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Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga_(2)O_(3) substrate

Chinese Physics B 2021年第1期30卷 483-486页

作者： Xu-Long Chu Zeng Liu Yu-Song Zhi Yuan-Yuan Liu Shao-Hui Zhang Chao Wu Ang Gao Pei-Gang Li Dao-You Guo Zhen-Ping Wu Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science&State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Engineering Research Center for Semiconductor Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China China Aerospace System Simulation Technology Co. Ltd.(Beijing)Beijing 100195China Division of Interdisciplinary and Comprehensive Research&Platform for Characterization and Test Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210046China

We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky *** device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 *** addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered *** work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.

关键词： β-Ga_(2)O_(3)substrate Schottky photodiode solar-blind detection

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Pruning random resistive memory for optimizing analogue AI

arXiv

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arXiv 2023年

作者： Li, Yi Wang, Songqi Zhao, Yaping Wang, Shaocong Zhang, Woyu He, Yangu Lin, Ning Cui, Binbin Chen, Xi Zhang, Shiming Jiang, Hao Lin, Peng Zhang, Xumeng Qi, Xiaojuan Wang, Zhongrui Xu, Xiaoxin Shang, Dashan Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong State Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Frontier Institute of Chip and System Fudan University Shanghai200433 China College of Computer Science and Technology Zhejiang University Zhejiang310027 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong University of Chinese Academy of Sciences Beijing100049 China Institute of Mind The University of Hong Kong Hong Kong

The rapid advancement of artificial intelligence (AI) has been marked by the large language models exhibiting human-like intelligence. However, these models also present unprecedented challenges to energy consumption and environmental sustainability, which are exacerbated by the increasing number of users and the development of even larger models. One promising solution is to revisit analogue computing, a technique that predates digital computing and exploits emerging analogue electronic devices, such as resistive memory, which features in-memory computing, high scalability, and nonvolatility that addresses the von Neumann bottleneck, slowdown of Moore’s law, and volatile DRAM of conventional digital hardware. However, analogue computing still faces the same challenges as before: programming nonidealities and expensive programming due to the underlying devices physics. Therefore, leveraging the efficiency advantage while mitigating the programming disadvantage of analogue computing with resistive memory is a major open problem in AI hardware and electronics communities. Here, we report a universal solution, software-hardware co-design using structural plasticity-inspired edge pruning to optimize the topology of a randomly weighted analogue resistive memory neural network. Software-wise, the topology of a randomly weighted neural network is optimized by pruning connections rather than precisely tuning resistive memory weights. Hardware-wise, we reveal the physical origin of the programming stochasticity using transmission electron microscopy, which is leveraged for large-scale and low-cost implementation of an overparameterized random neural network containing high-performance sub-networks. We implemented the co-design on a 40nm 256K resistive memory macro, observing 17.3% and 19.9% accuracy improvements in image and audio classification on FashionMNIST and Spoken digits datasets, as well as 9.8% (2%) improvement in PR (ROC) in image segmentation on DRIVE datasets, r

关键词： Energy utilization

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Mechanical Characterization of Cells and Microspheres Sorted by Acoustophoresis with In-Line Resistive Pulse Sensing

引用

Physical Review Applied 2020年第3期13卷 034058-034058页

作者： Antoine Riaud Wei Wang Anh L.P. Thai Valerie Taly Centre de Recherche des Cordeliers INSERM CNRS Sorbonne Université USPC Université Paris Descartes Université Paris Diderot F-75006-Equipe labellisée Ligue Nationale contre le cancer Paris France ASIC and System State Key Laboratory School of Microelectronics Fudan University Shanghai 200433 China

Resistive pulse sensing (RPS) is a key label-free technology to measure particles and single-cell size distribution. As a growing corpus of evidence supports that cancer cells exhibit distinct mechanical phenotypes from healthy cells, expanding the method from size to mechanical sensing could represent a pertinent and innovative tool for cancer research. In this paper, we infer the cells’ compressibility by using acoustic radiation pressure to deflect flowing cells in a microchannel, and use RPS to sense the subpopulations of cells and particles at each acoustic power level. Compared to current acoustic cell phenotyping apparatus based on video cameras, the proposed approach is not limited by optical diffraction, frame rate, data storage, or processing speed, and may ultimately constitute a step forward towards point-of-care acousto-electrical phenotyping and acoustic phenotyping of liquid biosamples.

