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arXiv 2018年

作者： Xu, Ke Xu, Yuanfeng Zhang, Hao Peng, Bo Shao, Hezhu Ni, Gang Li, Jing Yao, Mingyuan Lu, Hongliang Zhu, Heyuan Soukoulis, Costas M. Fudan University Shanghai200433 China Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo315201 China State Key Laboratory of ASIC and System Institute of Advanced Nanodevices School of Microelectronics Fudan University Shanghai200433 China Department of Physics and Astronomy and Ames Laboratory Iowa State University AmesIA50011 United States FORTH Heraklion Crete71110 Greece

Two-dimensional (2D) transition-metal dichalcogenide (TMD) MX2(M = Mo, W;X= S, Se, Te) possess unique properties and novel applications. In this work, we perform first-principles calculations on the van der Waals (vdW) stacked MX2heterostructures to investigate their electronic, optical and transport properties systematically. We perform the so-called Anderson's rule to classify the heterostructures by providing the scheme of the construction of energy band diagrams for the heterostructure consisting of two semiconductor materials. For most of the MX2heterostructures, the conduction band maximum (CBM) and valence band minimum (VBM) reside in two separate semiconductors, forming type II band structure, thus the electron-holes pairs are spatially separated. We also find strong interlayer coupling at Γ point after forming MX2heterostructures, even leading to the indirect band gap. While the band structure near K point remain as the independent monolayer. The carrier mobilities of MX2heterostructures depend on three decisive factors, elastic modulus, effective mass and deformation potential constant, which are discussed and contrasted with those of monolayer MX2, respectively. Copyright © 2018, The Authors. All rights reserved.

关键词： Heterojunctions

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A proved dither-injection method for memory effect in double sampling pipelined ADC

A proved dither-injection method for memory effect in double...

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International Conference on asic

作者： Fubiao Cao Yongzhen Chen Yuefeng Cao Fan Ye Junyan Ren State Key Laboratory of ASIC and System (Fudan University) Shanghai China Department of Microelectronics Fudan University Shanghai China

Double sampling pipelined ADC is solution for high speed ADC besides TI ADC. However, memory effect is introduced for lack of the reset phase between two sampling. Dither-injection method is a choice for calibrating the memory effect but it has to balance the accuracy of the output with the convergence speed. This paper presents a different transfer curve model to reduce the convergence cycles. This method is realized using a LMS algorithm to calibrate memory effect and incomplete settling error. Test in MATLAB shows a 12bit pipelined ADC can converge in 10 5 cycle and achieve 87.87dBc SFDR and 10.7bit ENOB.

关键词： Capacitors Calibration Convergence Switches MATLAB Simulation Clocks

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Room-temperature continuous-wave operation of organometal halide perovskite lasers

arXiv

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arXiv 2018年

作者： Li, Zhitong Moon, Jiyoung Gharajeh, Abouzar Haroldson, Ross Hawkins, Roberta Hu, Walter Zakhidov, Anvar Gu, Qing Department of Electrical and Computer Engineering Department of Material Science and Engineering Department of Physics University of Texas at Dallas RichardsonTX75080 United States ASIC and System State-key Lab Institute of Microelectronics Fudan University Shanghai200433 China Department of Nanophotonics and Metamaterials ITMO University St. Petersburg Moscow Russia

Solution-processed organic-inorganic lead halide perovskites have recently emerged as promising gain media for tunable semiconductor lasers. However, optically pumped continuous-wave lasing at room temperature - a prerequisite for a laser diode - has not been realized so far. Here, we report lasing action in a surface emitting distributed feedback methylammonium lead iodide (MAPbI3) perovskite laser on silicon substrate, at room temperature under continuous-wave optical pumping. This outstanding performance is achieved because of the ultra-low lasing threshold of 13 W/cm2, which is enabled by thermal nanoimprint lithography that directly patterns perovskite into a high Q cavity with large mode confinement, while at the same time improves perovskite's emission characteristics. Our results represent a major step toward electrically pumped lasing in organic and thin-film materials, as well as the insertion of perovskite lasers into photonic integrated circuits for applications in optical computing, sensing and on-chip quantum information. Copyright © 2018, The Authors. All rights reserved.

关键词： Perovskite

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A Dynamic Carrier-Storage Trench-Gate IGBT with Low Switching Loss 13

A Dynamic Carrier-Storage Trench-Gate IGBT with Low Switchin...

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2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)

作者： Yu An Min-Zhi Lin Xiao-Yong Liu Lin-Qing Zhang Jun Wu Peng-Fei Wang State Key Laboratory of ASIC and System School of Microelectronics Fudan University

ISBN: (纸本)9781467397209

A novel Dynamic Carrier-Storage IGBT(DCS-IGBT) is proposed. With Gate(hereinafter, G) and Control Gate(hereinafter, CG), two independent gates integrated in one trench area, CG can be applied with different bias to modulate the carrier-storage layer dynamically. When the device is on, positive bias on CG can raise the concentration of the carrier storage layer leading an increase of the current. When the device is turning off, negative bias on CG can reduce hole carrier concentration in the drift region so as to decrease the switching energy. Therefore, a dynamic carrier storage layer is created and better trade-off between the saturation voltage and switching loss is achieved.

