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arXiv 2019年

作者： Liao, Fuyou Guo, Zhongxun Wang, Yin Xie, Yufeng Zhang, Simeng Sheng, Yaochen Tang, Hongwei Xu, Zihan Riaud, Antoine Zhou, Peng Wan, Jing Fuhrer, Michael S. Jiang, Xiangwei Zhang, David Wei Chai, Yang Bao, Wenzhong State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China Department of Applied Physics Hong Kong Polytechnic University Hong Kong State Key Laboratory of ASIC and System School of Information Science and Engineering Fudan University Shanghai200433 China ARC Centre of Excellence in Future Low-Energy Electronics Monash University VIC3800 Australia School of Physics and Astronomy Monash University VIC3800 Australia Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China Six Carbon Tech. Shenzhen Shenzhen518106 China

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 μA/μm for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structure not only improves electrostatic control but also provides an extra degree of freedom for manipulating the threshold voltage (VTH) and SS by separately tuning the top and back gate voltages, which are demonstrated in a logic inverter. Dynamic random access memory (DRAM) has a short retention time because of large OFF-state current in the Si MOSFET. Based on our DG MoS2-FETs, and a DRAM unit cell with a long retention time of 1260 ms are realized. A large-scale isolated MoS2 DG-FETs based on CVD-synthesized continuous films is also demonstrated, which shows potential applications for future wafer-scale digital and low-power electronics. Copyright © 2019, The Authors. All rights reserved.

关键词： Degrees of freedom (mechanics)

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Publisher Correction: Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing

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Nature materials 2023年第11期22卷 1430页

作者： Guangjian Wu Xumeng Zhang Guangdi Feng Jingli Wang Keji Zhou Jinhua Zeng Danian Dong Fangduo Zhu Chenkai Yang Xiaoming Zhao Danni Gong Mengru Zhang Bobo Tian Chungang Duan Qi Liu Jianlu Wang Junhao Chu Ming Liu State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China. Shanghai Qi Zhi Institute Xuhui District Shanghai China. Zhangjiang Fudan International Innovation Center Fudan University Shanghai China. Key Laboratory of Polar Materials and Devices (MOE) Ministry of Education Shanghai Center of Brain-inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai China. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai China. Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China. Key Laboratory of Polar Materials and Devices (MOE) Ministry of Education Shanghai Center of Brain-inspired Intelligent Materials and Devices Department of Electronics East China Normal University Shanghai China. bbtian@***. State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China. qi_liu@***. Shanghai Qi Zhi Institute Xuhui District Shanghai China. qi_liu@***. Zhangjiang Fudan International Innovation Center Fudan University Shanghai China. qi_liu@***. State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China. jianluwang@***. Shanghai Qi Zhi Institute Xuhui District Shanghai China. jianluwang@***. Zhangjiang Fudan International Innovation Center Fudan University Shanghai China. jianluwang@***. Institute of Optoelectronics Shanghai Frontier Base of Intelligent Optoelectronics and Perception Fudan University Shanghai China. jianluwang@***. Institute of Optoelectronics Shanghai Frontier Base of Intelligent Optoelectronics and Perception Fudan University Shanghai China.

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Analysis of Thermal Treatment Influence on Graphene Oxide Thin Film Deposited by Modified Coating Process

Analysis of Thermal Treatment Influence on Graphene Oxide Th...

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IEEE Conference on Nanotechnology

作者： Xiaoxu Kang Xiaozhi Kang Ruoxi Shen Xiaolan Zhong Ming Li Shoumian Chen Yuhang Zhao Shanshan Liu Limin Zhu Hanwei Lu Bo Zhang Process Technology Department Shanghai IC R&D Center Shanghai China State Key Laboratory of ASIC and System Fudan University Shanghai China PIE Department III Shanghai Huahong Grace Semiconductor Manufacturing Corporation Shanghai China

Graphene Oxide (GO) is made up of single or several closely-spaced graphene sheets with plenty of functional group, and can be considered as insulator. Recently GO material is attracting more and more interest for gas sensor application because of its excellent properties. In this work, GO dispersion was prepared by dispersing high-purity GO nanosheets into water. Isopropyl alcohol (IPA) and related solvent were used to adjust its viscosity and surface tension. Modified coating process was developed to get a more uniform GO thin film. After GO film deposition, it was then annealed to remove the residue solvent and make the film stable. Thickness uniformity was checked by Cross-Sectional SEM. For 2 inch wafer sample, 1 sigma of within wafer GO film uniformity can reach to less than 3 percent by modified coating process. XRD was used to check influence of different annealing condition on GO film. As shown in XRD data, 2Theta value of XRD peak angle was increasing with increasing temperature and time. According to Bragg's law, 2theta value is inversely proportional to lattice distance, and increasing of 2theta value means decreasing of GO film layer distance, which may indicate the decomposition and loss of oxygen-contained functional group.

