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Proceedings of the 58th Annual ACM/IEEE Design Automation Conference

作者： Yifeng Xiao Miaodi Su Haoyu Yang Jianli Chen Jun Yu Bei Yu Department of Microelectronics Fudan University Shanghai China College of Mathematics and Computer Science Fuzhou University Fuzhou China Department of Computer Science and Engineering The Chinese University of Hong Kong NT Hong Kong China Department of Microelectronics Fudan University Shanghai China and State Key Lab of ASIC & System Fudan University Shanghai China State Key Lab of ASIC & System Fudan University Shanghai China

ISBN: (纸本)9781665432740

With feature size scaling and complexity increase of circuit designs, hotspot detection has become a significant challenge in the very-large-scale-integration (VLSI) industry. Traditional detection methods, such as pattern matching and machine learning, have been made a remarkable progress. However, the performance of classifiers relies heavily on reference layout libraries, leading to the high cost of lithography simulation. Querying and sampling qualified candidates from raw datasets make active learning-based strategies serve as an effective solution in this field, but existing relevant studies fail to take sufficient sampling criteria into account. In this paper, embedded in pattern sampling and hotspot detection framework, an entropy-based batch mode sampling strategy is proposed in terms of calibrated model uncertainty and data diversity to handle the hotspot detection problem. Redundant patterns can be effectively avoided, and the classifier can converge with high celerity. Experiment results show that our method outperforms previous works in both ICCAD2012 and ICCAD2016 Contest benchmarks, achieving satisfactory detection accuracy and significantly reduced lithography simulation overhead.

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Ultrafast Switching in Integrated Photonics using Antimony

Ultrafast Switching in Integrated Photonics using Antimony

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CLEO: Science and Innovations, S and I 2022

作者： Aggarwal, Samarth Milne, Tara Farmakidis, Nikolaos Feldmann, Johannes Li, Xuan Shu, Yu Cheng, Zengguang Salinga, Martin Pernice, Wolfram H.P. Bhaskaran, Harish Department of Materials University of Oxford Parks Road OxfordOX1 3PH United Kingdom State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China Institut für Materialphysik Westfälische Wilhelms-Universität Münster Wilhelm-Klemm-Straße 10 Münster48149 Germany Department of Physics University of Münster Münster Germany

In this work, we demonstrate the use of Antimony as a reversible memory element in integrated photonics. We show antimony can be used as a multilevel memory with an ultrafast speed of operations. © Optica Publish... 详细信息

ISBN: (纸本)9781557528209

关键词： Antimony

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Selective Manipulation with Spiraling Transducer Acoustical Tweezers 16

Selective Manipulation with Spiraling Transducer Acoustical ...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Lin, Siying Zhou, Jia Riaud, Antoine Baudoin, Michael Gong, Zhixiong Berthet, Nicolars Fudan University State Key Laboratory of Asic and System School of Microelectronics Shanghai200433 China Universite de Lille Cnrs Centrale Lille Isen Universite Polytechnique des Hauts-de-France LilleF-59000 France Discovery and Molecular Characterization of Pathogens The Center for Microbes Development and Health Institut Pasteur of Shanghai - Chinese Academy of Sciences Shanghai200031 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

Microfluidics is fast becoming a critical technology for medicine and biology for its many important applications, e.g. precision medicine, single-cell sequencing and the manipulation of microparticles/droplets. Acoustic trapping technologies have received significant attention in microfluidics. Optical and magnetic tweezers have stringent limitations to manipulate cells. Acoustic tweezers based on spiraling interdigitated transducers (IDTs) are label-free, contactless and biocompatible, with excellent selectivity and manipulation strength. In our paper, we have developed flat, compact, focalized acoustical tweezers to manipulate cells/particles in 3D manipulation. These tweezers rely on focalized acoustical vortexes on a flat piezoelectric substrate. These tweezers' unique 2D selective manipulation through manipulating microparticles/cells/droplets, their simplicity, high biocompatibility and selective manipulation open tremendous perspectives in microbiology, microrobotics, and microscopy. © 2022 IEEE.

关键词： Biocompatibility

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A Sub-ns Pulsed VCSEL Driver with Real-Time Adaptive Current Control, Integrated Boost Switching Regulator and Class-1 Laser Eye Safety

A Sub-ns Pulsed VCSEL Driver with Real-Time Adaptive Current...

