Highly conductive IrO2 thin films were prepared on Si (100) substrates by pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. The effect of substrate temperature on the stru...
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Highly conductive IrO2 thin films were prepared on Si (100) substrates by pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. The effect of substrate temperature on the structure and electrical properties of IrO2 films was investigated. The deposited films at substrate temperatures ranging from 250 to 500°C under an oxygen pressure of 20Pa were pure polycrystalline tetragonal IrO 2 and the preferential growth orientation changed with the substrate temperature. IrO2 films were well solidified with the fairly homogeneous thickness and exhibited a good adhesion with the substrate. The room-temperature resistivity of IrO2 films decreased with the increase of substrate temperature and the minimum resistivity of (42±6) μΩ·cm was deposited at 500°C.
Potassium lithium niobate (KLN: K3Li2Nb5O15) films have been deposited on quartz glass by Pulsed laser deposition (PLD) technique using a stoichiometric KLN target as starting materials. By investigating the effects o...
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Potassium lithium niobate (KLN: K3Li2Nb5O15) films have been deposited on quartz glass by Pulsed laser deposition (PLD) technique using a stoichiometric KLN target as starting materials. By investigating the effects of both the oxygen pressure and the substrate temperature on the structure of KLN films, optimum parameters have been identified for the growth of high-quality KLN films. At 10Pa oxygen ambient pressure, tetragonal tungsten-bronze-type structure of KLN films with (310) preferred orientation can be achieved at substrate temperatures in the range of 700-800°C Optical studies indicate that the films are highly transparent in the visible-near-infrared wavelength range.
MoSi2 is one of the few intermetallics to have potential for farther systems. However, the use of MoSi2 has been hindered due to the brittle nature of the material at low temperatures, inadequate creep resistance at h...
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MoSi2 is one of the few intermetallics to have potential for farther systems. However, the use of MoSi2 has been hindered due to the brittle nature of the material at low temperatures, inadequate creep resistance at high temperatures, accelerated (pest) oxidation at temperatures between 450-550°C. In this investigation Mo(Al,Si2)/Ti 3SiC2 composites has been prepared by reaction hot-pressing from Mo, Si, SiC, Ti, Al powder mixture under different temperatures. XRD results show that the main products are Mo(Si,Al)2 and Ti3SiC2. Part of TiC and SiC also appeared at low treating temperature. With the treating temperature increasing SiC disappeared. No evidence show lattice change of Mo(Si,Al)2. It must be the results of sufficient Al added. The electrical conductivity properties were also investigated. Samples treating under different temperatures showed different changes. Samples under high treating temperature showed a near linear change ranging from 27∼800°C and Samples under low treating temperature showed a nonlinear change.
The reaction mechanism of silicon and iron composite powders was clarified during the fabrication of high silicon iron sheet with the Si-content of 6.5wt% by Direct Powder Rolling (DPR) technique. The changes of phase...
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The reaction mechanism of silicon and iron composite powders was clarified during the fabrication of high silicon iron sheet with the Si-content of 6.5wt% by Direct Powder Rolling (DPR) technique. The changes of phase composition and structure evolvement were mainly studied, It is found that a local graded structure, Fe-Fe(Si)-Fe3Si(Si)-Si, forms when sintering at 950-10007deg;C, which plays an important role in the DPR process. Fe 3Si(Si) phase keeps higher content of Si, and Fe(Si) phase remains the state with much lower Si-content, thus provides good mechanical proprieties of rolling and cutting. Then, the subsequent sintering at about 1200C improves the density and makes the distribution of Si homogeneous in the final high silicon iron sheets.
Translucent AlN ceramics were fabricated using spark plasma sintering (SPS) technique with 3wt% CaF2 as sintering additive. The samples achieved 52.4% maximum transmittance in medium IR region after 10 min holding tim...
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Translucent AlN ceramics were fabricated using spark plasma sintering (SPS) technique with 3wt% CaF2 as sintering additive. The samples achieved 52.4% maximum transmittance in medium IR region after 10 min holding time by spark plasma sintering at 1800°C and 30 MPa pressure in N2. The results from XRD, SEM, TEM and EDX showed that the sintered bodies were densely compacted and highly pure with fine grain size and uniform microstructures. No secondary phases were observed at the grain boundaries and triple grain junctions, which guaranteed good optical property of the sintered bodies.
In the present study, α-Si3N4 is prepared by using MgO and Al2O3 as the sintering additives and spark plasma sintering (SPS) technique. The SPS sintering mechanism is discussed. The relationship between the content o...
