检索结果-内蒙古大学图书馆

arXiv 2019年

作者： Wang, Hanwen Chen, Mao-Lin Zhu, Mengjian Wang, Yaning Dong, Baojuan Sun, Xingdan Zhang, Xiaorong Cao, Shimin Li, Xiaoxi Huang, Jianqi Zhang, Lei Liu, Weilai Sun, Dongming Ye, Yu Yang, Teng Guo, Huaihong Qin, Chengbing Xiao, Liantuan Zhang, Jing Chen, Jianhao Han, Zheng Vitto Zhang, Zhidong Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang110016 China School of Material Science and Engineering University of Science and Technology of China Anhui230026 China College of Advanced Interdisciplinary Studies National University of Defense Technology Changsha410073 China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser Spectroscopy Shanxi University Taiyuan030006 China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-Electronics Shanxi University Taiyuan030006 China Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan030006 China International Center for Quantum Materials School of Physics Peking University Beijing100871 China State Key Lab for Mesoscopic Physics School of Physics Peking University Beijing China Collaborative Innovation Center of Quantum Matter Beijing100871 China College of Sciences Liaoning Shihua University Fushun113001 China

In crystals, the duplication of atoms often follows different periodicity along different directions. It thus gives rise to the so called anisotropy, which is usually even more pronounced in two dimensional (2D) materials due to the absence of z dimension. Indeed, in the emerging 2D materials, electrical anisotropy has been one of the focuses in recent experimental efforts.[1-8] However, key understandings of the in-plane anisotropic resistance in low-symmetry 2D materials, as well as demonstrations of model devices taking advantage of it, have proven difficult. Here, we show that, in few-layered semiconducting GaTe, electrical conductivity along x and y directions of the 2D crystal can be gate tuned from a ratio of less than one order to as large as 103. This effect is further demonstrated to yield an anisotropic memory resistor behaviour in ultra-thin GaTe, when equipped with an architecture of van der Waals floating gate. Our findings of gate tunable giant anisotropic resistance (GAR) effect pave the way for potential applications in nano-electronics such as multifunctional directional memories in the 2D limit. Copyright © 2019, The Authors. All rights reserved.

关键词： Anisotropy

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Boundary-induced topological chiral extended states in Weyl metamaterial waveguides

arXiv

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arXiv 2024年

作者： Han, Ning Chen, Fujia Li, Mingzhu Zhao, Rui Li, Wenhao Chen, Qiaolu Zhang, Li Pan, Yuang Ma, Jingwen Yu, Zhi-Ming Chen, Hongsheng Yang, Yihao Interdisciplinary Center for Quantum Information State Key Laboratory of Extreme Photonics and Instrumentation ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou310027 China International Joint Innovation Center The Electromagnetics Academy Zhejiang University Zhejiang University Haining314400 China Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang Jinhua Institute of Zhejiang University Zhejiang University Jinhua321099 China Shaoxing Institute of Zhejiang University Zhejiang University Shaoxing312000 China School of Information and Electrical Engineering Hangzhou City University Hangzhou310015 China Department of Electronic Engineering The Chinese University of Hong Kong Shatin New Territories Hong Kong School of Physics Beijing Institute of Technology Beijing100081 China Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems School of Physics Beijing Institute of Technology Beijing100081 China

In topological physics, it is commonly understood that the existence of the boundary states of a topological system is inherently dictated by its bulk. A classic example is that the surface Fermi-arc states of a Weyl system are determined by the chiral charges of Weyl points within the bulk. Contrasting with this established perspective, here, we theoretically and experimentally discover a family of topological chiral bulk states extending over photonic Weyl metamaterial waveguides, solely induced by the waveguide boundaries, independently of the waveguide width. Notably, these bulk states showcase discrete momenta and function as "wormhole" tunnels that connect Fermi-arc surface states living in different two-dimensional (2D) spaces via a third dimension. Our work offers a magnetic-field-free mechanism for robust chiral bulk transport of waves and highlights the boundaries as a new degree of freedom to regulate bulk Weyl quasiparticles. Copyright © 2024, The Authors. All rights reserved.

