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A Self Bias-flip Piezoelectric Energy Harvester Array without External Energy Reservoirs achieving 488% Improvement with 4-Ratio Switched-PEH DC-DC Converter

A Self Bias-flip Piezoelectric Energy Harvester Array withou...

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Custom Integrated Circuits Conference (CICC)

作者： Zhen Li Zhiyuan Chen Man-Kay Law Sijun Du Xu Cheng Xiaoyang Zeng Jun Han State Key Laboratory of ASIC and System Fudan University Shanghai China State Key Laboratory of Analog and Mixed-Signal VLSI University of Macau Macau China Department of Microelectronics Delft University of Technology Delft Netherlands

With the advent of the lnternet-of-Things (1oT) era, sensor nodes are required in almost all fields to achieve a better interaction between humans and the environment. Piezoelectric energy harvester (PEH), which exhibits an equivalent electrical model of an AC current source /P in parallel with the inherent capacitor C P , is a promising technology to resolve the energy problem of such sensor nodes. Recently, inductor-based rectifiers, capacitor-based rectifiers and hybrid rectifiers have been proposed to improve the energy extraction efficiency of PEH devices [1]–[5]. However, these structures all require the aid of additional capacitors or inductors to achieve bias-flip operation, as illustrated in Fig. 1. These extra passive devices are typically large, which can be a major bottleneck in system-volumeconstrained applications such as MEMS [4]. In response to the above problem, this work proposes a novel 8-phase self bias-flip PEH interface with charge recycling and reusing (SBFRR). By using the C P of 4 PEHs as flipping capacitors, this scheme achieves a high voltage flipping efficiency without using extra energy reservoirs. The 4 C P can also serve as flying capacitors to achieve switched-PEH DC-DC (SPDC) conversion for MPPT, while maintaining a MOPIR of >3.5× with a PEH input voltage (V p ) from 0. 78Vto4.9V.

关键词： Micromechanical devices Capacitors Rectifiers Voltage Switches High-voltage techniques Reservoirs

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Dual Active Layer Mg-Doped InZnO Thin-Film Transistors with Ultra-Low Indium Doping 16

Dual Active Layer Mg-Doped InZnO Thin-Film Transistors with ...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Hu, Chun-Feng Zou, Zhongfei Wang, Mingxiang Qu, Xin-Ping Co. Ltd Suzhou215301 China Soochow University The School of Electronic and Information Engineering Suzhou215006 China Fudan University State Key Laboratory of Asic and System School of Microelectronics Shanghai200433 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

Dual active layer (DAL) Mg-doped InZnO thin film transistors (TFTs) are fabricated with ultralow usage of the rare metal In. Optimized DAL MIZO TFTs are obtained by adjusting In-doping, Mg content, and the thickness of two active layers. Compared with conventional single active layer TFTs, the DAL MIZO TFTs showed improved performance in terms of carrier mobility, threshold voltage (Vth), ON-state current (ION), and leakage current (IOFF). The front channel near the gate oxide has a lower Mg-doping and a higher In-doping compared with that of back channel, providing a high carrier concentration (ne) to increase ION. The back channel has a higher Mg-doping and a lower In-doping, providing a low ne to suppress IOFF. Furthermore, the heterojunction potential barrier formed between the two channel layers also helps to suppress the IOFF of the DAL TFTs. © 2022 IEEE.

关键词： Thin film transistors

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Laser-guided acoustic tweezers

arXiv

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arXiv 2022年

作者： Wang, Qing Chen, Shuhan Zhou, Jia Riaud, Antoine State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China

Acoustic tweezers1-3 can manipulate microscopic objects and cells independently of the optical4,5, magnetic6,7 and electrical properties 8,9 of the objects or their medium. However, because ultrasonic waves are attenuated within few millimeters, existing devices must synthesize intricate and powerful acoustic fields in a very narrow footprint immediately close to the manipulated object 10-14. Here we show that the design of microscale acoustic tweezers can be considerably simplified by taking advantage of the nonlinear nature of the acoustic trapping force. In our experiment, a featureless piezoelectric crystal coated with a photoacoustic conversion layer is hit by an electric pulse and a spatially modulated laser pulse to generate synchronized electro- and photo- acoustic waves. Interference between these waves creates a hybrid acoustic trapping force 30 times stronger than the laser pulse alone but with the same spatial information. By disentangling the tradeoff between spatial resolution and trapping force that has long held back the development of acoustic tweezers, this field hybridization strategy opens new avenues for cell manipulation in organ on chip and organ printing. Copyright © 2022, The Authors. All rights reserved.

