检索结果-内蒙古大学图书馆

arXiv 2020年

作者： Suo, Peng Zhang, Huiyun Yan, Shengnan Zhang, Wenjie Fu, Jibo Lin, Xian Hao, Song Jin, Zuanming Zhang, Yuping Zhang, Chao Miao, Feng Liang, Shi-Jun Ma, Guohong Department of Physics Shanghai University Shanghai200444 China College of Electronics and Information Engineering Shandong University of Science and Technology Qingdao266590 China National Laboratory of Solid State Microstructures School of Physics Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China School of Physics University of Wollongong WollongongNSW2522 Australia Terahertz Technology Innovation Research Institute Terahertz Spectrum and Imaging Technology Cooperative Innovation Center Shanghai Key Lab of Modern Optical System University of Shanghai for Science and Technology 516 JunGong Road Shanghai200093 China STU SIOM Joint Laboratory for Superintense Lasers and the Applications Shanghai201210 China

As a newly emergent type-Ⅱ Dirac semimetal, Platinum Telluride (PtTe2) stands out from other 2D noble-transition-metal dichalcogenides for the unique band structure and novel physical properties, and has been studied extensively. However, the ultrafast response of low energy quasiparticle excitation in terahertz (THz) frequency remains nearly unexplored yet. Herein we employ optical pump-terahertz (THz) probe spectroscopy (OPTP) to systematically study the photocarrier dynamics of PtTe2 thin films with varying pump fluence, temperature, and film thickness. Upon photoexcitation the THz photoconductivity (PC) of PtTe2 films show abrupt increase initially, while the THz PC changes into negative value in a subpicosecond time scale, followed by a prolonged recovery process that lasted a few ns. The magnitude of both positive and negative THz PC response shows strongly pump fluence dependence. We assign the unusual negative THz PC to the formation of small polaron due to the strong electron-phonon (e-ph) coupling, which is further substantiated by temperature and film thickness dependent measurements. Moreover, our investigations give a subpicosecond time scale of sequential carrier cooling and polaron formation. The present study provides deep insights into the underlying dynamics evolution mechanisms of photocarrier in type-Ⅱ Dirac semimetal upon photoexcitation, which is crucial importance for designing PtTe2-based optoelectronic devices. Copyright © 2020, The Authors. All rights reserved.

关键词： Photoconductivity

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Geometric Filterless Photodetectors for Mid-infrared Spin Light

arXiv

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arXiv 2022年

作者： Wei, Jingxuan Chen, Yang Li, Ying Li, Wei Xie, Junsheng Lee, Chengkuo Novoselov, Kostya S. Qiu, Cheng-Wei Department of Electrical and Computer Engineering National University of Singapore Singapore117583 Singapore CAS Key Laboratory of Mechanical Behaviour and Design of Materials Department of Precision Machinery and Precision Instrumentation University of Science and Technology of China Hefei230026 China Interdisciplinary Center for Quantum Information State Key Laboratory of Modern Optical Instrumentation ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou310027 China International Joint Innovation Center Key Lab of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang Zhejiang University Haining314400 China GPL Photonics Lab State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun130033 China Center for Intelligent Sensors and MEMS National University of Singapore Singapore117608 Singapore Institute for Functional Intelligent Materials National University of Singapore Singapore117544 Singapore

Free-space circularly polarized light (CPL) detection, requiring polarizers and waveplates, has been well established, while such spatial degree of freedom is unfortunately absent in integrated on-chip optoelectronics. So far, those reported filterless CPL photodetectors suffer from the intrinsic small discrimination ratio, vulnerability to the non-CPL field components, and low responsivity. Here, we report a distinct paradigm of geometric photodetectors in mid-infrared exhibiting colossal discrimination ratio, close-to-perfect CPL-specific response, a zero-bias responsivity of 392 V/W at room temperature, and a detectivity of ellipticity down to 0.03o Hz−1/2. Our approach employs plasmonic nanostructures array with judiciously designed symmetry, assisted by graphene ribbons to electrically read their near-field optical information. This geometry-empowered recipe for infrared photodetectors provides a robust, direct, strict, and high-quality solution to on-chip filterless CPL detection and unlocks new opportunities for integrated functional optoelectronic devices. Copyright © 2022, The Authors. All rights reserved.