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Infrared Photodetectors: Extrinsic Photoconduction Induced Short-Wavelength Infrared Photodetectors Based on Ge-Based Chalcogenides (Small 4/2021)

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Small 2021年第4期17卷

作者： Ting He Zhen Wang Ruyue Cao Qing Li Meng Peng Runzhang Xie Yan Huang Yang Wang Jiafu Ye Peisong Wu Fang Zhong Tengfei Xu Hailu Wang Zhuangzhuang Cui Qinghua Zhang Lin Gu Hui-Xiong Deng He Zhu Chongxin Shan Zhongming Wei Weida Hu State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yutian Road Shanghai 200083 China School of Electronic Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing 100049 China State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou 310024 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and Engineering Zhengzhou University Zhengzhou 450001 China

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Two-carrier transport in SrMnBi2 thin films

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Frontiers of physics 2017年第3期12卷 61-72页

作者： Xiao Yan Cheng Zhang Shan-Shan Liu Yan-Wen Liu David Wei Zhang Fa-Xian Xiu Peng Zhou State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China State Key Laboratory of Surface Physics and Department of Physics Fudan University Shanghai 200433 China Collaborative Innovation Center of Advanced Microstructures Nanjing 210093 China

Monocrystalline SrMnBi2 thin films were grown by molecular beam epitaxy （MBE）, and their transport properties were investigated. A high and unsaturated linear magnetoresistance （MR） was observed, which exhibited a transition from a semi-classical weak-field B2 dependence to a high-field linear dependence. An unusual nonlinear Hall resistance was also observed because of the anisotropic Dirac fermions. The two-carrier model was adopted to analyze the unusual Hall resistance quantitatively. The fitting results yielded carrier densities and mobilities of 3.75×10^14 cm^-2 and 850 cm^2·V^-1·s^-1, respectively, for holes, and 1.468×10^13 cm^-2, 4118 cm^2·V^-1·s^-1, respectively, for electrons, with a hole-dominant conduction at 2.5 K. Hence, an effective mobility can be achieved, which is in reasonable agreement with the effective hole mobility of 1800 cm^2·V^-1·s^-1, extracted from the MR. Further, the angle-dependent MR, proportional to cos 0, where 0 is the angle between the external magnetic field and the perpendicular orientation of the sample plane, also implies a high anisotropy of the Fermi surface. Our results about SrMnBi2 thin films, as one of a new class of AEMnBi2 and AEMnSb2 （AE = Ca, Sr, Ba, Yb, Eu） materials, suggest that they have a lot of exotic transport properties to be investigated, and that their high mobility might facilitate electronic device applications.

关键词： SrMnBi2 thin films magnetoresistance two carriers anisotropic Dirac fermions

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A Low-Noise 56Gbps PAM-4 Linear Optical Receiver in 40nm CMOS

A Low-Noise 56Gbps PAM-4 Linear Optical Receiver in 40nm CMO...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Ting-Yu Yao Dan Li Yang Xie Patrick Yin Chiang Zhi-Liang Hong State Key Laboratory of ASIC & System Fudan University Shanghai China School of Microelectronics Xi’an Jiaotong University Xi’an China

A 56Gb/s PAM-4 low-noise linear optical receiver is presented. To reduce the input referred noise (IRN) and improve the sensitivity, the optical receiver front-end comprises of a high-gain narrow-bandwidth transimpedance amplifier (TIA) followed by a two-stage equalizer. The gain tunable TIA and the variable gain amplifier (VGA) with automatic gain control (AGC) loop ensure the linearity across the whole input range. Designed and implemented in 40nm CMOS technology, the receiver accomplishes 1.7μArms IRN, 78dBΩ transimpedance gain and 23GHz bandwidth while consuming 108mW from 1.6V supply. The dynamic range of transimpedance is 40dB, enabling large input overload current of 2.5mA pp and total harmonica distortion (THD) is below 3% with 800mV pp swing at the output.

关键词： Optical receivers Gain control Bandwidth Linearity Gain CMOS technology

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The Research of Interconnection Network on CoarseGrained Reconfigurable Cipher Logic Array 2

The Research of Interconnection Network on CoarseGrained Rec...

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2017 IEEE 第2届先进信息技术,电子与自动化控制国际会议(IAEAC 2017)

作者： Yuanming Li Yinjian Yan Wei Li Min Liu Department of Microelectronics Institution of Information Science and Technology State Key Lab of ASIC and System Fudan University

Coarse-grained reconfigurable array( CGRA) has an advantage in the implementation of symmetric cryptog raphic algorithms with high performance and flexibility. S pecially, interconnection network is u

ISBN: (纸本)9781467389808

关键词： Multiprocessor interconnection Algorithm design and analysis Ciphers Delays Clustering algorithms Noise measurement