关键词： DCS A Dynamic Carrier-Storage Trench-Gate IGBT with Low Switching Loss

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Plasma Enhanced Atomic layer deposition of molybdenum oxide from Mo（CO）6 and O2 plasma for 2D Electronic Device Application 13

Plasma Enhanced Atomic layer deposition of molybdenum oxide ...

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2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)

作者： Mao-Lin Shi Jing Xu Ya-Wei Dai Qian Cao Lin Chen Qing-Qing Sun Peng Zhou Shi-Jin Ding David Wei Zhang State Key Laboratory of ASIC and System School of Microelectronics Fudan University

ISBN: (纸本)9781467397209

This work is focused on synthesis of molybdenum oxide（Mo O） by Plasma Enhanced Atomic layer deposition（PEALD） using molybdenum hexacarbonyl(Mo（CO）) is selected as precursor for Mo and O is adopted as precursor for plasma. Ex-situ growth characterizations were carried out by X-ray reflectivity（XRR）, scanning electron microscope（SEM）, X-ray diffraction（XRD） and X-ray photoelectron spectroscopy（XPS）. XRR result indicates the linear growth of the thin films. While amorphous as-deposited film was observed by XRD. XPS and SEM was applied to further analyze the quality of the film. The growth of Mo O3 can be layer controllable and have good film continuity. There merits are helpful in further synthesis of Mo S by sulfurization. keywords: Atomic Layer Deposition, Molybdenum Oxide, Molybdenum disulfide

关键词： cycle and O2 plasma for 2D Electronic Device Application Plasma Enhanced Atomic layer deposition of molybdenum oxide from Mo

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INFLUENCE OF TRENCH OXIDE ON SCHOTTKY BARRIER HEIGHT FOR TISIX/SI POWER DIODE 13

INFLUENCE OF TRENCH OXIDE ON SCHOTTKY BARRIER HEIGHT FOR TIS...

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2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)

作者： Bi-Zan Yang Lin-Lin Wang Yu-Long Jiang State Key Laboratory of ASIC and System School of Microelectronics Fudan University

ISBN: (纸本)9781467397209

The influence of trench oxide on Schottky barrier height（SBH） of Ti Six/Si power diode has been investigated in this paper. It is revealed that 4% larger trench oxide coverage will induce 28 me V lower SBH for Ti Six/Si power diode, which can save % self-power consumption of the diode when the forward current is set to be 20 A. Theoretically, the trench oxide protection structure, which is applied to improve the device reverse characteristics, should not affect the SBH of the diode. However, the diffusion of oxygen atom from the trench oxide into the Ti layer during silicidation process will lead to the formation of Ti Ox, thus inducing the SBH lowering.

关键词： SBH INFLUENCE OF TRENCH OXIDE ON SCHOTTKY BARRIER HEIGHT FOR TISIX/SI POWER DIODE POWER

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Theoretical investigation of novel electronic, optical, mechanical and thermal properties of metallic hydrogen at 495 GPa

arXiv

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arXiv 2018年

作者： Peng, Bo Xu, Ke Zhang, Hao Shao, Hezhu Ni, Gang Li, Jing Wu, Liangcai Lu, Hongliang Jin, Qingyuan Zhu, Heyuan Department of Optical Science and Engineering Fudan University Shanghai200433 China Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo315201 China College of Science Donghua University Shanghai201620 China State Key Laboratory of ASIC and System Institute of Advanced Nanodevices School of Microelectronics Fudan University Shanghai200433 China

Atomic metallic hydrogen has been produced in the laboratory at high pressure and low temperature, prompting further investigations of its different properties. However, purely experimental approaches are infeasible because of the extreme requirements in producing and preserving the metastable phase. Here we perform a systematic investigation of the electronic, optical, mechanical and thermal properties of I41/amd hydrogen at 495 GPa using first-principles calculations. We calculate the electronic structure and dielectric function to verify the metallic behaviour of I41/amd hydrogen. The calculated total plasma frequency from both intraband and interband transitions, 33.40 eV, agrees well with the experimental result. The mechanical properties including elastic stability and sound velocity are also investigated. The mechanical stability of I41/amd hydrogen is limited by shear modulus other than bulk modulus, and the high Young’s modulus indicates that I41/amd hydrogen is a stiff material. After investigating the lattice vibrational properties, we study the thermodynamical properties and lattice anharmonicity to understand thermal behaviours in metallic hydrogen. Finally, the lattice thermal conductivity of I41/amd hydrogen is calculated to be 194.72 W/mK and 172.96 W/mK along the x and z directions, respectively. Using metallic hydrogen as an example, we demonstrate that first-principles calculations can be a game-changing solution to understand a variety of material properties in extreme conditions. Copyright © 2018, The Authors. All rights reserved.

关键词： Temperature

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Photoluminescence of SiO2/SiNx/SiO2/Si Structures with Off-Stoichiometric Silicon Nitride Layers

Photoluminescence of SiO2/SiNx/SiO2/Si Structures with Off-S...

