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A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials

Nano-Micro Letters 2025年第8期17卷 294-305页

作者： Yang Shen Zhejia Zhang Zhujun Yao Mengge Jin Jintian Gao Yuhan Zhao Wenzhong Bao Yabin Sun He Tian College of Integrated Circuit Science and Engineering Shanghai Key Laboratory of Multidimensional Information ProcessingEast China Normal UniversityShanghai 200241People’s Republic of China Institute of Microelectronics and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433People’s Republic of China Shaoxin Laboratory Shaoxing 312000People’s Republic of China

Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level *** the stacking process advances,the complexity and cost of nanosheet field-effect transistors(NSFETs)and complementary FET(CFET)continue to *** 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems(IRDS)(2022,https://***/),but not publicly confirmed,indicating that more possibilities still *** miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area,power consumption and *** this study,a comprehensive framework is built.A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and *** then for benchmarking,the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device *** these conditions,the frequency of ultra-scaled 2D-NSFET is found to improve by 36%at a fixed power *** work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes,i.e.,“2D eq 1 nm”*** the same time,thanks to the lower characteristic length of 2D semiconductors,the miniaturized 2D-NSFET achieves a 28%frequency increase at a fixed power ***,developing a standard cell library,these devices obtain a similar trend in 16-bit RISC-V *** work quantifies and highlights the advantages of 2D semiconductors in advanced nodes,offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.

关键词： Two-dimensional semiconductors 1 nm technology node Nanosheet field-effect transistors Complementary field-effect transistors Horizontal scaling

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A 1GS/s Highly Linear Voltage-to-Time Converter with Rail-to-Rail Input Range for Time Domain ADCs 16

A 1GS/s Highly Linear Voltage-to-Time Converter with Rail-to...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Zhao, Yutong Ye, Fan Ren, Junyan Fudan University State Key Laboratory of Asic and System Department of Microelectronics Shanghai201203 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

This paper presents a highly linear voltage-to-time converter (VTC) with a bottom-plate sampling and voltage-boost scheme to obtain a rail-to-rail input range. A cascode current mirror and a dynamic threshold crossing detector (TCD) are also added to improve the linearity during the discharging process. Simulated in TSMC 28nm CMOS process, the proposed VTC achieves a 63.6-dB SFDR and an 8.4-bit ENOB for a Nyquist input at 1-GHz sampling frequency while consuming 1.5 mW. The input range is +/-900mV and the output range is +/-662ps. © 2022 IEEE.

关键词： Integrated circuit technology Current mirrors Linearity Detectors CMOS process Time-domain analysis

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OrderMap: A CGRA Mapping Algorithm based on DFG Analysis and Graph Homomorphism 16

OrderMap: A CGRA Mapping Algorithm based on DFG Analysis and...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Li, Jiangnan Zheng, Su Wang, Lingli Yin, Wenbo Fudan University State Key Laboratory of Asic and System Department of Microelectronics Shanghai200433 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

Coarse-grained reconfigurable architecture (CGRA) accelerator is a promising solution in fields such as deep learning and edge computing. One of the difficult problems to design the accelerator is to map the data flow graph (DFG) to the architecture efficiently. The previous mapping algorithms based on graph structure mainly focus on optimization during the placement and routing stage, which may fall into a local minimum and lead to an increase in initiation interval (II). We propose a CGRA mapping algorithm, OrderMap, based on DFG analysis and graph homomorphism. It analyzes the DFG structure information to decide the node mapping order, followed by placement, and routing. Experimental results show that our algorithm is faster than CGRA-ME with smaller IIs. Compared with FastCGRA based on the depth-first order, OrderMap is 22.3 × faster with the same mapping results. © 2022 IEEE.

关键词： Deep learning

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A 12-Bit 250-MS/s Voltage-Time Domain Hybrid ADC 16

A 12-Bit 250-MS/s Voltage-Time Domain Hybrid ADC

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Zhao, Yutong Ye, Fan Ren, Junyan Fudan University State Key Laboratory of Asic and System Department of Microelectronics Shanghai201203 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

This article presents a 12-bit 250-MS/s voltage-time domain hybrid analog-to-digital converter (ADC). In the proposed ADC, the first stage is a binary-weighted SAR ADC, and the second stage is a coarse-fine time-to-digital converter (TDC), connected with a highly linear dynamic voltage-to-time converter (VTC). Using the combination of voltage and time domain quantization, this hybrid architecture is power efficient and can benefit from technology scaling. The time domain folding of the ring oscillator leads to an inherently linear operation. The prototype ADC is simulated in TSMC 28nm CMOS process with a 0.9V power supply, achieving a 55.62-dB SNDR and a 67.16-dB SFDR at Nyquist input. The power consumption is 1.36 mW, obtaining a Walden figure of merit (FoM) of 11.07 fJ/conv.- step. © 2022 IEEE.

