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Experimental demonstration of 220-GHz terahertz signals wireless transmission over 4.6 km

science China(Information sciences) 2025年第1期68卷 386-388页

作者： Yi WEI Jianjun YU Mingxu WANG Xiongwei YANG Qiutong ZHANG Jingwen TAN Bing ZHANG Ying WU Yang HAN Peng TIAN Wen ZHOU Kaihui WANG Feng ZHAO State Key Laboratory of ASIC and System Key Laboratory for Information Science of Electromagnetic Waves (MoE)School of Information Science and Technology Fudan University School of Electronic Engineering Xi'an University of Posts and Telecommunications

The advancement of terahertz (THz) communication technology drives the evolution of wireless communication systems,offering novel pathways and technical means for the development of future 6G communication *** wireless communication systems are often constrained by bandwidth limitations of electronic devices in high frequency ***,THz communication technology leverages the characteristics of electromagnetic waves to transcend these limitations,enabling communication athigher frequencies and wider bandwidths.

关键词： wireless terahertz over demonstration experimental signals transmission

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Integrated optical frequency transfer and optical physical layer key distribution with enhanced link reciprocity detection

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science China(Information sciences) 2024年第7期67卷 335-336页

作者： Kunfeng XIE Liang HU Jianping CHEN Guiling WU State Key Laboratory of Advanced Optical Communication System and Networks Department of Electronic EngineeringShanghai Jiao Tong University

Optical fiber transmission has been widely used in communications and metrology, wherein optical frequency transfer (OFT) and optical physical layer secure key distribution (OKD) have become research hotspots [1, 2]. Moreover,OFT can perform a comparison between state-of-the-art optical atomic clocks and implement coherent optical phase transfer over long distances to support geodesy [1, 3].

关键词： distribution integrated physical detection layer link with enhanced frequency optical

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Polarization-induced photocurrent switching effect in heterojunction photodiodes

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Nano Research 2023年第4期16卷 5503-5510页

作者： Dingbo Chen Yu-Chang Chen Guang Zeng Yu-Chun Li Xiao-Xi Li Dong Li Chao Shen Nan Chi Boon S.Ooi David Wei Zhang Hong-Liang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Key Laboratory for Information Science of Electromagnetic Waves Department of Communication Science and EngineeringFudan UniversityShanghai 200433China Photonics Laboratory Division of ComputerElectricaland Mathematical Sciences and EngineeringKing Abdullah University of Science and Technology(KAUST)Thuwal 23955-6900Kingdom of Saudi Arabia

The unipolar photocurrent in conventional photodiodes(PDs)based on photovoltaic effect limits the output modes and potential versatility of these devices in *** photodiodes with photocurrent switching are emerging as a promising solution for obtaining photoelectric devices with unique and attractive functions,such as optical logic ***,we design an all-solid-state chip-scale ultraviolet(UV)PD based on a hybrid GaN heterojunction with engineered bipolar polarized electric *** introducing the polarization-induced photocurrent switching effect,the photocurrent direction can be switched in response to the wavelength of incident light at 0 V *** particular,the photocurrent direction exhibits negative when the irradiation wavelength is less than 315 nm,but positive when the wavelength is longer than 315 *** device shows a responsivity of up to−6.7 mA/W at 300 nm and 5.3 mA/W at 340 nm,*** particular,three special logic gates in response to different dual UV light inputs are demonstrated via a single bipolar PD,which may be beneficial for future multifunctional UV photonic integrated devices and systems.

关键词： GaN heterostructure ultraviolet(UV)photodiodes bipolar photocurrent optical logic device

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Recent Advances in Electrochemical-Based Silicon Production Technologies with Reduced Carbon Emission

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Research 2024年第1期2023卷 209-236页

作者： Feng Tian Zhongya Pang Shen Hu Xueqiang Zhang Fei Wang Wei Nie Xuewen Xia Guangshi Li Hsien-Yi Hsu Qian Xu Xingli Zou Li Ji Xionggang Lu State Key Laboratory of Advanced Special Steel&Shanghai Key Laboratory of Advanced Ferrometallurgy&School of Materials Science and Engineering Shanghai University99#Shangda RoadShanghai 200444China Center for Hydrogen Metallurgy Technology Shanghai UniversityShanghai 200444China State Key Laboratory of ASIC and System School of MicroelectronicsFudan University220#Handan RoadShanghai 200433China School of Energy and Environment Department of Materials Science and EngineeringCity University of Hong KongKowloon TongHong KongChina

