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9th International Conference on ULtimate Integration of Silicon, ULIS 2008

作者： Qiu, Z.J. Zhang, Z. Olsson, J. Lu, J. Hellström, P.-E. Liu, R. Östling, M. Zhang, S.-L. State Key Lab. of ASIC and System School of Microelectronics Fudan University Shanghai China School of Information and Communication Technology Royal Institute of Technology Stockholm Sweden Angstrom Laboratory Uppsala University Uppsala Sweden

ISBN: (纸本)9781424417308

This works demonstrates a novel approach using Si implantation prior to Pt deposition and PtSi formation to control the underlap length between the PtSi source/drain regions to the gate in Schottky-Barrier (SB-) MOSFETs. Dopant segregation at the PtSi/Si interface is used to enhance device performance. With the Ion/Ioff current ratio as an indicator, optimized Si implant doses are found for both n- and p-channel SB-MOSFETs. Through an effective barrier width, the underlap length has direct implication on the leakage current. © 2008 IEEE.

关键词： Schottky barrier diodes

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GEMI: A high performance and high flexibility memory interface architecture for complex embedded SOC

GEMI: A high performance and high flexibility memory interfa...

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International Conference on Computer Science and Software Engineering, CSSE 2008

作者： Hualong, Zhao Hongshi, Sang Tianxu, Zhang Yebin, Fan State Key Lab. for Multi-spectral Information Processing Technologies Institute for Pattern Recognition and Artificial Intelligence Huazhong University of Science and Technology Wuhan China Department of Computer Science Huazhong University of Science and Technology Wuhan China

ISBN: (纸本)9780769533360

Two of the most significant factors in the success of today's system-on-chip (SoC) designs are the ability to deliver efficient access to off-chip high speed memory and the ability to be compatible with several different interface-timings of several different sorts of memories. And the scheduling scheme of data streams for multi-master and multi-outstanding requests situation in complex SoC should be considered carefully, too. This paper introduces a novel general external memory interface (GEMI) architecture for the high performance and high flexibility memory interface. Several techniques and methods, i.e. data and command buffers based on asynchronous FIFO, optimized bank management, multi-port access scheduler, request reorder unit, are proposed in this paper for fulfilling the requirements mentioned above. Some techniques are specially proposed for data streams scheduling in complex SoC. At the end of the paper, the simulation and tape-out results are provided. The whole implementation of architecture is proven to be not only functional and efficient, but also flexible and reusable by simulation and silicon verification. © 2008 IEEE.

关键词： Scheduling

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High level architecture evolved modular federation object model

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Chinese Journal of systems Engineering and Electronics 2009年第3期000卷

作者： Wang Wenguang Xu Yongping Chen Xin Li Qun Wang Weiping Coll. of Information System and Management National Univ. of Defense Technology Changsha 410073 P. R. China Beijing Key Lab. of Intelligent Telecommunications Software and Multimedia Beijing Univ. of Posts and Telecommunications Beijing 100876 P. R. China State Key Lab. for Complex Systems Simulation Beijing 100101 P. R. China

To improve the agility, dynamics, composability, reusability, and development efficiency restricted by monolithic federation object model (FOM), a modular FOM is proposed by high level architecture (HLA) evolved product development group. This paper reviews the state-of-the-art of HLA evolved modular FOM. In particular, related concepts, the overall impact on HLA standards, extension principles, and merging processes are discussed. Also permitted and restricted combinations, and merging rules are provided, and the influence on HLA interface specification is given. The comparison between modular FOM and base object model (BOM) is performed to illustrate the importance of their combination. The applications of modular FOM are summarized. Finally, the significance to facilitate compoable simulation both in academia and practice is presented and future directions are pointed out.

关键词： model federation object model review modular federation object model base. object model com-posability high level architecture evolved simulation

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IF filter for GSM and WCDMA

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Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid state Electronics 2008年第1期28卷 114-118+123页

作者： Zhou, Zhujin Li, Ning Su, Yanfeng Ren, Junyan ASIC and System State Key Lab. Fudan University Shanghai 200433 China Sicomm RF Technology Corporation Shanghai 200433 China

Based on SMIC 0.35 μm mixed signal process, a forth-order active-opamp RC low-pass filter used in GSM/WCDMA communication system is presented. The filter meets the bandwidth specifications of the PDC and WCDMA standards especially the high IIP3, and shares the maximum number of components between the two modes. The total area is 1578 μm × 515 μm. The operational amplifiers with adjustable GBW were used to optimize GSM-mode power consumption. The capacitance matrix was used to tune the cutoff frequency with the consideration of the varieties of the temperature and technology. Also, the capacitances were made partially over-laping to reduce the resistance spread. The measured noise figure is 56 dB and 43 dB in the GSM and WCDMA modes, respectively. In the WCDMA mode, the IIP3 is 34 dBm, and the power dissipation is 17.9 mW;While in the GSM mode, the circuit consumes 11.3 mW. The supply volatge is 3.3 V.