关键词： Photodetectors

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MoSi2N4: An emerging 2D electronic material with protected band edge states and dielectric tunable quasiparticle and optical properties

arXiv

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arXiv 2021年

作者： Wu, Yabei Tang, Zhao Xia, Weiyi Gao, Weiwei Jia, Fanhao Zhang, Yubo Zhu, Wenguang Zhang, Wenqing Zhang, Peihong Department of Physics Shenzhen Institute for Quantum Science & Engineering Southern University of Science and Technology Guangdong Shenzhen518055 China Guangdong Provincial Key Lab for Computational Science and Materials Design Shenzhen Municipal Key Lab for Advanced Quantum Materials and Devices Southern University of Science and Technology Guangdong Shenzhen518055 China Icqd Hefei National Laboratory for Physical Science at the Microscale Key Laboratory of Strongly-Coupled Quantum Matter Physics Chinese Academy of Sciences Department of Physics Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China Anhui Hefei230026 China Department of Physics University at Buffalo State University of New York BuffaloNY14260 United States Department of Physics Dalian University of Technology Liaoning Dalian116024 China International Centre for Quantum and Molecular Structures Materials Genome Institute Department of Physics Shanghai University 99 Shangda Road Shanghai200444 China

As it is the case for all low-dimensional materials, the low energy electronic structure of two-dimensional (2D) materials are inherently prone to environmental perturbations. While there are applications (e.g., sensors) that exploit this property, the fact that the band-edge states of 2D materials are susceptible to often unpredictable environmental coupling effects may pose significant challenges to their practical applications in electronic or optoelectronic devices. A 2D material couples with its environment through two mechanisms: local chemical coupling arising from the overlap and hybridization of wave functions, and nonlocal dielectric screening effects that renormalize the Coulomb interaction in the system. The local chemical coupling, which may arise from the (often unintentional) surface adsorption or interfacial chemical coupling, is difficult to predict or control experimentally. Nonlocal dielectric screening effects, on the other hand, can be tuned by choosing the substrates or layer thickness in a controllable manner. Therefore, a compelling 2D electronic material should offer band edge states that are robust against local chemical coupling effects. Here we demonstrate that the recently synthesized MoSi2N4is an ideal 2D semiconductor with robust band edge states protected from capricious environmental chemical coupling effects. We have carried out thorough density functional theory (DFT) and many-body perturbation theory (MBPT) calculations to illustrate how the band edge states of MoSi2N4are essentially shielded from direct chemical coupling to its environment, and, at the same time, the quasiparticle and optical properties of MoSi2N4can be modulated through the nonlocal dielectric screening effects. This unique property, together with the moderate band gap and the thermodynamic and mechanical stability of this material, may pave the way for a range of applications in areas including energy, 2D electronics, and optoelectronics. Copyright © 2021, The

关键词： Mechanical stability

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Neutron powder diffraction study on the non-superconducting phases of ThFeAsN1−xOx (x = 0.15, 0.6) iron pnictide

arXiv

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arXiv 2019年

作者： Mao, Huican Hu, Bingfeng Xia, Yuanhua Chen, Xiping Wang, Cao Wang, Zhicheng Cao, Guanghan Li, Shiliang Luo, Huiqian Department of Physics and Center for Advanced Quantum Studies Beijing Normal University Beijing100875 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing100190 China Key Laboratory of Neutron Physics Institute of Nuclear Physics and Chemistry China Academy of Engineering Physics Mianyang621999 China Department of Physics Shandong University of Technology Zibo255049 China Department of Physics State Key Lab of Silicon Materials Zhejiang University Hangzhou310027 China Collaborative Innovation Centre of Advanced Microstructures Nanjing210093 China Songshan Lake Materials Laboratory Dongguan Guangdong523808 China School of Physical Sciences University of Chinese Academy of Sciences Beijing100190 China