关键词： Metamaterials

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Manipulation of valley-polarized topological kink states in ultrathin substrate-integrated photonic circuitry

arXiv

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arXiv 2018年

作者： Zhang, Li Yang, Yihao He, Mengjia Wang, Hai-Xiao Yang, Zhaoju Li, Erping Gao, Fei Zhang, Baile Singh, Ranjan Jiang, Jian-Hua Chen, Hongsheng State Key Laboratory of Modern Optical Instrumentation Electromagnetics Academy at Zhejiang University Zhejiang University Hangzhou310027 China Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science and Electronic Engineering Zhejiang University Hangzhou310027 China Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore637371 Singapore Centre for Disruptive Photonic Technologies Photonics Institute Nanyang Technological University 50 Nanyang Avenue Singapore639798 Singapore Shool of Physical Science and Technology Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou215006 China

Valley degrees of freedom, providing a novel way to increase the capacity and efficiency of information storage and processing, has become an important instrument for photonics. However, at present stage, valley photonics is restricted to unprotected valley transport and valley Hall effects at zigzag interfaces, limiting its development and applications. Here, we demonstrate realization, engineering, and manipulation of valley-polarized topological kink states at generic interfaces in ultrathin substrate-integrated photonic circuitry experimentally. The robustness of the valley-polarized topological kink states at generic interfaces is verified by the robust in-gap transmission though sharply bending interface channels and disordered domain wall channels, respectively. With the ultrathin substrate-integrated photonic architecture, we realize geometry-dependent topological channel intersections. This platform has ultrathin thicknesses and excellent self-consistent electrical shielding, which is perfectly compatible with the conventional substrate-integrated photonic circuits. Our study thus provides a novel pathway for controlling valley degrees of freedom in photonics and may work as a novel integration platform for information processing that has disorder-insensitivity, easy access, and lightweight. Copyright © 2018, The Authors. All rights reserved.

关键词： Substrates

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25.71 %-Efficiency FACsPbI3Perovskite Solar Cells Enabled by A Thiourea-based Isomer

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Angewandte Chemie 2024年第49期136卷

作者： Yong Li Prof. Yuwei Duan Prof. Jiangshan Feng Yiqiao Sun Ke Wang Dr. Hongxiang Li Prof. Huaxin Wang Prof. Zhigang Zang Hui Zhou Dongfang Xu Meizi Wu Yongzhe Li Zhuang Xie Zexia Liu Jingyu Huang Dr. Yao Yao Prof. Qiang Peng Prof. Qunping Fan Prof. Ningyi Yuan Prof. Jianning Ding Prof. Shengzhong Liu Prof. Zhike Liu Key Laboratory of Applied Surface and Colloid Chemistry Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 China College of Materials and Chemistry & Chemical Engineering Chengdu University of Technology Chengdu 610059 China Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education) Chongqing University Chongqing 400044 China. College of Polymer Science and Engineering State Key Laboratory of Polymer Materials Engineering Sichuan University Chengdu 610065 China State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an 710049 China. School of Materials Science and Engineering Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology Changzhou University Changzhou 213164 China

Various isomers have been developed to regulate the morphology and reduce defects in state-of-the-art perovskite solar cells (PSCs). To insight the structure-function-effect correlations for the isomerization of thiourea derivatives on the performance of the PSCs, we developed two thiourea derivatives [(3,5-dichlorophenyl)amino]thiourea (AT) and N-(3,5-dichlorophenyl)hydrazinecarbothioamide (HB). Supported by experimental and calculated results, it was found that AT can bind with undercoordinated Pb 2+ defect through synergistic interaction between N1 and C=S group with a defect formation energy of 1.818 eV, which is much higher than that from the synergistic interaction between two −NH− groups in HB and perovskite (1.015 eV). Moreover, the stronger interaction between AT and Pb 2+ regulates the crystallization process of perovskite film to obtain a high-quality perovskite film with high crystallinity, large grain size, and low defect density. Consequently, the AT-treated FACsPbI 3 device engenders an efficiency of 25.71 % (certified as 24.66 %), which is greatly higher than control (23.74 %) and HB-treated FACsPbI 3 devices (25.05 %). The resultant device exhibits a remarkable stability for maintaining 91.0 % and 95.2 % of its initial efficiency after aging 2000 h in air condition or tracking at maximum power point for 1000 h, respectively.

