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Controllable Electrical Characteristic of Ti3c2t2/Mos2 (T=Oh, F, O) Interfaces for High Performance Electronics: Insights from First-Principles

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SSRN 2023年

作者： Zhang, Qiang Liu, Yan Zhang, Riguang Lv, Bohan Hao, Runfang Sang, Shengbo Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Electronic Information and Optical Engineering Taiyuan University of Technology Shanxi Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System of The Ministry of Education Taiyuan University of Technology Shanxi Taiyuan030024 China School of Software Taiyuan University of Technology Shanxi Taiyuan030024 China State Key Laboratory of Clean and Efficient Coal Utilization China Laboratory of Aerospace Servo Actuation and Transmission Beijing Institute of Precision Mechatronics and Controls Beijing100000 China

Two-dimensional (2D) semiconductors have shown competitive potential for applications into beyond-silicon electronics. However, the controllable electrical characteristic of metal-semiconductor interfaces is still a challenge for high performance electronics due to Fermi level pinning. To explore Ti3C2T2/MoS2 (T= OH, F, O) for high performance electronics, the vertical electric field and interlayer distance are adopted here to regulate the electrical characteristic of interfaces based on the first-principles calculations. Though this, the electrical characteristic of Ti3C2O2/MoS2 and Ti3C2F2/MoS2 are more sensitive to electric field or interlayer distance than that of Ti3C2(OH)2/MoS2. Especially, the negative electric field with larger than -0.2 V/Å makes Ti3C2O2/MoS2 interface change from p-type Schottky to n-type Schottky contact. Furthermore, the Ti3C2O2/MoS2 interface can not only switch from p-type Schottky to n-type Schottky contact, but also from p-type Schottky to n-type Ohmic contact by varying interlayer distance. Moreover, the tunneling barriers of all interfaces are more sensitive to interlayer distance than to electric field. This work provides vital insights for high-performance electronics of Ti3C2T2/MoS2 (T=OH, F, O) in experiments. © 2023, The Authors. All rights reserved.

关键词： Electric fields

Deep Learning Based 2D Human Pose Estimation:A Survey

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Tsinghua Science and technology 2019年第6期24卷 663-676页

作者： Qi Dang Jianqin Yin Bin Wang Wenqing Zheng School Beijing University of Posts and TelecommunicationsBeijing 100876China State Key Lab.of Intelligent Technology and Systems Tsinghua UniversityBeijing 100084China School of Information and Communication Engineering Beijing University of Posts and Telecommunications Beijing 100876China

Human pose estimation has received significant attention recently due to its various applications in the real world. As the performance of the state-of-the-art human pose estimation methods can be improved by deep learning, this paper presents a comprehensive survey of deep learning based human pose estimation methods and analyzes the methodologies employed. We summarize and discuss recent works with a methodologybased taxonomy. Single-person and multi-person pipelines are first reviewed separately. Then, the deep learning techniques applied in these pipelines are compared and analyzed. The datasets and metrics used in this task are also discussed and compared. The aim of this survey is to make every step in the estimation pipelines interpretable and to provide readers a readily comprehensible explanation. Moreover, the unsolved problems and challenges for future research are discussed.

关键词： human pose estimation deep learning computer vision

Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

MEC-Enabled Lane Change Prediction with Spatiotemporal Attention Mechanism for ITS

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MEC-Enabled Lane Change Prediction with Spatiotemporal Atten...

International Conference on intelligent Transportation

作者： Yuyi Chen Shichun Yang Zhiteng Wang Zhaobo Nan Rui Wang Fan Zhou Xiaoyu Yan Yaoguang Cao Department of Transportation Science and Engineering Beihang University Beijing China Innovation Center of New Energy Vehicle Digital Supervision Technology and Application for State Market Regulation Dean of School of Transportation Science & Engineering at Beihang University Beijing China Innovation Center of New Energy Vehicle Digital Supervision Technology and Application for State Market Regulation Research Institue of Aero-Engine Beihang University Beijing China State Key Lab of Intelligent Transportation System Research Institute for Frontier Science Beihang University Beijing China

Predicting lane change behavior is pivotal within intelligent Transportation systems (ITS) for enhancing vehicle adaptability and collision avoidance. Our innovation lies in deploying lane change prediction models in roadside Mobile Edge Computing (MEC) units for real-time predictions. We introduce a novel spatiotemporal attention model leveraging LSTM networks to extract interactive features, coupled with a Mixture Density Network for trajectory distribution. Experiments conducted on the NGSIM dataset affirm our model's superior performance. Furthermore, we delve into the lane change event detection and publication process within our MEC platform, which harnesses roadside camera-collected data. Notably, low latency in our approach establishes a robust foundation for real-time applications in ITS, rendering it a compelling candidate for future research and development.

