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Superconductivity in pressurized trilayer La4Ni3O10-δ single crystals

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arXiv 2023年

作者： Zhu, Yinghao Peng, Di Zhang, Enkang Pan, Bingying Chen, Xu Chen, Lixing Ren, Huifen Liu, Feiyang Hao, Yiqing Li, Nana Xing, Zhenfang Lan, Fujun Han, Jiyuan Wang, Junjie Jia, Donghan Wo, Hongliang Gu, Yiqing Gu, Yimeng Ji, Li Wang, Wenbin Gou, Huiyang Shen, Yao Ying, Tianping Chen, Xiaolong Yang, Wenge Cao, Huibo Zheng, Changlin Zeng, Qiaoshi Guo, Jiangang Zhao, Jun State Key Laboratory of Surface Physics Department of Physics Fudan University Shanghai200433 China Shanghai Research Center for Quantum Sciences Shanghai201315 China Shanghai201203 China College of Physics and Optoelectronic Engineering Ocean University of China Shandong Qingdao266100 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing100190 China Neutron Scattering Division Oak Ridge National Laboratory Oak RidgeTN37831 United States Center for High Pressure Science and Technology Advanced Research Shanghai201203 China School of Physical Sciences University of Chinese Academy of Sciences Beijing100049 China Center for High Pressure Science and Technology Advanced Research Beijing100094 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China Institute of Nanoelectronics and Quantum Computing Fudan University Shanghai200433 China Shanghai Branch Hefei National Laboratory Shanghai201315 China

The pursuit of discovering new high-temperature superconductors that diverge from the copper-based paradigm1-3 carries profound implications for elucidating mechanisms behind superconductivity and may also enable new applications4-8. Here, our investigation reveals that application of pressure effectively suppresses the spin and charge order in trilayer nickelate La4Ni3O10-δ single crystals, leading to the emergence of superconductivity with a maximum critical temperature (Tc) of around 30 K at 69.0 GPa. The DC susceptibility measurements confirm a substantial diamagnetic response below Tc, indicating the presence of bulk superconductivity with a volume fraction exceeding 80%. In the normal state, we observe a "strange metal" behavior, characterized by a linear temperature-dependent resistance extending up to 300 K. Furthermore, the layer-dependent superconductivity observed hints at a unique interlayer coupling mechanism specific to nickelates, setting them apart from cuprates in this regard. Our findings provide crucial insights into the fundamental mechanisms underpinning superconductivity, while also introducing a new material platform to explore the intricate interplay between the spin/charge order, flat band structures, interlayer coupling, strange metal behavior and high-temperature superconductivity. © 2023, CC BY-NC-ND.

关键词： Single crystals

A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm2 using Sneaking Current Suppression and Compensation Techniques

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A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm2 using Sneak...

Symposium on VLSI Circuits

作者： Jianguo Yang Xiaoyong Xue Xiaoxin Xu Hangbing Lv Feng Zhang Xiaoyang Zeng Meng-Fan Chang Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences China State Key Laboratory of ASIC and System Fudan University China University of Chinese Academy of Sciences Department of Electrical Engineering National Tsing Hua University Taiwan

ISBN: (数字)9781728199429

ISBN: (纸本)9781728199436

For the first time, 1T2R RRAM cell using PMOS selector is proposed and demonstrated with improved reset voltage and high density for embedded NVM. Hierarchical bit line and 3-state cell storage confine the associated sneaking current locally within a small zone and further suppress it by >90%. Self-adaptive write driver with current limiter and sneaking current compensator realizes power saving and accurate current compliance for set. To suit PMOS selector, reverse read using current sensing with dummy reference brings fast and reliable read. A 1.5Mb RRAM test chip in 28nm improved the record storage density by 40% to 14.8 Mb/mm 2 . Reliable read is performed at low VDD of 0.6V@(-40, 125)°C.

关键词： Computer architecture Microprocessors Resistors Current limiters MOS devices Resistance Transistors

Charge transport and quantum confinement in MoS2 dual-gated transistors

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Journal of Semiconductors 2020年第7期41卷 39-43页

作者： Fuyou Liao Hongjuan Wang Xiaojiao Guo Zhongxun Guo Ling Tong Antoine Riaud Yaochen Sheng Lin Chen Qingqing Sun Peng Zhou David Wei Zhang Yang Chai Xiangwei Jiang Yan Liu Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China Institute of Semiconductors Chinese Academy of SciencesBeijing 100083China The Hong Kong Polytechnic University Shenzhen Research Institute Shenzhen 518057China Department of Applied Physics The Hong Kong Polytechnic UniversityHong KongChina

