检索结果-内蒙古大学图书馆

arXiv 2021年

作者： Xu, Guoqiang Yang, Yihao Zhou, Xue Chen, Hongsheng Alù, Andrea Qiu, Cheng-Wei Department of Electrical and Computer Engineering National University of Singapore Kent Ridge117583 Singapore Interdisciplinary Center for Quantum Information State Key Laboratory of Modern Optical Instrumentation ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou China School of Computer Science and Information Engineering Chongqing Technology and Business University Chongqing400067 China ZJU-Hangzhou Global Science and Technology Innovation Center Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang Zhejiang University Hangzhou310027 China International Joint Innovation Center ZJU-UIUC Institute The Electromagnetics Academy at Zhejiang University Zhejiang University Haining314400 China Photonics Initiative Advanced Science Research Center City University of New York New YorkNY10031 United States Physics Program Graduate Center of the City University of New York New YorkNY10016 United States

Topological insulating phases are usually found in periodic lattices stemming from collective resonant effects, and it may thus be expected that similar features may be prohibited in thermal diffusion, given its purely dissipative and largely incoherent nature. We report the diffusion-based topological states supported by spatiotemporally-modulated advections stacked over a fluidic surface, thereby imitating a periodic propagating potential in effective thermal lattices. We observe edge and bulk states within purely nontrivial and trivial lattices, respectively. At interfaces between these two types of lattices, the diffusive system exhibits interface states, manifesting inhomogeneous thermal properties on the fluidic surface. Our findings establish a framework for topological diffusion and thermal edge/bulk states, and it may empower a distinct mechanism for flexible manipulation of robust heat and mass transfer. © 2021, CC BY.

关键词： Interface states

来源：评论

学校读者我要写书评

暂无评论

Preparation and Oxidation of ZrB2/SiC/Zr2Al4C5 Multi-phase Ceramics with Spark Plasma Sintering

引用

Journal of Physics: Conference Series 2013年第1期419卷

作者： Qilong Guo Junguo Li Zhiyu Ma Ye Nie Qiang Shen Lianmeng Zhang State Key Lab of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 People's Republic of China Sinoma International Engineering CO. Ltd.(Nanjing) 106 Jiangjun avenue Nanjing Jiangsu 211100 China

The ZrB2/SiC/Zr2Al4C5 multi-phase ceramics were fabricated by spark plasma sintering (SPS) at 1800 °C for 3 min under 20 MPa in an vacuum. Oxidation behavior of multi-phase ceramics were investigated using thermo gravimetric analysis (TGA) from 20 °C to 1500 °C and muffle furnace in stagnant air at 1200 °C. Samples were analyzed after oxidation by X-ray diffraction (XRD), scanning electron microscopy (SEM) along with energy dispersive spectroscopy (EDS) to determine the reaction products and to observe the microstructure. The results showed that the aluminium borate and mullite crystallize on the surface in the samples oxidized. The effect of Zr2Al4C5 content on the oxidation resistance of the ZrB2 ceramics were discussed respectively, and oxidation mechanism was also analysised.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Anomalous Nernst effect induced terahertz emission in a single ferromagnetic film

arXiv

引用

arXiv 2023年

作者： Feng, Zheng Tan, Wei Jin, Zuanming Chen, Yi-Jia Zhong, Zhangfeng Zhang, Liang Sun, Song Tang, Jin Jiang, Yexing Wu, Po-Hsun Cheng, Jun Miao, Bingfeng Ding, Haifeng Wang, Dacheng Zhu, Yiming Guo, Liang Shin, Sunmi Ma, Guohong Hou, Dazhi Huang, Ssu-Yen Microsystem & Terahertz Research Center CAEP Chengdu610200 China Terahertz Technology Innovation Research Institute Terahertz Spectrum and Imaging Technology Cooperative Innovation Center Shanghai Key Lab of Modern Optical System University of Shanghai for Science and Technology Shanghai200093 China Department of Physics National Taiwan University Taipei10617 Taiwan National Laboratory of Solid State Microstructures Department of Physics Nanjing University Nanjing210093 China Department of Mechanical and Energy Engineering Southern University of Science and Technology Shenzhen518055 China School of Physics and Optoelectronics Engineering Science Anhui University Hefei230601 China Department of Mechanical Engineering National University of Singapore 117516 Singapore Department of Physics Shanghai University Shanghai200444 China ICQD Hefei National Laboratory for Physical Sciences at Microscale University of Science and Technology of China Hefei230026 China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China Department of Physics University of Science and Technology of China Hefei230026 China