关键词：

Model-Based and Data-Driven Control of Event- and Self-Triggered Discrete-Time LTI systems

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arXiv

arXiv 2022年

作者： Wang, Xin Berberich, Julian Sun, Jian Wang, Gang Allgöwer, Frank Chen, Jie The Key Laboratory of Intelligent Control and Decision of Complex System Beijing Institute of Technology Beijing10081 China The Beijing Institute of Technology Chongqing Innovation Center Chongqing401120 China The University of Stuttgart Institute for Systems Theory and Automatic Control Stuttgart70550 Germany The Department of Control Science and Engineering Tongji University Shanghai201804 China The State Key Lab of Intelligent Control and Decision of Complex Systems School of Automation Beijing Institute of Technology Beijing100081 China

The present paper considers the model-based and data-driven control of unknown linear time-invariant discretetime systems under event-triggering and self-triggering transmission schemes. To this end, we begin by presenting a dynamic event-triggering scheme (ETS) based on periodic sampling, and a discrete-time looped-functional approach, through which a model-based stability condition is derived. Combining the model-based condition with a recent data-based system representation, a data-driven stability criterion in the form of linear matrix inequalities (LMIs) is established, which also offers a way of co-designing the ETS matrix and the controller. To further alleviate the sampling burden of ETS due to its continuous/periodic detection, a self-triggering scheme (STS) is developed. Leveraging pre-collected input-state data, an algorithm for predicting the next transmission instant is given, while achieving system stability. Finally, numerical simulations showcase the efficacy of ETS and STS in reducing data transmissions as well as of the proposed co-design methods. Copyright © 2022, The Authors. All rights reserved.

关键词： Linear matrix inequalities

High-performance III-V/Si3N4 O-band External Cavity Tunable Laser

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High-performance III-V/Si3N4 O-band External Cavity Tunable ...

Conference on Lasers and Electro-Optics (CLEO)

作者： Yuyao Guo Xinhang Li Minhui Jin Chuxin Liu Weihan Xu Liangjun Lu Jingya Xie Jianping Chen Linjie Zhou Department of Electronic Engineering State Key Laboratory of Advanced Optical Communication Systems and Networks Shanghai Jiao Tong University Shanghai China SJTU-Pinghu Institute of Intelligent Optoelectronics Pinghu China Terahertz Technology Innovation Research Institute Terahertz Spectrum and Imaging Technology Cooperative Innovation Center Shanghai Key Lab of Modern Optical System University of Shanghai for Science and Technology Shanghai China

We present a III-V/Si 3 N 4 O-band hybrid laser, which shows a high output power of 42 mW, wide tuning range of 62 nm with side-mode suppression ratio >50 dB, and narrow intrinsic linewidth of ~600 Hz.

ISBN: (数字)9781957171050

ISBN: (纸本)9781665466660

关键词： Power lasers Lasers and electrooptics Hybrid power systems Laser tuning Electrooptical waveguides Power generation

Tailoring the Anomalous Hall Effect in Van Der Waals Ferromagnet Fe3gete2

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SSRN 2024年

作者： Wu, Kaile Wang, Qin Wang, Junshan Jiang, Jiaolin Zhao, Tian Zhao, Dong Han, Dan Quan, Zhiyong Ma, Zongmin Wang, Haomin Sang, Shengbo Ge, Yang Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Electronic Information and Optical Engineering Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System The Ministry of Education Taiyuan University of Technology Taiyuan030024 China College of Materials Science and Engineering Taiyuan University of Technology Taiyuan030024 China Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education School of Chemistry and Materials Science Shanxi Normal University Taiyuan030031 China State Key Laboratory of Dynamic Measurement Technology North University of China Shanxi Taiyuan030051 China School of Semiconductor and Physics North University of China Shanxi Taiyuan030051 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Shanxi Research Institute of 6D Artificial Intelligence Biomedical Science Taiyuan030024 China

Two-dimensional van der Waals magnetic materials have shown fascinating natural ferromagnetic properties at the atomic level, which has great potential in fields of low power spintronics, quantum computing and optical communication. Herein, the ferromagnetism and magnetic anisotropy of bulk Fe3GeTe2 (FGT) were investigated, and the testing results indicate a pronounced vertical magnetic anisotropy below the Curie temperature (Tc=165 K) of FGT. In addition, the anomalous Hall effect of FGT nanoflakes was studied at various temperatures and thicknesses by standard Hall bar device in detail. The results show the anomalous Hall resistance (0.764 Ω at 20 K decreased to 0.332 Ω at 140 K) and the obvious rectangular magnetic hysteresis rings below Tc (165 K). Furthermore, we calculated the carrier concentration (2.5×1022 cm-3 at 20K) and mobility (13.3 cm2/(v·s) at 20K) under large magnetic field (-6 T~6 T). Particularly, we demonstrated that the strong tailoring ability of the anomalous Hall effect for FGT-based magnetoelectric transport devices comes form the regulation of magnetic moment by sample thickness and magnetic field angle. The above experimental results verify that FGT is expected to be a prime candidate material for ultrathin 2D spintronic devices to the next generation. © 2024, The Authors. All rights reserved.