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European Conference on Solid-state Circuits (ESSCIRC)

作者： Tao Xia Yuan Li Liujia Song Wei Chen Hengwei Yu Miao Sun Lei Zhao Zhihong Lin Yuntong Tian Hao Yan Jiabin Meng Yifan Wu Yajie Qin Xuefeng Chen Shenglong Zhuo Patrick Yin Chiang State Key Laboratory of ASIC and System Fudan University Shanghai China R&D Department PhotonIC Technologies Co. Shanghai China College of Electronics and Information Engineering Tongji University Shanghai China

This paper presents a sub-ns pulsed laser diode driver IC for multi-junction vertical-cavity surface-emitting laser (VCSEL) arrays. An embedded real-time adaptive current control loop keeps the error of laser current amplitude within $\pm 3\%$ for 900ps $\sim 32\mathrm{~ns}$ pulses, even with PVT variations of the VCSEL and the driver. A boost switching regulator is integrated into the IC to convert a low supply voltage to the $5\sim 8.5\mathrm{~V}$ laser anode supply. A complete set of laser safety check blocks are integrated to guarantee class-1 eye safety, as the driver IC can stop emitting and cut off the laser supply when a laser safety hazard is detected.

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HfZrOₓ-Based Ferroelectric Tunnel Junction With Crested Symmetric Band Structure Engineering

IEEE Electron Device Letters

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IEEE Electron Device Letters 2021年第9期42卷 1311-1314页

作者： Yilun Liu Yuanyuan Cao Hao Zhu Li Ji Lin Chen Qingqing Sun David Wei Zhang State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China National Integrated Circuit Innovation Center Shanghai China

HfO 2 -based ferroelectric tunnel junction (FTJ) devices have been studied as an attractive candidate in future CMOS-compatible ultra-low-power non-volatile memory techniques. However, the relatively low remnant polarization in the HfO 2 -based thin films are still to be enhanced for further device implementation. Here, we propose an engineered FTJ device with crested symmetric band structure utilizing ZrO 2 as the seed layer and capping layer to sandwich the Zr-doped HfO 2 (HZO) film. An ultra-thin Al 2 O 3 layer is inserted in HZO which further improves the remnant polarization reaching up to 24.2 μC/cm 2 . The optimized FTJ devices exhibit larger tunneling electrical resistance ratio and higher read and write operation endurance. This illustrates a promising pathway to boost the ferroelectricity in HZO film by structure engineering and can be instructive for practical device applications.

关键词： Tunneling Films Resistance Junctions Electric fields Dielectrics Electrodes

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A Generalized tunneling current formula for metal/insulator heterojunctions under large bias and finite temperature

arXiv

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arXiv 2021年

作者： Cai, Zenghua Huang, Menglin Zhou, Peng Chen, Shiyou State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China Fudan University Shanghai China

The Fowler-Nordheim tunneling current formula has been widely used in the design of devices based on metal/insulator (metal/semiconductor) heterojunctions with triangle potential barriers, such as the flash memory. Here we adopt the model that was used to derive the Landauer formula at finite temperature, the nearly-free electron approximation to describe the electronic states in semi-infinite metal electrode and the Wentzel-Kramers-Brillouin (WKB) approximation to describe the transmission coefficient, and derive a tunneling current formula for metal/insulator heterojunctions under large bias and electric field. In contrast to the Fowler-Nordheim formula which is the limit at zero temperature, our formula is generalized to the finite temperature (with the thermal excitation of electrons in metal electrode considered) and the potential barriers beyond triangle ones, which may be used for the design of more complicated heterojunction devices based on the carrier tunneling. © 2021, CC BY-NC-ND.

关键词： Electron tunneling

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Ground-state structures, electronic structure, transport properties and optical properties of Ca-based anti-Ruddlesden-Popper phase oxide perovskites

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Physical Review Materials 2022年第11期6卷 114601-114601页

作者： Dan Han Mao-Hua Du Menglin Huang Shizhe Wang Gang Tang Thomas Bein Hubert Ebert Department of Chemistry University of Munich Munich 81377 Germany Materials Science & Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing 100081 China

Anti-Ruddlesden-Popper (ARP) phase oxide perovskites Ca4OA2 (A=P, As, Sb, Bi) have recently attracted great interest in the field of ferroelectrics and thermoelectrics, whereas their optoelectronic application is limited by their indirect band gaps. In this work, we introduce A-site anion ordering in Ca4OA2 (A=P, As, Sb, Bi), and find that it induces an indirect-to-direct band gap transition. Using first-principles calculations, we study the ground-state structures, electronic structure, transport properties and optical properties of anion-ordered ARP phase oxide perovskites Ca4OAA′. Based on analyses of the lattice dynamics, the ground-state structures of Ca4OAsSb and Ca4OAsBi are identified in P4/nmm symmetry and those of Ca4OPSb and Ca4OPBi are in the I222 symmetry. In contrast to the Ruddlesden-Popper (RP) phase oxide and halide counterparts, Ca4OAA′ (AA′=PSb, PBi, AsSb, AsBi) show larger band dispersion along the out-of-plane direction, smaller band gaps and highly enhanced out-of-plane mobilities, which results from the short interlayer distances and the enhanced covalency of the pnictides. Although the out-of-plane mobilities of these n=1 ARP phase perovskites highly increase, the comparatively strong polar optical phonon scattering limits the further enhancement of their mobilities. Furthermore, compared to RP phase halide Cs2PbI2Cl2, Ca4OAA′ show strong optical absorption around the band edges, and their optical absorption coefficients can reach 105cm−1 within the visible light region due to small band gaps. This study reveals that these ARP phase oxide perovskites exhibit the potential for optoelectronic applications.

