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arXiv 2021年

作者： Song, Shuren Zhou, Jia Riaud, Antoine Marcianò, Antonino State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China Department of Physics Center for Field Theory and Particle Physics Fudan University Shanghai200433 China Laboratori Nazionali di Frascati INFN Via Enrico Fermi 54 Frascati Roma Italy

Hydrodynamics knots are not only promising elementary structures to study mass and momentum transfer in turbulent flows, but also potent analogs for other topological problems arising in particle physics. However, experimental studies of knots are highly challenging due to the limited control over knot generation and difficult observation of the resulting fast-paced multiscale flow evolution. In this paper, we propose using acoustic streaming to tie hydrodynamic knots in fluids. The method is contactless, almost instantaneous and is relatively insensitive to viscosity. Importantly, it allows starting from quite arbitrary three dimensional flow structures without relying on external boundary conditions. We demonstrate our approach by using an acoustic screw dislocation to tie a knot in a sessile droplet. We observe an inversion of the knot chirality (measured by the hydrodynamic helicity) as the topological charge of the screw dislocation is increased. Combined with recent progress in acoustic field synthesis, this work opens a window to study more complex hydrodynamic knot topologies at a broader range of space and timescales. Copyright © 2021, The Authors. All rights reserved.

关键词： Topology

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A Novel PUF Using Stochastic Short-Term Memory Time of Oxide-Based RRAM for Embedded Applications

A Novel PUF Using Stochastic Short-Term Memory Time of Oxide...

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International Electron Devices Meeting (IEDM)

作者： Jianguo Yang Deyang Chen Qinting Ding Jinbei Fang Xiaoyong Xue Hangbing Lv Xiaoyang Zeng Ming Liu Zhejiang Lab Hangzhou China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China

ISBN: (数字)9781728188881

ISBN: (纸本)9781728188898

RRAM suffers from poor retention with short-term memory time when using low compliance current for programing. However, the short-term memory time exhibits ideal randomness, which can be exploited as an entropy source for physically unclonable function (PUF). In this work, we demonstrated a novel PUF utilizing the stochastic short-term memory time of oxide-based RRAM. The proposed PUF was implemented on a 256Kb HfO 2 /WO x bilayer RRAM test chip in 0.13μm logic process. The RRAM PUF is capable of regenerating >10 20 times after 10 years@115°C and the bit error rate (BER) remains

关键词： Temperature measurement Microprocessors Stochastic processes Computer architecture Transforms Entropy Sensors

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P-66: Simulation and Optimization of In-Situ Integration Ultraviolet HEMT-LED Enabled by P-GaN Selective Epitaxy Growth

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SID Symposium Digest of Technical Papers 2023年第1期54卷

作者： Jingyang Zhang Wei Huang Zhaojun Liu Department of Electronic and Electrical Engineering Southern University of Science and Technology Shenzhen Guangdong China 518055 A State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai China 200433

Based on previous work, the ultraviolet HEMT-LED we fabricated by selective epitaxy growth, this paper further performed simulation to explore the most appropriate p-GaN selection size. P-GaN grown by Selective Epitaxy Growth (SEG) can not only be employed as a junction termination to reduce the electric field crowding of the gate of HEMT, but also form an active region by contacting with 2-dimentional electron gas (2DEG). The simulation results provide an effective reference for the design of p-GaN grown by SEG, and further pave the way for the realization of the idea of integration through the selection of growth methods.

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Design and Modeling of a Dual-Driving PMUT with Increased Round-Trip Sensitivity

Design and Modeling of a Dual-Driving PMUT with Increased Ro...

