者： Zhang, Wenda Duan, Xijian Chen, Lei Wang, Kai Song, Yujie Wang, Weigao Sun, Xiao Wei Hainan Provincial Key Laboratory of Fine Chemicals School of Chemistry and Chemical Engineering Hainan University Haikou570228 China Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting Department of Electrical and Electronic Engineering Institute of Nanoscience and Applications Southern University of Science and Technology Shenzhen518055 China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China Xuyu Optoelectronics Co. Ltd Shenzhen518101 China

Red, green, and sky-blue InP quantum dots (QDs) are currently bridging the gap with CdSe-based QDs in terms of the photoluminescence quantum yields (PLQY). However, the sensitivity of InP QDs to water and oxygen, coupled with the increased specific surface area of smaller pure-blue and deep-blue QDs, leads to diminished PLQY, consequently restricting the fabrication of highly efficient blue InP quantum dot light-emitting diodes (QLEDs). Here, high-temperature nucleation is utilized to produce highly crystalline InP cores, followed by low-temperature HF etching. This dual-treatment method simultaneously addresses surface phosphate defects and diminishes QD size, ultimately yielding pure-blue InP QDs with a PLQY of 73% at 466 nm and deep-blue InP QDs with a PLQY of 52% at 451 nm. Notably, by fine-tuning the HF dosage, 421 nm deep-blue InP QDs, representing the shortest wavelength to date, were successfully prepared. Additionally, enhancing carrier injection efficiency was achieved by replacing long-chain 1-dodecanethiol (DDT) ligands with short-chain 1-octanethiol (OT) ligands through ligand exchange. QLEDs exhibited an external quantum efficiency of 0.8% with an emission wavelength of 468 nm, providing a perspective for the fabrication of InP blue QLEDs via this etching technique. © 2025 American Chemical Society.

关键词： Photoluminescence

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Isovalent co-alloying contributes to considerable improvement in thermoelectric performance of BiSe bulks with weak anisotropy

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Journal of Materiomics 2024年第5期10卷 965-974页

作者： Fu Li Chen Liu Mohammad Nisar Jian Zhao Chongbin Liang Junze Zhang Ziyuan Wang Zhuanghao Zheng Ping Fan Xilin Wang Zhen-Hua Ge Yue-Xing Chen Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060GuangdongChina Kunming University of Science and Technology Kunming650093China Tsinghua Shenzhen International Graduate School Tsinghua UniversityShenzhen518060GuangdongChina

BiSe with intrinsic low thermal conductivity has considered as a promising thermoelectric(TE)material at nearly room *** improve its low thermoelectric figure of merit(zT),in this work,Sb and Te isovalent co-alloying was performed and significantly optimized its TE property with weakly anisotropic *** substituting Sb on Bi sites,the carrier concentration is suppressed by introduction of Sbsingle bond Se site defects,which contributes to the increased absolute value of Seebeck coefficient(|S|).Further co-alloying Te on Se of the optimized composition Bi_(0.7)Sb_(0.3)Se,the carrier concentration increased without affecting the|S|due to the enhanced effective mass,which leads to a highest power factor of 12.8μW/(cm·K^(2))at 423 *** a result,a maximum zT of∼0.54 is achieved for Bi_(0.7)Sb_(0.3)Se_(0.7)Te_(0.3) along the pressing direction and the average zT(zTave)(from 300 K to 623 K)are drastically improved from 0.24 for pristine BiSe sample to ***,an energy conversion efficiency∼4.0%is achieved for a single leg TE device of Bi_(0.7)Sb_(0.3)Se_(0.7)Te_(0.3)when applied the temperature difference of 339 K,indicating the potential TE application.

关键词： BiSe Isovalent alloying zT Carrier modulation

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Potassium doping for grain boundary passivation and defect suppression enables highly-efficient kesterite solar cells

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Chinese Chemical Letters 2024年第11期35卷 565-570页

作者： Yingfen Li Zhiqi Wang Yunhai Zhao Dajun Luo Xueliang Zhang Jun Zhao Zhenghua Su Shuo Chen Guangxing Liang College of Materials and Energy Engineering Guizhou Institute of TechnologyGuiyang 550003China Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China

The complicated and diverse deep defects,voids,and grain boundary in the CZTSSe absorber are the main reasons for carrier recombination and efficiency *** further improvement of the open-circuit voltage and fill factor so as to increase the efficiency of CZTSSe device is *** this work,we obtained K-doped CZTSSe absorber by a simple solution *** medium-sized K atoms,which combine the advantages of light and heavy alkali metals,are able to enter the grain interior as well as segregate at grain *** K-Se liquid phase can improve the absorber *** find that the accumulation of the wide bandgap compound K_(2)Sn_(2)S_(5)at grain boundary can increase the contact potential difference of grain boundary,form more effective hole barriers,and enhance the charge separation *** the same time,K doping passivates the interface as well as bulk defects and suppresses the non-radiative *** improved crystallinity,enhanced charge transport capability and reduced defect density due to K doping result in a significant enhancement of the carrier lifetime,leading to 13.04%device *** study provides a new idea for simultaneous realization of grain boundary passivation and defect suppression in inorganic kesterite solar cells.