关键词： Molecular biology

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A Reusable AI acceleration Architecture based on Matrix Multiplication for Convolutional Neural Network with Digital Signal ProcessingTasks

A Reusable AI acceleration Architecture based on Matrix Mult...

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International Conference on asic

作者： Bisheng Chen Xiayu Li Jicheng Lu Jun Yu State Key Laboratory of ASIC and System Fudan University Shanghai China Shanghai Fudan Microelectronics Group Co. Ltd Shanghai China

As AI begins to face more complex application scenarios, such as intelligent radar, autopilot and intelligent 5G, it often needs to work together with other traditional algorithms, mainly Digital Signal Processing (DSP) algorithms now. The proposed heterogeneous architecture with an AI core (on asic, for CNN) and IP core (on FPGA, for DSP) is usually adopted, but that’s inefficient due to the inconsistency in data transmission and operating frequency between chips. In order to solve this problem, this paper has proposed a reusable architecture based on Matrix Multiplication, which supports convolution, FFT and FIR operations on asic. We first analyzed the relationship among Convolution, FFT and FIR and find the best reusable architecture is Matrix multiplication. Then we decomposed the Convolution, FFT and FIR into Matrix multiplication, and designed the hardware architecture for them. Finally, we used Image registration algorithm to test the performance of our architecture, and get 500% speed up.

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DASP: Defect and Dopant ab-initio Simulation Package

arXiv

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arXiv 2022年

作者： Huang, Menglin Zheng, Zhengneng Dai, Zhenxing Guo, Xinjing Wang, Shanshan Jiang, Lilai Wei, Jinchen Chen, Shiyou State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, Defect and Dopant ab-initio Simulation Package (DASP), which is composed of four modules for calculating: (i) elemental chemical potentials, (ii) defect (dopant) formation energies and transition energy levels, (iii) defect and carrier densities and (iv) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases and calculation of the energy above convex hull when calculating the elemental chemical potential that stabilizes compound semiconductors, so it can perform high-throughput prediction of thermodynamic stability of multinary compounds. DASP calls the ab-initio softwares to perform the total energy, structural relaxation and electronic structure calculations of the defect supercells with different structure configurations and charge states, based on which the defect formation energies and transition energy levels are calculated and the corrections for electrostatic potential alignment and image charge interaction can be included. Then DASP can calculate the equilibrium densities of defects and electron and hole carriers as well as the Fermi level in semiconductors under different chemical potential conditions and different growth/working temperature. For high-density defects, DASP can calculate the carrier dynamics properties such as the photoluminescence (PL) spectrum, defect-related radiative and non-radiative carrier capture cross sections, and recombination lifetime of non-equilibrium carriers. DASP is expected to act as an automatic and reliable toolbox for calculating the defect and dopant properties, which can be compared to or used to interpret the experimental characterization results of defects using electrical and optical techniques such as PL and deep level transient spectroscopy (DLTS). Here we will introduce its unique f

关键词： Chemical stability

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A General-Purpose Compiler Design for Instruction-Based AI Accelerator Implementation

A General-Purpose Compiler Design for Instruction-Based AI A...