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International Conference on Nanomaterials: Application & Properties (NAP)

作者： I.A. Romanov L.A. Vlasukova I.N. Parkhomenko F.F. Komarov O.V. Milchanin M.A. Makhavikou A.V. Mudryi V.D. Zhivulko N.S. Kovalchuk N.A. Krekoten H.-L. Lu Belarusian State University Minsk Belarus A.N. Sevchenko Institute of Applied Physics Problems Minsk Belarus Scientific and Practical Materials Research Center National Academy of Sciences of Belarus Minsk Belarus Joint Stock Company “Integral” Minsk Belarus State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China

Two triple-layered SiO 2 /SiN x /SiO 2 structures with Si-rich and N-rich silicon nitride active layers were fabricated on p-type Si-substrates by chemical vapour deposition. The different stoichiometry of SiNx layer (x = 0.9 and × = 1.4) was obtained by changing the ratio of the SiH 2 Cl 2 /NH 3 flow rates during deposition of silicon nitride active layer (8/1 and 1/8, respectively). The spectroscopic ellipsometry measurements show the refractive index as well as absorbance could be controlled by × adjusting. As a result, it could tune the emission colour of the deposited structures by changing their chemical composition. The structures with Si-rich and N-rich SiN x active layers emit in the red (1.9 eV) and blue (2.6 eV) spectral ranges, respectively. The PL intensities of the different structures with Si-rich and N-rich SiNx are comparable. Annealing effect on PL intensity is differed for structures with Si-rich and N-rich SiNx. The origin of PL and the effect of annealing treatment have been discussed.

关键词： Films Silicon nitride Annealing Silicon Periodic structures Absorption Photoluminescence

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A yield-enhanced global optimization methodology for analog circuit based on extreme value theory

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Science China(Information Sciences) 2016年第8期59卷 234-249页

作者： Minghua LI Guanming HUANG Xiulong WU Liuxi QIAN Xuan ZENG Dian ZHOU Department of Electrical Engineering The University of Texas at Dallas Synopsys Inc. School of Electronic and Information Engineering Anhui University State Key Laboratory of ASIC & System Department of Microelectronics Fudan University

The challenge in variation-aware circuit optimization with consideration of yield is the trade-off between optimized performance, yield and optimization runtime. This paper presents a practical variationaware circuit global optimization framework named GOYE, which shows the advantages on performance, yield and runtime. It uses an approach called constraint violation elimination(CVE) in global search phase to prune initial starting points and uses the gradient-based method in local search to locate optimum. The worst-case analysis(WCA), which is necessary for variation-aware circuit optimization, is nested in the local optimization process. The efficiency is significantly improved by a novel method based on extreme value theory(EVT). Our EVT-based method is also the first one that allows users to control the target yield such that under-design or over-design can be avoided. A design example in TSMC 65 nm technology is illustrated in the paper where all performance achieves three-sigma yield with consideration of environmental and inter-die/intra-die process variations.

关键词： global optimization yield enhancement analog design automation extreme value analysis(EVA) sequential quadratic programming(SQP) worst-case analysis

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Ultrafast photo-induced phase transition in 2D MoTe2

arXiv

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arXiv 2019年

作者： Peng, Bo Zhang, Hao Chen, Weiwen Qiu, Zhi-Jun Shao, Hezhu Zhu, Heyuan Monserrat, Bartomeu Fu, Desheng Weng, Hongming Department of Optical Science and Engineering Fudan University Shanghai200433 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing100190 China TCM Group Cavendish Laboratory University of Cambridge J. J. Thomson Avenue CambridgeCB3 0HE United Kingdom State Key Laboratory of ASIC & System School of Information Science and Technology Fudan University Shanghai200433 China Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo315201 China Department of Electronics & Materials Sciences Faculty of Engineering & Department of Optoelectronics and Nanostructure Science Graduate School of Science and Technology Shizuoka University Hamamatsu432-8561 Japan

Photo-induced phase transitions (PIPTs) provide an ultrafast, energy-efficient way for precisely manipulating the topological properties of transition-metal ditellurides, and can be used to stabilize a topological phase in an otherwise semiconducting material. By first-principles calculations, we demonstrate that the PIPT in monolayer MoTe2 from the semiconducting 2H to the topological 1T0 phase is driven purely by electronic excitations. The photo-induced electronic excitation changes the electron density, and softens the lattice vibrational modes. These pronounced softenings lead to structural symmetry breaking within sub-picosecond timescales, which is far shorter than the timescale of a thermally driven phase transition. The transition is predicted to be triggered by photons with energies over 1.96 eV, corresponding to an excited carrier density of 3.4 × 1014 cm−2, which enables a controllable phase transformation by varying the laser wavelength. Our results provide insight into the underlying physics of the phase transition in 2D transition-metal ditellurides, and show an ultrafast phase transition mechanism for manipulation of the topological properties of 2D systems. Copyright © 2019, The Authors. All rights reserved.

关键词： Topology

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