关键词： perovskite solar cells crystallization process isomer thiourea derivatives high efficiency

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MIPI 2022 Challenge on Under-Display Camera Image Restoration: Methods and Results

arXiv

引用

arXiv 2022年

作者： Zhu, Yurui Wang, Xi Fu, Xueyang Hu, Xiaowei Hu, Jinfan Liu, Xina Chen, Xiangyu Dong, Chao Zhang, Dafeng Huang, Feiyu Liu, Shizhuo Wang, Xiaobing Jin, Zhezhu Jiang, Xuhao Shao, Guangqi Wang, Xiaotao Lei, Lei Zhang, Zhao Zhao, Suiyi Zheng, Huan Gao, Yangcheng Wei, Yanyan Ren, Jiahuan Huang, Tao Fang, Zhenxuan Huang, Mengluan Xu, Junwei Zhang, Yong Yang, Yuechi Shu, Qidi Yang, Zhiwen Li, Shaocong Yao, Mingde Xu, Ruikang Guan, Yuanshen Huang, Jie Xiong, Zhiwei Zhu, Hangyan Liu, Ming Liu, Shaohui Zuo, Wangmeng Jia, Zhuang Song, Binbin Song, Ziqi Mao, Guiting Hou, Ben Liu, Zhimou Ke, Yi Ouyang, Dengpei Han, Dekui Zhang, Jinghao Zhu, Qi Zheng, Naishan Zhao, Feng Jin, Wu Conde, Marcos Nathan, Sabari Timofte, Radu Xu, Tianyi Xu, Jun Hrishikesh, P.S. Puthussery, Densen Jiji, C.V. Biao, Jiang Yuhan, Ding Zhang, Li Wan Xiaoyue, Feng Sijing, Chen Tianheng, Zhong Lu, Jiyang Chen, Hongming Fan, Zhentao Chen, Xiang University of Science and Technology of China China Shanghai Ai Laboratory China Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences China University of Macau China Samsung Research China Beijing China Xiaomi Beijing China Hefei University of Technology China School of Artificial Intelligence Xidian University China School of Remote Sensing and Information Engineering Wuhan University China State Key Laboratory of Information Engineering in Surveying Mapping and Remote Sensing Wuhan University China Harbin Institute of Technology China Changsha Research Institute of Mining and Metallurgy China Tianjin University China University of Wurzburg Computer Vision Lab Germany Couger Inc. Japan School of Statistics and Data Science Nankai University China Founding Minds Software India Department of Electronics and Communication Srm University Fudan University China Shenyang Aerospace University China Nanjing University of Science and Technology China

Developing and integrating advanced image sensors with novel algorithms in camera systems are prevalent with the increasing demand for computational photography and imaging on mobile platforms. However, the lack of high-quality data for research and the rare opportunity for in-depth exchange of views from industry and academia constrain the development of mobile intelligent photography and imaging (MIPI). To bridge the gap, we introduce the first MIPI challenge including five tracks focusing on novel image sensors and imaging algorithms. In this paper, we summarize and review the Under-Display Camera (UDC) Image Restoration track on MIPI 2022. In total, 167 participants were successfully registered, and 19 teams submitted results in the final testing phase. The developed solutions in this challenge achieved state-of-the-art performance on Under-Display Camera Image Restoration. A detailed description of all models developed in this challenge is provided in this paper. More details of this challenge and the link to the dataset can be found at https://***/mipi-challenge/MIPI2022. Copyright © 2022, The Authors. All rights reserved.