关键词： Acoustic interactions Cell mechanics Metrology Microfluidics Nonlinear acoustics Cells Acoustic techniques Resistivity measurements

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Binary Convolutional Neural Network Based on 3d Field-Programmable Ferroelectric Diode Array

SSRN

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SSRN 2020年

作者： Luo, Qing Xue, Xiaoyong Chen, Bing Yu, Haoran Fang, Jinbei Cheng, Yan Zheng, Yunzhe Gong, Tiancheng Yu, Jie Xu, Xiaoxin Yang, Jianguo Yuan, Peng Tai, Lu Chen, Jiezhi Lv, Hangbing Liu, Ming Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences China State Key Laboratory of ASIC and System Fudan University China College of Information Science and Electronic Engineering Zhejiang University Hangzhou China East China Normal University Shanghai China University of Chinese Academy of Sciences School of Information Science and Engineering Shandong University

Ubiquitous artificial intelligence (AI) applications call for increasing computing power and large communication bandwidth, which are challenging to meet given the diminishing benefits from traditional planar CMOS scaling. Three-dimension (3D) integration of integrated circuits (IC) promises to achieve further performance improvements at reduced power and smaller footprint. Here, we report a 3D array of 8 layers of field-programmable ferroelectric diode (FPD) for binary convolutional neural network (BCNN) in energy-efficient AI applications. The convolutional kernels are duplicated and stored in the pillars in 3D FPD array to providing high computation parallelism. An AND-based logic using FPD is proposed to realize the XNOR function in BCNN. As a proof-of-concept demonstration, a BCNN is constructed based on the 3D FPD array for MNIST test and qualified to present the advantages of our proposal in 28nm logic process design kit. © 2020, The Authors. All rights reserved.

关键词： Ferroelectricity

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A physically unclonable function with BER < 0.35% for secure chip authentication using write speed variation of RRAM 48

A physically unclonable function with BER < 0.35% for secure...

引用

48th European Solid-state Device Research Conference, ESSDERC 2018

作者： Yang, Jianguo Li, Xing Wang, Tao Xue, Xiaoyong Hong, Zhiliang Wang, Yuanyuan Zhang, David Wei Lu, Hongliang ASIC and System State Key Laboratory School of Microelectronics Fudan University Shanghai200433 China

ISBN: (纸本)9781538654019

We propose a reliable design of physically unclonable function (PUF) utilizing the write speed variation of RRAM for the first time. The demonstration is carried out on a 256Kb test macro of HfO2/WOx bi-layer RRAM which was fabricated based on 0.13 μm logic process. The proposed RRAM PUF is capable of regenerating more than 1015 times after 10 years at 125°C. The bit error rate (BER) remains © 2018 IEEE.

关键词： RRAM

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Acoustic radiation force on small spheres due to transient acoustic fields

arXiv

引用

arXiv 2020年

作者： Riaud, Antoine Wang, Qing Gong, Zhixiong Baudoin, Michael Zhou, Jia State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China Univ. Lille CNRS Centrale Lille Univ. Polytechnique Hauts-de-France UMR 8520 IEMN LilleF-59000 France

Acoustic radiation force is a net force experienced by an object under the action of an acoustic wave. Most theoretical models require the acoustic wave to be periodic, if not purely monofrequency, and are therefore irrelevant for the study of acoustic radiation force due to acoustic pulses. Here, we introduce the concept of finite-duration pulses, which is the most general condition to derive the acoustic radiation force. In the case of small spheres, we extend the Gor’kov to formula to unsteady acoustic fields such as traveling pulses and interfering wave packets. In the latter case, our study suggests that the concept of acoustic contrast is also relevant to express the acoustic radiation force. For negative acoustic contrast particles, the acoustic trapping region narrows with shorter pulses, whereas positive contrast particles (such as biological cells) can fall in secondary traps when the pulse width deviates from an optimal value. This theoretical insight may help to improve the selectivity of pulsed acoustic tweezers. Copyright © 2020, The Authors. All rights reserved.

关键词： Acoustic fields

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A 2.0-2.9 GHz Digital Ring-Based Injection-Locked Clock Multiplier Using a Self-Alignment Frequency Tracking Loop for Reference Spur Reduction

A 2.0-2.9 GHz Digital Ring-Based Injection-Locked Clock Mult...

