Body-contacted short channel partially depleted nMOS Sal devices exhibit higher output impedance and intrinsic gain than their bulk silicon counterparts by nearly a factor of 2 for most body-to-source bias conditions....
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ISBN:
(纸本)2863322451
Body-contacted short channel partially depleted nMOS Sal devices exhibit higher output impedance and intrinsic gain than their bulk silicon counterparts by nearly a factor of 2 for most body-to-source bias conditions. This enhancement is lost when the Sal device moves into the transition region between partially depleted and folly depleted operation, at which point the output impedance and the intrinsic gain approach that of bulk silicon.
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