By developing a bidirectional-pump terahertz (THz) emission spectroscopy, we reveal an anomalous Nernst effect (ANE) induced THz emission in a single ferromagnetic film. Based on the distinctive symmetry of the THz signals, ANE is unequivocally distinguished from the previously attributed ultrafast demagnetization and anomalous Hall effect mechanisms. A quantitative method is established to separate the different contributions, demonstrating a significant ANE contribution that even overwhelms other competing mechanisms. Our work not only clarifies the origin of the ferromagnetic-based THz emission, but also offers a fertile platform for investigating the ultrafast magnetism and THz spintronics. © 2023, CC BY-NC-SA.

关键词： Emission spectroscopy

来源：评论

学校读者我要写书评

暂无评论

Superconductivity and Charge-density-wave-like Transition in Th2Cu4As5

arXiv

引用

arXiv 2023年

作者： Duan, Qing-Chen Liu, Shao-Hua Li, Bai-Zhuo Meng, Jiao-Jiao Yang, Wu-Zhang Liu, Yi Lin, Yi-Qiang Wu, Si-Qi Lu, Jia-Yi Bao, Jin-Ke Xiao, Yu-Sen Zhao, Xin-Yu Mei, Yu-Xue Sun, Yu-Ping Yu, Dan Tan, Shu-Gang Jing, Qiang Zhong, Rui-Dan Chen, Yong-Liang Zhao, Yong Ren, Zhi Wang, Cao Cao, Guang-Han School of Physics and Optoelectronic Engineering Shandong University of Technology Zibo255000 China School of Physics Interdisciplinary Center for Quantum Information State Key Lab of Silicon Materials Zhejiang University Hangzhou310058 China School of Science Westlake University Hangzhou310064 China Department of Applied Physics Key Laboratory of Quantum Precision Measurement of Zhejiang Province Zhejiang University of Technology Hangzhou310023 China School of Physics Hangzhou Key Laboratory of Quantum Matters Hangzhou Normal University Hangzhou311121 China Tsung-Dao Lee Institute School of Physics and Astronomy Shanghai Jiao Tong University Shanghai200240 China Collaborative Innovation Centre of Advanced Microstructures Nanjing University Nanjing210093 China School of Physical Science and Technology Southwest Jiaotong University Chengdu610031 China College of Physics and Energy Fujian Normal University Fuzhou350117 China

We report the synthesis, crystal structure, and physical properties of a novel ternary compound, Th2Cu4As5. The material crystallizes in a tetragonal structure with lattice parameters a = 4.0716(1) Å and c = 24.8131(4) Å. Its structure can be described as an alternating stacking of fluorite-type Th2As2 layers with antifluorite-type double-layered Cu4As3 slabs. The measurement of electrical resistivity, magnetic susceptibility and specific heat reveals that Th2Cu4As5 undergoes bulk superconducting transition at 4.2 K. Moreover, all these physical quantities exhibit anomalies at 48 K, where the Hall coefficient change the sign. These findings suggest a charge-density-wave-like (CDW) transition, making Th2Cu4As5 a rare example for studying the interplay between CDW and superconductivity. © 2023, CC BY-NC-ND.

