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Spin logic devices based on negative differential resistance -enhanced anomalous Hall effect

International Journal of Minerals,Metallurgy and Materials 2024年第6期31卷 1437-1448页

作者： Hongming Mou Ziyao Lu Yuchen Pu Zhaochu Luo Xiaozhong Zhang Key Laboratory of Advanced Materials(MOE) School of Materials Science and EngineeringTsinghua UniversityBeijing 100084China State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China

Owing to rapid developments in spintronics,spin-based logic devices have emerged as promising tools for next-generation computing *** paper provides a comprehensive review of recent advancements in spin logic devices,particularly focusing on fundamental device concepts rooted in nanomagnets,magnetoresistive random access memory,spin–orbit torques,electric-field modu-lation,and magnetic domain *** operation principles of these devices are comprehensively analyzed,and recent progress in spin logic devices based on negative differential resistance-enhanced anomalous Hall effect is *** devices exhibit reconfigur-able logic capabilities and integrate nonvolatile data storage and computing *** current-driven spin logic devices,negative differential resistance elements are employed to nonlinearly enhance anomalous Hall effect signals from magnetic bits,enabling reconfig-urable Boolean logic ***,voltage-driven spin logic devices employ another type of negative differential resistance ele-ment to achieve logic functionalities with excellent cascading *** cascading several elementary logic gates,the logic circuit of a full adder can be obtained,and the potential of voltage-driven spin logic devices for implementing complex logic functions can be *** review contributes to the understanding of the evolving landscape of spin logic devices and underscores the promising pro-spects they offer for the future of emerging computing schemes.

关键词： spin logic spin–orbit torque negative differential resistance full-adder

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Entanglement-controlled vectorial meta-holography

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光：科学与应用（英文版） 2025年第5期14卷 1377-1386页

作者： Sheng Ye Yue Han Li-Zheng Liu Weiping Wan Ruiqi Wang Mingna Xun Qiang Li Qihuang Gong Jianwei Wang Yan Li State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter Peking UniversityBeijing 100871China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006 ShanxiChina Peking University Yangtze Delta Institute of Optoelectronics Nantong 226010 JiangsuChina Hefei National Laboratory Hefei 230088China

Metasurfaces can precisely manipulate the amplitude,phase,and polarization of incident light through subwavelength structures,greatly advancing the quantum meta-holographic ***,the current methods of using quantum holography only control either the amplitude or the phase on the imaging plane,so the resulted scalar holography without the polarization distribution has limited imaging ***,the vectorial meta-holography using entangled signal-idler photon pairs is experimentally demonstrated to realize remotely controlled multi-channel quantum *** simultaneous control of the amplitude ratio between two cross-polarization holographic images and their phase difference on the image plane,the polarization distribution accordingly changes with the incident polarization *** accurate correspondence ensures the correct reconstruction of 32 incident polarization states with an average fidelity up to 94.78％.This enables entangled idler photons to remotely control the holographic images reconstructed by the entangled signal photons,where the signal-to-noise ratio is as high as 10.78 dB,even for maximally mixed quantum *** vectorial meta-holography using entangled states has a larger polarization state information capacity and will facilitate miniaturized quantum imaging and efficient quantum state tomography.

关键词： controlled entanglement meta-holography vectorial

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Paths on breaking 20% efficiency of transport-layer-free perovskite solar cells

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Journal of Energy Chemistry 2024年第11期98卷 391-393页

作者： Xiaoyu Yang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of PhysicsFrontiers Science Center for Nano-optoelectronics&Collaborative Innovation Center of Quantum MatterPeking UniversityBeijing 100871China

In the perovskite photovoltaic community, sandwiched device configurations such as n-type transport layer-perovskite-p-type transport layer (n-i-p, regular) or p-i-n (inverted) are research mainstreams for higher power conversion efficiencies (PCEs)[1].One of the important functions of these transport layers (TLs) is the construction of built-in-electric fields (BFs) for carrier directional diffusion [2].

关键词： Perovskite solar cell Transport-layer-free Photoelectric simulation

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Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source

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Chinese physics B 2023年第7期32卷 435-442页

作者：薛院院王祖军陈伟郭晓强姚志斌何宝平聂栩赖善坤黄港盛江坤马武英缑石龙 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking UniversityBeijing 100871China State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect Northwest Institute of Nuclear TechnologyXi’an 710024China School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105China

Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation *** hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are *** dark current is calculated according to the mean dark signal at various integration *** single-particle displacement damage and transient response are also observed based on the online measurement *** trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation *** mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach *** addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)***-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal.

