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European Conference on Solid-state Circuits (ESSCIRC)

作者： Renze Gan Liangjian Lyu C.-J. Richard Shi State Key Laboratory of ASIC and System Fudan University Shanghai China School of Communication and Electronic Engineering East China Normal University Shanghai China Department of Electrical and Computer Engineering University of Washington Seattle WA USA

This paper presents a high noise efficiency readout circuit for multi-channel bio-signal acquisition. The prototype is implemented in a 65 nm CMOS LP process, which achieves a power consumption of 2.06 $\mu$W/channel, a noise efficiency factor (NEF) of1.48, a common-mode rejection ratio (CMRR) of 105 dB at 50 Hz, and a crosstalk of -65dB by employing these new techniques, including 1) the use of single-ended amplifiers as the unit of low noise amplifier (LNA) for lower NEF, 2) single-end chopping techniques for single-ended amplifiers for suppressing low-frequency noise and offset, 3) digital-assisted DC servo loop (DDSL) for fast settling.

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Improved Bundle Adjustment Based on ADMM 6th

Improved Bundle Adjustment Based on ADMM

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6th International Conference on Life system Modeling and Simulation, LSMS 2020, and 6th International Conference on Intelligent Computing for Sustainable Energy and Environment, ICSEE 2020

作者： Ma, Ruijie Jiang, Xin Liu, Jingjing Wang, Mingyu Li, Wenhong You, Ting State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China Key Laboratory of Air-driven Equipment Technology of Zhejiang Province Quzhou University Quzhou China

ISBN: (纸本)9789813363779

Bundle adjustment plays an significant role in SLAM (simultaneous localization and mapping), which is utilized in both front-end visual odometry and global back-end optimization. In many SLAM systems, bundle adjustment is employed to estimate the location of 3D landmarks and 6 DOF camera pose. However, as the dimension of the optimization variable increases, bundle adjustment consumes more and more time in SLAM, mainly in the iterative process. In this paper, an improved algorithm for this large scale bundle adjustment problem has been proposed. Firstly, according to the pose consensus, the classic algorithm ADMM (alternating direction method of multipliers) is introduced into the bundle adjustment problem. Secondly, for the non-convex optimization problem, the sub problem optimization method is introduced, and convergence and stopping criteria of the algorithm are discussed. Finally, the semi-dense direct method visual odometry for verification is implemented, and the experiments prove that the improved bundle adjustment algorithm has a speed advantage and can be applied to BAL (bundle adjustment in the large) problem. © 2020, Springer Nature Singapore Pte Ltd.

关键词： Iterative methods

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Capturing long-range interaction with reciprocal space neural network

arXiv

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arXiv 2022年

作者： Yu, Hongyu Hong, Liangliang Chen, Shiyou Gong, Xingao Xiang, Hongjun Institute of Computational Physical Sciences Department of Physics Fudan University Shanghai200433 China Shanghai Qi Zhi Institute Shanghai200030 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China

Machine Learning (ML) interatomic models and potentials have been widely employed in simulations of materials. Long-range interactions often dominate in some ionic systems whose dynamics behavior is significantly influenced. However, the long-range effect such as Coulomb and Van der Wales potential is not considered in most ML interatomic potentials. To address this issue, we put forward a method that can take long-range effects into account for most ML local interatomic models with the reciprocal space neural network. The structure information in real space is firstly transformed into reciprocal space and then encoded into a reciprocal space potential or a global descriptor with full atomic interactions. The reciprocal space potential and descriptor keep full invariance of Euclidean symmetry and choice of the cell. Benefiting from the reciprocal-space information, ML interatomic models can be extended to describe the long-range potential including not only Coulomb but any other long-range interaction. A model NaCl system considering Coulomb interaction and the GaxNy system with defects are applied to illustrate the advantage of our approach. At the same time, our approach helps to improve the prediction accuracy of some global properties such as the band gap where the full atomic interaction beyond local atomic environments plays a very important role. In summary, our work has expanded the ability of current ML interatomic models and potentials when dealing with the long-range effect, hence paving a new way for accurate prediction of global properties and large-scale dynamic simulations of systems with defects. © 2022, CC BY.

关键词： Defects

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Asynchronous Batch Constrained Multi-Objective Bayesian Optimization for Analog Circuit Sizing

Asynchronous Batch Constrained Multi-Objective Bayesian Opti...

