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Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)

作者： Xuefeng Li Yuting Wang Tianxiang Wu Yong Chen Junyan Ren Shunli Ma State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China State-Key Laboratory of Analog and Mixed-Signal VLSI and IME/ECE-FST University of Macau Macao China

This paper presents a V-band low noise amplifier (LNA) implemented in a $\boldsymbol{0.15-\mu} \mathbf{m}$ Gallium Arsenide (GaAs) pseudomorphic high electron-mobility transistor (pHEMT) technology. The LNA adopts a three-stage common-source (CS) topology. Each transistor has a bias circuit, and the microstrip-line inductor is used to realize the input noise matching network, the interstage, and the output matching network. Circuit simulations show that our LNA scores a 12.87-dB small-signal gain, the 3-dB bandwidth ranges from 60 GHz to 66 GHz, and the current consumption is 30 mA under a 5-V supply voltage. Its noise figure is 5.9 dB, and the output 1-dB compression point is 10.5 dBm. The chip area is $\boldsymbol{1.32}\times \boldsymbol{1.5}\mathbf{mm}^{2}$ .

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Dual Al₂O₃/Hf₀.₅Zr₀.₅O₂ Stack Thin Films for Improved Ferroelectricity and Reliability

IEEE Electron Device Letters

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IEEE Electron Device Letters 2022年第8期43卷 1235-1238页

作者： Yu-Chun Li Xiao-Xi Li Mao-Kun Wu Bo-Yao Cui Xue-Pei Wang Teng Huang Ze-Yu Gu Zhi-Gang Ji Ying-Guo Yang David Wei Zhang Hong-Liang Lu State Key Laboratory of ASIC and System School of Microelectronics Shanghai Institute of Intelligent Electronics and Systems Fudan University Shanghai China Department of Micro/Nano Electronics Shanghai Jiao Tong University Shanghai China

In this letter, a dual Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 (HZO) stack structure ferroelectric (FE) capacitor was designed and fabricated. It is found that the dielectric (DE) Al 2 O 3 thin film at the middle position of FE HZO thin films could apparently affect the behaviors of the oxygen vacancies at DE/FE interface and the electric field distribution, thereby affecting the corresponding ferroelectricity and reliability. By modulating the thickness of Al 2 O 3 middle layer (ML), it is demonstrated that the FE capacitor with 1 nm Al 2 O 3 ML exhibits better FE and cycling properties, including wake-up free, weaker fatigue effect, and robust endurance. Specifically, the device performs a considerable remnant polarization ( $2{P}_{\mathrm {r}}$ ) of $36.2 ~\mu \text{C}$ /cm 2 with a coercive electric field ( $2{E}_{\mathrm {c}}$ ) of 2.7 MV and $2{P}_{\mathrm {r}} > 20 ~\mu \text{C}$ /cm 2 after 10 10 cycles at 3 MV/cm. This work paves the pathway to optimize the ferroelectricity and reliability for future FE application.

关键词： Capacitors Reliability Fatigue Electric fields Zirconium Iron Hafnium oxide

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There is plenty of room at the top:generation of hot charge carriers and their applications in perovskite and other semiconductor-based optoelectronic devices

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Light(Science & Applications) 2021年第9期10卷 1630-1657页

作者： Irfan Ahmed Lei Shi Hannu Pasanen Paola Vivo Partha Maity Mohammad Hatamvand Yiqiang Zhan State Key Laboratory of ASIC and System Centre of Micro-Nano SystemSISTFudan University200433ShanghaiChina Department of Physics Government Postgraduate College(Higher Education Department-HED)Khyber Pakhtunkhwa21300MansehraPakistan State Key Laboratory of Surface Physics Key Laboratory of Micro-and Nano-PhotonicsFudan University200433ShanghaiChina Faculty of Engineering and Natural Sciences Tampere UniversityFI-33014TampereFinland KAUST Solar Center Division of Physical Science and EngineeringKing Abdullah University of Science and Technology(KAUST)Thuwal23955-6900RiyadhKingdom of Saudi Arabia

Hot charge carriers(HC)are photoexcited electrons and holes that exist in nonequilibrium high-energy states of photoactive *** cooling time and rapid extraction are the current challenges for the development of future innovative HC-based optoelectronic devices,such as HC solar cells(HCSCs),hot energy transistors(HETs),HC photocatalytic reactors,and lasing *** on a thorough analysis of the basic mechanisms of HC generation,thermalization,and cooling dynamics,this review outlines the various possible strategies to delay the HC cooling as well as to speed up their *** materials with slow cooling behavior,including perovskites and other semiconductors,are thoroughly *** addition,the opportunities for the generation of plasmon-induced HC through surface plasmon resonance and their technological applications in hybrid nanostructures are discussed in *** judiciously designing the plasmonic nanostructures,the light coupling into the photoactive layer and its optical absorption can be greatly enhanced as well as the successful conversion of incident photons to HC with tunable energies can also be ***,the future outlook of HC in optoelectronics is highlighted which will provide great insight to the research community.

