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Industry-Level Electrocatalytic CO2to CO Enabled by 2D Mesoporous Ni Single Atom Catalysts

Angewandte Chemie 2024年第5期137卷

作者： Yao Ma Taishi Xiao Kerun Zhu Dr. Wei Zhang Ziqing Yin Prof. Angang Dong Prof. Zhengzong Sun Prof. Dongyuan Zhao Prof. Wei Li Department of Chemistry Laboratory of Advanced Materials Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials State Key Laboratory of Molecular Engineering of Polymers and iChEM Fudan University Shanghai 200433 China School of Microelectronics and State Key Laboratory of ASIC and System Fudan University Shanghai 200433 China

Electrocatalytic CO 2 reduction reaction (eCO 2 RR) has captivated widespread attentions, yet achieving the requisite efficiency, selectivity and stability for industrial applications poses a persistent challenge. Here, we report the synthesis of 2D mesoporous Ni single atom catalysts in N-doped carbon framework via a bottom-up interfacial assembly strategy. The 2D mesoporous Ni−N−C catalyst showcases an ultrathin thickness (~6.7 nm) with well-distributed 5 to 40 nm-width mesopores in plane and a high surface area. As a result, the Ni single atom sites with a high density (~6.0 wt %) are almost completely exposed and can be accessible, and the mass transfer can be greatly promoted even at high current densities. Thus, a high current density of 446 mA cm −2 with >95 % CO selectivity in a flow cell can be obtained. Concurrently, the catalyst demonstrates an impressive stability, maintaining a 50-hours continuous electrolysis in the membrane electrode assembly test and achieving an energy efficiency of 42 %. Finite element analysis reveals that the 2D mesoporous design enhances CO 2 diffusion, ensuring efficient adsorption and swift CO desorption at high current densities. Our study paves a way for the fabrication of 2D mesoporous single atom catalysts with nearly 100 % accessibility and expedited mass transport.

关键词： Ni−N−C Mesoporous Mass Transfer Ultrathin Nanosheets CO2 Electroreduction

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Ultrafast Switching in Integrated Photonics using Antimony

Ultrafast Switching in Integrated Photonics using Antimony

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Conference on Lasers and Electro-Optics (CLEO)

作者： Samarth Aggarwal Tara Milne Nikolaos Farmakidis Johannes Feldmann Xuan Li Yu Shu Zengguang Cheng Martin Salinga Wolfram H P Pernice Harish Bhaskaran Department of Materials University of Oxford Oxford UK State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China Institut für Materialphysik Westfälische Wilhelms-Universität Münster Münster Germany Department of Physics University of Münster Münster Germany

In this work, we demonstrate the use of Antimony as a reversible memory element in integrated photonics. We show antimony can be used as a multilevel memory with an ultrafast speed of operations.

ISBN: (数字)9781957171050

ISBN: (纸本)9781665466660

In this work, we demonstrate the use of Antimony as a reversible memory element in integrated photonics. We show antimony can be used as a multilevel memory with an ultrafast speed of operations.

关键词： Electric potential Metals Switches Antimony Laser applications Electo-optic effects Photonics

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Machine-Learning Modeling of Elemental Ferroelectric Bismuth Monolayer

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Physical Review Letters 2024年第26期133卷 266103-266103页

作者： Yanxing Zhang Xinjian Ouyang Dangqi Fang Shaojie Hu Laijun Liu Dawei Wang School of Physics Henan Normal University Xinxiang 453007 China School of Microelectronics & State Key Laboratory for Mechanical Behavior of Materials Xi’an Jiaotong University Xi’an 710049 China Key Lab of Micro-Nano Electronics and System Integration of Xi’an City Xi’an Jiaotong University Xi’an 710049 China MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter School of Physics Xi’an Jiaotong University Xi’an 710049 China Department of Physics Kyushu University 744 Motooka Fukuoka 812-8581 Japan Key Laboratory of Nonferrous Materials and New Processing Technology Ministry of Education College of Materials Science and Engineering Guilin University of Technology Guilin 541004 China

The bismuth monolayer has recently been experimentally identified as a novel platform for the investigation of two-dimensional single-element ferroelectric system. Here, we model the potential energy surface of a bismuth monolayer by employing a message-passing neural network and achieve an error smaller than 1.2 meV per atom. Empowered by the high accuracy and fast prediction of the machine learning model, we have embarked on in-depth and large-scale atomistic simulations. These explorations are tailored to understand the temperature-dependent phase transitions, with an emphasis on the difference between free-standing monolayers and those constrained by a substrate. Furthermore, with the large system used in the simulations, we are also able to observe ferroelectric domains within these systems and shed light on their intrinsic lattice thermal conductivity.