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Asia and South Pacific Design Automation Conference

作者： Xuyang Zhao Zhaori Bi Changhao Yan Fan Yang Ye Lu Dian Zhou Xuan Zeng State Key Laboratory of Integrated Chips & System Fudan University China School of Microelectronics Fudan University China School of Information Science and Technology Fudan University China Department of Electrical Engineering University of Texas at Dallas U.S.A

For analog circuit sizing, constrained multi-objective optimization is an important and practical problem. With the popularity of multi-core machines and cloud computing, parallel/batch computing can significantly improve the efficiency of optimization algorithms. In this paper, we propose an Asynchronous Batch Constrained Multi-Objective Bayesian Optimization algorithm (ABCMOBO). Since the performances below the specifications are worthless, we adopt a dynamic reference point selection on the expected hypervolume improvement acquisition function for constraint handling. To save the time of waiting for all the simulations in the same batch to complete, ABCMOBO asynchronously evaluates the next candidate point if there is an idle worker. The experimental results quantitatively demonstrate that our proposed algorithms can reach 3.49 ~ $8.18 \times$ speed-up with comparable optimization results compared to the state-of-the-art asynchronous/synchronous batch multi-objective optimization methods.

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Dual Active Layer Mg-Doped Inzno Thin-Film Transistors with Ultra-Low Indium Doping

SSRN

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SSRN 2022年

作者： Hu, Chunfeng Zou, Zhongfei Wang, Mingxiang Qu, Xinping Co. Ltd Suzhou215301 China The School of Electronic and Information Engineering Soochow University Suzhou215006 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China

Dual active layer (DAL) Mg-doped InZnO thin film transistors (TFTs) are fabricated with ultralow usage of the rare metal In. Optimized DAL MIZO TFTs are obtained by adjusting In-doping, Mg content, and the thickness of two active layers. Compared with conventional single active layer TFTs, the DAL MIZO TFTs showed improved performance in terms of carrier mobility, threshold voltage (Vth), ON-state current (ION), and leakage current (IOFF). The front channel near the gate oxide has a lower Mg-doping and a higher In-doping compared with that of back channel, providing a high carrier concentration (ne) to increase ION . The back channel has a higher Mg-doping and a lower In-doping, providing a low ne to suppress IOFF. Furthermore, the heterojunction potential barrier formed between the two channel layers also helps to suppress the I OFF of the DAL TFTs. © 2022, The Authors. All rights reserved.

关键词： Thin film transistors

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A novel contact engineering method for transistors based on two-dimensional materials

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Journal of Materials Science & Technology 2021年第10期69卷 15-19页

作者： Yaochen Sheng LuFang Zhang Feng Li Xinyu Chen Zhijian Xie Haiyan Nan Zihan Xu David Wei Zhan Jianhao Chen Yong Pu Shaoqing Xiao Wenzhong Bao State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Engineering Research Center of IoT Technology Applications(Ministry of Education) Department of Electronic EngineeringJiangnan UniversityWuxi 214122China International Center for Quantum Materials School of PhysicsPeking UniversityBeijing 100871China New Energy Technology Engineering Laboratory of Jiangsu Province&School of Science Nanjing University of Posts and TelecommunicationsNanjing 210023China Six Carbon Tech ShenzhenShenzhen 518106China

Contact engineering is of critical importance for two-dimensional(2D)transition metal dichalcogenide(TMD)-based ***,there are only a few solutions to overcome this obstacle because of the complexity of the TMD-contact *** this work,we propose a novel method using a soft plasma treatment followed by the seamless deposition of a metal electrode to reduce the contact resistance of MoS_(2)field effect transistors(FETs).The treated FETs exhibit three times higher mobility than the control FETs without plasma *** soft plasma treatment can remove the facial sulfur atoms and expose the middle Mo atoms so that they come into direct contact with the metal electrode,thus greatly improving the contact ***-principles calculation is also performed to support the experimental *** potentially scalable strategy can be extended to the whole family of TMD based FETs to provide a possible route of device processsing technology for 2D device application.

关键词： Electrical contact resistance MoS_(2) Plasma

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Biodegradable germanium electronics for integrated biosensing of physiological signals

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npj Flexible Electronics 2022年第1期6卷 632-641页

作者： Haonan Zhao Zhongying Xue Xiaozhong Wu Zhihuan Wei Qiuyu Guo Miao Xu Chunyan Qu Chunyu You Yongfeng Mei Miao Zhang Zengfeng Di Qinglei Guo School of Microelectronics Center of NanoelectronicsShandong University250100 JinanP.R.China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences200050 ShanghaiP.R.China Department of Hematology Qilu HospitalCheeloo College of MedicineShandong University250100 JinanP.R.China Department of Materials Science International Institute for Intelligent Nanorobots and NanosystemsFudan University200433 ShanghaiP.R.China State Key Laboratory of ASIC and Systems Fudan University200433 ShanghaiP.R.China Institute of Optoelectronics Yiwu Research InstituteFudan University200433 ShanghaiP.R.China

Transient electronics that can disappear or degrade via physical disintegration or chemical reaction over a pre-defined operational period provide essential for their applications in implantable bioelectronics due to the complete elimination of the second surgical ***,the dissolution of commonly utilized bioresorbable materials often accompanies hydrogen production,which may cause potential or irreparable harm to the human *** paper introduces germanium nanomembrane-based bioresorbable electronic sensors,where the chemical dissolution of all utilized materials in biofluidic theoretically have no gaseous *** particular,the superior electronic transport of germanium enables the demonstrated bioresorbable electronic sensors to successfully distinguish the crosstalk of different physiological signals,such as temperature and strain,suggesting the significant prospect for the construction of dual or multi-parameter *** studies reveal the gauge factor and temperature coefficient of resistance comparable to otherwise similar devices with gaseous products during their dissolution.