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In the present study, α-Si3N4 is prepared by using MgO and Al2O3 as the sintering additives and spark plasma sintering (SPS) technique. The SPS sintering mechanism is discussed. The relationship between the content of sintering additives, sintering temperature and relative densities of the samples is analyzed. The results suggest that when the sintering temperature is 1300-1500°C, the content of sintering additives is 6wt.%-10wt.%, the relative density of sintered samples is 64%-96%. When the sintering temperature reaches 1400°C, the content of sintering additives is 10%, the samples can be fully dense sintered and the relative density can be up to 95%. The sintering mechanism is liquid phase sintering. The bending strength of the sintered samples is 50-403MPa and has a close correlation with the relative density.
In this study, SnO2-based ceramics, with 0.5%CuO as sintering aid and Sb2O3 as activator of the electrical conductivity, was obtained by pressureless sintering at 1450°C for 5 h. Densification behavior and micros...
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In this study, SnO2-based ceramics, with 0.5%CuO as sintering aid and Sb2O3 as activator of the electrical conductivity, was obtained by pressureless sintering at 1450°C for 5 h. Densification behavior and microstructure development strongly depend on Sb2O 3. The characteristization of microstructures on Sb2O 3 concentrations are analyzed by SEM. A small amount of CuO improves densification;Sb2O3 retards the densification of SnO 2-based ceramic. The electrical resistivities of SnO 2-based ceramics with different contents of Sb2O 3 are measured by the standard four probe method and varied in a wide range. The electrical resistivity arrives the minimal value of 4.964×10-2 Ω·cm for 99%SnO2+0.5%CuO +0.5%Sb2O3. More content of Sb2O3 than that of CuO causes the degression of density and the increasing of electrical resistivity of ceramics.
A novel method was used to fabricate AlN coating on graphite substrate. This approach included two steps： firstly, the emulsion composed of BN and anhydrous ethanol was sprayed on the surface of the graphite substrat...
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A novel method was used to fabricate AlN coating on graphite substrate. This approach included two steps： firstly, the emulsion composed of BN and anhydrous ethanol was sprayed on the surface of the graphite substrate; secondly, AlN coating was formed through the in-situ reaction of Al with the sprayed BN. The reaction was investigated by thermogravimetric-differential thermal analysis （TG-DTA）, and the phase composition in the synthetic process was characterized by X-ray diffraction （XRD）. Scanning electronic microscopy （SEM） was used to observe the morphology, and electron probe microanalysis （EPMA） was used to observe the distribution of the elements. The experimental results show that the AlN coating is dense and bonded with graphite tightly.
Nano-sized turbostritic-BN (t-BN) was fabricated through chemical process using boric acid and urea in this work. By the same method, the AlN powders coated with nano-BN were prepared too. The results of X-ray diffrac...
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Nano-sized turbostritic-BN (t-BN) was fabricated through chemical process using boric acid and urea in this work. By the same method, the AlN powders coated with nano-BN were prepared too. The results of X-ray diffraction (XRD) and transmission electron microscope (TEM) revealed that nano-sized t-BN was synthesized at about 600°C in nitrogen gas and it surrounded the surface of AlN particles. High-density AlN/BN nano-composites were fabricated spark plasma sintering (SPS). Microstructure and properties of AlN/BN nano-composites (5∼30vol% BN) were investigated. The h-BN flake particles were homogenously dispersed at AlN grain boundaries and within grains in the AlN/BN composites. A little nano-BN additions significantly improved the bending strength of the nano-composites. However, the bending strength was decreased with the BN content increasing. The thermal conductivity of AlN/BN nano-composites was investigated too.
AlN ceramics doped with yttrium o5xide (Y2O3) as the sintering additive were prepared via the spark plasma sintering (SPS) technique. The sintering behaviors and densification mechanism were mainly investigated. The r...
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AlN ceramics doped with yttrium o5xide (Y2O3) as the sintering additive were prepared via the spark plasma sintering (SPS) technique. The sintering behaviors and densification mechanism were mainly investigated. The results showed that Y2O3 addition could promote the AlN densification. Y2O3-doped AlN samples could be densified at low temperatures of 1600-1700°C in 20-25 minutes. The AlN samples were characterized with homogeneous microstructure. The Y-Al-O compounds were created on the grain boundaries due to the reactions between Y 2O3 and Al2O3 on AlN particle surface. With increasing the sintering temperature, AlN grains grew up, and the location of grain boundaries as well as the phase compositions changed. The Y/Al ratio in the aluminates increased, from Y3Al5O 12 to Y4lO3 and to Y4Al 2O9. High-density, the growth of AlN grains and the homogenous dispersion of boundary phase were helpful to improve the thermal conductivity of AlN ceramics. The thermal conductivity of 122Wm -1K-1 for the 4.0 mass%Y203-doped AlN sample was reached.
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