关键词： Image reconstruction

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Diffusive topological transport in spatiotemporal thermal lattices

arXiv

引用

arXiv 2021年

作者： Xu, Guoqiang Yang, Yihao Zhou, Xue Chen, Hongsheng Alù, Andrea Qiu, Cheng-Wei Department of Electrical and Computer Engineering National University of Singapore Kent Ridge117583 Singapore Interdisciplinary Center for Quantum Information State Key Laboratory of Modern Optical Instrumentation ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou China School of Computer Science and Information Engineering Chongqing Technology and Business University Chongqing400067 China ZJU-Hangzhou Global Science and Technology Innovation Center Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang Zhejiang University Hangzhou310027 China International Joint Innovation Center ZJU-UIUC Institute The Electromagnetics Academy at Zhejiang University Zhejiang University Haining314400 China Photonics Initiative Advanced Science Research Center City University of New York New YorkNY10031 United States Physics Program Graduate Center of the City University of New York New YorkNY10016 United States

Topological insulating phases are usually found in periodic lattices stemming from collective resonant effects, and it may thus be expected that similar features may be prohibited in thermal diffusion, given its purely dissipative and largely incoherent nature. We report the diffusion-based topological states supported by spatiotemporally-modulated advections stacked over a fluidic surface, thereby imitating a periodic propagating potential in effective thermal lattices. We observe edge and bulk states within purely nontrivial and trivial lattices, respectively. At interfaces between these two types of lattices, the diffusive system exhibits interface states, manifesting inhomogeneous thermal properties on the fluidic surface. Our findings establish a framework for topological diffusion and thermal edge/bulk states, and it may empower a distinct mechanism for flexible manipulation of robust heat and mass transfer. © 2021, CC BY.

关键词： Interface states

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Preparation and Oxidation of ZrB2/SiC/Zr2Al4C5 Multi-phase Ceramics with Spark Plasma Sintering

引用

Journal of Physics: Conference Series 2013年第1期419卷

作者： Qilong Guo Junguo Li Zhiyu Ma Ye Nie Qiang Shen Lianmeng Zhang State Key Lab of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 People's Republic of China Sinoma International Engineering CO. Ltd.(Nanjing) 106 Jiangjun avenue Nanjing Jiangsu 211100 China

The ZrB2/SiC/Zr2Al4C5 multi-phase ceramics were fabricated by spark plasma sintering (SPS) at 1800 °C for 3 min under 20 MPa in an vacuum. Oxidation behavior of multi-phase ceramics were investigated using thermo gravimetric analysis (TGA) from 20 °C to 1500 °C and muffle furnace in stagnant air at 1200 °C. Samples were analyzed after oxidation by X-ray diffraction (XRD), scanning electron microscopy (SEM) along with energy dispersive spectroscopy (EDS) to determine the reaction products and to observe the microstructure. The results showed that the aluminium borate and mullite crystallize on the surface in the samples oxidized. The effect of Zr2Al4C5 content on the oxidation resistance of the ZrB2 ceramics were discussed respectively, and oxidation mechanism was also analysised.

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Anomalous Nernst effect induced terahertz emission in a single ferromagnetic film

arXiv

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arXiv 2023年

作者： Feng, Zheng Tan, Wei Jin, Zuanming Chen, Yi-Jia Zhong, Zhangfeng Zhang, Liang Sun, Song Tang, Jin Jiang, Yexing Wu, Po-Hsun Cheng, Jun Miao, Bingfeng Ding, Haifeng Wang, Dacheng Zhu, Yiming Guo, Liang Shin, Sunmi Ma, Guohong Hou, Dazhi Huang, Ssu-Yen Microsystem & Terahertz Research Center CAEP Chengdu610200 China Terahertz Technology Innovation Research Institute Terahertz Spectrum and Imaging Technology Cooperative Innovation Center Shanghai Key Lab of Modern Optical System University of Shanghai for Science and Technology Shanghai200093 China Department of Physics National Taiwan University Taipei10617 Taiwan National Laboratory of Solid State Microstructures Department of Physics Nanjing University Nanjing210093 China Department of Mechanical and Energy Engineering Southern University of Science and Technology Shenzhen518055 China School of Physics and Optoelectronics Engineering Science Anhui University Hefei230601 China Department of Mechanical Engineering National University of Singapore 117516 Singapore Department of Physics Shanghai University Shanghai200444 China ICQD Hefei National Laboratory for Physical Sciences at Microscale University of Science and Technology of China Hefei230026 China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China Department of Physics University of Science and Technology of China Hefei230026 China

