This paper presents a differential digitally controlled crystal oscillator with differential 26 MHz sine wave *** DCXO achieves a phase noise of-138 d Bc/Hz at 1 k Hz offset and-152 d Bc/Hz at 10 k Hz *** it has a ...
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ISBN:
(纸本)9781509066261;9781509066254
This paper presents a differential digitally controlled crystal oscillator with differential 26 MHz sine wave *** DCXO achieves a phase noise of-138 d Bc/Hz at 1 k Hz offset and-152 d Bc/Hz at 10 k Hz *** it has a ±32 ppm fine tuning range with 0.07 ppm tuning step,which satisfy the GSM,WLAN and WCDMA *** circuit is implemented by differential architecture with a cheap off-chip *** overall power consumption is 3.7 m A with 1.6 V power supply.
Placement is a critical stage in VLSI physical design, especially for routability optimization. Due to the large scale and high integration introduced by the advanced semiconductor manufacturing technology, there rema...
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ISBN:
(纸本)9798350323481
Placement is a critical stage in VLSI physical design, especially for routability optimization. Due to the large scale and high integration introduced by the advanced semiconductor manufacturing technology, there remains a significant challenge in routability in the placement stage, which will affect the subsequent routing process. This paper proposes a placement framework, called PUFFER, to optimize routability by cell padding and strategy exploration. The framework first estimates congestion by imitating the behaviors of routing detours and clustered cell spreading. Then it calculates cell padding based on multiple features inspired by the characteristics of convolutional and graph neural networks. Besides, it applies a Bayesian-based method to explore a better placement strategy. Compared with a commercial tool and the state-of-the-art academic RePlAce placer, experiments on industrial benchmarks show that our framework achieves the best routability on average, with a 2.7× speedup over the commercial tool.
A novel 40-Gb/s constant envelope optical frequency shift keying (FSK) transmitter and the transmission characteristics are investigated both by simulation and experiment. Meanwhile, to increase the spectrum efficie...
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A novel 40-Gb/s constant envelope optical frequency shift keying (FSK) transmitter and the transmission characteristics are investigated both by simulation and experiment. Meanwhile, to increase the spectrum efficiency of FSK, we propose a novel optical minimum-shift keying (MSK) scheme and analyze its per-formance compared with other MSK schemes and other traditional modulation formats. Simulation and experimental results show that the novel FSK scheme could be a potential candidate for the future high speed transmission and label switching systems. And the novel MSK scheme deserves future deep research for its potential excellent performance.
Hydrogen ions are implanted into Pb(Zro.3Tio.7)03 1014 ions/cm^2. Pseudo-antiferroelectric behaviour in thin films at the energy of 40keV with a flux of 5 x the implanted thin films is observed, as confirmed by the...
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Hydrogen ions are implanted into Pb(Zro.3Tio.7)03 1014 ions/cm^2. Pseudo-antiferroelectric behaviour in thin films at the energy of 40keV with a flux of 5 x the implanted thin films is observed, as confirmed by the measurements of polarization versus electric hysteresis loops and capacitance versus voltage curves. X-ray diffrac- tion patterns show the film structures before and after H+ implantation both to be perovskite of a tetragonal symmetry. These findings indicate that hydrogen ions exist as stable dopants within the films. It is believed that the dopants change domain-switching behaviour via the boundary charge compensation. Meanwhile, time dependence of leakage current density after time longer than lOs indicates the enhancement of the leakage cur- rent nearly in one order for the implanted film, but the current at time shorter than i s is mostly the same as that of the original film without the ionic implantation. The artificial tailoring of the antiferroelectric behaviour through H+ implantation in ferroelectric thin films is finally proven to be achievable for the device application of high-density charge storage.
A novel scheme to generate, transmit, and receive an optical orthogonal frequency division multiplexing (OFDM) continuous phase modulation (CPM) signal, which is combining minimum shift keying (MSK) coding with ...
