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High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications

Fundamental Research 2023年第3期3卷 403-408页

作者： Liwen Sang Meiyong Liao Masatomo Sumiya Xuelin Yang Bo Shen International Center for Materials Nanoarchitectonics(MANA) National Institute for Materials Science(NIMS)1-1 NamikiTsukubaIbaraki 305-0044Japan JST-PRESTO The Japan Science and Technology AgencyTokyo 102-0076Japan Research Center for Functional Materials National Institute for Materials Science1-1 NamikiTsukubaIbaraki 305-0044Japan State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijingChina

The highly efficient photovoltaic cells require the In-rich InGaN film with a thickness more than 300 nm to achieve the effective photo-electricity energy ***,the InGaN thick films suffer from poor crystalline quality and phase separations by using the conventional low-pressure metal organic chemical vapor deposition(MOCVD).We report on the growth of 0.3-1μm-thick InGaN films with a specially designed vertical-type high-pressure MOCVD at the pressure up to 2.5 *** In incorporation is found to be greatly enhanced at the elevated pressures although the growth temperatures are the *** phase separations are inhibited when the growth pressure is higher than atmospheric pressure,leading to the improved crystalline quality and better surface morphologies especially for the In-rich *** In 0.4 Ga 0.6 N with the thickness of 300 nm is further demonstrated as the active region of solar cells,and the widest photoresponse range from ultraviolet to more than 750 nm is achieved.

关键词： InGaN Solar cell High-pressure MOCVD Photo-electricity energy conversion In-rich XRD

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Antiferromagnetic ordering and large magnetic entropy in the layered rare-earth oxyhalide DyOX (X=F,Br)

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Physical Review B 2024年第21期110卷 214442-214442页

作者： Zhongchong Lin Ruichen Xie Baochun Wu Yuxuan Peng Xiaobai Ma Shaohua Fan Dong Zhou Rui Han Changsheng Wang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 China Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials College of Physics and Energy Fujian Normal University Fuzhou 350117 China State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100871 China Department of Nuclear Physics China Institute of Atomic Energy Beijing 102413 China Division of Functional Material Central Iron and Steel Research Institute Beijing 100081 China

The burgeoning field of rare-earth (RE)-based van der Waals (vdW) layered magnets is driven by their potential in novel magnetism and spintronics applications. These materials exhibit exceptional spin-lattice coupling and air stability, attributed to the strong spin-orbit coupling and substantial magnetic moments from the 4f electrons. This study investigates the structural and magnetic properties of dysprosium-based oxyhalide ternary compounds, DyOX (X=F,Br), which are the prime candidates for multiphase transitions and tunable magnetic anisotropy through halogen substitution at the vdW layer edges. Utilizing complementary neutron diffraction, first-principles calculations, and magnetic measurements, we elucidate the intrinsic properties of these oxyfluoride compounds. DyOF exhibits an antiferromagnetic (AFM) ground state below the Néel temperature (TN) of 3.7 K, with a commensurate propagation vector k = (0, 0, 3/2) and magnetic moments aligned within the ab plane. In contrast, DyOBr has a higher TN=9.9 K and displays more complex magnetic transitions. The large magnetic moment (∼10 µB/Dy), strong magnetic anisotropy, and field-induced metamagnetic transitions observed in DyOX (X=F,Br) magnetic insulators suggest their potential for realizing magnetism in the two-dimensional (2D) limit. The magnetocaloric effects are further investigated to manifest the properties of DyOX (X=F,Br). Notably, DyOF demonstrates a superior magnetic refrigeration capacity, with a maximum magnetic entropy change −ΔSM of 25.3 JK−1kg−1 and a relative cooling power of 530.2 Jkg−1 at 7 T, surpassing most vdW layered magnets. The findings contribute to the understanding of 4f electron-related properties in 2D magnetism and pave the way for emerging applications in antiferromagnetic spintronics and cryomagnetic refrigeration.

关键词： Magnetic anisotropy

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physics-knowledge-integrated neural network for quantum transport prediction of field-effect transistors

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Physical Review Applied 2025年第3期23卷 034066-034066页

作者： Xiuying Zhang Linqiang Xu Jing Lu Zhaofu Zhang Lei Shen Department of Mechanical Engineering National University of Singapore 9 Engineering Drive 1 Singapore 117575 Singapore School of Physics and Mechanics Wuhan University of Technology Wuhan 430070 China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics Peking University Beijing 100871 China The Institute of Technological Sciences Wuhan University Wuhan 430072 China

Quantum-mechanics-based transport calculations play an important role in the design of nanoelectronic field-effect transistors (FETs), but their computational intensity is the primary challenge. To address this, we developed a physics-knowledge-integrated neural network framework that directly predicts quantum transport current-voltage curves for gate-all-around FETs. This model significantly accelerates FET design optimization while maintaining the density-functional theory–level accuracy. By integrating key physical parameters of the channel materials, our model achieves a mean absolute error as low as 0.39. In particular, 98% of the current prediction residuals are within one order of magnitude, even with a limited training dataset. The differentiable nature of the neural network allows for automatic differentiation analysis, providing interpretable insights into our model. This ensures that the model has successfully learned quantum transport physics, thereby enhancing its reliability. Using our model, we efficiently identified symmetric p-type gate-all-around FETs with performance comparable to n-type ones, which are crucial for developing homogeneous complementary metal-oxide semiconductor circuits. This work provides an effective and reliable method for rapidly screening and optimizing FET designs, paving the way for accelerating the design process of next-generation electronic devices.