关键词： Copper compounds

来源：评论

学校读者我要写书评

暂无评论

Observation of Structural & Chemical Configuration, Lattice Distortion, Defect Dynamics and Phase Evolution in High-Entropy Transition Metal Carbides (HE-MAX)

引用

Microscopy and Microanalysis 2024年第SUPPLEMENT_1期30卷

作者： Zhu, Xiangyu Wu, Zijiao Wang, Qingxiao Wu, Yuan Liu, Xiongjun Wang, Hui Jiang, Suihe Lu, Zhaoping Kim, Moon J Department of Materials Science and Engineering The University of Texas at Dallas Richardson Texas USA Beijing Advanced Innovation Center for Materials Genome Engineering State Key Laboratory for Advanced Metals and Materials University of Science and Technology Beijing Beijing People’s Republic of China Imaging and Characterization Core Lab King Abdullah University of Science and Technology Thuwal Saudi Arabia

来源：评论

学校读者我要写书评

暂无评论

Effects of Back-Reflectors on a-Si: H Solar Cells

引用

Journal of Physics: Conference Series 2021年第1期1965卷

作者： Zhihua Hu Abuduwayiti Aierken Hongwei Diao Key Lab. of Advanced Technology & Preparation for Renewable Energy Materials State Ministry of Education Yunnan Key Lab. of Rural Energy Engineering School of Energy and Environmental Sciences Yunnan Normal University Kunming Yunnan P.R. China Institute of Electrical Engineering Chinese Academic of Sciences Beijing P.R. China

ZAO (ZnO: Al)/Al and ITO/Ag complex back-reflectors were successfully applied to substrate nip and superstrate pin amorphous silicon solar cells respectively. As a result, the short circuit current (Isc) for a cell with a complex back-reflector increases significantly as compared with a cell without a complex back-reflector. For a superstrate pin cell prepared on SnO2 coated glass, the short-circuit current even increases up to 30%.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Selective Activation of Lattice Oxygen Site Through Coordination engineering to Boost the Activity and Stability of Oxygen Evolution Reaction

引用

Angewandte Chemie 2024年第36期136卷

作者： Guikai Zhang Jiajing Pei Yueshuai Wang Guowei Wang Yongsheng Wang Wenchao Liu Jinfeng Xu Pengfei An Huan Huang Lirong Zheng Shengqi Chu Juncai Dong Jing Zhang Beijing Synchrotron Radiation Facility Institute of High Energy Physics Chinese Academy of Sciences Beijing 100049 China School of Nuclear Science and Technology University of Chinese Academy of Sciences Beijing 100049 China Beijing Key Lab of Microstructure and Property of Advanced Materials College of Materials Science and Engineering Beijing University of Technology Beijing 100124 China State Key Lab of Organic-Inorganic Composites and Beijing Advanced Innovation Center for Soft Matter Science and Engineering Beijing University of Chemical Technology Beijing 100029 China

Although Ru-based materials are among the outstanding catalysts for the oxygen evolution reaction (OER), the instability issue still haunts them and impedes the widespread application. The instability of Ru-based OER catalysts is generally ascribed to the formation of soluble species through the over-oxidation of Ru and structural decomposition caused by involvement of lattice oxygen. Herein, an effective strategy of selectively activating the lattice oxygen around Ru site is proposed to improve the OER activity and stability. Our synthesized spinel-type electrocatalyst of Ru and Zn co-doped Co 3 O 4 showed an ultralow overpotential of 172 mV at 10 mA cm −2 and a long-term stability reaching to 100 hours at 10 mA cm −2 for alkaline OER. The experimental results and theoretical simulations demonstrated that the lattice oxygen site jointly connected with the octahedral Ru and tetrahedral Zn atoms became more active than other oxygen sites near Ru atom, which further lowered the reaction energy barriers and avoided generating excessive oxygen vacancies to enhance the structural stability of Ru sites. The findings hope to provide a new perspective to improve the catalytic activity of Ru-incorporated OER catalysts and the stability of lattice-oxygen-mediated mechanism.

关键词： Selective activation Coordination engineering Spinel Co3O4 Co-doped Activity and stability

来源：评论

学校读者我要写书评

暂无评论

Pressure-Induced Superconductivity in Topological Heterostructure (PbSe)5(Bi2Se3)6