关键词： Kesterite Solar cell Chemical doping Defect Efficiency

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Versatile synthesis of yolk/shell hybrid nanocrystals via ion-exchange reactions for novel metal/semiconductor and semiconductor/semiconductor conformations

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Nano Research 2017年第9期10卷 2977-2987页

作者： Muwei Ji Xinyuan Li Hongzhi Wang Liu Huang Meng Xu Jia Liu Jiajia Liu Jin Wang Jiatao Zhang Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications School of Materials Science and Engineering Beijing Institute of Technology Beijing 100081 China Graduate School at Shenzhen Tsinghua University Shenzhen 518055 China

Yolk/shell (Y–S) hybrid nanoarchitectures, owing to the interior voids created for individualized catalyst applications, have emerged as new candidates for effectively isolating catalytic species. However, the well-defined hollow interiors with flexible core and shell compositions—such as noble-metal cores, metal-oxide cores, and widespread semiconductor shells—and a flexible anisotropic shape are far from the requirements. In particular, the introduction of catalytic noble metals or metal-oxide nanocrystals (NCs) with isotropic or anisotropic shapes into various hollow semiconductor structures with well-defined morphologies has been rarely reported but is urgently needed. Herein, we propose a strategy involving the careful sulfuration of as-prepared cavity-free core/shell NCs or metal-oxide NCs followed by phosphine-initialized cation-exchange reactions for preparing metal@semiconductor and metal oxide@semiconductor (II-VI) Y–S NCs. The geometry, size, and conformations of the core and shell are fully and independently considered. New and unprecendented metal@semiconductor and metal oxide@semiconductor (II-VI) Y–S NCs are prepared via widespread phosphine-initialized cation-exchange reactions.

关键词： anion exchange cation exchange yolk/shell colloidal hybrid nanocrystals metal/semiconductor

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Laser-induced Damage of 355 nm High-reflective Mirror Caused by Nanoscale Defect

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Journal of Wuhan university of Technology(Materials Science) 2017年第5期32卷 1057-1060页

作者：张东平 ZHU Maodong LI Yan ZHANG Weili CAI Xingmin YE Fan LIANG Guangxing ZHENG Zhuanghao FAN Ping 夏志林 Shenzhen Key Laboratory of Advanced Thin Films and Applications Shenzhen University Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences School of Materials Science and Engineering Wuhan University of Technology

Al2O3/SiO2 multilayer high-reflective（HR） mirrors at 355 nm were prepared by electron beam evaporation, and post-irradiated with Ar/O mixture plasma. The surface defect density, reflective spectra, and laser-induced damage characteristics were measured using optical microscopy, spectrophotometry, a damage testing system, and scanning electron microscopy（SEM）, respectively. The results indicated that moderate-time of irradiation enhanced the laser-induced damage threshold（LIDT） of the mirror, but prolonged irradiation produced surface defects, resulting in LIDT degradation. LIDT of the mirrors initially increased and subsequently decreased with the plasma processing time. SEM damage morphologies of the mirrors revealed that nanoscale absorbing defects in sub-layers was one of the key factors limiting the improvement of LIDT in 355 nm HR mirror.

关键词： laser-induced damage plasma treatment defect

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Recent Progress of Two-Dimensional Thermoelectric Materials

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Nano-Micro Letters 2020年第3期12卷 77-116页

作者： Delong Li Youning Gong Yuexing Chen Jiamei Lin Qasim Khan Yupeng Zhang Yu Li Han Zhang Heping Xie Collaborative Innovation Centre for Optoelectronic Science&Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceInstitute of Microscale OptoelectronicsCollege of Chemistry and Environmental EngineeringShenzhen UniversityShenzhen 518060GuangdongPeople’s Republic of China Shenzhen Key Laboratory of Advanced Thin Films and Applications College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060GuangdongPeople’s Republic of China Department of Mechanical and Mechatronics Engineering University of WaterlooWaterlooONCanada Shenzhen Key Laboratory of Special Functional Materials Shenzhen Engineering Laboratory for Advanced Technology of CeramicsGuangdong Research Center for Interfacial Engineering of Functional MaterialsCollege of Materials Science and EngineeringShenzhen UniversityShenzhen 518060GuangdongPeople’s Republic of China Shenzhen Clean Energy Research Institute Shenzhen UniversityShenzhen 518060GuangdongPeople’s Republic of China

Thermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical ***,the thermoelectric properties of traditional inorganic and organic materials have been significantly improved over the past few *** these compounds,layered two-dimensional(2D)materials,such as graphene,black phosphorus,transition metal dichalcogenides,IVA–VIA compounds,and MXenes,have generated a large research attention as a group of potentially high-performance thermoelectric *** to their unique electronic,mechanical,thermal,and optoelectronic properties,thermoelectric devices based on such materials can be applied in a variety of ***,a comprehensive review on the development of 2D materials for thermoelectric applications,as well as theoretical simulations and experimental preparation,is *** addition,nanodevice and new applications of 2D thermoelectric materials are also *** last,current challenges are discussed and several prospects in this field are proposed.

关键词： Two-dimensional thermoelectric materials Black phosphorus analogue Tin selenide Transition metal dichalcogenides Photothermoelectric effect

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Shift, rotation and scale invariant optical fingerprint verification system with double random phase encoding

Shift, rotation and scale invariant optical fingerprint veri...

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3rd Asian Conference on Artificial Intelligence Technology, ACAIT 2019

作者： Zhuo, Shengkai Jiao, Shuming Zou, Wenbin Wang, Na Li, Xia Guangdong Provincial Key Laboratory of Intelligent Information Processing College of Electronics and Information Engineering Shenzhen University Shenzhen China Shenzhen Key Laboratory of Advanced Machine Learning and Applications Shenzhen University Shenzhen China Nanophotonics Research Centre College of Optoelectronic Engineering Shenzhen University Shenzhen China

Biometric features such as fingerprint images can be authenticated by not only computer algorithms but also optical systems. In previous works, double random phase encoding (DRPE) optical lens system is employed for fingerprint verification. However, such a system can yield authentication failure when the key is generated from a slightly distorted fingerprint image. In this work, a fingerprint image pre-processing scheme for DRPE fingerprint optical authentication system is proposed. Simulated experimental results demonstrate the proposed method has significantly better robustness to shift, rotation and scale variance than some of the conventional DRPE-based approaches. © 2020 Institution of Engineering and Technology. All rights reserved.

关键词： Authentication

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Edge Graph Intelligence: Reciprocally Empowering Edge Networks With Graph Intelligence

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IEEE Communications Surveys and Tutorials 2025年

作者： Zeng, Liekang Ye, Shengyuan Chen, Xu Zhang, Xiaoxi Ren, Ju Tang, Jian Yang, Yang Shen, Xuemin Sherman Sun Yat-sen University School of Computer Science and Engineering Guangzhou510275 China Guangzhou511453 China Ministry of Education School of Computer Science and Engineering Sun Yat-sen University The Key Laboratory of Machine Intelligence and Advanced Computing Guangzhou510275 China Tsinghua University Department of Computer Science and Technology Beijing100084 China Midea Group Shanghai201702 China Guangzhou511453 China Peng Cheng Laboratory Shenzhen518055 China Terminus Group Beijing100027 China University of Waterloo Department of Electrical and Computer Engineering WaterlooONN2L 3G1 Canada

Recent years have witnessed a thriving growth of computing facilities connected at the network edge, cultivating edge networks as a fundamental infrastructure for supporting miscellaneous intelligent services. Meanwhile, Artificial Intelligence (AI) frontiers have extrapolated to the graph domain and promoted Graph Intelligence (GI). Given the inherent relation between graphs and networks, the interdiscipline of graph learning and edge networks, i.e., Edge GI or EGI, has revealed a novel interplay between them - GI aids in optimizing edge networks, while edge networks facilitate GI model deployment. Driven by this delicate closed-loop, EGI is recognized as a promising solution to fully unleash the potential of edge computing power and is garnering growing attention. Nevertheless, research on EGI remains nascent, and there is a soaring demand within both the communications and AI communities for a dedicated venue to share recent advancements. To this end, this paper promotes the concept of EGI, explores its scope and core principles, and conducts a comprehensive survey concerning recent research efforts on this emerging field. Specifically, this paper introduces and discusses: 1) fundamentals of edge computing and graph learning, 2) emerging techniques centering on the closed loop between graph intelligence and edge networks, and 3) open challenges and research opportunities of future EGI. By bridging the gap across communication, networking, and graph learning areas, we believe that this survey can garner increased attention, foster meaningful discussions, and inspire further research ideas in EGI. © 1998-2012 IEEE.

关键词： Contrastive learning

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