关键词： companies utilized otherwise

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Ald-Fabricated Two-Dimensional MoO3-WO3 Nanohybrid Thin-Film Electrode for Ultrasensitive and Interference-Free Detection of Dopamine

SSRN

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SSRN 2023年

作者： Lopa, Nasrin Siraj Akbari, Mohammad Karbalaei Lu, Hong Liang Zhuiykov, Serge Ghent University Global Campus Incheon21985 Korea Republic of Department of Solid-Sate Science Faculty of Science Ghent University Krijgslaan 281/S1 GhentB-9000 Belgium State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai200433 China

Atomically thin 2D semiconductors and their hybrid electrodes show great promise in the advancement of neural sensors for detecting neurotransmitters either through implantation on the brain's surface or by direct detection in biological fluids. This research demonstrated the fabrication of a sub-10 nm thick 2D MoO3-WO3 heterostructure electrode via ALD for the first time to detect dopamine (DA). The developed thin-film with uniform surface morphology possessed monoclinic and orthorhombic crystal structures of WO3 and MoO3, respectively, with the existence of oxygen vacancies and their sub-stoichiometric phases. The MoO3-WO3 sensor showed excellent catalytic activity for the interference-free detection of DA by suppressing the redox activity of common interferences, ascorbic acid (AA) and uric acid (UA). The ultra-sensitivity of DA oxidation can be ascribed to the effective electrostatic interaction and chemical coordination between the positively charged DA (at pH 7.0) with the MoO3-WO3. In contrast, the predominant electrostatic repulsive force between the negatively charged AA and UA (at pH 7.0) with the MoO3-WO3 suppressed their electrochemical responses. The sensor showed a nanomolar detection limit (20 nM) and wide linear range for DA detection, which is highly appropriate for its determination in biological samples. Additionally, the sensor demonstrated excellent electrochemical stability, high reproducibility, and good recoveries of DA determination in diluted human serum samples. © 2023, The Authors. All rights reserved.

关键词： Ascorbic acid

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Fea Study on the Tsv Copper Filling Influenced by the Additives and Electroplating Process

SSRN

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SSRN 2023年

作者： Zhao, Zifeng Liu, Ziyu Chen, Lin Sun, Qingqing Liu, Hongye Sun, Yabin School of Optical-Electrical and Computer Engineering University of Shanghai for Science and Technology Shanghai200093 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China Jiashan Fudan Institute Zhejiang Province Jiaxing314100 China Department of Electrical Engineering East China Normal University Shanghai200241 China

Abstract Through-Silicon Via (TSV) is a key technology of three-dimensional (3D) integration. However, it is easy to have voids in the Cu filling process of TSV. Additives and optimized filling process are used to solve this problem. However, the comprehensive analysis of these affecting parameter needs many experiments and cost much time. Thus, the finite element analysis (FEA) for the mass transferring of electroplating is carried out by the COMSOL software in the work. The filling processes with different inhibitor concentrations are first studied and the most suitable density of 64mol/m2 is obtained. However, high inhibitor concentration will lead to much lower plating speed. Thus, the effect of filling process such as current density and plating bath flow velocity on the voids are investigated under the optimized concentrations above. The best filling quality is obtained at the current density of 1.4 ASD and the bath stirring velocity of 0.4 m/s. The underlying growth mechanism of these influencing factors are also analyzed and revealed. © 2023, The Authors. All rights reserved.

关键词： Copper

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A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm2 using Sneaking Current Suppression and Compensation Techniques

A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm2 using Sneak...

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2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020

作者： Yang, Jianguo Xue, Xiaoyong Xu, Xiaoxin Lv, Hangbing Zhang, Feng Zeng, Xiaoyang Chang, Meng-Fan Liu, Ming Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences China State Key Laboratory of Asic and System Fudan University China University of Chinese Academy of Sciences China Department of Electrical Engineering National Tsing Hua University Taiwan

ISBN: (纸本)9781728199429

For the first time, 1T2R RRAM cell using PMOS selector is proposed and demonstrated with improved reset voltage and high density for embedded NVM. Hierarchical bit line and 3-state cell storage confine the associated sneaking current locally within a small zone and further suppress it by >90%. Self-adaptive write driver with current limiter and sneaking current compensator realizes power saving and accurate current compliance for set. To suit PMOS selector, reverse read using current sensing with dummy reference brings fast and reliable read. A 1.5Mb RRAM test chip in 28nm improved the record storage density by 40% to 14.8 Mb/mm2. Reliable read is performed at low VDD of 0.6V(-40, 125)°C. © 2020 IEEE.

关键词： RRAM

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