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2017 IEEE 12th International Conference on asic

作者： Hui Shen Huiwen Yuan Sitong Bu Mingyue He Daming Huang State Key Laboratory of ASIC and System School of MicroelectronicsFudan University

ISBN: (纸本)9781509066261;9781509066254

Transition metal dichalcogenide（TMDC） has recently attracted great attention for microelectronics and other *** this paper,we present the low frequency noise spectra in one of the typical TMDC,i.e.,the WSe channel p-type MOSFET with back-gated AlO *** observed that the noise power spectra all show 1/fa characteristic with a near *** analysis on the spectra in linear and saturation regions as a function of drain current demonstrates that the carrier number fluctuation is the dominant mechanism responsible to the *** correlated mobility fluctuation has a minor contribution in order to quantitatively account for the experimental *** also observed a correlated asymmetric effect of source and drain in both IV and noise spectra,showing that the Schottky contact may have contribution to the *** presentation provides new evidence that the noise spectra are a very powerful tool in the characterization of emerging semiconductor MOSFETs.

关键词： MOSFET Low Frequency Noise Characteristics in p-Type MOSFET with Multilayer WSe2 Channel and Al2O3 Back Gate Dielectric

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Graphite Planar Resistive Switching Memory and its application in pattern recognition 12

Graphite Planar Resistive Switching Memory and its applicati...

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2017 IEEE 12th International Conference on asic

作者： Lin-Jie Yu Tian-Yu Wang Lin Chen Hao Zhu Qing-Qing Sun Shi-Jin Ding Peng Zhou David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan University

ISBN: (纸本)9781509066261;9781509066254

Resistive switching memory with a planar graphene nanoribbon structure has shown steady memory *** mechanically exfoliating the graphene sheet over a layer of 300 nm Si O2 substrate,the device was fabricated with one step of electron beam lithography and physical vapor *** device has an on/off ratio over 103,and exhibits multilevel resistive switching characteristics,making it possible to act as a synaptic *** we designed an artificial neuron network(ANN) to recognize images of 6 different letters,and the images were successfully *** result proposes a way to implement neuromorphic computation with carbon electronics.

关键词： Graphite Planar Resistive Switching Memory and its application in pattern recognition

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Effect of Surface and Interface on the Back-Gated n-MOSFET with Two-Dimensional MoS2 Channel Grown by Chemical Vapor Deposition

Effect of Surface and Interface on the Back-Gated n-MOSFET w...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Fuyu Bai Hui Shen Daming Huang State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China

Two-dimensional semiconductor channel MOSFETs are often suffering from the extrinsic effects such as the traps in surface and interfaces. These traps may lead to the instability of the device characteristics. To find the location of the dominant traps is a difficult but important task. In this paper, we present the current-voltage, current-time, and low frequency noise characteristics of the back-gated n-MOSFET with MoS 2 channel grown by chemical vapor deposition. The experimental results measured under vacuum condition and at different temperatures make us possible to trace the location of the dominant traps leading to the device instability. The results show that, in addition to the surface effect observed in the ambient environment, both the channel/gate-oxide interface and the metal contacts have important effect on the electric characteristic under vacuum condition, with the source contact being dominant for the device investigated.

关键词： Temperature measurement Molybdenum Sulfur Current measurement MOSFET Temperature Surface treatment

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Devices and applications of van der Waals heterostructures

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Journal of Semiconductors 2017年第3期38卷 44-52页

作者： Chao Li Peng Zhou David Wei Zhang State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

Van der Waals heterostructures,composed of individual two-dimensional material have been developing extremely *** of van der Waals heterostructures without the constraint of lattice matching and processing compatibility provides an ideal platform for fundamental research and new device *** review the approach of synthesis of van der Waals heterostructures,discuss the property of heterostructures and thoroughly illustrate the functional van der Waals heterostructures used in novel electronic and photoelectronic device.