We use neutron powder diffraction to study on the non-superconducting phases of ThFeAsN1−xOx with x = 0.15, 0.6. In our previous results on the superconducting phase ThFeAsN with Tc = 30 K, no magnetic transition is observed by cooling down to 6 K, and possible oxygen occupancy at the nitrogen site is shown in the refinement(H. C. Mao et al., EPL, 117, 57005 (2017)). Here, in the oxygen doped system ThFeAsN1−xOx, two superconducting region (0 6 x 6 0.1 and 0.25 6 x 6 0.55) have been identified by transport experiments (B. Z. Li et al., J. Phys.: Condens. Matter 30, 255602 (2018)). However, within the resolution of our neutron powder diffraction experiment, neither the intermediate doping x = 0.15 nor the heavily overdoped compound x = 0.6 shows any magnetic order from 300 K to 4 K. Therefore, while it shares the common phenomenon of two superconducting domes as most of 1111-type iron-based superconductors, the magnetically ordered parent compound may not exist in this nitride family. Copyright © 2019, The Authors. All rights reserved.

关键词： Neutrons

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Erratum: “Design and test of a flat-top magnetic field system driven by capacitor banks” [Rev. Sci. Instrum. 85, 045106 (2014)]

引用

Review of Scientific Instruments 2014年第4期85卷

作者： Fan Jiang Tao Peng Houxiu Xiao Jianlong Zhao Yuan Pan Fritz Herlach Liang Li 1Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan China 2State Key Laboratory of Advanced Electromagnetic Engineering and Technology Huazhong University of Science and Technology Wuhan China 3Katholieke Universiteit Leuven Celestijnenlaan 200D B-3001 Leuven Belgium

The original paper1 was published online on 7 April 2014, and the information of corresponding author and the electronic mail of corresponding author were misse

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13-3: Top-emitting Quantum-dot Light-emitting Diodes with all the p-i-n Functional Layers Deposited by Solution Processes

引用

SID Symposium Digest of Technical Papers 2017年第1期48卷

作者： Yibin Jiang Shuming Chen Hoi-Sing Kwok State Key Lab on Advanced Displays and Optoelectronics Department of Electronic and Computer Engineering The Hong Kong University of Science & Technology Clear Water Bay Kowloon Hong Kong Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen 518055 PR China

A green top-emitting quantum-dot light-emitting diode (TQLED) with conventional structure is demonstrated in this study with all its functional layers, including hole transportation layer, emitting layer and electron transportation layer, fabricated by spin-coating processes. This green QLED exhibits an external quantum efficiency (EQE) of 6.4 % and a maximum brightness of 200000 cd/m 2 , which is the highest values reported for green TQLEDs in literature. Besides, this is the first report of all-solution-processed TQLEDs.

关键词： quantum-dot light-emitting diodes top-emitting spin-coating all-solution-processed

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Polarization-Orthogonal Nondegenerate Plasmonic Higher-Order Topological states

arXiv

引用

arXiv 2021年

作者： Li, Yuanzhen Xu, Su Zhang, Zijian Yang, Yumeng Xie, Xinrong Ye, Wenzheng Liu, Feng Xue, Haoran Jing, Liqiao Wang, Zuojia Chen, Qi-Dai Sun, Hong-Bo Li, Erping Chen, Hongsheng Gao, Fei Interdisciplinary Center for Quantum Information State Key Laboratory of Extreme Photonics and Instrumentation ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou310027 China International Joint Innovation Center The Electromagnetics Academy Zhejiang University Zhejiang University Haining314400 China State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University 2699 Qianjin Street Changchun130012 China Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore637371 Singapore State Key Laboratory of Precision Measurement Technology and Instruments Department of Precision Instrument Tsinghua University Haidian Beijing100084 China Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang Jinhua Institute of Zhejiang University Zhejiang University Jinhua321099 China Shaoxing Institute of Zhejiang University Zhejiang University Shaoxing312000 China