关键词： displacement damage effects charge-coupled device(CCD) China Spallation Neutron Source(CSNS) mechanisms technology computer-aided design(TCAD)

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Buried Interface Molecular Hybrid Enables Efficient Perovskite Solar Cells

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Chinese physics Letters 2024年第9期41卷 151-152页

作者： Tianyu Huang Rui Zhu Deying Luo State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of PhysicsFrontiers Science Center for Nano-optoelectronics&Collaborative Innovation Center of Quantum MatterPeking UniversityBeijing 100871China Department of Chemical and Nano Engineering University of California San DiegoLa JollaCAUSA

Perovskite solar cells(PSCs)with a positive-intrinsicnegative(p–i–n,commonly referred to as“inverted”)structure are becoming commercially attractive due to their superior power conversion efficiency(PCE)and better operational stability as compared to the“normal”structure device.^([1–5])Nonetheless,further improvements in the device performance of inverted PSCs are hampered by interface losses,particularly where the buried interfaces are responsible for perovskite crystallization and chargecarrier extraction.^([6–9])

关键词： attractive perovskite crystallization

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Plasmonically engineered light-matter interactions in Aunanoparticle/MoS_(2) heterostructures for artificial optoelectronic synapse

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Nano Research 2022年第4期15卷 3539-3547页

作者： Zhuoran Luo Yunfei Xie Ziwei Li Yajuan Wang Lihui Li Ziyu Luo Chenguang Zhu Xin Yang Ming Huang Jianhua Huang Delang Liang Xiaoli Zhu Dong Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan UniversityChangsha 410082China State Key Laboratory of Artificial Microstructure&Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100084China

Optoelectronic synaptic elements are emerging functional devices for the vigorous development of advanced neuromorphic computing technology in the post-Moore ***,optoelectronic devices based on transition metal dichalcogenides(TMDs)are limited to their poor mobilities and weak light-matter interactions,which still hardly exhibit superior device performances in the application of artificial ***,we demonstrate the successful fabrication of Au nanoparticle-coupled MoS_(2)heterostructures via chemical vapor deposition(CVD),where the light absorption of MoS_(2)is greatly enhanced and engineered by plasmonic *** electrons are excited from Au nanoparticles,and then injected into MoS_(2)semiconductors under the light *** plasmonically-engineered photo-gating effect at the metal-semiconductor junction is demonstrated to create optoelectronic devices with excellent synaptic behaviors,especially in ultra-sensitive excitatory postsynaptic current(EPSC,9.6×10^(-3)nA@3.4 nW·cm^(-2)),ultralow energy consumption(34.7 pJ),long-state retention time(>1,000 s),and tunable synaptic plasticity *** material system of Au-nanoparticles coupled TMDs presents unique advantages for building artificial synapses,which may lead the future development of neuromorphic electronics in optical information sensing and learning.

关键词： synapse optoelectronic device surface plasmon photo-gating MoS_(2)

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Co-doped BaFe_(2)As_(2) Josephson junction fabricated with a focused helium ion beam

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Chinese physics B 2024年第4期33卷 181-186页

作者：陈紫雯张焱马平徐中堂李宇龙王越路建明马衍伟甘子钊 Applied Superconductivity Research Center Peking UniversityBeijing 100871China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics Peking UniversityBeijing 100871China Institute of Condensed Matter Physics School of PhysicsPeking UniversityBeijing 100871China Yangtze Delta Institute of Optoelectronics Peking UniversityBeijing 100871China Key Laboratory of Applied Superconductivity Institute of Electrical EngineeringChinese Academy of SciencesBeijing 100190China

Josephson junction plays a key role not only in studying the basic physics of unconventional iron-based superconductors but also in realizing practical application of thin-film based devices,therefore the preparation of high-quality iron pnictide Josephson junctions is of great *** this work,we have successfully fabricated Josephson junctions from Co-doped BaFe_(2)As_(2)thin films using a direct junction fabrication technique which utilizes high energy focused helium ion beam(FHIB).The electrical transport properties were investigated for junctions fabricated with various He^(+)irradiation *** junctions show sharp superconducting transition around 24 K with a narrow transition width of 2.5 K,and a dose correlated foot-structure resistance which corresponds to the effective tuning of junction properties by He^(+)*** J_c suppression by more than two orders of magnitude can be achieved by increasing the He^(+)irradiation dose,which is advantageous for the realization of low noise ion pnictide thin film *** Shapiro steps are observed under 10 GHz microwave *** above results demonstrate the successful fabrication of high quality and controllable Co-doped BaFe_(2)As_(2)Josephson junction with high reproducibility using the FHIB technique,laying the foundation for future investigating the mechanism of iron-based superconductors,and also the further implementation in various superconducting electronic devices.