关键词： Frequency converters

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Construction of mesoporous silica-implanted tungsten oxides for selective acetone gas sensing

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Chinese Chemical Letters 2024年第11期35卷 492-498页

作者： Jichun Li Zhengren Wang Yu Deng Hongxiu Yu Yonghui Deng Xiaowei Cheng Kaiping Yuan Department of Chemistry Shanghai Stomatological Hospital&School of StomatologyState Key Laboratory of Molecular Engineering of PolymersShanghai Key Laboratory of Molecular Catalysis and Innovative MaterialsiCHEMFudan UniversityShanghai 200433China Frontier Institute of Chip and System State Key Laboratory of ASIC and SystemFudan UniversityShanghai 200433China State Key Lab of Transducer Technology Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050China

As a key biomarker for noninvasive diagnosis of diabetes,the selective detection of trace acetone in exhaled gas using a portable and low-cost device remains a great *** metal oxide(SMO)based gas sensors have drawn signification attention due to their potential in miniaturization,user-friendliness,high cost-effectiveness and selective real-time detection for noninvasive clinical ***,we propose a one-pot solvent evaporation induced tricomponent co-assembly strategy to design a novel ordered mesoporous SMO of silica-implanted WO_(3)(Si O_(2)/WO_(3))as sensing materials for trace acetone *** controlled co-assembly of silicon and tungsten precursors and amphiphilic diblock copolymer poly(ethylene oxide)-block-polystyrene(PEO-b-PS),and the subsequent thermal treatment enable the local lattice disorder of WO_(3)induced by the amorphous silica and the formation of ordered mesoporous Si O_(2)/WO_(3)hybrid walls with a unique metastableε-phase WO_(3)*** obtained mesoporous SiO_(2)/WO_(3)composites possess highly crystalline framework with large uniform pore size(12.0-13.3 nm),high surface area(99-113 m^(2)/g)and pore volume(0.17-0.23 cm^(3)/g).Typically,the asfabricated gas sensor based on mesoporous 2.5%Si O_(2)/WO_(3)exhibits rapid response/recovery rate(5/17 s),superior sensitivity(R_(air)/R_(gas)=105 for 50 ppm acetone),as well as high selectivity towards *** limit of detection is as low as 0.25 ppm,which is considerably lower than the thresh value of acetone concentration(>1.1 ppm)in the exhaled breath of diabetic patients,demonstrating its great prospect in real-time monitoring in diabetes ***,the mesoporous 2.5%Si O_(2)/WO_(3)sensor is integrated into a wireless sensing module connected to a smart phone,providing a convenient real-time detection of acetone.

关键词： Mesoporous materials ε-Tungsten oxide Silica-implanted Acetone sensing Real-time detection

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Giant infrared bulk photovoltaic effect in tellurene for broad-spectrum neuromodulation

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Light(Science & Applications) 2024年第11期13卷 2812-2823页

作者： Zhen Wang Chunhua Tan Meng Peng Yiye Yu Fang Zhong Peng Wang Ting He Yang Wang Zhenhan Zhang Runzhang Xie Fang Wang Shuijin He Peng Zhou Weida Hu State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaiChina State Key Laboratory of ASIC and System Department of MicroelectronicsFudan UniversityShanghaiChina University of Chinese Academy of Sciences BeijingChina School of Life Science and Technology ShanghaiTech UniversityShanghaiChina School of Mathematical and Physical Sciences Wuhan Textile UniversityWuhanChina Shanghai Clinical Research and Trial Center ShanghaiChina

Given the surpassing of the Shockley-Quiesser efficiency limit in conventional p-n junction photovoltaic effect,bulk photovoltaic effect(BPVE)has garnered significant research ***,the BPVE primarily focuses on a narrow wavelength range,limiting its potential *** we report a giant infrared bulk photovoltaic effect in tellurene(Te)for broad-spectrum *** generated photocurrent in uniformly illuminated Te excludes other photoelectric effects and is attributed to the *** bulk photovoltaic wavelength in Te spans a wide range from the ultraviolet(390 nm)to the mid-infrared(3.8μm).Moreover,the photocurrent density of 70.4 A cm^(−2) under infrared light simulation outperforms that in previous ultraviolet and visible semiconductors as well as infrared *** attached to the dendrites or somata of the cortical neurons successfully elicit action potentials under broad-spectrum light *** work lays the foundation for the further development of infrared BPVE in narrow bandgap materials.

关键词： effect spectrum ultraviolet

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Access Your Tesla without Your Awareness: Compromising keyless Entry system of Model 3 30

Access Your Tesla without Your Awareness: Compromising Keyle...

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30th Annual Network and Distributed system Security Symposium, NDSS 2023

作者： Xie, Xinyi Jiang, Kun Dai, Rui Lu, Jun Wang, Lihui Li, Qing Yu, Jun Shanghai Fudan Microelectronics Group Co. Ltd China State Key Laboratory of ASIC & System Fudan University China