关键词： optoelectronic charge plenty

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Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

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Chinese Physics B 2020年第7期29卷 588-595页

作者： Mei-Na Zhang Yan Shao Xiao-Lin Wang Xiaohan Wu Wen-Jun Liu Shi-Jin Ding State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China Center for Information Photonics and Energy Materials Shenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China

Photodetectors based on amorphous InGaZnO(a-IGZO)thin film transistor(TFT)and halide perovskites have attracted attention in recent ***,such a stack assembly of a halide perovskite layer/an a-IGZO channel,even with an organic semiconductor film inserted between them,easily has a very limited *** this article,we investigate photoresponsive characteristics of TFTs by using CsPbX3(X=Br or I)quantum dots(QDs)embedded into the a-IGZO channel,and attain a high photoresponsivity over 10^3A·W^-1,an excellent detectivity in the order of 10^16 Jones,and a light-to-dark current ratio up to 10^5 under visible *** should be mainly attributed to the improved transfer efficiency of photoelectrons from the QDs to the a-IGZO ***,spectrally selective photodetection is demonstrated by introducing halide perovskite QDs with different ***,this work provides a novel strategy of device structure optimization for significantly improving the photoresponsive characteristics of TFT photodetectors.

关键词： perovskite quantum dots a-IGZO thin-film transistor photoresponsive characteristics

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Deep Q-learning Sampling Based on Advantages 5

Deep Q-learning Sampling Based on Advantages

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5th International Conference on Intelligent Robotics and Control Engineering, IRCE 2022

作者： Xie, Ming Ren, Xinrui Yu, Jianbo Shu, Feng Shanghai Engineering Research Center of Ultra-Precision Motion Control and Measurement Academy for Engineering and Technology Fudan University Shanghai China School of Optical-Electrical and Computer Engineering University of Shanghai for Science and Technology Shanghai China School of Microelectronics Fudan University State Key Laboratory of ASIC and System Shanghai200433 China

ISBN: (数字)9781665469951

ISBN: (纸本)9781665469951

Deep Q-learning (DQN) has shown recent success on a wide range of complicated sequential decision-making issues, especially in the classic control area. However, in most DQN training, the sampling policies, particularly the ϵ-greedy policy and its derivation rules, produce noise erroneously due to the unsteadiness and unreliability of Q values utilized for searching for optimum actions. We begin with a fundamental hypothesis: complete advantages-based exploitation may be employed to help in successful exploration, and the gap between advantages on outstanding and poor actions tends to extend during the early phases of training before stabilizing. We then present a novel DQN architecture with a superior sampling policy that is totally and directly based on advantage values. This new DQN is named A-sampling DQN, and it requires minor code changes based on the original DQN codes. In most cases, A-sampling DQN and its derivatives outperformed the traditional DQN method. © 2022 IEEE.

关键词： Deep learning

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A Partially Binarized and Fixed Neural Network Based Calibrator for SAR-Pipelined ADCs Achieving 95.0-dB SFDR

A Partially Binarized and Fixed Neural Network Based Calibra...

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IEEE International Symposium on Circuits and systems

作者： Min Chen Yutong Zhao Nuo Xu Fan Ye Junyan Ren State-key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China

Recently, the neural network has been applied to calibrate the successive-approximation-register and pipelined analog-to-digital converters (SAR-Pipelined ADCs), which requires no prior knowledge. However, the large hardware area of the full-precision neural network (FPNN) limits the promotion of this method. This paper proposes an optimization scheme called partially binarized and fixed neural network (PBFNN) to simplify the hardware through the following mechanisms. First, the multipliers that occupy a considerable area are optimized by binarization. Second, the fixed layer does not require training, hence saving the hardware for backpropagation. A 14-bit 60 MS/s ADC prototyped in 28-nm CMOS process is used to verify the PBFNN-based calibration. The measurement results show that the ADC achieves an SFDR of 95.0 dB and an ENOB of 10.6 bit. Compared with the previous scheme, the SFDR and ENOB are lossless. We also synthesize both schemes in Synopsys Design Compiler with a 28-nm library. The synthesis result indicates that the hardware area is optimized by 71.95%.

关键词： Training Knowledge engineering Neural networks Hardware Libraries Calibration Optimization

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ZnSe/NiO heterostructure-based chemiresistive-type sensors for low-concentration NO_(2) detection

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Rare Metals 2021年第6期40卷 1632-1641页

作者： Wei Liu Ding Gu Jian-Wei Zhang Xiao-Gan Li Marina N.Rumyantseva Alexander M.Gaskov School of Microelectronics Key Laboratory of Liaoning for Integrated Circuits TechnologyDalian University of TechnologyDalian 116024China Liaoning Key Laboratory of Integrated Circuit and Biomedical Electronic System Faculty of Electronic Information and Electrical EngineeringDalian University of TechnologyDalian 116024China Laboratory of Chemistry and Physics of Semiconductor and Sensor Materials Chemistry DepartmentMoscow State UniversityMoscow 199991Russia

