检索结果-内蒙古大学图书馆

Ultrabroad-Spectrum Photodetectors: Multimechanism Synergistic Photodetectors with Ultrabroad Spectrum Response from 375 nm to 10 µm (Adv. Sci. 15/2019)

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Advanced Science 2019年第15期6卷 1970089-1970089页

作者： Xudong Wang Hong Shen Yan Chen Guangjian Wu Peng Wang Hui Xia Tie Lin Peng Zhou Weida Hu Xiangjian Meng Junhao Chu Jianlu Wang State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China University of Chinese Academy of Sciences 19 Yuquan Road Beijing 100049 China Department of Microelectronics State Key Laboratory of ASIC and System Fudan University Shanghai 200433 China

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High Voltage Excitation and Nonlinear Transmission of a 16 MHz AlN-Based Piezoelectric Micro-Machined Ultrasonic Transducer

High Voltage Excitation and Nonlinear Transmission of a 16 M...

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IEEE International Ultrasonics Symposium

作者： Wenjuan Liu Weijiang Xu Jia Zhou Nikolay Smagin Malika Toubai Leming He Xubo Wang Hao Yu Yuandong Gu Jinghui Xu Lynda Chehami Denis Remiens Junyan Ren CNRS Univ. Lille ISEN Valenciennes France State Key Laboratory of ASIC and System Fudan University Shanghai China School of Electrical and Electronic Engineering Nanyang Technological University Singapore Agency for Science Technology and Research (A*STAR) Institute of Microelectronics Singapore

This paper reports the performance of a 16 MHz AlN-based piezoelectric micro-machined ultrasonic transducer (PMUT) under high voltage excitation and determines its limit of power transmission capability. The proposed PMUT array consists of 44×39 elements fabricated on a silicon-on-insulator (SOI) substrate with 1 μm AlN thin film on 5 μm silicon membrane. With all the array elements electrically connected together, the electrical impedance of the PMUT was 11.6-j30 Ohm at 15.8 MHz resonant frequency in air and 4.72-j25 Ohm at 13.9 MHz when the device was water charged. The LDV (Laser Doppler Vibrometer) measurements showed that the transmission efficiency and the bandwidth for free vibration were 1.7 nm/V and 2.1%, respectively. The resonance modes were specifically associated with the substrate and the cavity structure but they are 10～15 dB less in amplitude than the fundamental resonance of the array. Nonlinear behavior was observed when increasing the burst amplitude and the PMUT array broke down when the input mean power applied on the single element exceeded 5.2 mW. This strategy is potentially applied to CMOS-compatible high-resolution ultrasonography.

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Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride

arXiv

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arXiv 2020年

作者： Wang, Hui Shan Chen, Lingxiu Elibol, Kenan He, Li Wang, Haomin Chen, Chen Jiang, Chengxin Li, Chen Wu, Tianru Cong, Chun Xiao Pennycook, Timothy J. Argentero, Giacomo Zhang, Daoli Watanabe, Kenji Taniguchi, Takashi Wei, Wenya Yuan, Qinghong Meyer, Jannik C. Xie, Xiaoming State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Faculty of Physics University of Vienna Boltzmanngasse 5 Vienna1090 Austria School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan430074 China School of Physical Science and Technology ShanghaiTech University Shanghai201210 China Shanghai200050 China Department of Lithospheric Research University of Vienna Althanstrasse 14 Vienna1090 Austria State Key Laboratory of ASIC & System School of Information Science and Technology Fudan University Shanghai200433 China National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan State Key Laboratory of Precision Spectroscopy School of Physics and Material Science East China Normal University Shanghai200062 China Centre for Theoretical and Computational Molecular Science Australian Institute for Bioengineering and Nanotechnology University of Queensland BrisbaneQLD4072 Australia School of Chemistry Trinity College Dublin CRANN - Advanced Microscopy Laboratory Unit 27/29 Trinity Enterprise CentrePearse St Dublin 2 Ireland University Antwerpen Groenenborgerlaan 171 Antwerpen2020 Belgium Institute for Applied Physics and Natural and Medical Sciences Institute University of Tübingen Tübingen Germany

The integrated in-plane growth of two dimensional materials (e.g. graphene and hexagonal boron nitride (h-BN)) with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge-specific graphene nanoribbons (GNR) in the lattice of h-BN still remains an enormous challenge for present approaches. Here we developed a two-step growth method and successfully achieved sub-5 nm-wide zigzag and armchair GNRs embedded in h-BN, respectively. Further transport measurements reveal that the sub-7 nm-wide zigzag GNRs exhibit openings of the band gap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap-width relationship. Transistors made of these GNRs with large bandgaps (>0.4 eV) exhibit excellent electronic performance even at room temperature (e.g. conductance on-off ratio more than 105 and carrier mobility more than 1,500 cm2 V−1 s−1). An obvious conductance peak is observed in the transfer curves of 8-10 nm-wide zigzag GNRs while it is absent in most of armchair GNRs of similar width. Magneto-transport experiments show that zigzag GNRs exhibit relatively small magneto-conductance (MC) while armchair GNRs have much higher MC than zigzag GNRs. This integrated lateral growth of edge-specific GNRs in h-BN brings semiconducting building blocks to atomically thin layer, and will provide a promising route to achieve intricate nanoscale electrical circuits on high-quality insulating h-BN substrates. Copyright © 2020, The Authors. All rights reserved.