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： Leming He Ning Lv Yan Wang Weijiang Xu Junyan Ren State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China UMR 8520-IEMN-Institut D’Electronique de Microélectronique et de Nanotechnologie Univ. Polytechnique Hauts-de-France CNRS Univ. Lille Valenciennes France UMR 8520-IEMN- Institut d’Electronique de Microélectronique et de Nanotechnologie INSA Hauts-de-France Univ. Polytechnique Hauts-de-France CNRS Univ. Lille Valenciennes France

Piezoelectric micromachined ultrasonic transducers (PMUTs) are fabricated with Micro-Electro-Mechanical systems (MEMS) processes. They have advantages such as high uniformity and density, high flexibility in array configuration, and compatibility with integrated circuits. However, the transmitting/receiving sensitivity and the bandwidth of PMUTs are usually lower than those of capacitive micromachined ultrasonic transducers (CMUTs) and conventional thickness mode transducers, which are vital for acoustical imaging resolution. This work presents a novel structure of piezoelectric micromachined ultrasonic transducer (PMUT) with dual piezoelectric driving at the device’s top surface, achieving better round-trip sensitivity while keeping cell size small compared with traditional PMUTs. Due to the high transmitting performance of the PZT film and the high receiving performance of the AlN film, the designed PMUT achieves ideal round-trip sensitivity-relative bandwidth product (Rt-SBW), which is 9.68dB higher than that of the optimized PZT-PMUT and 26.36dB higher than that of the optimized AlN-PMUT, greatly improving the pulse-echo imaging quality.

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Approximate Logic Synthesis in the Loop for Designing Low-Power Neural Network Accelerator

Approximate Logic Synthesis in the Loop for Designing Low-Po...

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IEEE International Symposium on Circuits and systems

作者： Yifan Qian Chang Meng Yawen Zhang Weikang Qian Runsheng Wang Ru Huang University of Michigan-Shanghai Jiao Tong University Joint Institute Shanghai Jiao Tong University Shanghai China Institute of Microelectronics Peking University Beijing China MoE Key Laboratory of Artificial Intelligence Shanghai Jiao Tong University Shanghai China State Key Laboratory of ASIC & System Fudan University Shanghai China

Approximate computing is an emerging circuit design paradigm. It improves the energy efficiency of circuits by introducing some errors. Recent works propose to apply approximate multipliers to design low-power neural network (NN) accelerators. Different from existing methods, in this paper, we advocate a method that integrates approximate logic synthesis (ALS) into the design loop of low-power NN accelerators. ALS automatically synthesizes a good approximate circuit and can take input distribution into consideration. With the help of ALS, the NN computation pattern can be exploited to design an approximate multiplier that fits better with the NN. The experimental results show that the proposed method can generate an extremely small approximate multiplier with area only 4.2% of the accurate version, while it can still achieve a high accuracy of 97.9% for LeNet-5 on MNIST dataset.

关键词： Circuits and systems Approximate computing Artificial neural networks Energy efficiency Circuit synthesis

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引用

研究（英文） 2020年第2期 277-286页

作者： Shuiyuan Wang Xiang Hou Lan Liu Jingyu Li Yuwei Shan Shiwei Wu David Wei Zhang Peng Zhou ASIC & System State Key Lab. School of Microelectronics Fudan University Shanghai 200433 China Department of Physics State Key Laboratory of Surface Physics Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Institute for Nanoelectronic Devices and Quantum Computing Fudan University Shanghai 200433 China

The von Neumann bottleneck has spawned the rapid expansion of neuromorphic engineering and brain-like *** serve as bridges for information transmission and connection in the biological nervous *** direct implementation of neural networks may depend on novel materials and devices that mimic natural neuronal and synaptic *** exploiting the interfacial effects between MoS2 and AlOx,we demonstrate that an h-BN-encapsulated MoS2 artificial synapse transistor can mimic the basic synaptic behaviors,including EPSC,PPF,LTP,and *** optoelectronic spikes enable simulation of synaptic gain,frequency,and weight *** Pavlov classical conditioning experiment was successfully simulated by electrical tuning,showing associated learning *** addition,h-BN encapsulation effectively improves the environmental time stability of our *** h-BN-encapsulated MoS2 artificial synapse provides a new paradigm for hardware implementation of neuromorphic engineering.