关键词： Operational amplifiers

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Novel scheme of draw-out power supply utilized in transmission line state monitoring

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Dianli Xitong Zidonghua/Automation of Electric Power systems 2008年第1期32卷 76-80页

作者： Li, Xianzhi Du, Lin Chen, Weigen Wang, Youyuan Sun, Caixin Li, Jingyan State Key Lab. of Transmission and Distribution Equipment and Power System Safety and New Technology Chongqing University Chongqing 400044 China

A novel scheme of draw-out coils which are utilized in the power supply of the transmission-line state parameters online monitoring system is proposed, aiming at the ubiquity of problems in existing literatures that the draw-out coils are prone to deep saturation and high heat consumption, and thus the circuits are complex. These problems are resolved through introducing an air-gap magnetic resistance to the draw-out coils, as well as properly matching parameters such as the configuration of the coil, the material of the magnetic core, turn numbers and air gap length. Then a power supply equipment is developed based on the draw-out coil aforementioned. Integral test results illustrate that the power supply provides stable outputs with no saturation and low heat consumption throughout the alternating range of conducting currents. Besides, this paper analyzes the influence of abnormal large currents through the conductor on reliability of the power supply. Detailed measures to enhance the reliability are presented thereon. Short circuit and impulse current tests show that the measures proposed are capable of restraining the demolishment from electrodynamic force and overvoltage caused by the abnormal large current.

关键词： Electric lines

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A Low Power SHA-less Pipelined ADC used in DVB-S2

A Low Power SHA-less Pipelined ADC used in DVB-S2

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2008 9th International Conference on Solid-state and Integrated-Circuit technology

作者： Zhang Zhang Xiaoyang Zeng Jian Li Lei Xie Yawei Guo State Key Lab of ASIC & System Fudan University Comlent Technology Inc.

A 8-b 125MS/s pipelined Analog-to-Digital Converter （ADC） used in DVB-S2 is presented in this *** on reviewing low-power design techniques of high speed ADCs,several technologies are used in the design including the SHA-less architecture to reduce the power dissipation *** analysis is given about the relationship between the closed loop bandwidth (BW) and the current of operational amplifier （OPAMP） used in Multiply Digital-to-Analog Converter （MDAC） to get the lowest power dissipation which can satisfy the *** ADC is realized in SMC 0.18um 1P6M CMOS process and according to the simulation results,the SNDR is 48dB with the power of 23.5mW.

关键词： ADC SHA A Low Power SHA-less Pipelined ADC used in DVB-S2 DVB

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Single link tracking scheme based on UWB localization

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Journal of systems Engineering and Electronics 2009年第6期000卷

作者： Xiao Zhu Xiong Hailiang Yu Quan Yi Kechu State Key Lab. of Integrated Service Networks Xidian Univ. Xi'an 710071 P. R. China School of Electronic Science and Engineering National Univ. of Defense Technology Changsha 410073 P. R. China State Key Lab. of Integrated Service Networks Xidian Univ. Xi'an 710071 P. R. China State Key Lab. of Integrated Service Networks Xidian Univ. Xi'an 710071 P. R. China Inst. of China Electronics Equipment System Engineering Corporation Beijing 100039 P. R. China

To investigate the low-complex and high-precise tracking method, a novel single link tracking scheme based on UWB localization is proposed. Two antenna arrays are settled at the fixed station (FS) to receive the UWB signal from mobile terminal (MT), one FS is enough for the proposed scheme to track the MT. The UWB multipath detection algorithm for time difference of arrival (TDOA) estimation is presented and TDOA is thus adopted to estimate angle of arrival (AOA), avoiding the synchronization and complicated beamforming for AOA. The impacts of localization errors, concluding multipath and non-line-of-sight (NLOS) errors are simulated for the proposed track scheme. It is demonstrated that the simulation curve can match the real target moving, and the feasibility of the proposed scheme is proved.

关键词： ultra-wide band localization single-link tracking angle of arrival estimation

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Electrostatically driven microgripper integrated piezoresistive force sensor

Electrostatically driven microgripper integrated piezoresist...