arXiv

引用

arXiv 2023年

作者： Pei, Cuiying Zhu, Peng Li, Bingtan Zhao, Yi Gao, Lingling Li, Changhua Zhu, Shihao Zhang, Qinghua Ying, Tianping Gu, Lin Gao, Bo Gou, Huiyang Yao, Yansun Sun, Jian Liu, Hanyu Chen, Yulin Wang, Zhiwei Yao, Yugui Qi, Yanpeng School of Physical Science and Technology ShanghaiTech University Shanghai201210 China School of Physics Beijing Institute of Technology Beijing100081 China Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems Beijing Institute of Technology Beijing100081 China Material Science Center Yangtze Delta Region Academy of Beijing Institute of Technology Jiaxing314011 China State Key Laboratory of Superhard Materials International Center for Computational Method and Software College of Physics Jilin University Changchun130012 China International Center of Future Science Jilin University Changchun130012 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing100190 China Center for High Pressure Science and Technology Advanced Research Beijing100094 China Department of Physics and Engineering Physics University of Saskatchewan SaskatoonSKS7N 5E2 Canada National Laboratory of Solid State Microstructures School of Physics Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China ShanghaiTech Laboratory for Topological Physics ShanghaiTech University Shanghai201210 China Department of Physics Clarendon Laboratory University of Oxford Parks Road OxfordOX1 3PU United Kingdom Shanghai Key Laboratory of High-Resolution Electron Microscopy ShanghaiTech University Shanghai201210 China

Recently, the natural heterostructure of (PbSe)5(Bi2Se3)6 has been theoretically predicted and experimentally confirmed as a topological insulator. In this work, we induce superconductivity in (PbSe)5(Bi2Se3)6 by implementing high pressure. As increasing pressure up to 10 GPa, superconductivity with Tc ~ 4.6 K suddenly appears, followed by an abrupt decrease. Remarkably, upon further compression above 30 GPa, a new superconducting state arises, where pressure raises the Tc to an unsaturated 6.0 K within the limit of our research. Combining XRD and Raman spectroscopies, we suggest that the emergence of two distinct superconducting states occurs concurrently with the pressure-induced structural transition in this topological heterostructure (PbSe)5(Bi2Se3)6. © 2023, CC BY-NC-ND.

关键词： Topology

来源：评论

学校读者我要写书评

暂无评论

Correction: Layer-structured FeCo bihydroxide as an ultra-stable bifunctional electrocatalyst for water splitting at high current densities

引用

Sustainable Energy & Fuels 2021年第12期5卷 3247-3247页

作者： Chaoyang Sun Hui Wang Shan Ji Xuyun Wang Vladimir Linkov Xinlong Tian Long Yao Jiarui Zhao Rongfang Wang State Key Laboratory Base for Eco-Chemical Engineering College of Chemical Engineering Qingdao University of Science and Technology Qingdao China College of Biological Chemical Science and Engineering Jiaxing University Jiaxing China South African Institute for Advanced Materials Chemistry University of the Western Cape Cape Town South Africa State Key Laboratory of Marine Resource Utilization in South China Sea Hainan Provincial Key Lab of Fine Chemistry School of Chemical Engineering and Technology Hainan University Haikou China

Correction for ‘Layer-structured FeCo bihydroxide as an ultra-stable bifunctional electrocatalyst for water splitting at high current densities’ by Chaoyang Sun et al., Sustainable Energy Fuels, 2021, DOI: 10.1039/d...

Correction for ‘Layer-structured FeCo bihydroxide as an ultra-stable bifunctional electrocatalyst for water splitting at high current densities’ by Chaoyang Sun et al., Sustainable Energy Fuels, 2021, DOI: 10.1039/d1se00380a.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Residual stress relaxation of cubic boron nitride thin films deposited in Ar with other noble gases

引用

IOP Conference Series: Materials Science and engineering 2011年第1期20卷

作者： T Ohori J Shirahata T Suzuki T Nakayama H Suematsu S W Lee Z Fu K Niihara Extreme Energy-Density Research Institute Nagaoka University of Technology Niigata 940-2188 Japan Department of Environmental Engineering Sun Moon University Chungnam 336-708 Korea State Key Lab of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China

A novel method based on radio frequency magnetron sputtering tailored to the deposition of low residual stress and adherent c-BN thin films on silicon substrates was developed. In this study, the effect of noble gas (Kr, Ar, Ne and He) added in Ar gas during sputtering on the residual stress and the c-BN content has been investigated. As a result, it was found that the residual stress of c-BN thin film decreased with increasing the helium gas flow rate within argon gas.

关键词：

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：