关键词： Ferroelectricity

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A Calibration Scheme for Nonlinearity of the SAR-Pipelined ADCs Based on a Shared Neural Network

A Calibration Scheme for Nonlinearity of the SAR-Pipelined A...

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IEEE Asia-Pacific Conference on Circuits and systems

作者： Min Chen Yimin Wu Jingchao Lan Fan Ye Chixiao Chen Junyan Ren State-key Laboratory of ASIC and System School of Microelectronics Fudan University China

ISBN: (数字)9781728193960

ISBN: (纸本)9781728193977

This paper proposes a calibration scheme that compensates the nonlinearity of the SAR-Pipelined analog-to-digital converters(ADCs) based on a shared neural network. Due to the fitting ability of the nonlinear functions, the neural network based ADC calibration scheme requires no prior knowledge. Moreover, the introduction of the sharing mechanism not only guarantees the calibration effect for nonlinearity, but also simplifies the hardware complexity, compared to a calibrator with independent neural networks. We validate the scheme with a 14-bit 60MHz SAR-Pipelined ADC fabricated in 28 nm. The measurement results indicate that the ADCs achieve an SFDR of 93.3 dB and an ENOB of 10.63 b, with the assistance of the proposed calibrator. In the meantime, the memory is reduced by 46.7% due to the decrease of neural network parameters, with a sharing rate (ratio of shared quantity to total) of 93.75%.

关键词： Calibration Biological neural networks Hardware Neurons Complexity theory Linearity Circuits and systems

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Directional Carrier Transport in Micrometer-Thick Gallium Oxide Films for High-Performance Deep-Ultraviolet Photodetection

arXiv

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arXiv 2022年

作者： Zhang, Wenrui Wang, Wei Zhang, Jinfu Zhang, Tan Chen, Li Wang, Liu Zhang, Yu Cao, Yanwei Ji, Li Ye, Jichun Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo315201 China Yongjiang Laboratory Ningbo315201 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China

Incorporating emerging ultrawide bandgap semiconductors with a metal-semiconductor-metal (MSM) architecture is highly desired for deep-ultraviolet (DUV) photodetection. However, synthesis-induced defects in semiconductors complicate the rational design of MSM DUV photodetectors due to their dual role as carrier donors and trap centers, leading to a commonly observed trade-off between responsivity and response time. Here, we demonstrate a simultaneous improvement of these two parameters in Ε-Ga2O3 MSM photodetectors by establishing a low-defect diffusion barrier for directional carrier transport. Specifically, using a micrometer thickness far exceeding its effective light absorption depth, the Ε-Ga2O3 MSM photodetector achieves over 18-fold enhancement of responsivity and simultaneous reduction of the response time, which exhibits a state-of-the-art photo-to-dark current ratio near 108, a superior responsivity of >1300 A/W, an ultrahigh detectivity of >1016 Jones and a decay time of 123 ms. Combined depth-profile spectroscopic and microscopic analysis reveals the existence of a broad defective region near the lattice-mismatched interface followed by a more defect-free dark region, while the latter one serves as a diffusion barrier to assist frontward carrier transport for substantially enhancing the photodetector performance. This work reveals the critical role of the semiconductor defect profile in tuning carrier transport for fabricating high-performance MSM DUV photodetectors. Copyright © 2022, The Authors. All rights reserved.