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Design, Test, Integration and Packaging of MEMS/MOEMS

作者： Tao Chen Liguo Chen Lining Sun Xinxin Li State Key Laboratory of Robotics and System Robotics Institute Harbin Institute of Technology Harbin China State Key Lab ofTransducer Technology Shanghai Institute ofMicrosystem and Information Technology Chinese Academy and Sciences Shanghai China

This paper presents the design, fabrication, and application of an electrostatically driven microgripper integrated piezoresistive force sensor. The microgripper is designed to manipulate two microobjects at the same time with force sensing ability. Surface and bulk micromachining technology is employed to fabricate the microgripper from single crystal silicon wafer. The end effector of the gripper is a four arms structure, two fixed cantilever beams integrated with piezoresistive sensor are designed to sensing the gripping force, and an electrostatically driven microactuator is designed to provide the force to operate the other two movable arms. In this way, the four fingers structure enables the gripper to grasp two samples with different sizes at the same time. Experimental results show that it can successfully provide force sensing and play a main role in preventing damage of microparts in micromanipulation and microassembly tasks.

关键词： Grippers Piezoresistance Force sensors Arm Fabrication Micromachining Silicon End effectors Structural beams Microactuators

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A Novel EWOD Digital Microfluidic Device Using P（VDF-TrFE）

A Novel EWOD Digital Microfluidic Device Using P（VDF-TrFE）

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2008 9th International Conference on Solid-state and Integrated-Circuit technology

作者： Pingan Zhao Yinqing Li Jia Zhou Ran Liu Yiping Huang Haifen Xie Haisheng Xu ASIC and System State Key Lab Department of MicroelectronicsFudan University Department of Physics East China University of Science and Technology

＜正＞A novel digital microfluidic device using the high dielectric constant material P（VDF-TrFE）（poly-vinylidene fluoride-trifluoroethylene） as the dielectric layer fabricated by spin-coating process is *** device is featured with the advantages of both low driving voltage and IC compatible *** dielectric constant of P（VDF-TrFE） is measured as high as *** contact angle between the liquid droplet and the device changes from 118°to 75°under an applied voltage of 30V.A droplet of 3μL PBS（phosphate buffered saline） has been successfully driven reciprocatively on the planar surface under an operating voltage of 20V.

关键词： [IEEE keyword]Voltage measurement Materials Dielectric measurements Microfluidics Electrodes Dielectric constant Dielectrics

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Thermal cycling aging effect on the shear strength, microstructure, intermetallic compounds (IMC) and crack initiation and propagation of reflow soldered Sn-3.8Ag-0.7Cu and wave soldered Sn-3.5Ag ceramic chip components

Thermal cycling aging effect on the shear strength, microstr...

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作者： Andersson, Cristina Tegehall, Per-Erik Andersson, Dag R. Wetter, Göran Liu, Johan Department of Microtechnology and Nanoscience Sino-Swedish Microsystem Integration Technology Chalmers University of Technology Gothenburg SE-412 96 Sweden IVF Industrial Research and Development Corporation Mölndal SE-431 53 Sweden Key State Lab for New Displays and System Applications and SMIT Center Shanghai University Shanghai 200072 China

Temperature cycling of electronic components was carried out at two different temperature profiles, the first ranging between -55C and 100C (TC1) and the second between 0C and 100C (TC2). Totally, 7000 cycles were run at TC1 and 14500cycles at TC2. The test board's top-side components were surface mounted using Sn-3.8Ag-0.7Cu solder alloy, and the bottom side surface mount devices (SMD) were wave soldered with Sn-3.5Ag alloy. The solder joint degradation was investigated as a function of cycle number by means of shear force measurements and cross-sectioning. The shear force drop was correlated to both crack initiation time and propagation rate, and microstructural changes. The effect of manufacturing process (reflow versus wave soldering) and component size (0805 versus 0603 components) on the shear force were also investigated. For both reflow and wave soldered components, the harsher the test environment the faster and largest the decrease in shear force. The shear force is higher for the 0805 components compared to the 0603. The effect of component size on the residual shear force is higher for the testing condition TC1. TC1 also seems to have a higher effect on the residual shear force compared to TC2. The main difference between wave soldered and reflow soldered components is that the shear force is in average higher for the wave soldered components compared to the reflow soldered. For the reflow soldered components using SAC, the microstructure coarsens as a function of temperature cycling, especially the Ag3Sn intermetallic particles. Furthermore, this alloy shows an increase in intermetallic compound (IMC) layer thickness (Cu-Ni-Sn), and its growth is controlled by a diffusion mechanism. The IMC growth coefficient is for the SAC system tested at TC1 0.0231 μm/h1/2 (0.00053 μm/h) and for TC2 0.0054 μm/h1/2 (2.9*10-5 μm/h). The microstructural changes during thermal cycling are a result of both static and strain-enhanced aging. For the wave soldered components

关键词： Microstructure

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