Sustainable and low-carbon-emission silicon production is currently one of the main focuses for the metallurgical and materials science ***,considered a promising strategy,has been explored to produce silicon due to prominent advantages:(a)high electricity utilization efficiency;(b)low-cost silica as a raw material;and(c)tunable morphologies and structures,including films,nanowires,and *** review begins with a summary of early research on the extraction of silicon by *** has been placed on the electro-deoxidation and dissolution–electrodeposition of silica in chloride molten salts since the 21st century,including the basic reaction mechanisms,the fabrication of photoactive Si films for solar cells,the design and production of nanoSi and various silicon components for energy conversion,as well as storage ***,the feasibility of silicon electrodeposition in room-temperature ionic liquids and its unique opportunities are *** this basis,the challenges and future research directions for silicon electrochemical production strategies are proposed and discussed,which are essential to achieve large-scale sustainable production of silicon by electrochemistry.

关键词： directions electrodeposition electricity

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Construction of mesoporous silica-implanted tungsten oxides for selective acetone gas sensing

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Chinese Chemical Letters 2024年第11期35卷 492-498页

作者： Jichun Li Zhengren Wang Yu Deng Hongxiu Yu Yonghui Deng Xiaowei Cheng Kaiping Yuan Department of Chemistry Shanghai Stomatological Hospital&School of StomatologyState Key Laboratory of Molecular Engineering of PolymersShanghai Key Laboratory of Molecular Catalysis and Innovative MaterialsiCHEMFudan UniversityShanghai 200433China Frontier Institute of Chip and System State Key Laboratory of ASIC and SystemFudan UniversityShanghai 200433China State Key Lab of Transducer Technology Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050China

As a key biomarker for noninvasive diagnosis of diabetes,the selective detection of trace acetone in exhaled gas using a portable and low-cost device remains a great *** metal oxide(SMO)based gas sensors have drawn signification attention due to their potential in miniaturization,user-friendliness,high cost-effectiveness and selective real-time detection for noninvasive clinical ***,we propose a one-pot solvent evaporation induced tricomponent co-assembly strategy to design a novel ordered mesoporous SMO of silica-implanted WO_(3)(Si O_(2)/WO_(3))as sensing materials for trace acetone *** controlled co-assembly of silicon and tungsten precursors and amphiphilic diblock copolymer poly(ethylene oxide)-block-polystyrene(PEO-b-PS),and the subsequent thermal treatment enable the local lattice disorder of WO_(3)induced by the amorphous silica and the formation of ordered mesoporous Si O_(2)/WO_(3)hybrid walls with a unique metastableε-phase WO_(3)*** obtained mesoporous SiO_(2)/WO_(3)composites possess highly crystalline framework with large uniform pore size(12.0-13.3 nm),high surface area(99-113 m^(2)/g)and pore volume(0.17-0.23 cm^(3)/g).Typically,the asfabricated gas sensor based on mesoporous 2.5%Si O_(2)/WO_(3)exhibits rapid response/recovery rate(5/17 s),superior sensitivity(R_(air)/R_(gas)=105 for 50 ppm acetone),as well as high selectivity towards *** limit of detection is as low as 0.25 ppm,which is considerably lower than the thresh value of acetone concentration(>1.1 ppm)in the exhaled breath of diabetic patients,demonstrating its great prospect in real-time monitoring in diabetes ***,the mesoporous 2.5%Si O_(2)/WO_(3)sensor is integrated into a wireless sensing module connected to a smart phone,providing a convenient real-time detection of acetone.