关键词： Germanium alloys

Gan/Moo3 N-N Heterojunction Based Anti-Humidity Gas Sensor for No2 Real-Time Monitoring

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SSRN 2024年

作者： Hong, Yutao Han, Dan Duan, Qi Li, Donghui He, Xiuli Li, Bing Liang, Hua Li, Hongwei Sang, Shengbo Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Integrated Circuits Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education Taiyuan University of Technology Taiyuan030024 China State Key Laboratory of Transducer Technology Aerospace Information Research Institute Chinese Academy of Sciences Beijing100190 China Shanxi Province Key Laboratory of Oral Diseases Prevention and New Materials Shanxi Medical University School and Hospital of Stomatology Shanxi Taiyuan030001 China Shanxi Province Cancer Hospital Shanxi Hospital Affiliated to Cancer Hospital Chinese Academy of Medical Sciences Cancer Hospital Affiliated to Shanxi Medical University Taiyuan030000 China University of Chicago United States

Effective and accurate detection of NO2 gas is crucial for protecting the environment and public health. In this work, balsam pear-like GaN/MoO3 porous nanosheets (GaN/MoO3) composites were synthesized by in situ assembling, the hydrothermal method, and the nitridation process to detect NO2. A series of characterization methods were used to manifest the successful synthesis and to analyze the morphology and elemental composition features of GaN/MoO3 composites. The results of the gas-sensing experiments show that, at the operating temperature of 225°C, the gas sensor based on the optimal ratio of GaN/MoO3 composites exhibits a 25-fold lower limit of detection for NO2 than that of MoO3, with a reduction of baseline resistance drift. Further, the response value of the sensor based on GaN/MoO3 composites to 200 ppm NO2 (44.74) is 4.36 times higher than that of the sensor based on pure GaN, with an improvement in stability. Meanwhile, the sensor possessed excellent repeatability, selectivity, stability, and splendid anti-humidity ability at 15-70% RH. The improved gas-sensing performance is ascribed to the unique microstructure of both GaN and MoO3 and the heterojunction effect between them. In addition, we constructed a real-time NO2 monitoring device based on the gas-sensing characteristic of GaN/MoO3, which realizes the alarm of excessive concentrations of NO2. Overall, this work provides a way to improve the ability of NO2 monitoring for the sensors of MoO3-based composites. © 2024, The Authors. All rights reserved.

关键词： Gallium nitride

Gan/Moo3 N-N Heterojunction Based Anti-Humidity Gas Sensor for No2 Real-Time Monitoring

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SSRN 2024年

作者： Hong, Yutao Han, Dan Duan, Qi Li, Donghui He, Xiuli Li, Bing Liang, Hua Li, Hongwei Sang, Shengbo Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Integrated Circuits Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System Ministry of Education Taiyuan University of Technology Taiyuan030024 China State Key Laboratory of Transducer Technology Aerospace Information Research Institute Chinese Academy of Sciences Beijing100190 China Shanxi Province Key Laboratory of Oral Diseases Prevention and New Materials Shanxi Medical University School Hospital of Stomatology Shanxi Taiyuan030001 China Shanxi Province Cancer Hospital Shanxi Hospital Affiliated to Cancer Hospital Chinese Academy of Medical Sciences Cancer Hospital Affiliated to Shanxi Medical University Taiyuan030000 China University of Chicago United States

Effective and accurate detection of NO2 gas is crucial for protecting the environment and public health. In this work, balsam pear-like GaN/MoO3 porous nanosheets (GaN/MoO3) composites were synthesized by in situ assembling, the hydrothermal method, and the nitridation process to detect NO2. A series of characterization methods were used to manifest the successful synthesis and to analyze the morphology and elemental composition features of GaN/MoO3 composites. The results of the gas-sensing experiments show that, at the operating temperature of 225℃, the gas sensor based on the optimal ratio of GaN/MoO3 composites exhibits a 25-fold lower limit of detection for NO2 than that of MoO3, with a reduction of baseline resistance drift. Further, the response value of the sensor based on GaN/MoO3 composites to 200 ppm NO2 (44.74) is 4.36 times higher than that of the sensor based on pure GaN, with an improvement in stability. Meanwhile, the sensor possessed excellent repeatability, selectivity, stability, and splendid anti-humidity ability at 15-70% RH. The improved gas-sensing performance is ascribed to the unique microstructure of both GaN and MoO3 and the heterojunction effect between them. In addition, we constructed a real-time NO2 monitoring device based on the gas-sensing characteristic of GaN/MoO3, which realizes the alarm of excessive concentrations of NO2. Overall, this work provides a way to improve the ability of NO2 monitoring for the sensors of MoO3-based composites. © 2024, The Authors. All rights reserved.

关键词： III-V semiconductors