In order to fabricate AZO/SiO2/p-Si heterojunction device and let it be an absorber of ultraviolet response cell. Zinc oxide (ZnO) thin films doped with aluminum (AZO) were deposited on p-Si(100) substrates covered wi...
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In order to fabricate AZO/SiO2/p-Si heterojunction device and let it be an absorber of ultraviolet response cell. Zinc oxide (ZnO) thin films doped with aluminum (AZO) were deposited on p-Si(100) substrates covered with silicon dioxide (SiO2) by radio frequency magnetron sputtering. The optical and electrical properties of the Al doped - ZnO films were characterized by UV-VIS spectrophotometer, current-voltage measurement, and four point probe technique, respectively. The results show that the device is a typical tunneling diode for minority carrier and a strong obstructing effect from majority carriers. The potential rectifying behavior and photovoltaic characteristic is present at dark current and weak light illumination, respectively.
Bi25FeO40 powders have successfully been synthesized by simple hydrothermal method. The effect of the concentration of mineralizer and stoichiometry on the prepared samples was investigated. With the UV-Vis spectra, B...
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Bi25FeO40 powders have successfully been synthesized by simple hydrothermal method. The effect of the concentration of mineralizer and stoichiometry on the prepared samples was investigated. With the UV-Vis spectra, Bi25FeO40 powders have a broad absorption band in the range of 400-600 nm and a good visible-light-response ability. Photo-catalytic activity of Bi25FeO40 powders was evaluated by the degradation of methyl violet solution under UV-Vis light irradiation, which is found that Bi25FeO40 is efficient for photo-degradation of the methyl violet due to its own crystal structure.
CCa(Mg1/3Nb2/3)O3/CaTiO3 (CMN/CT)heterostructure dielectric thin films, with the same thickness but different arrangement patterns, were prepared by Pechini method. The effects of the heterogeneous interface on the st...
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CCa(Mg1/3Nb2/3)O3/CaTiO3 (CMN/CT)heterostructure dielectric thin films, with the same thickness but different arrangement patterns, were prepared by Pechini method. The effects of the heterogeneous interface on the structure and properties have been studied. The results showed that, in nonalternating arrangement films, single perovskite phase can only be obtained in TM heterostructure film, in which CaTiO3 layer has grown on the substrate firstly, and the dielectric properties of this film is εr=47.5, tanδ=0.020 at 1MHz. Comparing with non-alternating arrangement film, all alternating arrangement films have single perovskite phase, and the existing of heterogeneous interface enhanced the dielectric properties of TMM and MMT alternating arrangement films by introducing space charges. And the dismatch between CMN and CT layers can avoid the harmful particle forming, improve crystallization and surface morphology, and keep the dielectric loss at a low level. At 1MHz, the dielectric constant (εr) of TMM and MMT films are 66.3 and 63.6, while both dielectric loss (tanδ) are 0.021.
A novel ITO/SiO 2 /np Silicon SINP violet and blue enhanced photovoltaic device has been fabricated by thermal diffusion of phosphorus for shallow junction to enhance the spectral responsivity within the wavelength ra...
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A novel ITO/SiO 2 /np Silicon SINP violet and blue enhanced photovoltaic device has been fabricated by thermal diffusion of phosphorus for shallow junction to enhance the spectral responsivity within the wavelength range of 400-600 nm, low temperature thermally grown an ultrathin silicon dioxide and RF sputtering ITO antireflection coating to reduce the reflected light and enhance the sensitivity. The current-voltage (I-V) characteristics, spectral response and responsivity of high quantum efficiency of violet SINP photovoltaic device and deep junction SIcircldquoNP photovoltaic device were calculated and analyzed in detail.
ITO/AZO double films were deposited by RF sputtering on p-Si(lOO) substrate to fabricate ITO/AZO/SiCVp-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by...
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ITO/AZO double films were deposited by RF sputtering on p-Si(lOO) substrate to fabricate ITO/AZO/SiCVp-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect.
In present work, undoped and Co 2 O 3 -doped Ba 4 Eu 2 Fe 2 Nb 8 O 30 ceramics were fabricated by routine solid state method. Wide temperature range measurement shows two kinds of dielectric peaks. The low-temperatur...
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In present work, undoped and Co 2 O 3 -doped Ba 4 Eu 2 Fe 2 Nb 8 O 30 ceramics were fabricated by routine solid state method. Wide temperature range measurement shows two kinds of dielectric peaks. The low-temperature peak attributes to ferroelectric-paraelectric phase transition. The high-temperature peak is affected greatly by Co 2 O 3 additives. With increasing the content of Co 2 O 3 dopant the second peak vanished, indicating that it is related to space charge.
Polycrystalline sample of Ba4Gd2Fe2Nb8O30 ceramics were prepared by a high temperature solid-state reaction technique. The structure and dielectric properties as well as the behavior of ferroelectric phase transition ...
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Polycrystalline sample of Ba4Gd2Fe2Nb8O30 ceramics were prepared by a high temperature solid-state reaction technique. The structure and dielectric properties as well as the behavior of ferroelectric phase transition have been investigated. The dielectric spectra are characterized in wide frequency (40Hz-1MHz) and temperature (25℃-600℃). At 1MHz, the room temperature dielectric constant of Ba4Gd2Fe2Nb8O30 ceramic is 160 together with dielectric loss of 0.054. Two dielectric abnormalities were detected at the temperature dependence of dielectric spectra in low and high temperature ranges, respectively. The low temperature peak (145℃) is frequency independence, while the higher temperature (300℃-600℃) one is extremely high relaxorlike, with very strong frequency dispersion. The high temperature peak was not relaxor ferroelectric but an oxygen defect induced dielectric abnormity, while the low temperature one was proposed to the ferroelectricparaelectric phase transition. The ferroelectric nature of the present materials is confirmed by the P-E hysteresis loop, with 2 Prof 1.5μC/cm2.
The process of use catalyst or functional material that contains iron ion to weaken -O-H-O- hydrogen bond of the thick oil to reduce viscidity or crack, in aspects of the ion charge. covalent bond order, total energy ...
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The process of use catalyst or functional material that contains iron ion to weaken -O-H-O- hydrogen bond of the thick oil to reduce viscidity or crack, in aspects of the ion charge. covalent bond order, total energy and the average distance of Fe-O. is studied with density function theory and discrete variational method （DFT-DVM）, one of the first principle methods. With the decrease of the distance of Fe-O. the charge of Fe ion increases, the charge of hydrogen ion decreases, and hydrogen bond is weakened. There are obvious and more stable effects to use the catalyst that contains multiple metal ions or increase the catalyst amount in weakening hydrogen bond of the thick oil. This theoretic work is helpful to exploit and process the thick oil of petroleum and maybe overcome the crisis of petroleum energy is approaching to us.
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