关键词： Mesoporous materials ε-Tungsten oxide Silica-implanted Acetone sensing Real-time detection

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Contact optimisation strategy for wafer-scale field-effect transistors based on two-dimensional semiconductors

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Journal of Materials science & Technology 2023年第2期133卷 230-237页

作者： Ling Tong Xiaojiao Guo Zhangfeng Shen Lihui Zhou Jingyi Ma Xinyu Chen Honglei Chen Yin Xia Chuming Sheng Saifei Gou Die Wang Xinyu Wang Xiangqi Dong Yuxuan Zhu Xinzhi Zhang David Wei Zhang Sheng Dai Xi Li Peng Zhou Yangang Wang Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China College of Biological Chemical Science and EngineeringJiaxing UniversityJiaxing 314001China Key Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center Institute of Fine ChemicalsSchool of Chemistry&Molecular EngineeringEast China University of Science and TechnologyShanghai 200237China State Key Laboratory of Surface Physics and Department of Physics Fudan UniversityShanghai 200433China

Two-dimensional(2D)semiconductors can be utilized to continually miniaturize nanoscale electronic ***,achieving a practical solution for satisfying electrical contact with 2D semiconductors remains *** this study,we developed a novel contact structure with transferred multilayer(t-ML)MoS 2 by integrating both edge and top *** in-situ plasma treatment for the edge of the MoS 2 channel and successive metal deposition,we achieved 16 times lower contact resistivity(22.8 kΩμm)than that of the top contacted *** thickness-dependent electrical measurement indicates that edge contact is highly effective with thick MoS 2 due to the alleviated current-crowding effect re-sulting from the small contact *** temperature-dependent transport measurement further confirms the effective minimization of the influence from the Schottky barrier and tunnelling ***,the simplified resistor network model and energy-band diagram were proposed to understand the carrier transport *** work provides a practical strategy for achieving excellent electrical contact between bulk metals and 2D semiconductors,paving the way for future large-scale 2D electronic devices.

关键词： Edge contact 2D materials Field-effect transistors Schottky barrier Contact resistance

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A semantic and emotion-based dual latent variable generation model for a dialogue system

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CAAI Transactions on Intelligence Technology 2023年第2期8卷 319-330页

作者： Ming Yan Xingrui Lou Chien Aun Chan Yan Wang Wei Jiang State Key Laboratory of Media Convergence and Communication Communication University of ChinaBeijingChina School of Information and Communications Engineering Communication University of ChinaBeijingChina Key Laboratory of Acoustic Visual Technology and Intelligent Control System Communication University of ChinaBeijingChina Department of Electrical and Electronic Engineering The University of MelbourneMelbourneVictoriaAustralia School of Data Science and Intelligent Media Communication University of ChinaBeijingChina

With the development of intelligent agents pursuing humanisation,artificial intelligence must consider emotion,the most basic spiritual need in human *** emotional dialogue systems usually use an external emotional dictionary to select appropriate emotional words to add to the response or concatenate emotional tags and semantic features in the decoding step to generate appropriate ***,selecting emotional words from a fixed emotional dictionary may result in loss of the diversity and consistency of the *** propose a semantic and emotion-based dual latent variable generation model(Dual-LVG)for dialogue systems,which is able to generate appropriate emotional responses without an emotional *** from previous work,the conditional variational autoencoder(CVAE)adopts the standard transformer ***,Dual-LVG regularises the CVAE latent space by introducing a dual latent space of semantics and *** content diversity and emotional accuracy of the generated responses are improved by learning emotion and semantic features ***,the average attention mechanism is adopted to better extract semantic features at the sequence level,and the semi-supervised attention mechanism is used in the decoding step to strengthen the fusion of emotional features of the *** results show that Dual-LVG can successfully achieve the effect of generating different content by controlling emotional factors.

关键词： conditional variational autoencoder dual latent space emotional responses latent variable generation

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Thermal engineering in ALD-grown ZGO thin films for high-performance photodetectors

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材料科学技术（英文版） 2025年第6期209卷 19-26页

作者： Si-Tong Ding Yu-Chang Chen Cai-Yu Shi Lei Shen Qiu-Jun Yu Lang-Xi Ou Ze-Yu Gu Na Chen Ting-Yun Wang David Wei Zhang Hong-Liang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Shanghai 201203China National Integrated Circuit Innovation Center Shanghai 201203China Key Laboratory of Specialty Fiber Optics and Optical Access Networks Shanghai Institute Communication and Data ScienceShanghai UniversityShanghai 200444China State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Shanghai 201203China National Integrated Circuit Innovation Center Shanghai 201203China Jiashan Fudan Institute Jiaxing 314100China

