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Ultrasonic backscatter characterization of cancellous bone using a general Nakagami statistical model

Chinese Physics B 2019年第2期28卷 313-320页

作者： Chengcheng Liu Rui Dong Boyi Li Ying Li Feng Xu Dean Ta Weiqi Wang Institute of Acoustics School of Physics Science and EngineeringTongji University Department of Electronic Engineering Fudan University State Key Laboratory of ASIC and System Fudan University

The goal of this study is to analyze the statistics of the backscatter signal from bovine cancellous bone using a Nakagami model and to evaluate the feasibility of Nakagami-model parameters for cancellous bone characterization. Ultrasonic backscatter measurements were performed on 24 bovine cancellous bone specimens in vitro and the backscatter signals were compensated for the frequency-dependent attenuation prior to the envelope detection. The statistics of the backscatter envelope were modeled using the Nakagami distribution. Our results reveal that the backscatter envelope mainly followed pre-Rayleigh distributions, and the deviations of the backscatter envelope from Rayleigh distribution decreased with increasing bone density. The Nakagami shape parameter(i.e., m) was significantly correlated with bone densities(R = 0.78–0.81, p < 0.001) and trabecular microstructures(|R| = 0.46–0.78, p < 0.05). The scale parameter(i.e.,?) and signal-to-noise ratio(SNR) also yielded significant correlations with bone density and structural features. Multiple linear regressions showed that bone volume fraction(BV/TV) was the main predictor of the Nakagami parameters,and microstructure produced significantly independent contribution to the prediction of Nakagami distribution parameters,explaining an additional 10.2% of the variance at most. The in vitro study showed that statistical parameters derived with Nakagami model might be useful for cancellous bone characterization, and statistical analysis has potential for ultrasonic backscatter bone evaluation.

关键词： ultrasonic backscatter cancellous bone statistical analysis Nakagami model

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Cogging Force Identification Based on Self-Adaptive Hybrid Self-Learning TLBO Trained RBF Neural Network for Linear Motors 13

Cogging Force Identification Based on Self-Adaptive Hybrid S...

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13th International Symposium on Linear Drives for Industry Applications, LDIA 2021

作者： Fu, Xuewei Ding, Chenyang Zanchetta, Pericle Yang, Xiaofeng Tang, Mi Liu, Yang State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China Academy for Engineering and Technology Fudan University Shanghai China Department of Electrical and Electronic Engineering University of Nottingham Nottingham United Kingdom Department of Electrical University of Pavia Pavia Italy Power Electronics Machine and Control Group University of Nottingham Nottingham United Kingdom Center of Ultra-Precision Optoelectronic Instrument Engineering Harbin Institute of Technology Harbin China

ISBN: (纸本)9781728172101

The cogging force arising due to the strong attraction forces between the iron core and the permanent magnets, is a common inherent property of the linear motors, which significantly affects the control performance. Therefore, significant research efforts have been devoted to the compensation of the cogging force. In this paper, an identification approach based on the radial basis function neural network (RBFNN) is proposed to obtain an accurate model of the cogging force. A self-adaptive hybrid self-learning teaching-learning-based optimization (SHSLTLBO) method is utilized to train the neural network. Finally, the experimental results confirm the effectiveness and the superiority of the proposed cogging force identification method. © 2021 IEEE

关键词： Radial basis function networks

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High Performance Solar-Blind Photodetectors Based on Plasma-Enhanced Atomic Layer Deposition of Thin Ga2o3 Films Annealed Under Different Atmosphere

SSRN

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SSRN 2022年

作者： Chen, Yu-Chang Chen, Ding-Bo Zeng, Guang Li, Xiao-Xi Li, Yu-Chun Zhao, Xue-Feng Chen, Na Wang, Ting-Yun Zhang, David Wei Lu, Hong-Liang State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai200433 China Yiwu Research Institute of Fudan University Chengbei Road Zhejiang Yiwu City322000 China Key Laboratory of Specialty Fiber Optics and Optical Access Networks Shanghai Institute Communication and Data Science Shanghai University Shanghai200444 China

