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Sustainable Technologies for responsible Products and a More Sustainable Future

IEEE TrANSACTIONS ON SEMICONdUCTOr MANUFACTUrING 2024年第4期37卷 433-439页

作者： Nicoleau, S. Champseix, J. -l. Tagarian, d. Boeuf, F. Quinio, P. STMicroelectronics Dept Digital & Smart Power Frontend Technol R&D St F-38926 Crolles France STMicroelectronics Dept Digital & Smart Power Frontend Technol R&D St CH-1204 Geneva Switzerland STMicroelectronics Dept Digital & Smart Power Frontend Technol R&D St F-13106 Rousset France

The impact of human activity on the environment is well documented. While citizens and responsible leaders aim at a more sustainable future, it is our duty as industrial companies to examine our products portfolio from its life cycle perspective. A promising approach is to use sustainable manufacturing technologies, that minimize negative environmental impact, while boosting the product benefits towards decarbonization objectives. This paper enriches our earlier description (Nicoleau et al., 2023) of stmicroelectronics approach in developing sustainable technologies. It starts by examining the global context while putting in perspective the definition of responsible products. Then we will go through the different phases of the product lifecycle by illustrating the involved processes during technology development and product manufacturing. And we will complete our Life Cycle Assessment methodology by illustrating the efforts in striving to reduce our ecological footprint towards our ambition of carbon neutrality by 2027.

关键词： Sustainability responsible product responsible product sustainable technology sustainable technology carbon neutral carbon neutral

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A Monolithic GaN shift register with reduced power consumption 39

A Monolithic GaN shift register with reduced power consumpti...

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39th Conference on design of Circuits and Integrated Systems, dCIS 2024

作者： Marrella, Michele Grasso, Alfio dario rosa, Manuela La Sicurella, Giovanni Catania Italy Technology R&D Smart Power STMicroelectronics Catania Italy

ISBN: (纸本)9798350364392

Gallium Nitride (GaN) semiconductor technology is currently undergoing continuous development due to its promising electrical and physical characteristics, mainly for high power switching applications. As a result, there is a growing demand for circuits implemented in this technology, necessitating monolithic implementation to leverage integration advantages. The production of integrated devices in GaN technology requires the development of auxiliary circuits, both digital and analog, to accompany the power circuits. One limitation of this technology is the unavailability of the P-Type transistor adopted in traditional analog and digital design. In this paper basic digital circuits have been designed with the aim to realize digital memory circuits for storing data. The main objective is to limit the whole power consumption with ad-hoc solutions. digital and analog basic circuits have been examined and optimized with regard to power consumption-efficiency and robustness to power supply and temperature variations. A new shift register topology designed in GaN monolithic technology of stmicroelectronics has been designed and simulated. © 2024 IEEE.

关键词： Gallium nitride

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Hot-Hole Gate Current and degradation in N-Type Lateral drift MOSFETs: Characterization and TCAd Analysis

Hot-Hole Gate Current and Degradation in N-Type Lateral Drif...

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2025 IEEE International reliability Physics Symposium, IrPS 2025

作者： Oldani, Luca Brazzelli, Silvia rossetti, Mattia Smart Power Technology R&d STMicroelectronics Cornaredo Italy

ISBN: (纸本)9798331504779

Hot-hole induced gate current and degradation in advanced n-type lateral drift MOS transistors developed in a 110 nm Bipolar-CMOS-dMOS technology are studied by detailed characterization and TCAd analysis. Hot-hole gate current is characterized by direct measurements and floating-gate method down to the sub-attoampere range. A significant hysteresis in the current versus drain-to-source voltage characteristics is observed due to hole-trapping along the drain drift region. A correlation between ON-state resistance drift and measured gate current is proposed. TCAd simulations including degradation models were carried out and compared with experiments. © 2025 IEEE.