Doped gallium oxide-based thin films are a class of wide-band semiconductor materials with the ad-vantages of chemically stable,tunable bandgap,and offer the benefit of ultraviolet *** order to obtain photodetectors(PDs)with superior response,higher demands are placed on the quality of growth and processing of doped *** this work,Zn-doped ternary metal oxide ZnGaO(ZGO)thin films were grown using the atomic layer deposition technique and annealed at different temperatures under an oxy-gen *** results showed that the high-quality ZGO films with good uniformity,high visible light transmittance,low roughness,and significant reduction of oxygen vacancies were obtained after ***,metal-semiconductor-metal PDs were prepared based on the studied ZGO *** responsivity(R),detectivity(D*),and external quantum efficiency(EQE)of the optimized device are 61.8 A W-1,1.2 x 1012 Jones,and 255.9％,*** to the unannealed device,the an-nealed ZGO PD achieves a maximum 309-fold increase in *** thermal engineering work may provide a strong reference for the development of low-cost,large-area,high-performance ultraviolet *** it also broadens the application of ternary metal oxides in optoelectronics.

关键词： Atomic layer deposition Oxygen annealing ZGO thin films Photodetector Ultraviolet detection

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Free-form acoustic topological waveguides enabled by topological lattice defects

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Physical Review B 2024年第18期109卷 L180101-L180101页

作者： Yin Wang Yong Ge Yu-Jing Lu Shuai Gu Yi-Jun Guan Qiao-Rui Si Shou-Qi Yuan Qiang Wang Hong-Xiang Sun Haoran Xue Research Center of Fluid Machinery Engineering and Technology School of Physics and Electrical Engineering School of Computer Science and Communication Engineering School of Physics Collaborative Innovation Center of Advanced Microstructures State Key Laboratory of Acoustics Department of Physics The

The emerging field of topological acoustics provides exciting possibilities for controlling sound propagation with extraordinary robustness. Conventional topological acoustic waveguides built from topological edge states, which arise solely from the nontrivial topology in the momentum space, usually have restricted shapes due to their crystalline structures. Here, we show that, using an acoustic topological system with both nontrivial topologies in the real and momentum spaces, free-form acoustic topological waveguides can be constructed. These topological waveguides support disclination-localized states, caused by the interplay between topological lattice defects and the valley-Hall topology. As demonstrated in our simulations and experiments, such disclination waveguides can take arbitrary shapes and form open arcs within the lattice, which are not possible for previous crystalline acoustic topological waveguides. Furthermore, by increasing the number of topological lattice defects, we can realize more than one topological waveguide in one lattice. They join at the topological lattice defect and form a topological waveguide network, enabling more complicated functionalities such as beam splitting. Our results point to a promising direction for free-form acoustic topological devices with the advantages of embedded forms, easy cascading, and high robustness.

关键词： Acoustics Defects Topological phase transition Topological phases of matter

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Experimental demonstration of D-band signals wireless transmission over 30 km

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science China(Technological sciences) 2025年第2期68卷 318-320页

作者： Yi WEI Xiongwei YANG Jianjun YU Xianming ZHAO Mingxu WANG Jingwen TAN Weiping LI Feng ZHAO Chengzhen BIAN Hansong MA Qinyi ZHANG Qiutong ZHANG Bing Zhang Wen ZHOU Kaihui WANG Sicong XU Jianguo YU State Key Laboratory of ASIC and System Key Laboratory for Information Science of Electromagnetic Waves(MoE)and School of Information Science and TechnologyFudan UniversityShanghai 200433China Harbin Institute of Technology Harbin 150001China School of Automation Xi’an University of Posts and TelecommunicationsXi’an 710121China School of Electronic Engineering Beijing University of Posts and TelecommunicationsBeijing 100876China

Due to the rise of innovative technologies like artificial intelligence(AI),the Internet of Things(IoT),and telemedicine,the demand for internet traffic is rapidly *** order to achieve ultra-high-speed wireless communication,many researchers are directing their efforts towards the *** D-band,spanning the frequency band 110-170 GHz,has abundant spectrum resources and license-free characteristics[1,2].

关键词： IoT wireless band

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