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International Conference on asic

作者： Mengxuan Wang Yuan Linghu Chang Wu State Key Laboratory of ASIC and System Fudan University Shanghai China Shanghai Fudan Microelectronics Group Co. Ltd. Shanghai China

With the rapid advancement of deep neural networks, the automatic generation of accelerator design is a very important problem for the deployment of AI applications, especially for edge computation. In this paper, we propose a general purpose compiler design for instruction-based CNN accelerator design. Our compiler incorporates network pruning and quantization capabilities for better performance. CDFG-based layer fusion and scheduling are used for heterogeneous computing with consideration of data transformation and synchronization between CPU and accelerator. A device file is used to define the instruction set and data space so that our compiler supports various accelerator designs uniformly. We used our compiler to implement VGG16 and yolo2 in FPGAs and achieved better performance than existing designs.

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Ultra-thin Body Buried In0.35Ga0.65As Channel MOSFETs with Extremely Low Off-current on Si Substrates

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Chinese Journal of Electronics 2021年第6期30卷 1017-1021页

作者： WANG Bo DING Peng FENG Ruize WANG Yanfu LIU Xiaoyu SUN Tangyou CHEN Yonghe LIU Xingpeng LI Qi LI Yue LIU Yingbo YIN Yihui ZHAO Hao ZHANG Wei LI Haiou JIN Zhi Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology High-Frequency High-Voltage Device and Integrated Circuits Center Institute of MicroelectronicsChinese Academy of Sciences The 34th Research Institute of China Electronics Technology Group Corporation State Key Laboratory of ASIC & System Fudan University

In this paper, we investigated the electrical properties of the Metal-oxide-semiconductor gate stack of Ti/Al2O3/In P under different annealing conditions. A minimum interface trap density of 3×1011cm-2eV-1is obtained without postmetallization annealing ***, utilizing Ti/Al2O3/In P MOS gate stack,we fabricated ultra-thin body buried In0.35 Ga0.65 As channel MOSFETs on Si substrates with optimized on/off trade-off. The 200 nm gate length device with extremely low off-current of 0.6 n A/μm, and on-off ratio of 3.3×10～5, is demonstrated by employing buried low indium(In0.35Ga0.65As) channel with In P barrier/spacer device structure, giving strong potential for future highperformance and low-power applications.

关键词： silicon gallium arsenide Si substrates size 200.0 nm minimum interface trap density III-V semiconductors As extremely low off-current postmetallization annealing treatment Si Ga In ultra-thin body optimized on-off trade-off MOSFET metal-oxide-semiconductor gate stack InP barrier-spacer device structure annealing elemental semiconductors O aluminium compounds different annealing conditions ultra-thin body buried channel MOSFET Ti-Al indium compounds interface states gate length device -InP

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Tuning 2D magnetism in Fe3+XGeTe2 films by element doping

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National Science Review 2022年第6期9卷 163-170页

作者： Shanshan Liu Zihan Li Ke Yang Enze Zhang Awadhesh Narayan Xiaoqian Zhang Jiayi Zhu Wenqing Liu Zhiming Liao Masaki Kudo Takaaki Toriyama Yunkun Yang Qiang Li Linfeng Ai Ce Huang Jiabao Sun Xiaojiao Guo Wenzhong Bao Qingsong Deng Yanhui Chen Lifeng Yin Jian Shen Xiaodong Han Syo Matsumura Jin Zou Yongbing Xu Xiaodong Xu Hua Wu Faxian Xiu State Key Laboratory of Surface Physics and Department of Physics Fudan University Institute for Nanoelectronic Devices and Quantum Computing Fudan University College of Science University of Shanghai for Science and Technology Laboratory for Computational Physical Sciences(MOE) Fudan University Solid State and Structural Chemistry Unit Indian Institute of Science School of Electronic Science and Engineering Nanjing University Department of Physics University of Washington Department of Electronic Engineering Royal Holloway University of London Materials Engineering The University of Queensland Beijing Key Laboratory of Microstructure and Property of Advanced Materials Institute of Microstructure and Property of Advanced Materials Beijing University of Technology The Ultramicroscopy Research Center Kyushu University State Key Laboratory of ASIC and System School of Microelectronics Fudan University Collaborative Innovation Center of Advanced Microstructures Department of Applied Quantum Physics and Nuclear Engineering Kyushu University Centre for Microscopy and Microanalysis The University of Queensland Shanghai Research Center for Quantum Sciences

Two-dimensional（2D） ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature（TC） or phase transitions. One of the challenges, however, is the realization of high TC2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe3+XGeTe2films with TCabove room temperature. By controlling the Fe composition in Fe3+XGeTe2, a continuously modulated TCin a broad range of 185–320 K has been achieved. This widely tunable TCis attributed to the doped interlayer Fe that provides a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe3+XGeTe2fashion.