关键词： Electronic structure First-principles calculations Perovskites Semiconductor compounds

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Facile synthesis of ironenickelecobalt ternary oxide(FNCO)mesoporous nanowires as electrode material for supercapacitor application

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Journal of Materiomics 2022年第1期8卷 221-228页

作者： Muhammad Usman Muhammad Tayyab Ahsan Sofia Javed Zeeshan Ali Yiqiang Zhan Irfan Ahmed Sajid Butt Mohammad Islam Asif Mahmood M.Aftab Akram School of Chemical and Materials Engineering National University of Sciences and Technology(NUST)Sector H-12Islamabad44000Pakistan Department of Materials Science and Engineering College of EngineeringPeking University100871BeijingChina State Key Laboratory of ASIC and System Center of Micro-Nano SystemSISTFudan UniversityShanghai200433China Department of Materials Science and Engineering Institute of Space TechnologyIslamabad44000Pakistan New Mexcico Institute of Mining&Technology SocorroNM 87801USA School of Chemical and Biomolecular Engineering The University of Sydney2006SydneyAustralia

Transition Metal Oxides have drawn significant attention due to their reversible chemical redox reaction and long-life *** agglomeration and shrinkage/expansion of transition metal oxides in the nanosize regime have a noticeable effect on their electrochemical *** in this work,mesoporous nanowires(NWs)with a typical composition of iron-nickel-cobalt ternary oxide(FNCO)are synthesized using a simple,facile and cost-effective hydrothermal process followed by furnace *** NWs are then extensively investigated as an electrode material for supercapacitor *** compare the electrochemical properties,nanowires of nickel-cobalt oxide(NCO),iron-cobalt oxide(FCO)and cobalt oxide(CO)were also produced by following the same *** FNCO NWs are found to overcome the shortcomings in the electrochemical energy storage devices by exhibiting higher values of specific capacitance(2197 Fg^(-1))and energy density(109 Whkg^(-1))at 1 Ag^(-1) current ***,the FNCO NWs also showed a cyclic charge/discharge stability of 96%even up to 20,000 ***,a FNCO//graphene asymmetric device,fabricated with FNCO NWs and graphene as positive and negative electrodes,respectively,which exhibit high energy density(47 Whkg^(-1)),power density(375 Wkg^(-1))and excellent capacitance retention(86%)after 15,000 cycles.

关键词： Electrochemistry Hydrothermal synthesis Nanowires Supercapacitor Transition metal oxides

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Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers 4th

Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical...

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4th International Conference on Telecommunications and Communication Engineering, ICTCE 2020

作者： Liu, Cheng Wu, Huizhen School of Microelectronics Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai200072 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Department of Physics Zhejiang University Zhejiang Hangzhou310027 China

ISBN: (纸本)9789811656910

1.3μm wafer-bonded vertical-cavity surface-emitting lasers are fabricated, which employ lateral etched p+-InAlAs/n+-InP tunnel junctions as confinement apertures. The VCSEL with a 5μm-diameter aperture exhibits CW operation with threshold current of 0.55 mA, maximum operation temperature up to 82 °C and single-transverse mode emission. The relationship between temperature-dependent characteristics and aperture sizes are discussed. The lateral etched p+-InAlAs/n+-InP tunnel junction aperture is attractive as confinement for high performance wafer-bonded long wavelength VCSELs. © 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Surface emitting lasers

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Round-Trip Sensitivity-Bandwidth Optimization and Characterization of High-Frequency PMUTs

Round-Trip Sensitivity-Bandwidth Optimization and Characteri...

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： Leming He Ning Lv Weijiang Xu Yan Wang Junyan Ren State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China UMR 8520-IEMN- Institut d’Electronique de Microélectronique et de Nanotechnologie Univ. Polytechnique Hauts-de-France CNRS Univ. Lille Valenciennes France

Piezoelectric micromachined ultrasonic transducers (PMUTs) are fabricated with Micro-Electro-Mechanical systems (MEMS) processes. They have advantages such as high uniformity and density, high flexibility in array configuration, and compatibility with integrated circuits. However, PMUTs generally have bottleneck issues with round-trip sensitivity, which restrict the improvement of acoustical imaging resolution. In this work, a round-trip modeling and optimization method is proposed to better analyze the round-trip sensitivity and solve the round-trip bottleneck problem of the PMUTs. Besides, the COMSOL livelinked with MATLAB to greatly simplify the calculation complexity is used to eliminate the influence of geometric parameters on center frequency variations and sweep several radii and thickness parameters.

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