关键词： Boron nitride

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Effect of Single Oxide Trap on Electrostatic Properties in Tunneling Field Effect Transistor 13

Effect of Single Oxide Trap on Electrostatic Properties in T...

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2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)

作者： Si-Tong Bu Ming-Yue He Daming Huang Ming-Fu Li State Key Laboratory ASIC and System Department of Microelectronics Fudan University

ISBN: (纸本)9781467397209

An analytical model is developed for the fluctuation of the electrostatic potential induced by a single charge in the gate oxide in tunneling field effect transistor(TFET). The model is applied to get the fluctuation of the electric current induced by a single oxide trap in TFET. The results are presented and compared with TCAD simulation.

关键词： Effect of Single Oxide Trap on Electrostatic Properties in Tunneling Field Effect Transistor

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Surface modification by graphene oxide:An efficient strategy to improve the performance of activated carbon based supercapacitors

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Chinese Chemical Letters 2017年第12期28卷 2285-2289页

作者： Weishi Du Yaokang Lv Hongliang Lu Zaihua Chen Dominic S.Wright Cheng Zhang College of Chemical Engineering Zhejiang University of TechnologyHangzhou 310014China Department of Chemistry University of CambridgeCambridge CB21EWUnited Kingdom State Key Laboratory of-ASIC and System Institute of Advanced NanodevicesSchool-of MicroelectronicsFudan UniversityShanghai 200433China Zhejiang Forasen Energy Technology Co. Shuige Industrial EstateLishui 323000China

We demonstrate an efficient and cost-effective strategy to improve electrochemical properties of AC based electrode materials. A series of graphene oxide （GO）-modified activated carbon （AC） composites （GO@ACs） have been prepared as electrode materials for supercapacitors （SCs）. In GO@ACs, AC particles anchored on the surface of GO sheets which were synchronously reduced during charge/discharge process, and formed a 3D-conductive network. Electrochemical analyses revealed that 2.5 wt% GO@AC, which exhibited improved electrical conductivity and high specific capacitance at large current density in organic electrolyte, is a promising electrode material for high-performance SCs. At 6A/g, the specific capacitance of 2.5 wt% GO@AC increased by 249,5% in comparison with that of AC.

关键词： Electrode materials Activated carbon Graphene oxide Supercapacitor

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An input buffer for 12bit 2GS/s ADC

An input buffer for 12bit 2GS/s ADC

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International Conference on asic

作者： Fubiao Cao Yongzhen Chen Zhiyuan Dai Fan Ye Junyan Ren State Key Laboratory of ASIC and System (Fudan University) Shanghai China Department of Microelectronics Fudan University Shanghai China

An input buffer using in 2GS/s 12bit resolution analog-to-digital converter(ADC) is presented in this paper. The input buffer is often used in the ADC application to isolate the input signal. One of the most important design tasks of the input buffer is to suppress the non-linearity introduced by the extracted or absorbed current in the sampling circuits. In this design, a wide-band input buffer is based on the one-stage source follower structure and improved by using extra capacitors and MOS devices to suppress the non-linear current. It is supplied by the LDOs for the extra MOS devices to ensure its linear dynamic range. It consumes 70.1mW power in 2GHz sampling rate and 68.14dB SFDR at 1GHz input frequency in post simulation.

关键词： Capacitors Impedance MOS devices Nonlinear distortion Linearity

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Electronic, optical and transport properties of van der Waals transition-metal dichalcogenides heterostructures: A first-principle study

arXiv

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arXiv 2018年

作者： Xu, Ke Xu, Yuanfeng Zhang, Hao Peng, Bo Shao, Hezhu Ni, Gang Li, Jing Yao, Mingyuan Lu, Hongliang Zhu, Heyuan Soukoulis, Costas M. Fudan University Shanghai200433 China Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo315201 China State Key Laboratory of ASIC and System Institute of Advanced Nanodevices School of Microelectronics Fudan University Shanghai200433 China Department of Physics and Astronomy and Ames Laboratory Iowa State University AmesIA50011 United States FORTH Heraklion Crete71110 Greece