ISBN: (纸本)1891562835

Tesla Model 3 has equipped with Phone keys and key Cards in addition to traditional key fobs for better driving experiences. These new features allow a driver to enter and start the vehicle without using a mechanical key through a wireless authentication process between the vehicle and the key. Unlike the requirements of swiping against the car for key Cards, the Tesla mobile app’s Phone key feature can unlock a Model 3 while your smartphone is still in a pocket or bag. In this paper, we performed a detailed security analysis aiming at Tesla keys, especially for key Cards and Phone keys. Starting with reverse engineering the mobile application and sniffing the communication data, we reestablished pairing and authentication protocols and analyzed their potential issues. Missing the certificate verification allows an unofficial key Card to work as an official one. Using these third-party products may lead to serious security problems. Also, the weaknesses of the current protocol lead to a man-in-the-middle (MitM) attack through a Bluetooth channel. The MitM attack is an improved relay attack breaking the security of the authentication procedures for Phone keys. We also developed an App named TESmLA installed on customized Android devices to complete the proof-of-concept. The attackers can break into Tesla Model 3 and drive it away without the awareness of the car owner. Our results bring into question the security of Passive keyless Entry and Start (PKES) and Bluetooth implementations in security-critical applications. To mitigate the security problems, we discussed the corresponding countermeasures and feasible secure scheme in the future. © 2023 30th Annual Network and Distributed system Security Symposium, NDSS 2023. All Rights Reserved.

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Erasable Ferroelectric Domain Wall Diodes

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Chinese Physics Letters 2021年第1期38卷 121-124页

作者： Wei Zhang Chao Wang Jian-Wei Lian Jun Jiang An-Quan Jiang State Key Laboratory of ASIC&System School of MicroelectronicsFudan UniversityShanghai 200433China

The unipolar diode-like domain wall currents in LiNbO3 single-crystal nanodevices are not only attractive in terms of their applications in nonvolatile ferroelectric domain wall memory,but also useful in half-wave and full-wave rectifier systems,as well as detector,power protection,and steady voltage *** traditional diodes,where the rectification functionality arises from the contact between n-type and p-type conductors,which are unchanged after off-line production,ferroelectric domain wall diodes can be reversibly created,erased,positioned,and shaped,using electric *** demonstrate such functionality using ferroelectric mesa-like cells,formed at the surface of an insulating X-cut LiNbO_(3) single *** the application of an in-plane electric field above a coercive field along the polar Z axis,the domain within the cell is reversed to be antiparallel to the unswitched bottom domain via the formation of a conducting domain *** wall current was rectified using two interfacial volatile domains in contact with two side Pt *** the nonvolatile inner domain wall,the interfacial domain walls disappear to turn off the wall current path after the removal of the applied electric field,or under a negative applied voltage,due to the built-in interfacial imprint *** novel devices have the potential to facilitate the random definition of diode-like elements in modern large-scale integrated circuits.

关键词： switched ferroelectric interfacial

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Monolithic Logic Units based on DCFL Structure on p-GaN platform for GaN ICs 15

Monolithic Logic Units based on DCFL Structure on p-GaN plat...

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15th IEEE International Conference on asic, asicON 2023

作者： Pan, Maolin Wang, Luyu Wang, Qiang Zhang, Penghao Wang, Yuhang Xu, Min Fudan University Shanghai State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics China

ISBN: (纸本)9798350312980

GaN-based digital integrated circuits (ICs) are constructed on the commercially available GaN-on-Si p-GaN platform. The functions of inverter, NAND, AND, NOR, and OR logic circuits are successfully realized based on direct-coupled field-effect transistor logic (DCFL) structure. Under a drive voltage of 5V and a load ratio of 20, the low output (VOL) can reach as low as 0.1V. Additionally, a functional-oriented driver is constructed. All the transient tests at frequencies up to 100 kHz exhibit excellent performance characteristics. © 2023 IEEE.

关键词： GaN-ICs Inverter NAND-AND NOR-OR p-GaN HEMT

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A high-speed 2D optoelectronic in-memory computing device with 6-bit storage and pattern recognition capabilities

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Nano Research 2022年第3期15卷 2472-2478页

作者： Jialin Meng Tianyu Wang Zhenyu He Qingxuan Li Hao Zhu Li Ji Lin Chen Qingqing Sun David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China National Integrated Circuit Innovation Center No.825 Zhangheng RoadShanghai 201203China

The explosively developed era of big-data compels the increasing demand of nonvolatile memory with high efficiency and excellent storage ***,we fabricated a high-speed photoelectric multilevel memory device for neuromorphic *** novel two-dimensional(2D)MoSSe with a unique Janus structure was employed as the channel,and the stack of Al_(2)O_(3)/black phosphorus quantum dots(BPQDs)/Al_(2)O_(3)was adopted as the *** storage performance of the resulting memory could be verified by the endurance and retention tests,in which the device could remain stable states of programming and erasing even after 1,000 cycles and 1,000 *** multibit storage could be realized through both different voltage amplitudes and pulse numbers,which could achieve 6 bits(64 distinguishable levels)under pulse width of 50 ***,our memory device also could realize the simulations of synapses in human brain with optical and electric modulations synergistically,such as excitatory post-synaptic current(EPSC),long-term potentiation/depression(LTP/LTD),and spike-timing-dependent plasticity(STDP).Neuromorphic computing was successfully achieved through a high recognition of handwritten digits up to 92.5%after 103 *** research is a promising avenue for the future development of efficient memory and artificial neural network systems.

关键词： memory multibit two-dimensional(2D) MoSSe Co-modulation

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