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ForgeEDA: A Comprehensive Multimodal Dataset for Advancing EDA

arXiv

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arXiv 2025年

作者： Shi, Zhengyuan Li, Zeju Ma, Chengyu Zhou, Yunhao Zheng, Ziyang Liu, Jiawei Pan, Hongyang Zhou, Lingfeng Li, Kezhi Zhu, Jiaying Yan, Lingwei He, Zhiqiang Xue, Chenhao Jiang, Wentao Yang, Fan Sun, Guangyu Yang, Xiaoyan Chen, Gang Shi, Chuan Chu, Zhufei Yang, Jun Xu, Qiang Department of Computer Science and Engineering The Chinese University of Hong Kong Sha Tin Hong Kong Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo China School of Computer Science Beijing University of Posts and Telecommunications Beijing China School of Microelectronics State Key Laboratory of Integrated Chips and System Fudan University Shanghai China School of Electronic and Information Engineering Hangzhou Dianzi University Hangzhou China College of Computer Science and Technology Nanjing University of Aeronautics and Astronautics Nanjing China School of Integrated Circuits Peking University Beijing China School of Intergrated Circuits Southeast University Nanjing China National Center of Technology Innovation for EDA Nanjing China

We introduce ForgeEDA, an open-source comprehensive circuit dataset across various categories. ForgeEDA includes diverse circuit representations such as Register Transfer Level (RTL) code, Post-mapping (PM) netlists, And-Inverter Graphs (AIGs), and placed netlists, enabling comprehensive analysis and development. We demonstrate ForgeEDA’s utility by benchmarking state-of-the-art EDA algorithms on critical tasks such as Power, Performance, and Area (PPA) optimization, highlighting its ability to expose performance gaps and drive advancements. Additionally, ForgeEDA’s scale and diversity facilitate the training of AI models for EDA tasks, demonstrating its potential to improve model performance and generalization. By addressing limitations in existing datasets, ForgeEDA aims to catalyze breakthroughs in modern IC design and support the next generation of innovations in EDA. © 2025, CC BY.

关键词： Open source software

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Thermal Stress and Reliability Analysis of TSV-Based 3-D ICs With a Novel Adaptive Strategy Finite Element Method

Thermal Stress and Reliability Analysis of TSV-Based 3-D ICs...

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作者： Zhou, Hao Zhu, Hengliang Cui, Tao Pan, David Z. Zhou, Dian Zeng, Xuan State Key Laboratory of ASIC and Systems Department of Microelectronics Fudan University Shanghai200433 China State Key Laboratory of Scientific and Engineering Computing National Center for Mathematics and Interdisciplinary Sciences Institute of Computational Mathematics Academy of Mathematics and System Sciences Chinese Academy of Sciences Beijing100190 China Department of Electrical and Computer Engineering University of Texas at Austin AustinTX78712 United States Department of Electrical Engineering University of Texas at Dallas RichardsonTX75080 United States

Thermomechanical stress is one of the most important issues in performance and reliability analysis of through silicon via-based 3-D integrated circuits (3-D ICs), where an accurate numerical approach is generally needed to produce stress models and identify weak points in the structure. In this paper, we propose a knowledge-oriented nonuniform (KONU) refinement strategy for 3-D IC stress simulation under the framework of a parallel adaptive finite element method (FEM), and apply it in 3-D IC stress and reliability analysis. Parallel adaptive FEM is promising for solving large-scale problems due to its high accuracy and parallel efficiency. It produces refined meshes based on the a posteriori error analysis, which has the quasi-optimal convergence rate for solving the problem. It has high parallel efficiency, which makes it suitable for handling large and complex structures in 3-D ICs. The KONU refinement strategy developed in this paper can efficiently reduce the number of refinement iterations in parallel adaptive FEM for 3-D IC thermomechanical stress simulation and improves the computational efficiency. It is demonstrated in this paper through several examples that parallel adaptive FEM for thermomechanical stress evaluation can be widely applied in 3-D IC reliability analysis, where accurate stress simulation and modeling is exceptionally important to produce accurate results. © 2018 IEEE.

关键词： Reliability analysis

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Mechanical characterization of cells and microspheres sorted by acoustophoresis with in-line resistive pulse sensing

arXiv

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arXiv 2019年

作者： Riaud, Antoine Thai, Anh L.P. Wang, Wei Taly, Valerie ASIC and System State Key Laboratory School of Microelectronics Fudan University Shanghai200433 China INSERM UMR-S1147 CNRS SNC5014 Paris Descartes University Equipe labellisée Ligue Nationale contre le cancer Paris France Physics of Living Matter Group Department of Physics and Materials Sciences University of Luxembourg

Resistive Pulse Sensing (RPS) is a key label-free technology to measure particles and single-cell size distribution. As a growing corpus of evidence supports that cancer cells exhibit distinct mechanical phenotypes from healthy cells, expanding the method from size to mechanical sensing could represent a pertinent and innovative tool for cancer research. In this paper, we infer the cells compressibility by using acoustic radiation pressure to deflect flowing cells in a microchannel, and use RPS to sense the subpopulations of cells and particles at each acoustic power level. We develop and validate a linear model to analyze experimental data from a large number of particles. This high-precision linear model is complemented by a more robust (yet less detailed) statistical model to analyze datasets with fewer particles. Compared to current acoustic cell phenotyping apparatus based on video cameras, the proposed approach is not limited by the optical diffraction, frame rate, data storage or processing speed, and may ultimately constitute a step forward towards point-of-care acoustoelectrical phenotyping and acoustic phenotyping of nanoscale objects such as exosomes and viruses. Copyright © 2019, The Authors. All rights reserved.

关键词： Cells

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