Semiconductive two dimensional(2D)materials have attracted significant research attention due to their rich band structures and promising potential for next-generation electrical *** this work,we investigate the MoS2 field-effect transistors(FETs)with a dual-gated(DG)architecture,which consists of symmetrical thickness for back gate(BG)and top gate(TG)*** thickness-dependent charge transport in our DG-MoS2 device is revealed by a four-terminal electrical measurement which excludes the contact influence,and the TCAD simulation is also applied to explain the experimental *** results indicate that the impact of quantum confinement effect plays an important role in the charge transport in the MoS2 channel,as it confines charge carriers in the center of the channel,which reduces the scattering and boosts the mobility compared to the single gating ***,temperature-dependent transfer curves reveal that multi-layer MoS2 DG-FET is in the phonon-limited transport regime,while single layer MoS2 shows typical Coulomb impurity limited regime.

关键词： MoS2 field effect transistors dual-gate quantum confinement Coulomb impurity

Ultrafast non-volatile flash memory based on van der Waals heterostructures

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arXiv 2020年

作者： Liu, Lan Ding, Yi Li, Jiayi Liu, Chunsen Zhou, Peng State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China School of Computer Science Fudan University Shanghai200433 China

Flash memory has become a ubiquitous solid-state memory device, it is widely used in portable digital devices, computers, and enterprise applications. The development of the information age has put forward higher requirements for memory speed and retention performance. Here, we demonstrate an ultrafast non-volatile memory based on MoS2/h-BN/multi-layer graphene (MLG) van der Waals heterostructures, which has an atomic-level flat interface and achieves ultrafast writing/erasing speed (~20 ns), surpassing the reported state-of-the-art flash memory (~100 ns). The ultrafast flash memory could lay the foundation for the next-generation of high-speed non-volatile memory. Copyright © 2020, The Authors. All rights reserved.

关键词： Layered semiconductors

Resistive Memory-based Neural Differential Equation Solver for Score-based Diffusion Model

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arXiv 2024年

作者： Yang, Jichang Chen, Hegan Chen, Jia Wang, Songqi Wang, Shaocong Yu, Yifei Chen, Xi Wang, Bo Zhang, Xinyuan Cui, Binbin Li, Yi Lin, Ning Xu, Meng Li, Yi Xu, Xiaoxin Qi, Xiaojuan Wang, Zhongrui Zhang, Xumeng Shang, Dashan Wang, Han Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200433 China Institute of the Mind the University of Hong Kong Hong Kong University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan430074 China Department of Electronic and Computer Engineering the Hong Kong University of Science and Technology Hong Kong

Human brains image complicated scenes when reading a novel. Replicating this imagination is one of the ultimate goals of AI-Generated Content (AIGC). However, current AIGC methods, such as score-based diffusion, are still deficient in terms of rapidity and efficiency. This deficiency is rooted in the difference between the brain and digital computers. Digital computers have physically separated storage and processing units, resulting in frequent data transfers during iterative calculations, incurring large time and energy overheads. This issue is further intensified by the conversion of inherently continuous and analog generation dynamics, which can be formulated by neural differential equations, into discrete and digital operations. Inspired by the brain, we propose a time-continuous and analog in-memory neural differential equation solver for score-based diffusion, employing emerging resistive memory. The integration of storage and computation within resistive memory synapses surmount the von Neumann bottleneck, benefiting the generative speed and energy efficiency. The closed-loop feedback integrator is time-continuous, analog, and compact, physically implementing an infinite-depth neural network. Moreover, the software-hardware co-design is intrinsically robust to analog noise. We experimentally validate our solution with 180 nm resistive memory in-memory computing macros. Demonstrating equivalent generative quality to the software baseline, our system achieved remarkable enhancements in generative speed for both unconditional and conditional generation tasks, by factors of 64.8 and 156.5, respectively. Moreover, it accomplished reductions in energy consumption by factors of 5.2 and 4.1. Our approach heralds a new horizon for hardware solutions in edge computing for generative AI applications. © 2024, CC BY-NC-SA.

关键词： Diffusion

Distortion-aware 2D soft decision for VCSEL-MMF optical PAM interconnection

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Distortion-aware 2D soft decision for VCSEL-MMF optical PAM ...