Photonic topological states, providing light-manipulation approaches in robust manners, have attracted intense attention. Connecting photonic topological states with far-field degrees of freedom (DoFs) has given rise to fruitful phenomena. Recently emerged higher-order topological insulators (HOTIs), hosting boundary states two or more dimensions lower than those of bulk, offer new paradigms to localize/transport light topologically in extended dimensionalities. However, photonic HOTIs have not been related to DoFs of radiation fields yet. Here, we report the observation of polarization-orthogonal second-order topological corner states at different frequencies on a designer-plasmonic Kagome metasurface in the far field. Such phenomenon stands on two mechanisms, i.e., projecting the far-field polarizations to the intrinsic parity DoFs of lattice modes and the parity splitting of the plasmonic corner states in spectra. We theoretically and numerically show that the parity splitting originates from the underlying inter-orbital coupling. Both near-field and far-field experiments verify the polarization-orthogonal nondegenerate second-order topological corner states. These results promise applications in robust optical single photon emitters and multiplexed photonic devices. Copyright © 2021, The Authors. All rights reserved.

关键词： Polarization

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Power System Stochastic Unit Commitment Model for Large-scare Wind Power Integration Considering Demand Side Resources

引用

Journal of Physics: Conference Series 2019年第1期1267卷

作者： Wenxia Liu Suhua Lou Shuyun Wang Xianggang He Xinfu Song Grid Planning & Research Center Guizhou Power Grid Co. LTD. Guiyang 550003 Guizhou Province China State Key Laboratory of Advanced Electromagnetic Engineering and Technology (College of Electrical and Electronic Engineering Huazhong University of Science and Technology) Wuhan 430074 Hubei Province China Economy and Technology Research Institute of State Grid Xinjiang Electric Power Co. LTD. Urumqi 830002 Xinjiang China

As the uncertainty output characteristics of wind power, the large-scale wind power integrated to the grid, has brought new challenges to power system operation. Based on the uncertainty characteristics of wind power, this paper establishes the wind power output model, then focuses on the positive effects of price-based demand response (PDR) and incentive-based demand response (IDR), which are allowed to participate in the power balance, on the unit commitment (UC) with high wind power penetration, and establishes the PDR and IDR models. Based on the chance constrained programming, this paper proposes a stochastic UC model with large-scale wind power integration considering demand side resources(DSR). Stochastic simulation combined with particle swarm optimization (PSO) algorithm was presented to solve this model. At last, the model is proved feasibly and effectively by testing the IEEE 10 machines system.

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Optical VPN Connecting ONUs in Different PONs

Optical VPN Connecting ONUs in Different PONs

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Optical Fiber Communication - OFC 2007 Collocated National Fiber Optic Engineers Conference (OFC 2007), vol.2

作者： Yue Tian Xiangqing Tian Lufeng Leng Tong Ye Yikai Su State Key Lab of Advanced Optical Communication Systems and Networks Department of Electronic Engineering Shanghai Jiao Tong University 800 Dongchuan Rd Shanghai 200240 China New York City College of Technology City University of New York Brooklyn NY 11201 USA

We demonstrate optical-layer virtual private networking in a new super-PON architecture using a dynamic wavelength reflector. The optical VPN enables communications among different PONs.

ISBN: (纸本)1557528306

We demonstrate optical-layer virtual private networking in a new super-PON architecture using a dynamic wavelength reflector. The optical VPN enables communications among different PONs.

关键词： Arrayed waveguide gratings Bit error rate Fiber Bragg gratings Optical amplification Optical networks Passive optical networks Fiber optics and optical communications (060.0060) Fiber optics communications (060.2330) Networks (060.4250)

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Erratum: “The effects of match circuit on the breakdown process of capacitively coupled plasma driven by radio frequency” [J. Appl. Phys. 131, 153301 (2022)]

引用

Journal of Applied Physics 2022年第20期131卷

作者： Hao Wu Zhaoyu Chen Shimin Yu Qixuan Wang Xiandi Li Wei Jiang Ya Zhang 1School of Physics Huazhong University of Science and Technology Wuhan 430074 China 2Department of Physics Wuhan University of Technology Wuhan 430070 China 3International Joint Research Laboratory of Magnetic Confinement Fusion and Plasma Physics State Key Laboratory of Advanced Electromagnetic Engineering and Technology School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan 430074 China

There are a few typos in the equations of our published article. We apologize for the inconvenience the mistakes may have caused by our careless typing. It shou

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