关键词： 2D ferromagnetic material Fe3+XGeTe2 film element doping above room temperature TC tunability

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Memristor-based in-situ convolutional strategy for accurate braille recognition

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Science China Materials 2024年第12期67卷 3986-3993页

作者： Xianghong Zhang Congyao Qin Wenhong Peng Ningpu Qin Enping Cheng Jianxin Wu Yuyang Fan Qian Yang Huipeng Chen Institute of Optoelectronic Display National&Local United Engineering Lab of Flat Panel Display TechnologyFuzhou UniversityFuzhou 350002China Zhicheng College Fuzhou UniversityFuzhou 350002China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350100China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China

Signal processing has entered the era of big data,and improving processing efficiency becomes *** computing architectures face computational efficiency limitations due to the separation of storage and *** circuits based on multi-conductor devices enable full hardware convolutional neural networks(CNNs),which hold great potential to improve computational ***,when processing large-scale convolutional computations,there is still a significant amount of device redundancy,resulting in low computational power consumption and high computational ***,we innovatively propose a memristor-based in-situ convolutional strategy,which uses the dynamic changes in the conductive wire,doping area,and polarization area of memristors as the process of convolutional operations,and uses the time required for conductance switching of a single device as the computation result,embodying convolutional computation through the unique spiked digital signal of the *** strategy reasonably encodes complex analog signals into simple digital signals through a memristor,completing the convolutional computation at the device level,which is essential for complex signal processing and computational efficiency *** on the implementation of device-level convolutional computing,we have achieved feature recognition and noise filtering for braille *** believe that our successful implementation of convolutional computing at the device level will promote the construction of complex CNNs with large-scale convolutional computing capabilities,bringing innovation and development to the field of neuromorphic computing.

关键词： convolutional computing multi-conductor memristor conductive filaments

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A Single-Stage Four-Phase Dual-Output Regulating Rectifier With Ultrafast Transient Response Using Double-Frequency Current-Wave Modulation

A Single-Stage Four-Phase Dual-Output Regulating Rectifier W...

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IEEE International Symposium on Circuits and systems (ISCAS)

作者： Weiyan Li Xianren Hao Xiaguang Li Yan Ma Jingjing Liu Huaxi Zhang Xiaoyang Zeng Zhiyuan Chen State Key Laboratory of ASIC and System Fudan University Shanghai China Beijing Smartchip Microelectronics Technology Company Limited Beijing China Shanghai University Shanghai China Tsinghua University Beijing China

ISBN: (数字)9798350330991

ISBN: (纸本)9798350331004

This paper presents a 6.78MHz reconfigurable four-phase dual-output series resonant rectifier that integrates hysteresis control and the triple-mode double-frequency current wave modulation (DFCWM) technique. The rectifier accomplishes AC-DC rectification and dual-output voltage regulation within a single power stage, achieving high efficiency and a reduced number of off-chip components. The combination of hysteresis control with the triple-mode DFCWM enables rectification and voltage regulation without crossover adjustments through four independent phases. Without altering the external LC resonant frequency, more uniform power conversion and reduced output voltage ripple are achieved, while also enhancing the transient response speed of the load. When simulating with a 0.18-μm CMOS process, the dual-output voltages can be adjusted to 1.1V and 2.2V, reaching a maximum output power of 0.7W with a peak power conversion efficiency (PCE) of 89.2%. Furthermore, a rapid transient load response can be observed when the load current varies between 20mA and 200mA.

关键词： Transient response Rectifiers Modulation Wireless power transfer CMOS process Power conversion Voltage control

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