Optical Fiber Communication Conference, OFC 2020

作者： Sun, Lin Du, Jiangbing Zhang, Wenjia Chi, Nan Lu, Chao He, Zuyuan State Key Laboratory of Advanced Optical Communication Systems and Networks Shanghai Jiao Tong University Shanghai200240 China Department of Electronic and Information Engineering Photonics Research Centre Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong Department of Communication Science and Engineering State Key Lab of ASIC and System Fudan University Shanghai200433 China

A distortion-aware 2D soft decision method of PAM signals have been proposed for VCSEL-MMF interconnection system. Improvements and application potential have been experimentally investigated on a 112-Gbps optical PAM... 详细信息

ISBN: (数字)9781943580712

ISBN: (纸本)9781943580712

关键词： Optical fiber communication

Hydrodynamic constraints on the energy efficiency of droplet electricity generators

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arXiv 2020年

作者： Wang, Cui Zhou, Jia Riaud, Antoine Xu, Wanghuai Wang, Zuankai State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China Department of Mechanical Engineering City University of Hong Kong Hong Kong999077 Hong Kong

Electric energy generation from falling droplets has seen a hundred-fold rise in efficiency over the past year. However, even these newest devices can only extract a small portion of the droplet energy. In this paper, we theoretically investigate the contributions of hydrodynamic and electric losses in limiting the efficiency of droplet electricity generators (DEG). Noting that the electromechanical energy conversion occurs during the recoil that immediately follows droplet impact, we identify three limits on existing droplet electric generators: (i) the impingement velocity is limited in order to maintain the droplet integrity;(ii) much of droplet mechanical energy is squandered in overcoming viscous shear force with the substrate;(iii) insufficient electrical charge of the substrate. Of all these effects, we found that up to 83% of the total energy available was lost by viscous dissipation during spreading. Minimizing this loss by using cascaded DEG devices to reduce the droplet kinetic energy may increase future devices efficiency beyond 10%. Copyright © 2020, The Authors. All rights reserved.

关键词： Electric losses

Maxwell-Wagner Relaxations in Ca-, Sm- and Nd-doped Ceria

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Research Square

Research Square 2021年

作者： Ahmed, Rida Wang, Shuting T. ur Rehman, Sajid Sun, Jie Wang, Jin Si, Renjun Zhu, An Kang Yu, Yi Li, Qiuju Wang, Chunchang Laboratory of Dielectric Functional Materials School of Physics & Material Science Anhui University Hefei230601 China High Magnetic Field Laboratory Chinese Academy of Sciences Anhui Hefei230031 China State Key Laboratory of ASIC & System School of Microelectronics Fudan University Shanghai200433 China Information Materials and Intelligent Sensing Laboratory of Anhui Province Institutes of Physical Science and Information Technology Anhui University Hefei230601 China State Key Laboratory of Low-Dimensional Quantum Physics Department of Physics Tsinghua University Beijing100084 China

Doped ceria, i.e. Ce1-xMxO2-d with M being dopant metal, has been a focus of great attention for SOFCs due to its high oxygen conduction. In the past literature, the dielectric relaxations in these materials have been ascribed to be caused by defect associates (MCeʺ-Vö) possessing different MCeʺ and Vö distances. But we believe that with changing measurement and analysis techniques it is necessary to invest our time to re-examine the already reported materials and to again take a detailed investigation of the underlying phenomenon behind their dielectric relaxations. Thus, we have used solid-state reaction to prepare Ce1-xMxO2-δ with M=Ca, Sm, and Nd in x=0.1, 0.2, and 0.3 ratios, respectively. The as-prepared and post annealed samples were tested for dielectric properties from 300-1080 K with varying frequencies. The low-temperature relaxation (R1) was argued to be a Maxwell-Wagner relaxation caused by humidity sensitivity. The high-temperature relaxation (R2) was ascribed to be caused by hopping motion of oxygen vacancies. This fact was also supported by detailed analysis of impedance spectra. While, according to the previous reports this relaxation is because of oxygen-vacancy-dopant defect pair. © 2021, CC BY.

关键词： Oxygen vacancies

A Mixed-Variable Bayesian Optimization Approach for Analog Circuit Synthesis

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A Mixed-Variable Bayesian Optimization Approach for Analog C...

IEEE International Symposium on Circuits and systems (ISCAS)

作者： Jialin Lu Shuhan Zhang Fan Yang Dian Zhou Xuan Zeng State Key Lab of ASIC & System School of Microelectronics Fudan University China Department of Electrical Engineering University of Texas at Dallas Richardson TX U.S.A.

ISBN: (数字)9781728133201

ISBN: (纸本)9781728133218

Bayesian Optimization (BO) is an efficient method for black-box optimization problems. It has been successfully applied to the analog circuit sizing problem. However, all the design variables are viewed as continuous variables in these methods. Actually, many design variables are discrete due to the design rules. In this paper, we proposed an improved BO method for analog circuit sizing with both discrete and continuous variables. We also utilize the Gaussian Process (GP) regression model as the surrogate model for BO. However, we modified the kernel of GP and make it applicable to mixed variables. Experimental results demonstrated that the proposed mixed-variable BO method can significantly reduce the number of simulations with comparable optimization results, compared with the existing BO methods.

关键词： Optimization Analog circuits Kernel Linear programming Bayes methods Integrated circuit modeling Gaussian processes