关键词： van der Waals heterostructure two-dimensional material electronic and photoelectronic device

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A 0.07-ppm/Step Differential Digitally Controlled Crystal Oscillator With Guaranteed Monotonicity 12

A 0.07-ppm/Step Differential Digitally Controlled Crystal Os...

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2017 IEEE 12th International Conference on asic

作者： Xiaodong Liu Chenyang Kong Yifan Gao Zhangwen Tang ASIC&System State Key Laboratory School of MicroelectronicsFudan University

ISBN: (纸本)9781509066261;9781509066254

This paper presents a differential digitally controlled crystal oscillator with differential 26 MHz sine wave *** DCXO achieves a phase noise of-138 d Bc/Hz at 1 k Hz offset and-152 d Bc/Hz at 10 k Hz *** it has a ±32 ppm fine tuning range with 0.07 ppm tuning step,which satisfy the GSM,WLAN and WCDMA *** circuit is implemented by differential architecture with a cheap off-chip *** overall power consumption is 3.7 m A with 1.6 V power supply.

关键词： GSM WCDMA A 0.07-ppm/Step Differential Digitally Controlled Crystal Oscillator With Guaranteed Monotonicity

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Droplet Morphology Correction in Single-planar EWOD Devices to Enhance Luminescence Detection Sensitivity

Droplet Morphology Correction in Single-planar EWOD Devices ...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Wei Wang Kaidi Zhang Xubo Wang Jia Zhou ASIC and System State Key Lab Department of Microelectronics Fudan University Shanghai China

Gravity-induced sagging leads to increased distortion in the droplet profile near the solid-liquid free surface and the progressive failure of simple geometric approximations especially for large contact angle or droplet volume conditions. This morphology distortion could induce unintended optical noise and focus shift to the optical detection (e.g. luminescence detection) where droplets behave as micro-lenses. Here, we demonstrate a simple approach to calculate the Young-Laplace equation for the morphology of sessile droplets on EWOD surfaces with variable volumes. The results could be utilized in the future as an effective guide for calibrating the position of photodiodes and improving the sensitivity in optical detection process.

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High-performance logic and memory devices based on a dual-gated MoS2 architecture

arXiv

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arXiv 2019年

作者： Liao, Fuyou Guo, Zhongxun Wang, Yin Xie, Yufeng Zhang, Simeng Sheng, Yaochen Tang, Hongwei Xu, Zihan Riaud, Antoine Zhou, Peng Wan, Jing Fuhrer, Michael S. Jiang, Xiangwei Zhang, David Wei Chai, Yang Bao, Wenzhong State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China Department of Applied Physics Hong Kong Polytechnic University Hong Kong State Key Laboratory of ASIC and System School of Information Science and Engineering Fudan University Shanghai200433 China ARC Centre of Excellence in Future Low-Energy Electronics Monash University VIC3800 Australia School of Physics and Astronomy Monash University VIC3800 Australia Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China Six Carbon Tech. Shenzhen Shenzhen518106 China

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 μA/μm for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structure not only improves electrostatic control but also provides an extra degree of freedom for manipulating the threshold voltage (VTH) and SS by separately tuning the top and back gate voltages, which are demonstrated in a logic inverter. Dynamic random access memory (DRAM) has a short retention time because of large OFF-state current in the Si MOSFET. Based on our DG MoS2-FETs, and a DRAM unit cell with a long retention time of 1260 ms are realized. A large-scale isolated MoS2 DG-FETs based on CVD-synthesized continuous films is also demonstrated, which shows potential applications for future wafer-scale digital and low-power electronics. Copyright © 2019, The Authors. All rights reserved.