关键词： focused helium ion beam Co doped BaFe_(2)As_(2) Josephson junction

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Room-temperature vertical ferroelectricity in rhenium diselenide induced by interlayer sliding

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Frontiers of physics 2023年第5期18卷 143-151页

作者： Fang Li Jun Fu Mingzhu Xue You Li Hualing Zeng Erjun Kan Ting Hu Yi Wan MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing and Department of Applied PhysicsNanjing University of Science and TechnologyNanjing 210094China International Center for Quantum Design of Functional Materials(ICQD) Hefei National Laboratory for Physical Sciences at the Microscaleand Department of PhysicsUniversity of Science and Technology of ChinaHefei 230026China State Key Laboratory for Artificial Microstructure&Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China

One variety of ferroelectricity that results from lateral relative movements between the adjacent atomic layers is referred to as sliding ferroelectricity,which generates an interfacial charge transfer and hence a polarization *** mechanism of sliding ferroelectricity existent in van der Waals crystals is quite distinct from the conventional ferroelectric switching mechanisms mediated by ion *** creates new possibilities for the design of two-dimensional(2D)ferroelectrics since it can be achieved even in non-polar *** 2D ferroelectrics can be widely employed for practical implementations,however,there is still significant work to be done on several fronts,such as exploring ferroelectricity possibly in more potential 2D ***,we report the experimental observation of room-temperature robust vertical ferroelectricity in layered semiconducting rhenium diselenide(ReSe_(2)),a representative member of the transition metal dichalcogenides material family,based on a combined research of nanoscale piezoresponse and second harmonic generation *** no such ferroelectric behavior was seen in 1L ReSe_(2),2L ReSe_(2)exhibits vertical ferroelectricity at ambient *** on density-functional theory calculations,we deduce that the microscopic origin of ferroelectricity for ReSe_(2)is uncompensated vertical charge transfer that is dependent on in-plane translation and switchable upon interlayer *** findings have important ramifications for the ongoing development of sliding ferroelectricity since the semiconducting properties and low switching barrier of ReSe2 open up the fascinating potential for functional nanoelectronics applications.

关键词： rhenium diselenide transition metal dichalcogenides vertical ferroelectricity sliding ferroelectricity

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Carbon-based perovskite solar cells with electron and hole-transporting/-blocking layers

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Materials Futures 2023年第2期2卷 8-23页

作者： Wenjin Yu Yu Zou Shining Zhang Zishi Liu Cuncun Wu Bo Qu Zhijian Chen Lixin Xiao State Key Laboratory for Artificial Microstructure and Mesoscopic Physics Department of PhysicsPeking UniversityBeijing 100871People’s Republic of China School of Materials Science and Engineering Hebei University of TechnologyTianjin 300130People’s Republic of China

Towards commercialization of perovskite solar cells(PSCs),further reducing the cost and increasing the stability of PSCs have been the most important tasks of researchers,as the efficiency of single-junction PSCs has reached a competitive level among all kinds of single-junction solar ***-electrode-based PSCs(CPSCs),as one of the most promising constructions for achieving stable economical PSCs,now attract enormous attention for their cost-effectiveness and ***,we briefly review the development of CPSCs and reveal the importance of n-i-p architecture for state-of-the-art ***,despite their promising potential,challenges still exist in CPSCs in the n-i-p architecture,which mainly stem from the incompact contact of the hole-transporting layer(HTL)/carbon ***,new carbon materials and/or novel manufacturing methods should be *** addition,HTL is yet to be appropriate for state-of-the-art CPSCs because the fabrication of carbon electrode could result in the destruction of the *** further enhance the performance of CPSCs,both the HTL and electron transport layer as well as their interfaces with perovskite active layer need to be *** recommend that the perovskite active layer,with its long carrier lifetime,strong carrier transport capability,and long-term stability,is necessary as well for improved performance of *** also highlight current researches on CPSCs and provide a systematic review of various types of regulation tools.

关键词： carbon-electrode-based PSCs n-i-p architecture electron transport layer hole-transporting layer interface

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Efficient microresonator frequency combs

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eLight 2024年第1期4卷 76-89页

作者： Qi‑Fan Yang Yaowen Hu Victor Torres‑Company Kerry Vahala State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and Frontiers Science Center for Nano‑optoelectronics School of PhysicsPeking UniversityBeijingChina John Paulson School of Engineering and applied science Harvard UniversityCambridgeBostonUSA Department of Microtechnology and Nanoscience Chalmers University of TechnologyGothenburgSweden T.J.Watson Laboratory of Applied Physics California Institute of TechnologyPasadenaUSA

The rapid development of optical frequency combs from their table-top origins towards chip-scale platforms has opened up exciting possibilities for comb functionalities outside *** nonlinear processes in microresonators have emerged as a mainstream comb-generating mechanism with compelling advantages in size,weight,and power *** established understanding of gain and loss in nonlinear microresonators,along with recently developed ultralow-loss nonlinear photonic circuitry,has boosted the optical energy conversion efficiency of microresonator frequency comb(microcomb)devices from below a few percent to above 50%.This review summarizes the latest advances in novel photonic devices and pumping strategies that contribute to these milestones of microcomb *** resulting benefits for high-performance integration of comb applications are also discussed before summarizing the remaining challenges.

关键词： Optical frequency comb Optical microresonator Nonlinear photonics

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