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Effective Lifetime of Non-Equilibrium Carriers in Semiconductors from Non-Adiabatic Molecular Dynamics Simulations

arXiv

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arXiv 2022年

作者： Wang, Shanshan Huang, Menglin Wu, Yu-Ning Chu, Weibin Zhao, Jin Walsh, Aron Gong, Xin-Gao Wei, Su-Huai Chen, Shiyou State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China Department of Electronics East China Normal University Shanghai 200241 China ICQD/Hefei National Laboratory for Physical Sciences at the Microscale CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics Department of Physics University of Science and Technology of China Anhui Hefei230026 China Department of Materials Imperial College London Exhibition Road LondonSW7 2AZ United Kingdom Shanghai Qi Zhi Institute Shanghai 200030 China Beijing Computational Science Research Center Beijing100193 China

The lifetime of non-equilibrium electrons and holes in semiconductors is crucial for solar cell and optoelectronic applications. Non-adiabatic molecular dynamics (NAMD) simulations based on time-dependent density functional theory (TDDFT) are widely used to study excited-state carrier dynamics. However, the calculated carrier lifetimes are often different from experimental results by orders of magnitude. In this work, by revisiting the definition of carrier lifetime and considering different recombination mechanisms, we report a systematic procedure for calculating the effective carrier lifetime in realistic semiconductor crystals that can be compared directly to experimental measurements. The procedure shows that considering all recombination mechanisms and using reasonable densities of carriers and defects are crucial in calculating the effective lifetime. When NAMD simulations consider only Shockey-Read-Hall (SRH) defect-assisted and band-to-band non-radiative recombination while neglect band-to-band radiative recombination, and the densities of non-equilibrium carriers and defects in supercell simulations are much higher than those in realistic semiconductors under solar illumination, the calculated lifetimes are ineffective and thus differ from experiments. Using our procedure, the calculated effective lifetime of the halide perovskite CH3NH3PbI3 agrees with experiments. It is mainly determined by band-to-band radiative and defect-assisted non-radiative recombination, while band-to-band non-radiative recombination is negligible. These results indicate that it is possible to calculate carrier lifetimes accurately based on NAMD simulations, but the directly calculated values should be converted to effective lifetimes for comparison to experiments. The revised procedure can be widely applied in future carrier lifetime simulations. Copyright © 2022, The Authors. All rights reserved.

关键词： Molecular dynamics

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Continuous-Time Digital Twin with Analogue Memristive Neural Ordinary Differential Equation Solver

arXiv

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arXiv 2024年

作者： Chen, Hegan Yang, Jichang Chen, Jia Wang, Songqi Wang, Shaocong Wang, Dingchen Tian, Xinyu Yu, Yifei Chen, Xi Lin, Yinan He, Yangu Wu, Xiaoshan Li, Yi Zhang, Xinyuan Lin, Ning Xu, Meng Li, Yi Zhang, Xumeng Wang, Zhongrui Wang, Han Shang, Dashan Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Institute of the Mind The University of Hong Kong Hong Kong Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan430074 China State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200433 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong

Digital twins, the cornerstone of Industry 4.0, replicate real-world entities through computer models, revolutionising fields such as manufacturing management and industrial automation. Recent advances in machine learning provide data-driven methods for developing digital twins using discrete-time data and finite-depth models on digital computers. However, this approach fails to capture the underlying continuous dynamics and struggles with modelling complex system behaviour. Additionally, the architecture of digital computers, with separate storage and processing units, necessitates frequent data transfers and Analogue-Digital (A/D) conversion, thereby significantly increasing both time and energy costs. Here, we introduce a memristive neural ordinary differential equation (ODE) solver for digital twins, which is capable of capturing continuous-time dynamics and facilitates the modelling of complex systems using an infinite-depth model. By integrating storage and computation within analogue memristor arrays, we circumvent the von Neumann bottleneck, thus enhancing both speed and energy efficiency. We experimentally validate our approach by developing a digital twin of the HP memristor, which accurately extrapolates its nonlinear dynamics, achieving a 4.2-fold projected speedup and a 41.4-fold projected decrease in energy consumption compared to state-of-the-art digital hardware, while maintaining an acceptable error margin. Additionally, we demonstrate scalability through experimentally grounded simulations of Lorenz96 dynamics, exhibiting projected performance improvements of 12.6-fold in speed and 189.7-fold in energy efficiency relative to traditional digital approaches. By harnessing the capabilities of fully analogue computing, our breakthrough accelerates the development of digital twins, offering an efficient and rapid solution to meet the demands of Industry 4.0. © 2024, CC BY-NC-SA.