关键词： Degrees of freedom (mechanics)

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Publisher Correction: Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing

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Nature materials 2023年第11期22卷 1430页

作者： Guangjian Wu Xumeng Zhang Guangdi Feng Jingli Wang Keji Zhou Jinhua Zeng Danian Dong Fangduo Zhu Chenkai Yang Xiaoming Zhao Danni Gong Mengru Zhang Bobo Tian Chungang Duan Qi Liu Jianlu Wang Junhao Chu Ming Liu State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China. Shanghai Qi Zhi Institute Xuhui District Shanghai China. Zhangjiang Fudan International Innovation Center Fudan University Shanghai China. Key Laboratory of Polar Materials and Devices (MOE) Ministry of Education Shanghai Center of Brain-inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai China. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai China. Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China. Key Laboratory of Polar Materials and Devices (MOE) Ministry of Education Shanghai Center of Brain-inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai China. bbtian@***. State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China. qi_liu@***. Shanghai Qi Zhi Institute Xuhui District Shanghai China. qi_liu@***. Zhangjiang Fudan International Innovation Center Fudan University Shanghai China. qi_liu@***. State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China. jianluwang@***. Shanghai Qi Zhi Institute Xuhui District Shanghai China. jianluwang@***. Zhangjiang Fudan International Innovation Center Fudan University Shanghai China. jianluwang@***. Institute of Optoelectronics Shanghai Frontier Base of Intelligent Optoelectronics and Perception Fudan University Shanghai China. jianluwang@***. Institute of Optoelectronics Shanghai Frontier Base of Intelligent Optoelectronics and Perception Fudan University Shanghai China.

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Analysis of Thermal Treatment Influence on Graphene Oxide Thin Film Deposited by Modified Coating Process

Analysis of Thermal Treatment Influence on Graphene Oxide Th...

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IEEE Conference on Nanotechnology

作者： Xiaoxu Kang Xiaozhi Kang Ruoxi Shen Xiaolan Zhong Ming Li Shoumian Chen Yuhang Zhao Shanshan Liu Limin Zhu Hanwei Lu Bo Zhang Process Technology Department Shanghai IC R&D Center Shanghai China State Key Laboratory of ASIC and System Fudan University Shanghai China PIE Department III Shanghai Huahong Grace Semiconductor Manufacturing Corporation Shanghai China

Graphene Oxide (GO) is made up of single or several closely-spaced graphene sheets with plenty of functional group, and can be considered as insulator. Recently GO material is attracting more and more interest for gas sensor application because of its excellent properties. In this work, GO dispersion was prepared by dispersing high-purity GO nanosheets into water. Isopropyl alcohol (IPA) and related solvent were used to adjust its viscosity and surface tension. Modified coating process was developed to get a more uniform GO thin film. After GO film deposition, it was then annealed to remove the residue solvent and make the film stable. Thickness uniformity was checked by Cross-Sectional SEM. For 2 inch wafer sample, 1 sigma of within wafer GO film uniformity can reach to less than 3 percent by modified coating process. XRD was used to check influence of different annealing condition on GO film. As shown in XRD data, 2Theta value of XRD peak angle was increasing with increasing temperature and time. According to Bragg's law, 2theta value is inversely proportional to lattice distance, and increasing of 2theta value means decreasing of GO film layer distance, which may indicate the decomposition and loss of oxygen-contained functional group.

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Infrared Photodetectors: Extrinsic Photoconduction Induced Short-Wavelength Infrared Photodetectors Based on Ge-Based Chalcogenides (Small 4/2021)

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Small 2021年第4期17卷

作者： Ting He Zhen Wang Ruyue Cao Qing Li Meng Peng Runzhang Xie Yan Huang Yang Wang Jiafu Ye Peisong Wu Fang Zhong Tengfei Xu Hailu Wang Zhuangzhuang Cui Qinghua Zhang Lin Gu Hui-Xiong Deng He Zhu Chongxin Shan Zhongming Wei Weida Hu State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yutian Road Shanghai 200083 China School of Electronic Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing 100049 China State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou 310024 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and Engineering Zhengzhou University Zhengzhou 450001 China

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