B4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity...
B4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity and Seebeck coefficient of the samples are measured from room temperature up to 1500K. The electrical conductivity increases with temperature, and more rapidly after 1300K; the Seebeck coefficient of the ceramics also increases with temperature and rises to a value of about 320μVK−1. The value of the figure of merit of Si-doped B4C rises to about 4 × 10−4 K−1 at 1500K.
WO3-based varistors doped with Y2O3 were prepared and the microstructure, nonlinear electrical properties, and dielectric properties were investigated. Breakdown voltages Eb of WO 3 doped with Y2O3 are lower than that...
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The operation characteristics of proton exchange membrane fuel cells with the channel width of 1mm and 2 mm under a medium-pressure are addressed, and the effect of temperature on the operation characteristic is inves...
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The operation characteristics of proton exchange membrane fuel cells with the channel width of 1mm and 2 mm under a medium-pressure are addressed, and the effect of temperature on the operation characteristic is investigated in detail. The results show that fuel cell with a 2 mm channel width can realize the long time operation in a closed-ended situation. The voltage of the 1mm width cell can drop from 0.7 V to 0.5 V in 3 min, while the 2 mm width cell can last for more than 53 min. Moreover, the temperature has a significant effect on the performance, the voltage of the 1 mm width cell can drop from 0.69 V to 0.5 V in less than 1.7 min. The resistance of the cell is increasing with the temperature, but the amplitude is smaller in high temperature.
In present study LiMn2O4-xFx were prepared by the sol-gel method. X-ray diffraction (XRD) and scanning electron microscope (SEM ) were employed to detect the microstructure of the reaction products. It were found perf...
In present study LiMn2O4-xFx were prepared by the sol-gel method. X-ray diffraction (XRD) and scanning electron microscope (SEM ) were employed to detect the microstructure of the reaction products. It were found perfect crystal particles were obtained, and its' size were uniform in 1∼2 μ m. The specific capacity and cycleability were measured basing on battery program control test system. The results shown the substitution of F for O increased the specific capacity of the material at the cost of the cycleability due to more Mn3+ and less Mn4+ existed in the material. The exist of Mn3+ would reduce cycleability of cathode material due to the Jahn-Teller effect which were caused by the deformation of the crystal structure.
In the present work, silicon nitride nanowires (SNNWs) have been synthesized via nitriding cryomilled nanocrystalline silicon powder. The silicon powder exhibits a fine polycrystalline structure after the cryomilling ...
In the present work, silicon nitride nanowires (SNNWs) have been synthesized via nitriding cryomilled nanocrystalline silicon powder. The silicon powder exhibits a fine polycrystalline structure after the cryomilling process, with an average grain size of 25 to 125 nm at various cryomilling times. The SNNWs that form after the nitridation of the cryomilled silicon powder exhibit single crystal structure and are 20 to 100 nm in diameter and ∼10 µm in length. The diameter of the nanowires is in agreement with the grain size of the cryomilled Si powder. Microstructural characterization reveals that the as-synthesized nanowires have a hexagonal structure and their primary growth direction is along the [0001] direction. The formation of the Si–N–Si bond during the cryomilling process, as investigated theoretically with density functional theory, promotes the subsequent synthesis of the α-Si3N4 nanowires. The mechanism for nanowire formation appears to be a vapor-solid (VS) reaction.
In the present study electronic structures of the interface between SBT and transition metal including Au, Ag, Cu, Ni, Pt were studied by employing DV-Xα method. The calculations were performed on cluster models of t...
In the present study electronic structures of the interface between SBT and transition metal including Au, Ag, Cu, Ni, Pt were studied by employing DV-Xα method. The calculations were performed on cluster models of the interface which were SrTa8O36-M2 (M=Au, Ag, Cu, Ni, Pt, and Bi). The calculations results including Fermi level, bond order, atomic charge distribution shown that there existed significant hybridization between metal d states and the O2p–Ta3d states. The Fermi levels of the metals located in the gap of SBT and metal-induced states, and the position of the Fermi levels did not change greatly due to the different transition metals. The charge of Sr and the transition metal atom transferred to oxygen atom, so that the bonding between Sr (or metal atom) and O was almost ionic bonding. The interactions between transition metal and SBT mainly came from the Coulomb interaction.
Silver nanoparticles were prepared by pulsed wire discharge (PWD) using silver wire in deionized water at various relative energy (K) from 10 to 98, which is ratio of the charged energy of the capacitor in the electri...
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Silver nanoparticles were prepared by pulsed wire discharge (PWD) using silver wire in deionized water at various relative energy (K) from 10 to 98, which is ratio of the charged energy of the capacitor in the electrical circuit to the vaporization energy of the wire. From energy deposition calculated by the measured voltage and current waveforms, deposited energy of the wire was increased with increasing K. From X-ray diffraction (XRD) analysis, prepared nanoparticles were phase identified as silver. From transmission electron microscopy observations, the shape of prepared silver nanoparticles were spherical and the median particle diameter (D50) and the geometric standard deviation (σg) were calculated from the particle distribution. D50 was decreased from 34 to 19 nm with increasing K. The particle size in prepared by PWD in liquid media can be controlled by K.
Recently, indoor positioning technology based on received signal strength in wireless networks are becoming more and more attractive. In this paper, we firstly introduced the experimental testbed in a typical office b...
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Recently, indoor positioning technology based on received signal strength in wireless networks are becoming more and more attractive. In this paper, we firstly introduced the experimental testbed in a typical office building. Then, we proposed the mechanism to improve the positioning accuracy by using five different filtering methods because of harsh multi-path environment and all kinds of disturbance in indoor areas. Thirdly, the experimental parameters of five filtering methods, called Limit Filter, Threshold Filter, Max Filter, MA Filter and Kalman Filter, were optimized and analyzed. Finally, we summarized the five filtering methods, and compared the performance of Limit Filter, Threshold Filter and Max Filter in detail. Experimental results demonstrated that the proposed Limit Filter andThreshold Filter can increase the accuracy in 3 meters of 91% to 98%.
A novel method based on radio frequency magnetron sputtering tailored to the deposition of low residual stress and adherent c-BN thin films on silicon substrates was developed. In this study, the effect of noble gas (...
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A novel method based on radio frequency magnetron sputtering tailored to the deposition of low residual stress and adherent c-BN thin films on silicon substrates was developed. In this study, the effect of noble gas (Kr, Ar, Ne and He) added in Ar gas during sputtering on the residual stress and the c-BN content has been investigated. As a result, it was found that the residual stress of c-BN thin film decreased with increasing the helium gas flow rate within argon gas.
The CaF_(2)-4LiF additive was added into SrTiO_(3)ceramics in order to decrease the sintering temperature for compact pulse power *** crystalline structure,microstructure and energy storage performance of sintered cer...
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The CaF_(2)-4LiF additive was added into SrTiO_(3)ceramics in order to decrease the sintering temperature for compact pulse power *** crystalline structure,microstructure and energy storage performance of sintered ceramics were *** CaF_(2)-4LiF additive to SrTiO_(3)ceramics contributes to a notably enhancement of the energy storage *** great enhancement in energy storage density occurred due to the notable increase in breakdown strength and the refinement of *** 2 at%additive,the samples exhibited an average breakdown strength of 31.8kV/mm,and an energy storage density of 1.212 J/cm^(3)which is about 1.4 times higher than pure SrTiO_(3).
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