Solar-blind photodetectors (SBPDs) have attracted great interests for the potential applications as missile guidance, biological detection, and ultra-violet imaging. Despite the large number of Ga 2 O 3 -SBPDs reported, most of them with thick light absorption layers fail to achieve both high responsivity and fast response time simultaneously. In this work, high-performance SBPDs with 20 nm thick Ga 2 O 3 film were demonstrated with an extremely low dark current at 0.76 pA, a great photo-dark current ratio of 10 6 , a high responsivity of 6.18 A/W, and an ultra-fast decay time ~45 ms. Moreover, the films annealed in nitrogen exhibit a more pronounced amorphous-to-polycrystalline transition, while the samples after oxygen annealing show a lower recrystallization and less oxygen vacancy concentration. This finding opens up the pathways and provide an alternative strategy towards developing the high photoresponse performance required for future applications using solar-blind detection. © 2022, The Authors. All rights reserved.

关键词： Atomic layer deposition

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Towards efficient deep neural network training by FPGA-based batch-level parallelism

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Journal of Semiconductors 2020年第2期41卷 51-62页

作者： Cheng Luo Man-Kit Sit Hongxiang Fan Shuanglong Liu Wayne Luk Ce Guo State Key Laboratory of ASIC and System Fudan UniversityShanghai 200050China Department of Computing Imperial College LondonLondonUnited Kingdom

Training deep neural networks(DNNs)requires a significant amount of time and resources to obtain acceptable results,which severely limits its deployment in resource-limited *** paper proposes DarkFPGA,a novel customizable framework to efficiently accelerate the entire DNN training on a single FPGA ***,we explore batch-level parallelism to enable efficient FPGA-based DNN ***,we devise a novel hardware architecture optimised by a batch-oriented data pattern and tiling techniques to effectively exploit ***,an analytical model is developed to determine the optimal design parameters for the DarkFPGA accelerator with respect to a specific network specification and FPGA resource *** results show that the accelerator is able to perform about 10 times faster than CPU training and about a third of the energy consumption than GPU training using 8-bit integers for training VGG-like networks on the CIFAR dataset for the Maxeler MAX5 platform.

关键词： deep neural network training FPGA batch-level parallelism

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A High Linearity TH circuit for 1GHz Pipeline ADC in 65nm CMOS 15

A High Linearity TH circuit for 1GHz Pipeline ADC in 65nm CM...

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15th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2020

作者： Wu, H.J. Zeng, Y.P. Xing, X.L. Lin, N. Li, Q. Fudan Microelectronics Co. Ltd Shanghai200433 China No.58 China Electronic Technology Group Corporation Wuxi214035 China State Key Laboratory of Asic and System Fudan University Shanghai200433 China

ISBN: (纸本)9781728162355

A 3.3/2.5V/1.2V high linearity track-And-hold (TH) circuit for 1GHz Pipeline analog to digital converter (ADC) in 65nm CMOS is implemented. It includes the two input buffer with source follower, bias and common mode voltage and generated part, input-impedance matching network and SPI part. Input-impedance matching network include a 50-O /100-O /200-O resistor controlled with SPI. The simulated results show that the SFDR and SNDR of the input buffer can get 89dB and 88dB, respectively. The power consumption is 158mW with typical 3.3V/2.5V/1.2V supply. © 2020 IEEE.

关键词： Pipelines

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Disjoint-Path and Golden-Pin Based Irregular PCB Routing with Complex Constraints

Disjoint-Path and Golden-Pin Based Irregular PCB Routing wit...

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Design Automation Conference

作者： Qinghai Liu Qinfei Tang Jiarui Chen Chuandong Chen Ziran Zhu Huan He Jianli Chen Yao-Wen Chang Center for Discrete Mathematics Fuzhou University Fuzhou China Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou China College of Computer and Date Science Fuzhou University Fuzhou China Department of Microelectronics Fuzhou University Fuzhou China Department of Microelectronics Southeast University Nanjing China Hangzhou Huawei Enterprises Telecommunication Technologies Co. Ltd Hangzhou China State Key Lab of ASIC & System Fudan University Shanghai China Graduate Institute of Electronics Engineering National Taiwan University Taipei Taiwan Department of Electrical Engineering National Taiwan University Taipei Taiwan