Novel ZnSe/NiO heterostructure nanocomposites were successfully prepared by one-step hydrothermal *** ZnSe/NiO-based sensor exhibits a response of~96.47% to 8×10^(-6) NO_(2) at 140℃,which is significantly higher than those of intrinsic ZnSe-based(no response)and NiO-based(~19.65%)*** theoretical detection limit(LOD)of the sensor is calculated to be 8.91×10^(-9),indicating that the sensor can be applied to detect the ultralow concentrations of NO_(2).The effect of NiO content on the gas-sensing performance of the nanocomposites was investigated in *** optimal NiO content in the nanocomposite is determined to be15.16%to achieve the highest *** as-fabricated sensor also presents an excellent selectivity to several possible interferents such as methanol,ethanol,acetone,benzene,ammonia and *** enhanced sensing performance can be attributed to the formation of p-p heterostructures between ZnSe and NiO,which induces the charge transfer across the interfaces and yields more active sites.

关键词： ZnSe/NiO heterostructure NO_(2)detection Gas sensors Charge transfer

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Biofunctionalization-Optimized MoS2-Based Fet Biosensors for the Detection of Tau Protein

SSRN

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SSRN 2024年

作者： Wen, Xiaohong Zhao, Xuefeng Shan, Xinzhi Lu, Hongliang Gao, Xiumin Zhuang, Songlin Engineering Research Center of Optical Instrument and System Ministry of Education Shanghai Key Lab of Modern Optical System School of Optical-Electrical and Computer Engineering University of Shanghai for Science and Technology 516 Jungong Road Shanghai200093 China State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai200050 China State Key Laboratory of ASIC System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai200433 China

Field effect transistor (FET)-based biosensors can accurately quantify changes in weak signals and show excellent performance advantages in the detection of trace biological disease markers. Biological functionalization (biofunctionalization) is an important factor in the fabrication of FET-based biosensors, which directly affects the performance of the biosensor. However, little attention from researchers has been paid to biofunctionalization, which results in uneven performance of biosensors. Herein, MoS2-based FET biosensors are designed and fabricated using four different biofunctionalization methods. The most suitable biofunctionalization method is obtained by comparing the sensing performances of different functionalized MoS2based FET biosensors. Moreover, the working mechanism of the optimized biofunctionalization method is explored. Besides, the biofunctionalization-optimized MoS2-based FET biosensor exhibits excellent sensing performance, achieving sensitive detection of Tau protein in the concentration range of 10-2~103 pg/mL. This study provides a universal and effective strategy for the biofunctionalization optimization of two-dimensional materials-based FET biosensors. © 2024, The Authors. All rights reserved.

关键词： Molybdenum compounds

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Biofunctionalization-Optimized Mos2-Based Fet Biosensors for the Detection of Tau Protein

SSRN

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SSRN 2024年

Field effect transistor (FET)-based biosensors can accurately quantify changes in weak signals and show excellent performance advantages in the detection of trace biological disease markers. Biological functionalization (biofunctionalization) is an important factor in the fabrication of FET-based biosensors, which directly affects the performance of the biosensor. However, little attention from researchers has been paid to biofunctionalization, which results in uneven performance of biosensors. Herein, MoS2-based FET biosensors are designed and fabricated using four different biofunctionalization methods. The most suitable biofunctionalization method is obtained by comparing the sensing performances of different functionalized MoS2-based FET biosensors. Moreover, the working mechanism of the optimized biofunctionalization method is explored. Besides, the biofunctionalization-optimized MoS2-based FET biosensor exhibits excellent sensing performance, achieving sensitive detection of Tau protein in the concentration range of 10-2~103 pg/mL. This study provides a universal and effective strategy for the biofunctionalization optimization of two-dimensional materials-based FET biosensors. © 2024, The Authors. All rights reserved.

关键词： Molybdenum compounds

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HD SRAM bitcell size shrink beyond 7nm node by CFET without EUV

HD SRAM bitcell size shrink beyond 7nm node by CFET without ...

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Advanced Patterning Solutions (IWAPS), International Workshop on

作者： Rongzheng Ding Yanli Li Yang Liu Qiang Wu Xiaona Zhu Shaofeng Yu State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China

ISBN: (纸本)9781665420808

As the critical dimensions of the transistor continue to be shrunk, the industry enters the EUV lithography era after the 7nm node. Due to the current high economic costs of EUV lithography in terms of equipment and process, it is desirable to achieve device area shrinking without using EUV lithography. In this paper, we introduce HD SRAM EUV-free designs using CFET. Various layout designs are put forward according to the feature of CFET, and their feasibility is evaluated. All the designs basically obey 7nm design rules and achieve impressive scaling of the bitcell area. This work provides a new starting node for CFET to increase transistor density.

关键词： Industries Extreme ultraviolet lithography Costs Conferences Layout Wires Random access memory

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