关键词： MOS devices

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Carbon-based perovskite solar cells with electron and hole-transporting/-blocking layers

材料展望（英文）

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材料展望（英文） 2023年第2期 8-23页

作者： Wenjin Yu Yu Zou Shining Zhang Zishi Liu Cuncun Wu Bo Qu Zhijian Chen Lixin Xiao State Key Laboratory for Artificial Microstructure and Mesoscopic Physics Department of PhysicsPeking UniversityBeijing 100871People's Republic of China School of Materials Science and Engineering Hebei University of TechnologyTianjin 300130People's Republic of China

Towards commercialization of perovskite solar cells(PSCs),further reducing the cost and increasing the stability of PSCs have been the most important tasks of researchers,as the efficiency of single-junction PSCs has reached a competitive level among all kinds of single-junction solar ***-electrode-based PSCs(CPSCs),as one of the most promising constructions for achieving stable economical PSCs,now attract enormous attention for their cost-effectiveness and ***,we briefly review the development of CPSCs and reveal the importance of n-i-p architecture for state-of-the-art ***,despite their promising potential,challenges still exist in CPSCs in the n-i-p architecture,which mainly stem from the incompact contact of the hole-transporting layer(HTL)/carbon ***,new carbon materials and/or novel manufacturing methods should be *** addition,HTL is yet to be appropriate for state-of-the-art CPSCs because the fabrication of carbon electrode could result in the destruction of the *** further enhance the performance of CPSCs,both the HTL and electron transport layer as well as their interfaces with perovskite active layer need to be *** recommend that the perovskite active layer,with its long carrier lifetime,strong carrier transport capability,and long-term stability,is necessary as well for improved performance of *** also highlight current researches on CPSCs and provide a systematic review of various types of regulation tools.

关键词： carbon-electrode-based PSCs n-i-p architecture electron transport layer hole-transporting layer interface

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Constant-Potential Machine Learning Molecular Dynamics Simulations Reveal Potential-Regulated Cu Cluster Formation on MoS2

arXiv

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arXiv 2024年

作者： Zhou, Jingwen Fu, Yunsong Liu, Ling Liu, Chungen School of Chemistry and Chemical Engineering Jiangsu Key Laboratory of Vehicle Emissions Control Nanjing University Nanjing210023 China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics Frontier Science Center for Nano-optoelectronics School of Physics Peking University Beijing100871 China

Electrochemical processes play a crucial role in energy storage and conversion systems, yet their computational modeling remains a significant challenge. Accurately incorporating the effects of electric potential has been a central focus in theoretical electrochemistry. Although constant-potential ab initio molecular dynamics (CP-AIMD) has provided valuable insights, it is limited by its substantial computational demands. Here, we introduce the Explicit Electric Potential Machine Learning Force Field (EEP-MLFF) model. Our model integrates the electric potential as an explicit input parameter along with the atom-centered descriptors in the atomic neural network. This approach enables the evaluation of nuclear forces under arbitrary electric potentials, thus facilitating molecular dynamics simulations at a specific potential. By applying the proposed machine learning method to the Cu/1T′-MoS2 system, molecular dynamics simulations reveal that the potential-modulated Cu atom migration and aggregation lead to the formation of small steric Cu clusters (Single Clusters, SCs) at potentials below -0.1 V. The morphological transformations of adsorbed Cu atoms are elucidated through electronic structure analyses, which demonstrates that both Cu-S and Cu-Cu bonding can be effectively tuned by the applied electric potential. Our findings present an opportunity for the convenient manufacture of single metal cluster catalysts through potential modulation. Moreover, this theoretical framework facilitates the exploration of potential-regulated processes and helps investigate the mechanisms of electrochemical reactions. © 2024, CC BY-NC-ND.

关键词： Molecular dynamics

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Taming Brillouin Optomechanics Using Supermode Microresonators

Taming Brillouin Optomechanics Using Supermode Microresonato...

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Asia Communications and Photonics Conference and Exhibition (ACP)

作者： Min Wang Zhi-Gang Hu Chenghao Lao Wenjing Liu Qi-Fan Yang Bei-Bei Li Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics Peking University Beijing China

We have designed and fabricated a supermode microresonstor to enhance Brillouin optomechanical coupling, and realized both phonon lasing and optomechanical strong coupling. This system exhibits a single-photon optomec...