PCB routing becomes time-consuming as the complexity of PCB design increases. Unlike traditional schemes that treat the two essential PCB routing processes separately, namely, escape and bus routing, we consider the continuity between them and present a golden-pin-based routing scheme to find the desired solution with angle and topology constraints. Further, conventional rip-up and reroute methods are often ineffective and inefficient for congestion alleviation and routability optimization. We construct a component graph by modeling components as vertices and applying the minimum weight vertex covering method to improve the routability. A self-adaptable ordering method is presented for escape routing to arrange the pin order on the component boundary, guaranteeing successful bus routing. In addition, escape routing is performed based on a disjoint path method. We construct a dynamic Hanan grid in bus routing and utilize a novel congestion adjustment technique to improve solution quality. Compared with FreeRouting and Allegro, the experiment results show that our algorithm achieves high routability and a significant 90% runtime reduction.

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Tunable plasmons in large area WTe2 thin films

arXiv

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arXiv 2021年

作者： Wang, Chong Sun, Yangye Huang, Shenyang Xing, Qiaoxia Zhang, Guowei Song, Chaoyu Wang, Fanjie Xie, Yuangang Lei, Yuchen Sun, Zhengzong Yan, Hugen State Key Laboratory of Surface Physics Department of Physics Fudan University Shanghai200433 China Fudan University Shanghai200433 China School of Microelectronics State Key Laboratory of ASIC and System Fudan University Shanghai200433 China Institute of Flexible Electronics Northwestern Polytechnical University Xi’an710072 China

The observation of the electrically tunable and highly confined plasmons in graphene has stimulated the exploration of interesting properties of plasmons in other two dimensional materials. Recently, hyperbolic plasmon resonance modes are observed in exfoliated WTe2 films, a type-II Weyl semimetal with layered structure, providing a platform for the assembly of plasmons with hyperbolicity and exotic topological properties. However, the plasmon modes were observed in relatively thick and small-area films, which restrict the tunability and application for plasmons. Here, large-area (~ cm) WTe2 films with different thickness are grown by chemical vapor deposition method, in which plasmon resonance modes are observed in films with different thickness down to about 8 nm. Hybridization of plasmon and surface polar phonons of the substrate is revealed by mapping the plasmon dispersion. The plasmon frequency is demonstrated to be tunable by changing the temperature and film thickness. Our results facilitate the development of a tunable and scalable WTe2 plasmonic system for revealing topological properties and towards various applications in sensing, imaging and light modulation. © 2021, CC BY.

关键词： Chemical vapor deposition

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1d/2d/0d Mixed Dimensional Tio2/Zno/Ag Core-Shell Nanowires Forhigh Performance Uv-Vis Photoelectrochemical Photodetector

SSRN

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SSRN 2022年

作者： Jiang, Xishun Tao, Jia-Jia Zhang, Yongchun Zhang, Yangyi Shi, Yonghua School of Mechanical and Electronic Engineering Chuzhou University Chuzhou239000 China The 50th Research Institute of China Electronics Technology Group Corporation Shanghai200331 China State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai200433 China

The 1D/2D/0D mixed dimensional TiO 2 /ZnO/Ag core-shell nanowires (NWs) were prepared by combining hydrothermal process, magnetron sputtering, and photo-deposition approaches for UV-Vis light photoelectrochemical photodetector *** PEC photodetector based on TiO 2 /ZnO/Ag NWs exhibited excellent performance including high on/off ratio ( PDCR of 1.46×10 4 and 1.16×10 4 ), high responsivity ( R of 730 and 490 mA/W), large detectivity ( D* of 9.1×10 9 and 6.1×10 9 Jones), and fast response speed ( τ r / τ d of 1.10/0.91 and 1.52/0.61 s) under 40 mW/cm 2 illumination of 380 and 420 nm at bias of 1.5 V, respectively. The localized surface plasmon resonance (LSPR) of 0D Ag quantum dots (QDs) and unique type-II band alignment of 1D TiO 2 NWs/2D ZnO nanosheets (NSs) structure enhances the light absorption, the generation and separation of the photogenerated carriers, which lead to great enhancement of photodetector performance. Moreover, by introducing of 2D ZnO NSs and 0D Ag QDs also enhances the light intensity within the 1D TiO 2 NWs is also confirmed by light absorption tests and optical simulations. This work provides a feasible approach to fabricate mixed dimensional heterostructures for high performance optoelectronic device. © 2022, The Authors. All rights reserved.