引用

IEEE Symposium on Radio Frequency Integrated Circuits (RFIC)

作者： Rongjin Xu Dawei Ye Liangjian Lyu C.-J. Richard Shi State Key Laboratory of ASIC and System Fudan University China Institute of Brain-inspired Circuits and Systems (iBiCAS) Fudan University China Department of Electrical and Computer Engineering University of Washington Seattle USA

ISBN: (数字)9781728168098

ISBN: (纸本)9781728168104

This paper presents a 2.0-2.9 GHz digital ring-based injection-locked clock multiplier (ILCM) in a 65 nm CMOS process. A self-alignment frequency tracking loop (SA-FTL) with background delay calibration is proposed to improve the accuracy of injection timing. Since the frequency mismatch of the free-running oscillator and the target frequency is minimized without delay error, the reference spur is reduced to -55.6 dBc, exhibiting 15.9 dB improvement comparing to the case that the SA-FTL is off. The proposed ILCM achieves 545 fs RMS jitter at 2.5 GHz output frequency with a power consumption of 3.1 mW, achieving the FoM of 240.3 dB.

关键词： Delays Clocks Oscillators Jitter Calibration Tracking loops

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Anti-lotus leaf effect: smearing millions of picoliter droplets on bio-inspired artificial lotus leaf

Anti-lotus leaf effect: smearing millions of picoliter dropl...

引用

IEEE Conference on Nanotechnology

作者： Lin Du Yongheng Wei Antoine Riaud Jia Zhou ASIC and System State Key Lab School of Microelectronics Fudan University China State Key Laboratory of Genetic Engineering Fudan University China

Compartmentalization of aqueous samples into micro-droplets enables to study single cells or detect single molecules by performing large number of independent experiments. However, as the droplet size becomes smaller, the surface energy becomes larger so that micro-channels or surface treatments are required to break droplets below the picoliter range, resulting in an increased experimental or chemical complexity. Herein, we study the spontaneous liquid film breakup observed after smearing a mother droplet on the surface of lotus leave reversal. As the film breaks and recedes, it is mechanically trapped in single wells formed by the natural bulges on the leaf and forms picoliter droplets, which we called anti-lotus effect droplet. The bio-inspired effect has the advantage of resisting capillary forces and releasing surface tension in the three-phase interface. Using soft-lithography and spin-coating, we obtain the bio-mimetic wells array with the corrugated surface analogous with the lotus leave, which enables a deeper liquid penetration during the smearing step that results in a more efficient filling of the wells. In the present experiments, we have obtained a regular array of 2 pL droplets with a density of 62,500 droplets/cm 2 , which equivalents to 5.4 million droplets on the surface a 96 well plate. This bio-inspired method of forming droplet will be a convenient way to operate with no chemical treatment and seal. It undoubtedly decreases the complexity of chip manufacturing and potential interference by chemical treatments. We believe that such a method contributes to the development of the efficient micro-droplet generator with a pure physical interface and thus is applicable to biological and medical analysis.

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A 2.46GHz, -88dBm sensitivity CMOS passive mixer-first nonlinear receiver with >50dB tolerance to in-band interferer

A 2.46GHz, -88dBm sensitivity CMOS passive mixer-first nonli...

引用

2019 IEEE International Symposium on Circuits and systems, ISCAS 2019

作者： Ye, Dawei Xu, Rongjin Lyu, Liangjian Richard Shi, C.-J. State Key Laboratory of ASIC and System Fudan University Shanghai201203 China Fudan University Shanghai201203 China Department of Electrical and Computer Engineering University of Washington Seattle98195 United States

ISBN: (纸本)9781728103976

This paper presents a -88 dBm sensitivity, 150Kbp/s OOK mixer-first nonlinear receiver in 65nm CMOS operating at the 2.46GHz ISM band. Since the LNA in the 1st IF band can be saturated by the strong in-band interferer, the shifted limiter (SL) is used to improve the interference resilience. Hence, by using an input power detection block, the 1st gain stage in the 1st IF band can alternatively turn on the LNA or the SL to improve the dynamic range. The in-band SIR at +/-1, 3 and 5MHz are measured to be -43/-11, -53/-54 and -53/-56dB respectively, while just consumes 380 to 610μW. © 2019 IEEE

关键词： Low noise amplifiers

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Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC

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Chinese Physics B 2019年第10期28卷 115-120页

作者： Yanxu Chen Dongliang Xu Kaikai Xu Ning Zhang Siyang Liu Jianming Zhao Qian Luo State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China National ASIC System Engineering Research Center Southeast UniversityNanjing 210096China Department of Electrical Engineering University of South AfricaPretoria 0001South Africa Faculty of Electrical and Computer Engineering State University of Campinas-UNICAMPCampinas CEP 13083-852Brazil

Si p^+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.

关键词： silicon light-emitting diode reverse bias electro-optic modulation

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