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A novel scheme to generate, transmit, and receive an optical orthogonal frequency division multiplexing (OFDM) continuous phase modulation (CPM) signal, which is combining minimum shift keying (MSK) coding with OFDM optical modulation, for downlink application in a 4×2.5-Gb/s wavelength division multiplexing (WDM) passive optical access network, is proposed and experimentally validated. We also realize wavelength remodulation for carrying upstream on-off keying (OOK) data to reduce the cost budget at the optical network unit. The experimental results show that the power penalties for the downlink and the uplink data after transmission over 25-km SMF-28 fiber are 0.1 dB and smaller than 0.4 dB, respectively.
We propose a novel advanced orthogonal modulation format dark return-to-zero frequency shift keying/differential phase shift keying (DRZ-FSK/DPSK) and its realization scheme. The DRZ-FSK/DPSK is generated by the com...
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We propose a novel advanced orthogonal modulation format dark return-to-zero frequency shift keying/differential phase shift keying (DRZ-FSK/DPSK) and its realization scheme. The DRZ-FSK/DPSK is generated by the combination of a 40-Gb/s return-to-zero (RZ) signal and a DRZ signal which is converted from the RZ using a semiconductor optical amplifier (SOA) based on nonlinear cross polarization rotation (XPR) and then re-modulated by high-bit-rate DPSK at 40 Gb/s. The feasibility of the scheme is exper-imentally demonstrated. Bit error rate (BER) results of the total 80-Gb/s DRZ-FSK/DPSK orthogonal modulation signal with a subsequent 100-km single-mode fiber (SMF) transmission link show its potential for future high-speed long-haul optical communication.
By exploring symmetric cryptographic data level and instruction-level parallelism, the reconfigurable processor architecture for symmetric ciphers is presented based on Very-long instruction word(VLIW) structure. The ...
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By exploring symmetric cryptographic data level and instruction-level parallelism, the reconfigurable processor architecture for symmetric ciphers is presented based on Very-long instruction word(VLIW) structure. The application-specific instruction-set system for symmetric ciphers is proposed. As for the same arithmetic operation of symmetric ciphers, eleven kinds of reconfigurable cryptographic arithmetic units are designed by the reconfigurable technology. As to the requirement of high energy-efficient design, the loop buffer structure for instruction fetching unit is proposed to reduce the power consumption significantly with the same frequency as conventional, meanwhile, the chain processing mechanism is proposed to improve the cryptographic throughput without any area overhead. It has been fabricated with 0.18μm CMOS technology. The result shows that the processor can work up to 200 MHz, and the fourteen kinds of cryptographic algorithms were mapped in the processor, the encryption throughput of AES, SNOW2.0 and SHA2 algorithm can achieve 1.19 Gbps, 1.05 Gbps, and 407 Mbps respectively.
Resistive switching characteristics of CuxO films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by r...
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Resistive switching characteristics of CuxO films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating.
One of the hallmarks of consumer electronics (CE) products and systems is that, while the product concept is often simple, these products themselves are never simple in their engineering aspects. This short article ha...
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One of the hallmarks of consumer electronics (CE) products and systems is that, while the product concept is often simple, these products themselves are never simple in their engineering aspects. This short article has only covered three of a much larger number of patents related to the CD drive, and the full engineering details are far more complex and intertwined. But this does serve as a useful example illustrating the complexity and holistic nature of many consumer electronics products.
A novel circuit is presented in order to enhance the slew rate of two-stage operational amplifiers. The enhancer utilizes the class-AB input stage to improve current efficiency, while it works on an open loop with reg...
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A novel circuit is presented in order to enhance the slew rate of two-stage operational amplifiers. The enhancer utilizes the class-AB input stage to improve current efficiency, while it works on an open loop with regard to the enhanced amplifier so that it has no effect on the stability of the amplifier. During the slewing period, the enhancer detects input differential voltage of the amplifier, and produces external enhancement currents for the amplifier, driving load capacitors to charge/discharge faster. Simulation results show that, fora large input step, the enhancerreduces settling time by nearly 50%. When the circuit is employed in a sample-and-hold circuit, it greatly improves the spur-free dynamic range by 44.6 dB and the total harmonic distortion by 43.9 dB. The proposed circuit is very suitable to operate under a low voltage (1.2 V or below) with a standby current of 200 μA.
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