关键词： Zinc oxide

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Anomalous Polarization-Switching Phenomena and Noteworthy Pyroelectricity in Ferroelectric Hf0.5zr0.5o2 Polycrystalline Films

SSRN

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SSRN 2023年

作者： Wang, Xudong Zhou, Yong Xiong, Ke Wu, Shuyu Tu, Luqi Chen, Yan Wu, Shuaiqin Zeng, Jinhua Zheng, Yuqing Gu, Shiqun Luo, Man Lin, Tie Shen, Hong Meng, Xiangjian Liu, Qi Chu, Junhao Wang, Jianlu State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Frontier Institute of Chip and System Fudan University Shanghai200433 China Shanghai Frontier Base of Intelligent Optoelectronics and Perception Institute of Optoelectronics Fudan University Shanghai200433 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Chinese Academy of Sciences Hangzhou330106 China BirenTech Shanghai201114 China Jiangsu Key Laboratory of ASIC Design School of Information Science and Technology Nantong University Jiangsu Nantong226019 China

Hafnia-based oxide thin films exhibit unconventional robust ferroelectricity at the nanoscale, paving the way for advancements in next-generation nanoelectronics. However, the stability and dynamics of ferroelectric polarization in hafnia-based oxides films, particularly at the nanoscale, warrant further exploration. In this study, we delve into the factors influencing the formation of the ferroelectric phase. Our findings illuminate that the confinement effect of the capped layer enhances the stabilization of the metastable orthorhombic phase, thereby bolstering its ferroelectricity and endurance. Furthermore, we identify an unprecedented polarization-switching behavior in HfO2-based ferroelectric films, characterized by a decrease in the remanent polarization and an increase in the coercive field as the temperature drops. This peculiar phenomenon can be ascribed to the reduction in the long-range interaction of polarization dipoles upon cooling, as evidenced by the dielectric spectrum. The diminished long-range interaction results in the emergence of nanodomains and a re-entrant relaxer behavior, offering novel insights into the origin of ferroelectricity and the stability of ferroelectric polarization in hafnia-based thin films. Given the commendable compatibility of Hf0.5Zr0.5O2 films with Si substrates and a pyroelectric coefficient of -62.1 μC/m2·K, they emerge as a prime candidate for sensor device applications. © 2023, The Authors. All rights reserved.

关键词： Thin films

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A Photoelectric-Stimulated MoS_(2) Transistor for Neuromorphic Engineering

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Research 2019年第1期2019卷 273-282页

作者： Shuiyuan Wang Xiang Hou Lan Liu Jingyu Li Yuwei Shan Shiwei Wu David Wei Zhang Peng Zhou ASIC&System State Key Lab. School of MicroelectronicsFudan UniversityShanghai 200433China Department of Physics State Key Laboratory of Surface PhysicsKey Laboratory of Micro and Nano Photonic Structures(Ministry of Education)and Institute for Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China

The von Neumann bottleneck has spawned the rapid expansion of neuromorphic engineering and brain-like *** serve as bridges for information transmission and connection in the biological nervous *** direct implementation of neural networks may depend on novel materials and devices that mimic natural neuronal and synaptic *** exploiting the interfacial effects between MoS_(2) and AlOx,we demonstrate that an h-BN-encapsulated MoS_(2) artificial synapse transistor can mimic the basic synaptic behaviors,including EPSC,PPF,LTP,and *** optoelectronic spikes enable simulation of synaptic gain,frequency,and weight *** Pavlov classical conditioning experiment was successfully simulated by electrical tuning,showing associated learning *** addition,h-BN encapsulation effectively improves the environmental time stability of our *** h-BN-encapsulated MoS_(2) artificial synapse provides a new paradigm for hardware implementation of neuromorphic engineering.

关键词： tuning optoelectronic artificial

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