关键词： MOSFET devices

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Evidence of Hot-Hole Induced degradation in Lateral NdrIFT MOSFET: Characterization and TCAd Analysis

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IEEE TrANSACTIONS ON dEVICE ANd MATErIALS rELIABILITY 2022年第2期22卷 258-266页

作者： Oldani, Luca rossetti, Mattia Alagi, Filippo Atzeni, Laura Borella, Fabio Brazzelli, Silvia STMicroelectronics Smart Power Technol R&D I-20010 Cornaredo Italy

The role of secondary hot holes in the degradation of n-channel lateral drift MOSFETs, possibly leading to gate oxide breakdown, is discussed. Trapping of positive charges in the gate and field oxides and the formation of interface states under hot-carrier stress (HCS) have been successfully monitored by means of direct current current-voltage (dCIV) measurements and through gate-drain capacitance measurements. Experimental data have been complemented with technology Computer Aided design (TCAd) analysis. A degradation model including both hot-electrons and secondary hot-holes induced degradation capable of interpreting and reproducing measured data is proposed. Simulations allow to gain insights in the kinetics laws governing charge trapping and interface states generation along the silicon/oxide interface. The drift kinetics of the ON-state resistance have been also characterized and reproduced by simulations.

关键词： degradation Logic gates Hot carriers Voltage measurement Interface states Stress Semiconductor device measurement Hot carrier degradation LdMOSFET hot-holes dCIV ron degradation capacitance degradation

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Switching control to enhance performance in smart protections 32

Switching control to enhance performance in smart protection...

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32nd IEEE International Symposium on Industrial Electronics, ISIE 2023

作者： rosa, Manuela La Sicurella, Giovanni d'Angelo, Salvatore Patti, davide Nicolosi, donata Technology R&D Smart Power STMicroelectronics Catania Italy AMS -General Purpose Analog STMicroelectronics Catania Italy AMS R&D STMicroelectronics Catania Italy

ISBN: (纸本)9798350399714

smart protections, such as E-Fuses (Electronic Fuses), ensure a higher level of quality and reliability in enterprise data storage, industrial and telecom/networking applications. The proposed architecture allows building novel protection devices that operate in case of overvoltage and current limitation conditions. This new approach is based on a switching control performed by four comparators that are smaller in area than the Operational Amplifiers, traditionally used to regulate the Output Voltage and Current in case of fault. A new device (Switching E-Fuse) is designed with considerable enhancement of protection speed. It allows a considerable reduction of silicon area, up to 50%, compared to linear approach and thus an higher profitability than known solutions. Moreover, control speed enhancement strongly reduces stress conditions, thus increasing target application lifetime and reliability. A monolithic silicon demonstrator has been realized using a 180 nm smart power technology. © 2023 IEEE.

关键词： Operational amplifiers

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dielectric Breakdown of in-Package Epoxy Mold Compound under Wet and dry Conditions: Frequency and Temperature dependence 26

Dielectric Breakdown of in-Package Epoxy Mold Compound under...

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26th Electronics Packaging technology Conference, EPTC 2024

作者： Balestra, Luigi riaz, Muhammad Tanveer Giuliano, Federico Cavallini, Andrea reggiani, Susanna Oldani, Luca Guarnera, Simone Salvatore rossetti, Mattia depetro, riccardo ARCES & DEI University of Bologna Bologna Italy Smart Power R&D STMicroelectronics Cornaredo Italy

ISBN: (纸本)9798331522001

Epoxy-based molding compounds (EMCs) are highly valued materials in the electronics industry due to their strong resistance to a variety of mechanical, electrical, and environmental stresses. In literature, EMCs were characterized by using thick bulk samples providing interesting indications on their electrical reliability when employed in high humidity, voltage and temperature conditions. However, in-package performance and reliability with thin EMC structures is lacking. In this work, an interdigitated capacitor embedded into a 24-pin Single-Small-Outline (SSO) package is used as a reference test structure. Samples have undergone rigorous realization and preliminary characterization procedures. The features of EMC layers as thin as 15.7μm have been measured up to the dielectric breakdown by applying dC and AC ramp voltages under different humidity, frequency and temperature. results show that the breakdown strength is higher under dC voltage stress than AC ones. Moreover, the relationship between the breakdown strength and frequency in dry conditions has a statistically significant dependence: the greater the frequency, the lower the breakdown strength. On the contrary, almost no dependency between breakdown strength and temperature has been observed under both wet and dry conditions. The presence of space charge is expected to play a key role in each dependence. Thus, a preliminary TCAd model is proposed to effectively explain the role of space charge formation at different ramp rates. © 2024 IEEE.

关键词： Electronics industry

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Understanding the role of encapsulation layers under wet conditions on the reliability of power devices 8

Understanding the role of encapsulation layers under wet con...