By developing a bidirectional-pump terahertz (THz) emission spectroscopy, we reveal an anomalous Nernst effect (ANE) induced THz emission in a single ferromagnetic film. Based on the distinctive symmetry of the THz signals, ANE is unequivocally distinguished from the previously attributed ultrafast demagnetization and anomalous Hall effect mechanisms. A quantitative method is established to separate the different contributions, demonstrating a significant ANE contribution that even overwhelms other competing mechanisms. Our work not only clarifies the origin of the ferromagnetic-based THz emission, but also offers a fertile platform for investigating the ultrafast magnetism and THz spintronics. © 2023, CC BY-NC-SA.

关键词： Emission spectroscopy

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Superconductivity and Charge-density-wave-like Transition in Th2Cu4As5

arXiv

引用

arXiv 2023年

作者： Duan, Qing-Chen Liu, Shao-Hua Li, Bai-Zhuo Meng, Jiao-Jiao Yang, Wu-Zhang Liu, Yi Lin, Yi-Qiang Wu, Si-Qi Lu, Jia-Yi Bao, Jin-Ke Xiao, Yu-Sen Zhao, Xin-Yu Mei, Yu-Xue Sun, Yu-Ping Yu, Dan Tan, Shu-Gang Jing, Qiang Zhong, Rui-Dan Chen, Yong-Liang Zhao, Yong Ren, Zhi Wang, Cao Cao, Guang-Han School of Physics and Optoelectronic Engineering Shandong University of Technology Zibo255000 China School of Physics Interdisciplinary Center for Quantum Information State Key Lab of Silicon Materials Zhejiang University Hangzhou310058 China School of Science Westlake University Hangzhou310064 China Department of Applied Physics Key Laboratory of Quantum Precision Measurement of Zhejiang Province Zhejiang University of Technology Hangzhou310023 China School of Physics Hangzhou Key Laboratory of Quantum Matters Hangzhou Normal University Hangzhou311121 China Tsung-Dao Lee Institute School of Physics and Astronomy Shanghai Jiao Tong University Shanghai200240 China Collaborative Innovation Centre of Advanced Microstructures Nanjing University Nanjing210093 China School of Physical Science and Technology Southwest Jiaotong University Chengdu610031 China College of Physics and Energy Fujian Normal University Fuzhou350117 China

We report the synthesis, crystal structure, and physical properties of a novel ternary compound, Th2Cu4As5. The material crystallizes in a tetragonal structure with lattice parameters a = 4.0716(1) Å and c = 24.8131(4) Å. Its structure can be described as an alternating stacking of fluorite-type Th2As2 layers with antifluorite-type double-layered Cu4As3 slabs. The measurement of electrical resistivity, magnetic susceptibility and specific heat reveals that Th2Cu4As5 undergoes bulk superconducting transition at 4.2 K. Moreover, all these physical quantities exhibit anomalies at 48 K, where the Hall coefficient change the sign. These findings suggest a charge-density-wave-like (CDW) transition, making Th2Cu4As5 a rare example for studying the interplay between CDW and superconductivity. © 2023, CC BY-NC-ND.

关键词： Copper compounds

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Observation of Structural & Chemical Configuration, Lattice Distortion, Defect Dynamics and Phase Evolution in High-Entropy Transition Metal Carbides (HE-MAX)

引用

Microscopy and Microanalysis 2024年第SUPPLEMENT_1期30卷

作者： Zhu, Xiangyu Wu, Zijiao Wang, Qingxiao Wu, Yuan Liu, Xiongjun Wang, Hui Jiang, Suihe Lu, Zhaoping Kim, Moon J Department of Materials Science and Engineering The University of Texas at Dallas Richardson Texas USA Beijing Advanced Innovation Center for Materials Genome Engineering State Key Laboratory for Advanced Metals and Materials University of Science and Technology Beijing Beijing People’s Republic of China Imaging and Characterization Core Lab King Abdullah University of Science and Technology Thuwal Saudi Arabia

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