Two-dimensional (2D) transition-metal dichalcogenide (TMD) MX2(M = Mo, W;X= S, Se, Te) possess unique properties and novel applications. In this work, we perform first-principles calculations on the van der Waals (vdW) stacked MX2heterostructures to investigate their electronic, optical and transport properties systematically. We perform the so-called Anderson's rule to classify the heterostructures by providing the scheme of the construction of energy band diagrams for the heterostructure consisting of two semiconductor materials. For most of the MX2heterostructures, the conduction band maximum (CBM) and valence band minimum (VBM) reside in two separate semiconductors, forming type II band structure, thus the electron-holes pairs are spatially separated. We also find strong interlayer coupling at Γ point after forming MX2heterostructures, even leading to the indirect band gap. While the band structure near K point remain as the independent monolayer. The carrier mobilities of MX2heterostructures depend on three decisive factors, elastic modulus, effective mass and deformation potential constant, which are discussed and contrasted with those of monolayer MX2, respectively. Copyright © 2018, The Authors. All rights reserved.

关键词： Heterojunctions

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A proved dither-injection method for memory effect in double sampling pipelined ADC

A proved dither-injection method for memory effect in double...

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International Conference on asic

作者： Fubiao Cao Yongzhen Chen Yuefeng Cao Fan Ye Junyan Ren State Key Laboratory of ASIC and System (Fudan University) Shanghai China Department of Microelectronics Fudan University Shanghai China

Double sampling pipelined ADC is solution for high speed ADC besides TI ADC. However, memory effect is introduced for lack of the reset phase between two sampling. Dither-injection method is a choice for calibrating the memory effect but it has to balance the accuracy of the output with the convergence speed. This paper presents a different transfer curve model to reduce the convergence cycles. This method is realized using a LMS algorithm to calibrate memory effect and incomplete settling error. Test in MATLAB shows a 12bit pipelined ADC can converge in 10 5 cycle and achieve 87.87dBc SFDR and 10.7bit ENOB.

关键词： Capacitors Calibration Convergence Switches MATLAB Simulation Clocks

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Room-temperature continuous-wave operation of organometal halide perovskite lasers

arXiv

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arXiv 2018年

作者： Li, Zhitong Moon, Jiyoung Gharajeh, Abouzar Haroldson, Ross Hawkins, Roberta Hu, Walter Zakhidov, Anvar Gu, Qing Department of Electrical and Computer Engineering Department of Material Science and Engineering Department of Physics University of Texas at Dallas RichardsonTX75080 United States ASIC and System State-key Lab Institute of Microelectronics Fudan University Shanghai200433 China Department of Nanophotonics and Metamaterials ITMO University St. Petersburg Moscow Russia

Solution-processed organic-inorganic lead halide perovskites have recently emerged as promising gain media for tunable semiconductor lasers. However, optically pumped continuous-wave lasing at room temperature - a prerequisite for a laser diode - has not been realized so far. Here, we report lasing action in a surface emitting distributed feedback methylammonium lead iodide (MAPbI3) perovskite laser on silicon substrate, at room temperature under continuous-wave optical pumping. This outstanding performance is achieved because of the ultra-low lasing threshold of 13 W/cm2, which is enabled by thermal nanoimprint lithography that directly patterns perovskite into a high Q cavity with large mode confinement, while at the same time improves perovskite's emission characteristics. Our results represent a major step toward electrically pumped lasing in organic and thin-film materials, as well as the insertion of perovskite lasers into photonic integrated circuits for applications in optical computing, sensing and on-chip quantum information. Copyright © 2018, The Authors. All rights reserved.

关键词： Perovskite

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A Dynamic Carrier-Storage Trench-Gate IGBT with Low Switching Loss 13

A Dynamic Carrier-Storage Trench-Gate IGBT with Low Switchin...

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2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)

作者： Yu An Min-Zhi Lin Xiao-Yong Liu Lin-Qing Zhang Jun Wu Peng-Fei Wang State Key Laboratory of ASIC and System School of Microelectronics Fudan University

ISBN: (纸本)9781467397209

A novel Dynamic Carrier-Storage IGBT(DCS-IGBT) is proposed. With Gate(hereinafter, G) and Control Gate(hereinafter, CG), two independent gates integrated in one trench area, CG can be applied with different bias to modulate the carrier-storage layer dynamically. When the device is on, positive bias on CG can raise the concentration of the carrier storage layer leading an increase of the current. When the device is turning off, negative bias on CG can reduce hole carrier concentration in the drift region so as to decrease the switching energy. Therefore, a dynamic carrier storage layer is created and better trade-off between the saturation voltage and switching loss is achieved.

关键词： DCS A Dynamic Carrier-Storage Trench-Gate IGBT with Low Switching Loss

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