关键词： Energy gap

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Memristive switching in the surface of a charge-density-wave topological semimetal

arXiv

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arXiv 2024年

作者： Ma, Jianwen Meng, Xianghao Zhang, Binhua Wang, Yuxiang Mou, Yicheng Lin, Wenting Dai, Yannan Chen, Luqiu Wang, Haonan Wu, Haoqi Gu, Jiaming Wang, Jiayu Du, Yuhan Liu, Chunsen Shi, Wu Yang, Zhenzhong Tian, Bobo Miao, Lin Zhou, Peng Duan, Chun-Gang Xu, Changsong Yuan, Xiang Zhang, Cheng State Key Laboratory of Surface Physics Institute for Nanoelectronic Devices and Quantum Computing Fudan University Shanghai200433 China State Key Laboratory of Precision Spectroscopy East China Normal University Shanghai200241 China Institute of Computational Physical Sciences State Key Laboratory of Surface Physics Department of Physics Fudan University Shanghai200433 China Shanghai Qi Zhi Institute Shanghai200030 China School of Physics Southeast University Nanjing211189 China Department of Electronics East China Normal University Shanghai200241 China Shanghai Center of Brain-inspired Intelligent Materials and Devices East China Normal University Shanghai200241 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China Frontier Institute of Chip and System Fudan University Shanghai200433 China Zhangjiang Fudan International Innovation Center Fudan University Shanghai201210 China School of Physics and Electronic Science East China Normal University Shanghai200241 China

Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin–charge conversion, and topological quantum computation. Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states, which could greatly facilitate topological electronic research. However, ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free carriers. In this study, we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal (TaSe4)2I. We find that the surface state of (TaSe4)2I presents out-of-plane ferroelectric polarization due to surface reconstruction. With the combination of ferroelectric surface and charge-density-wave-gapped bulk states, an electric-switchable barrier height can be achieved in (TaSe4)2I–metal contact. By employing a multi-terminal-grounding design, we manage to construct a prototype ferroelectric memristor based on (TaSe4)2I with on/off ratio up to 103, endurance over 103 cycles, and good retention characteristics. The origin of the ferroelectric surface state is further investigated by first-principles calculations, which reveals an interplay between ferroelectricity and band topology. The emergence of ferroelectricity in (TaSe4)2I not only demonstrates it as a rare but essential case of ferroelectric topological materials, but also opens new routes towards the implementation of topological materials in functional electronic devices. © 2024, CC BY.

关键词： Ferroelectricity

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Serpentine Si nanowire biosensor for digital sensing of single virus 21

Serpentine Si nanowire biosensor for digital sensing of sing...

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21st International Conference on Miniaturized systems for Chemistry and Life Sciences, MicroTAS 2017

作者： Zang, Pengyuan Liang, Yuchen Wang, Honglei Tao, Jun Zeng, Xuan Zhou, Dian Hu, Walter Dept. of ECE University of Texas at Dallas RichardsonTX75080 United States ASIC and System State-Key Lab Microelectronics Department Fudan University Shanghai200433 China

ISBN: (纸本)9780692941836

We report a digital biosensing method by counting the individual binding events of single analyte using a Si nanowire (NW) biological field effect transistor (BioFET). Because the detection is no longer based on the amplitude of the sensor output, it is immune to the environmental noise, and the detection limit is less bound by the binding affinity. A single 15 nm wide NW FET with a unique serpentine geometry was fabricated by e-beam lithography and CMOS processing technologies. Individual binding events of influenza virus were observed with the serpentine NW FET, and the binding frequency monotonically increased with the virus concentration from 0.15 fM to 15 fM. Histogram of the conductance showed a distinct virus binding state increasing from 900/µL to 9,000/µL, demonstrating the feasibility of the digital biosensing concept with serpentine NW FETs. © 17CBMS-0001.

关键词： Biosensors

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Disjoint-Path and Golden-Pin Based Irregular PCB Routing with Complex Constraints 23

Disjoint-Path and Golden-Pin Based Irregular PCB Routing wit...