关键词： Energy utilization

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Design and Implementation of High Performance Elliptic Curve Coprocessor Based on Dual Finite Field 6th

Design and Implementation of High Performance Elliptic Curve...

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6th International Conference on Life system Modeling and Simulation, LSMS 2020, and 6th International Conference on Intelligent Computing for Sustainable Energy and Environment, ICSEE 2020

作者： Han, Guang Chen, Guanghua Wu, Yupeng Zeng, Weimin Liu, Jingjing School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China Shandong Hua Yi Micro-Electronics Technology Co. Ltd. Jinan250101 China School of Microelectronics Shandong University Jinan250101 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai201203 China Key Laboratory of Air-Driven Equipment Technology of Zhejiang Province Quzhou University Quzhou324000 China

ISBN: (纸本)9789813363779

In order to realize the scalar multiplication algorithm in GF (p) and GF (2m), and reducing the module implementation area, a high performance elliptic curve cryptographic coprocessor supporting dual finite field is designed and implemented. By multiplexing the shift register, the operation efficiency of the modular multiplication algorithm is greatly improved. On the other hand, combining multiplication and inverse operations, which reduces the extra modular multiplication operation after inverse operation and reduces the complexity of implementation. After verification by comparing systemC model with RTL coding, the function of the improved algorithm is correct. The result of hardware simulation shows that the equivalent unit gate is 27092 by 0.13 um SMIC standard cell process library. The modified modular multiplication requires 37.2 us, and the modular inverse requires only 96.1 us under 50 MHz clock constraint, average of 233 bit operation in GF (2m) and 256bit operation in GF (p). Compared with previous works, it has a large advantage in terms of area, and the speed has reached the expected goal. © 2020, Springer Nature Singapore Pte Ltd.

关键词： Coprocessor

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Two-Dimensional Organic-Inorganic Room-Temperature Multiferroic

arXiv

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arXiv 2022年

作者： Yang, Yali Ji, Junyi Feng, Junsheng Chen, Shiyou Bellaiche, Laurent Xiang, Hongjun Institute of Computational Physical Sciences Department of Physics Fudan University Shanghai200433 China Shanghai Qi Zhi Institute Shanghai200030 China School of Physics and Materials Engineering Hefei Normal University Hefei230601 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China Physics Department Institute for Nanoscience and Engineering University of Arkansas FayettevilleAR72701 United States Collaborative Innovation Center of Advanced Microstructures Nanjing210093 China

Organic-inorganic multiferroics are promising for the next generation of electronic devices. To date, dozens of organic-inorganic multiferroics have been reported;however, most of them show magnetic Curie temperature much lower than room temperature, which drastically hampers their application. Here, by performing first-principle calculations and building effective model Hamiltonians, we reveal a molecular orbital-mediated magnetic coupling mechanism in two-dimensional Cr(pyz)2 (pyz=pyrazine), and the role that the valence state of the molecule plays in determining the magnetic coupling type between metal ions. Based on these, we demonstrate that a two-dimensional organic-inorganic room-temperature multiferroic, Cr(h-fpyz)2 (h-fpyz= half-fluoropyrazine), can be rationally designed by introducing ferroelectricity in Cr(pyz)2 while keeping the valence state of the molecule unchanged. Our work not only reveals the origin of magnetic coupling in 2D organic-inorganic systems, but also provides a way to design room temperature multiferroic materials rationally. Copyright © 2022, The Authors. All rights reserved.

关键词： Metal ions

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