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8th Electron devices technology & Manufacturing Conference (EdTM)

作者： reggiani, Susanna Balestra, Luigi Gnani, Elena rossetti, Mattia depetro, riccardo Univ Bologna ARCES Bologna Italy Univ Bologna DEI Bologna Italy STMicroelectronics Smart Power R&D Cornaredo Italy

ISBN: (纸本)9798350383089;9798350371529

recent characterizations of epoxy-based molding compounds under wet conditions were carried out to understand the role of charge spreading in integrated high-voltage devices. Space-charge injection at high electric fields showed unexpected instabilities and numerical simulations were carried out, showing a significant influence played by the reduced dimensions of the structures under investigation. As a preliminary result, humidity might influence not only the mobility but also the barrier lowering at the electrodes.

关键词： Epoxy-Molding Compound Moisture High Voltage Integrated Circuits TCAd simulations

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Simulation Analysis of the Bit Error Induced by EMI on Galvanically Isolated data-Link Embedded in an Automotive Battery Management IC 25

Simulation Analysis of the Bit Error Induced by EMI on Galva...

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24th International Conference on Electromagnetics in Advanced Applications (ICEAA) / 12th IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications (IEEE APWC)

作者： Ahmadi, Amirhossein Serratoni, Claudio Bendotti, Valerio Crovetti, Paolo S. Politecn Torino Dept Elect & Telecommun Turin Italy STMicroelectronics ADG Smart Power R&D Milan Italy

ISBN: (纸本)9798350320589

In this paper, the susceptibility to electromagnetic interference (EMI) of a battery management system (BMS) used in electric vehicles is addressed. In particular, the effects of EMI on the BMS vertical interface (VIF), i.e., the galvanically isolated data link between different BMS modules are analyzed by transistor-level simulations with reference to direct power injection (dPI) and bulk current injection (BCI) test conditions for the first time. Based on the simulations, the dPI and BCI susceptibility levels of two different VIF architectures are estimated, and different failure mechanisms are highlighted.

关键词： Electric Vehicle (EV) Battery Management System (BMS) Vertical Interface (VIF) Electromagnetic Compatibility (EMC) Transistor-level simulation Integrated Circuit EMC Electromagnetic Interference (EMI) direct power Injection (dPI) Bulk Current Injection (BCI)

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Hot-Hole Gate Current and degradation in N-Type Lateral drift MOSFETs: Characterization and TCAd Analysis

Hot-Hole Gate Current and Degradation in N-Type Lateral Drif...

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Annual International Symposium on reliability Physics

作者： Luca Oldani Silvia Brazzelli Mattia rossetti Smart Power Technology R&D STMicroelectronics Cornaredo Italy

ISBN: (数字)9798331504779

ISBN: (纸本)9798331504786

关键词： degradation MOSFET Current measurement Layout Implants Hot carriers Logic gates Electrical resistance measurement Stress Stress measurement

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Static Characterization of the X-Hall Current Sensor in BCd10 technology 25

Static Characterization of the X-Hall Current Sensor in BCD1...

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25th IMEKO TC-4 International Symposium on Measurement of Electrical Quantities, IMEKO TC-4 2022 and 23rd International Workshop on AdC and dAC Modelling and Testing, IWAdC 2022

作者： Gibiino, Gian Piero Crescentini, Marco Marchesi, Marco Cogliati, Marco romani, Aldo Traverso, Pier Andrea University of Bologna Italy University of Bologna Italy STMicroelectronics Analog and Smart Power Technology R&D Cornaredo Italy

ISBN: (纸本)9781713862833

This work presents on-wafer characterization measurements of the X-Hall current sensor architecture implemented in 90-nm BCd10 silicon process by stmicroelectronics. With respect to a previous implementation, technological improvements in terms of active region, isolation layers, and metal stack configuration result in a substantially improved sensitivity. In addition, it is reported that the sensitivity can be further improved by applying a negative voltage to the depletion layer. © 2022 25th IMEKO TC-4 International Symposium on Measurement of Electrical Quantities, IMEKO TC-4 2022 and 23rd International Workshop on AdC and dAC Modelling and Testing, IWAdC 2022. All rights reserved.

关键词： Silicon wafers

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