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Proceedings of the 60th Annual ACM/IEEE Design Automation Conference

作者： Qinghai Liu Qinfei Tang Jiarui Chen Chuandong Chen Ziran Zhu Huan He Jianli Chen Yao-Wen Chang Center for Discrete Mathematics Fuzhou University Fuzhou China and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou China Center for Discrete Mathematics Fuzhou University Fuzhou China College of Computer and Date Science Fuzhou University Fuzhou China Department of Microelectronics Fuzhou University Fuzhou China Department of Microelectronics Southeast University Nanjing China Hangzhou Huawei Enterprises Telecommunication Technologies Co. Ltd Hangzhou China State Key Lab of ASIC & System Fudan University Shanghai China Graduate Institute of Electronics Engineering National Taiwan University Taipei Taiwan and Department of Electrical Engineering National Taiwan University Taipei Taiwan

ISBN: (纸本)9798350323481

PCB routing becomes time-consuming as the complexity of PCB design increases. Unlike traditional schemes that treat the two essential PCB routing processes separately, namely, escape and bus routing, we consider the continuity between them and present a golden-pin-based routing scheme to find the desired solution with angle and topology constraints. Further, conventional rip-up and reroute methods are often ineffective and inefficient for congestion alleviation and routability optimization. We construct a component graph by modeling components as vertices and applying the minimum weight vertex covering method to improve the routability. A self-adaptable ordering method is presented for escape routing to arrange the pin order on the component boundary, guaranteeing successful bus routing. In addition, escape routing is performed based on a disjoint path method. We construct a dynamic Hanan grid in bus routing and utilize a novel congestion adjustment technique to improve solution quality. Compared with FreeRouting and Allegro, the experiment results show that our algorithm achieves high routability and a significant 90% runtime reduction.

关键词： escape routing

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A study on ionic gated MoS2 phototransistors

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Science China(Information Sciences) 2019年第12期62卷 133-140页

作者： Binmin WU Xudong WANG Hongwei TANG Tie LIN Hong SHEN Weida HU Xiangjian MENG Wenzhong BAO Jianlu WANG Junhao CHU School of Physical Science and Technology Shanghai Tech University State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences University of Chinese Academy of Sciences State Key Laboratory of ASIC and System School of Microelectronics Fudan University

Molybdenum disulfide（MoS2） holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an Mo S2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2and source/drain electrodes can be widely regulated from 11 to 179 me V. The MoS2phototransistor exhibits excellent responsivity of 2.68 × 10～4 A/W and detectivity of 9.6 × 1010 Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors.

关键词： MoS2 phototransistor electrolyte-gel gating Schottky barrier electric double layer two-dimensional materials

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Effectiveness Evaluation for Clinical Depression Detection Using Deep Learning Based Synthetic House-Tree-Person Test

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IEEE Journal of Biomedical and Health Informatics 2025年 PP卷 PP页

作者： Chen, Zhuolong Yin, Xiaoqing Yang, Fan Li, Xiaofan Zhao, Zixuan Li, Xueying Liu, Jianghu Zhao, Yubin Xu, Cheng-Zhong Zheng, Fangfang Lin, Yong Sun Yat-Sen University School of Microelectronics Science and Technology 0000 China The Fifth Affiliated Hospital of Sun Yat-Sen University Department of Psychiatry 0000 China The Fifth Affiliated Hospital of Sun Yat-Sen University Pediatrics Department 0000 China Jinan University School of Intelligent System Science and Engineering 0000 China University of Macau State Key Laboratory of IoTSC Department of Computer and Information Science Macau0000 China

Depression is one of the most common mood disorders and the number of patients increases significantly in recent years. Due to the lack of biomarkers, conversation between patients and psychiatrists is still the main clinical diagnostic method which is easily influenced by subjectivity of both patients and psychiatrists. Synthetic House-tree-person test (S-HTP), a convenient and efficient mental assessment tool, minimizes subjective influences from patients, while its effectiveness is limited by the professional ability of analyst. Here we introduce a deep learning model DeHTP, a flexible and convenient depression detection method based on S-HTP without interaction between people. Experimental results demonstrate that DeHTP achieves 0.963 AUC and 0.9 accuracy, and outperforms the conventional manual analysis of S-HTP, which is conducted on the guideline of 50 conclusions from previous study related to depression. In addition, it reveals 22 depression-correlated drawing features aligned with conclusions above from the perspective of our proposed model. Leveraging the advantages of deep learning and S-HTP, this approach has the potential for widespread promotion and adoption as the available tool for daily self-mental monitoring, as well as the promising auxiliary diagnostic method in clinical. © 2013 IEEE.

关键词： Contrastive Learning

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