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Electrically driven motion, destruction, and chirality change of polar vortices in oxide superlattices

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Science China(physics,Mechanics & Astronomy) 2022年第3期65卷 77-84页

作者： Pan Chen Congbing Tan Zhexin Jiang Peng Gao Yuanwei Sun Lifen Wang Xiaomei Li Ruixue Zhu Lei Liao Xu Hou Ke Qu Ning Li Xiaomin Li Zhi Xu Kaihui Liu Wenlong Wang Jinbin Wang Xiaoping Ouyang Xiangli Zhong Jie Wang Xuedong Bai Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China International Center for Quantum Materials Electron Microscopy LaboratorySchool of PhysicsPeking UniversityBeijing 100871China Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials School of Physics and ElectronicsHunan University of Science and TechnologyXiangtan 411201China Department of Engineering Mechanics Zhejiang UniversityHangzhou 310027China Collaborative Innovation Center of Quantum Matter Beijing 100871China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China State Key Laboratory for Artificial Microstructure&Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105China Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province Zhejiang UniversityHangzhou 310027China

Topological polar vortices, which are electric analogs of magnetic objects, present great potential in applications of future nanoelectronics because of their nanometer size, anomalous dielectric response, and chirality. To enable the functionalities, it is prerequisite to manipulate the polar states and chirality by using external stimuli. Here, we probe the evolutions of polar state and chirality evolutions of topological polar vortices in Pb TiO;/Sr TiO;superlattices under an electric field by using atomically resolved in situ scanning transmission electron microscopy and phase-field simulations. We find that, under electric field, the chiral vortex cores can be moved laterally to form close-pair structures, transform into a/c domain stripes, and finally become a nonchiral c-domain. Such transition is reversible and spontaneous after bias removal. Interestingly, during switching and backswitching events, the vortex rotation can be changed, offering a potential strategy to manipulate vortex chirality. The revealed dynamic behavior of individual polar vortices at the atomic scale provides fundamentals for future device applications.

关键词： chirality polar vortex ferroelectrics in situ transmission electron microscopy phase-field simulations

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Anisotropic emission of orientation-controlled mixed-dimensional perovskites for light-emitting devices

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Journal of Materiomics 2023年第4期9卷 762-767页

作者： Yuhui Qi Yang Liu Chen Lin Yunzhou Deng Peng Bai Yunan Gao Haiming Zhu Zhizhen Ye Yizheng Jin Key Laboratory of Excited-State Materials of Zhejiang Province State Key Laboratory of Silicon MaterialsDepartment of ChemistryZhejiang UniversityHangzhou310027China State Key Laboratory of Silicon Materials School of Materials and EngineeringZhejiang UniversityHangzhou310027China Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials Institute of WenzhouZhejiang UniversityWenzhou325006China State Key Laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang UniversityHangzhou310027China China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing100871China

Perovskite light-emitting diodes(PeLEDs)are attracting increasing attention owing to their impressive efficiencies and high luminance across the full visible light *** improvement of the external quantum efficiency(EQE)of planar PeLEDs is limited by the light out-coupling *** perovskite emitters with directional emission in PeLEDs is an effective way to improve light ***,we report that it is possible to achieve directional emission in mixed-dimensional perovskites by controlling the orientation of the emissive center in the *** characterization methods suggest that our mixed-dimensional perovskite film shows highly orientated transition dipole moments(TDMs)with the horizontal ratio of over 88%,substantially higher than that of the isotropic *** horizontally dominated TDMs lead to PeLEDs with exceptional high light out-coupling efficiency of over 32%,enabling a high EQE of 18.2%.

关键词： Perovskite light-emitting diodes Mixed dimensional peorvskite Transition dipole moment Emission orientation Light outcoupling

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Dynamically encircling exceptional points in a 3D photonic chip for robust all-optical logic operations

Dynamically encircling exceptional points in a 3D photonic c...

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2024 Conference on Lasers and Electro-Optics, CLEO 2024

作者： Li, Chu Li, Meng Wang, Ruiqi Chen, Yang Ren, Xifeng Yan, Linyu Li, Qiang Gong, Qihuang Li, Yan State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing100871 China Frontiers Science Center for Nano-Optoelectronics Peking University Beijing100871 China CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei230026 China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Hefei230026 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China Hefei National Laboratory Hefei230088 China Peking University Yangtze Delta Institute of Optoelectronics Nantong226010 China

We realize an on-chip eigenstate generator using a depth-varying 3D waveguide to overpass the encircling exceptional point (EEP) system. By combining two such generators, both the robust all-optical XOR and OR logic o... 详细信息

ISBN: (纸本)9781957171395

关键词： System-on-chip

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Dynamically encircling exceptional points in a 3D photonic chip for robust all-optical logic operations

Dynamically encircling exceptional points in a 3D photonic c...

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CLEO: Science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics

关键词： Photonic integrated circuits

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